Amorphous thin films for solar-cell applications : quarterly report no. 1 for September 11- December 10, 1979 /

"Work Performed Under Contract No. AC02-77CH00178."

Amorphous boron-silicon-hydrogen alloys for thin films heterojunction solar-cell : quarterly technical progress report no. 1 for June 1 - August 31, 1970 /

"Work Performed Under Contract No. AC02-77CH00178."

Thin films of gallium arsenide on low-cost substrates : final technical report for period July 5, 1976-December 5, 1978 /

"Work Performed Under Contract No. AC03-79ET20435."

Current induced switching of superconductive thin films,

"This work was supported in part by the General Research Provision of contract between the Air Force and Space Technology Laboratories, Inc., and in part by the Office of Naval Research."

The diffraction of electrons by thin films.

At head of title: Office of Naval Research. Contract Nonr-401(06), Project no. NR 356-296. Final technical report.

Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10 K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states. (C) 2004 Elsevier B.V. All rights reserved.

Formation of mesostructured titania thin films using iospropoxide precursors

Mesostructured titania thin films were prepared by an evaporation-induced self-assembly process. The highly acidic sot precursors contained titanium(IV) tetraisopropoxide (TTIP) as a titanium source, a tri-block copolymer Pluronic P123 as a template, and acetylacetonate and HCl as hydrolysis inhibitors. Characteristics of the resultant titania thin films were studied using X-ray diffraction (XRD) analysis, N-2-adsorption/desorption analysis, and transmission electron microscopy (TEM). XRD and TEM investigations on the as-synthesised films revealed the appearance of cubic-like, pseudohexagonal, and lamellar mesophases; depending on the amount of water in the sols of film precursors. Template removal by a calcination process yields high surface area (320-360 m(2)/g) mesoporous materials with crystalline anatase frameworks. Water content also influences the degree of anatase crystallinity of the calcined films. Higher water content resulted in improved anatase crystallinity. These nanostructured materials are of interest for photocatalysts, pbotoelectrochemical solar cells and other photonic devices. (C) 2003 Elsevier B.V. All rights reserved.

Assessment of P availability in heavily fertilized soils using the diffusive gradient in thin films (DGT) technique

Phosphorus-availability tests typically provide an indication of quantity of P available (Colwell bicarbonate-extractable P), or of the intensity of supply (0.01 M CaCl2-extractable P). The soil's capacity to buffer P is more difficult to assess, and is generally estimated using a P-adsorption curve. The diffusive gradient in thin films (DGT) approach may provide a simpler means of assessing a soil's ability to maintain soil solution P. Optimal extraction conditions were found to be 24 h exposure of DGT samplers to saturated soil. The DGT approach was evaluated on a range of 24 soils, some of which had high Colwell- (>100 mu g g(-1)) and Bray 1- (>30 mu g g(-1)) extractable P content, but showed a tomato (Lycopersicon esculentum Mill.) yield response to the addition of P fertilizer. The DGT approach provided an excellent separation of soils on which tomato showed a yield response, from those where fertilizer P did not increase dry-matter yield. Phosphorus accumulation was strongly correlated with soil solution P concentration and anion exchange resin-extractable P, but showed poor correlation with Colwell- or Bray 1-extractable P. The DGT P accumulation rate of 3.62 x 10(-7) to 4.79 x 10(-5) mol s(-1) m(-3) for the soils tested was comparable to the uptake rate of roots of tomato plants that were adequately supplied with P (2.25 x 10(-5) mol s(-1) m(-3)).

Scaling laws for the critical rupture thickness or common thin films

Despite decades of experimental and theoretical investigation on thin films, considerable uncertainty exists in the prediction of their critical rupture thickness. According to the spontaneous rupture mechanism, common thin films become unstable when capillary waves. at the interfaces begin to grow. In a horizontal film with symmetry at the midplane. unstable waves from adjacent interfaces grow towards the center of the film. As the film drains and becomes thinner, unstable waves osculate and cause the film to rupture, Uncertainty sterns from a number of sources including the theories used to predict film drainage and corrugation growth dynamics. In the early studies, (lie linear stability of small amplitude waves was investigated in the Context of the quasi-static approximation in which the dynamics of wave growth and film thinning are separated. The zeroth order wave growth equation of Vrij predicts faster wave growth rates than the first order equation derived by Sharma and Ruckenstein. It has been demonstrated in an accompanying paper that film drainage rates and times measured by numerous investigations are bounded by the predictions of the Reynolds equation and the more recent theory of Manev, Tsekov, and Radoev. Solutions to combinations of these equations yield simple scaling laws which should bound the critical rupture thickness of foam and emulsion films, In this paper, critical thickness measurements reported in the literature are compared to predictions from the bounding scaling equations and it is shown that the retarded Hamaker constants derived from approximate Lifshitz theory underestimate the critical thickness of foam and emulsion films, The non-retarded Hamaker constant more adequately bounds the critical thickness measurements over the entire range of film radii reported in the literature. This result reinforces observations made by other independent researchers that interfacial interactions in flexible liquid films are not adequately represented by the retarded Hamaker constant obtained from Lifshitz theory and that the interactions become significant at much greater separations than previously thought. (c) 2005 Elsevier B.V. All rights reserved.

Bounding film drainage in common thin films

A review of thin film drainage models is presented in which the predictions of thinning velocities and drainage times are compared to reported values on foam and emulsion films found in the literature. Free standing films with tangentially immobile interfaces and suppressed electrostatic repulsion are considered, such as those studied in capillary cells. The experimental thinning velocities and drainage times of foams and emulsions are shown to be bounded by predictions from the Reynolds and the theoretical MTsR equations. The semi-empirical MTsR and the surface wave equations were the most consistently accurate with all of the films considered. These results are used in an accompanying paper to develop scaling laws that bound the critical film thickness of foam and emulsion films. (c) 2005 Elsevier B.V. All rights reserved.

Application of edge-to-edge matching model to understand the in-plane texture of TiSi2 (C49) thin films on (001)(Si) surface

The edge-to-edge matching model, which was originally developed for predicting crystallographic features in diffusional phase transformations in solids, has been used to understand the formation of in-plane textures in TiSi2 (C49) thin films on Si single crystal (001)si surface. The model predicts all the four previously reported orientation relationships between C49 and Si substrate based on the actual atom matching across the interface and the basic crystallographic data only. The model has strong potential to be used to develop new thin film materials. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires

We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.

The study of ultra-low energy deposition of hydrogenated amorphous carbon thin films

This thesis is dedicated to the production and analysis of thin hydrogenated amorphous carbon films. A cascaded arc plasma source was used to produce a high density plasma of hydrocarbon radicals that deposited on a substrate at ultra low energies. The work was intended to create a better understanding of the mechanisms responsible for the film formation, by an extensive analysis on the properties of the films in correlation with the conditions used in the plasma cell. Two different precursors were used: methane and acetylene. They revealed a very different picture for the mechanism of film formation and properties. Methane was less successful, and the films formed were soft, with poor adhesion to the substrate and decomposing with time. Acetylene was the better option, and the films formed in this case were harder, with better adhesion to the substrate and stable over time. The plasma parameters could be varied to change the character of films, from polymer-like to diamond-like carbon. Films deposited from methane were grown at low deposition rates, which increased with the increase in process pressure and source power and decreased with the increase in substrate temperature and in hydrogen fraction in the carrier gas. The films had similar hydrogen content, sp3 fractions, average roughness (Ra) and low hardness. Above a deposition temperature of 350°C graphitization occurred - an increase in the sp2 fraction. A deposition mechanism was proposed, based upon the reaction product of the dissociative recombination of CH4+. There were small differences between the chemistries in the plasma at low and high precursor flow rates and low and high substrate temperatures; all experimental conditions led to formation of films that were either polymer-like, soft amorphous hydrogenated carbon or graphitic-like in structure. Films deposited from acetylene were grown at much higher deposition rates on different substrates (silicon, glass and plastics). The film quality increased noticeably with the increase of relative acetylene to argon flow rate, up to a certain value, where saturation occurred. With the increase in substrate temperature and the lowering of the acetylene injection ring position further improvements in film quality were achieved. The deposition process was scaled up to large area (5 x 5 cm) substrates in the later stages of the project. A deposition mechanism was proposed, based upon the reaction products of the dissociative recombination of C2H2 +. There were large differences between the chemistry in the plasma at low and medium/high precursor flow rates. This corresponded to large differences in film properties from low to medium flow rates, when films changed their character from polymer-like to diamond-like, whereas the differences between films deposited at medium and high precursor flow rates were small. Modelling of the film growth on silicon substrates was initiated and it explained the formation of sp2 and sp3 bonds at these very low energies. However, further improvements to the model are needed.

Thermal stability of sputter-deposited 330 austenitic stainless-steel thin films with nanoscale growth twins

We have explored the thermal stability of nanoscale growth twins in sputter-deposited 330 stainless-steel (SS) films by vacuum annealing up to 500 °C. In spite of an average twin spacing of only 4 nm in the as-deposited films, no detectable variation in the twin spacing or orientation of twin interfaces was observed after annealing. An increase in the average columnar grain size was observed after annealing. The hardness of 330 SS films increases after annealing, from 7 GPa for as-deposited films to around 8 GPa for annealed films, while the electrical resistivity decreases slightly after annealing. The changes in mechanical and electrical properties after annealing are interpreted in terms of the corresponding changes in the residual stress and microstructure of the films. © 2005 American Institute of Physics.