981 resultados para Superconducting resonators


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The creation of large magnetic fields is a necessary component in many technologies, ranging from magnetic resonance imaging, electric motors and generators, and magnetic hard disk drives in information storage. This is typically done by inserting a ferromagnetic pole piece with a large magnetisation density MS in a solenoid. In addition to large MS, it is usually required or desired that the ferromagnet is magnetically soft and has a Curie temperature well above the operating temperature of the device. A variety of ferromagnetic materials are currently in use, ranging from FeCo alloys in, for example, hard disk drives, to rare earth metals operating at cryogenic temperatures in superconducting solenoids. These latter can exceed the limit on MS for transition metal alloys given by the Slater-Pauling curve. This article reviews different materials and concepts in use or proposed for technological applications that require a large MS, with an emphasis on nanoscale material systems, such as thin and ultra-thin films. Attention is also paid to other requirements or properties, such as the Curie temperature and magnetic softness. In a final summary, we evaluate the actual applicability of the discussed materials for use as pole tips in electromagnets, in particular, in nanoscale magnetic hard disk drive read-write heads; the technological advancement of the latter has been a very strong driving force in the development of the field of nanomagnetism.

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A range of lanthanum strontium manganates (La1−xSrxMnO3–LSMO) where 0 ≤ x < 0.4 were prepared using a modified peroxide sol–gel synthesis method. The magnetic nanoparticle (MNP) clusters obtained for each of the materials were characterised using scanning electron microscopy (SEM), X-ray powder diffraction (XRD) and infra-red (IR) spectroscopy in order to confirm the crystalline phases, crystallite size and cluster morphology. The magnetic properties of the materials were assessed using the Superconducting quantum interference device (SQUID) to evaluate the magnetic susceptibility, Curie temperature (Tc) and static hysteretic losses. Induction heating experiments also provided an insight into the magnetocaloric effect for each material. The specific absorption rate (SAR) of the materials was evaluated experimentally and via numerical simulations. The magnetic properties and heating data were linked with the crystalline structure to make predictions with respect to the best LSMO composition for mild hyperthermia (41 °C ≤ T ≤ 46 °C). La0.65Sr0.35MnO3, with crystallite diameter of 82.4 nm, (agglomerate size of ∼10 μm), Tc of 89 °C and SAR of 56 W gMn−1 at a concentration 10 mg mL−1 gave the optimal induction heating results (Tmax of 46.7 °C) and was therefore deemed as most suitable for the purposes of mild hyperthermia, vide infra.

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We consider an optomechanical quantum system composed of a single cavity mode interacting with N mechanical resonators. We propose a scheme for generating continuous-variable graph states of arbitrary size and shape, including the so-called cluster states for universal quantum computation. The main feature of this scheme is that, differently from previous approaches, the graph states are hosted in the mechanical degrees of freedom rather than in the radiative ones. Specifically, via a 2N-tone drive, we engineer a linear Hamiltonian which is instrumental to dissipatively drive the system to the desired target state. The robustness of this scheme is assessed against finite interaction times and mechanical noise, confirming it as a valuable approach towards quantum state engineering for continuous-variable computation in a solid-state platform.

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Electrocerâmicos são uma classe de materiais avançados com propriedades eléctricas valiosas para aplicações. Estas propriedades são geralmente muito dependentes da microestrutura dos materiais. Portanto, o objectivo geral deste trabalho é investigar o desenho da resposta dieléctrica de filmes espessos obtidos por Deposição Electroforética (EPD) e cerâmicos monolíticos, através do controlo da evolução da microestrutura durante a sinterização de electrocerâmicos à base de titanatos. Aplicações sem fios na indústria microelectrónica e de comunicações, em rápido crescimento, tornaram-se um importante mercado para os fabricantes de semicondutores. Devido à constante necessidade de miniaturização, redução de custos e maior funcionalidade e integração, a tecnologia de filmes espessos está a tornar-se uma abordagem de processamento de materiais funcionais cada vez mais importante. Uma técnica adequada neste contexto é EPD. Os filmes espessos resultantes necessitam de um passo subsequente de sinterização que é afectada pelo substrato subjacente, tendo este um forte efeito sobre a evolução da microestrutura. Relacionado com a miniaturização e a discriminação do sinal, materiais dieléctricos usados como componentes operando a frequências das microondas em aplicações na industria microelectrónica de comunicações devem apresentar baixas perdas dieléctricas e elevadas permitividade dieléctrica e estabilidade com a temperatura. Materiais do sistema BaO-Ln2O3- TiO2 (BLnT: Ln = La ou Nd), como BaLa4Ti4O15 (BLT) e Ba4.5Nd9Ti18O54 (BNT), cumprem esses requisitos e são interessantes para aplicações, por exemplo, em estações de base para comunicações móveis ou em ressonadores para telefones móveis, onde a miniaturização dos dispositivos é muito importante. Por sua vez, o titanato de estrôncio (SrTiO3, STO) é um ferroeléctrico incipiente com constante dieléctrica elevada e baixas perdas, que encontra aplicação em, por exemplo, condensadores de camada interna, tirando partido de fronteiras de grão altamente resistivas. A dependência da permitividade dieléctrica do campo eléctrico aplicado torna este material muito interessante para aplicações em dispositivos de microondas sintonizáveis. Materiais à base de STO são também interessantes para aplicações termoeléctricas, que podem contribuir para a redução da actual dependência de combustíveis fósseis por meio da geração de energia a partir de calor desaproveitado. No entanto, as mesmas fronteiras de grão resistivas são um obstáculo relativamente à eficiência do STO para aplicações termoeléctricas. Para além do efeito do substrato durante a sinterização constrangida, outros factores, como a presença de fase líquida, a não-estequiometria ou a temperatura de sinterização, afectam significativamente não apenas a microestrutura dos materiais funcionais, mas também a sua resposta dieléctrica. Se adequadamente compreendidos, estes factores podem ser intencionalmente usados para desenhar a microestrutura dos electrocerâmicos e, desta forma, as suas propriedades dieléctricas. O efeito da não-estequiometria (razão Sr/Ti 0.995-1.02) no crescimento de grão e resposta dieléctrica de cerâmicos de STO foi investigado neste trabalho. A mobilidade das fronteiras de grão aumenta com a diminuição da razão Sr/Ti. A resistividade do interior dos grãos e das fronteiras de grão é sistematicamente diminuída em amostras não-estequiométricas de STO, em comparação com o material estequiométrico. O efeito é muito mais forte para as fronteiras de grão do que para o seu interior. Dependências sistemáticas da não-estequiometria foram também observadas relativamente à dependência da condutividade da temperatura (muito mais afectada no caso da contribuição das fronteiras de grão), à capacitância do interior e fronteiras de grão e à espessura das fronteiras de grão. Uma anomalia no crescimento de grão em cerâmicos de STO ricos em Ti foi também observada e sistematicamente analisada. Foram detectadas três descontinuidades na dependência do tipo Arrhenius do crescimento de grão relativamente à temperatura com diminuições no tamanho de grão a temperaturas em torno de 1500, 1550 e 1605 °C. Além disso, descontinuidades semelhantes foram também observadas na dependência da energia de activação relativamente à condutividade das fronteiras de grão e na espessura das fronteiras de grão, avaliadas por Espectroscopia de Impedância. Estas notáveis coincidências suportam fortemente a formação de diferentes complexos de fronteira de grão com transições entre os regimes de crescimento de grão observados, que podem ser correlacionados com diferentes mobilidades de fronteira de grão e propriedades dieléctricas. Um modelo é sugerido, que se baseia na diminuição da fase líquida localizada nas fronteiras de grão, como o aumento da temperatura de sinterização, um cenário compatível com um fenómeno de solubilidade retrógrada, observado anteriormente em metais e semicondutores, mas não em cerâmicos. A EPD de filmes espessos de STO em substratos de folha de Pt e a sinterização constrangida dos filmes fabricados foram também preliminarmente tratadas. Filmes espessos de STO foram depositados com êxito por EPD sobre substratos de Pt e, depois de sinterizados, atingiram densidades elevadas. Um aumento da densificação e do tamanho de grão assim como o alargamento da distribuição de tamanho do grão foram observados com a diminuição da razão Sr/Ti, tal como anteriormente observado em amostras cerâmicas. Grãos equiaxiados foram observados para todas as composições, mas um certo grau de anisotropia na orientação dos poros foi detectado: os poros revelaram uma orientação vertical preferencial. Este trabalho focou-se também na sinterização constrangida do sistema BLnT (Ln = La ou Nd), nomeadamente de filmes espessos de BLT e BNT sobre substratos de folha de platina, e na relação do desenvolvimento de anisotropia microestrutural com as propriedades dieléctricas. As observações durante a sinterização constrangida foram comparadas com cerâmicos monolíticos equivalentes sinterizados livremente. Filmes espessos de BLnT (Ln = La ou Nd) com elevada densidade foram obtidos por EPD e subsequente sinterização constrangida. A anisometria cristalográfica do material em conjunto com um passo de sinterização constrangida resultou em grãos alongados e microestruturas anisotrópicas. O efeito do stress do substrato durante a sinterização constrangida originou graus mais elevados de anisotropia (grãos e poros alongados e orientação preferencial, bem como textura cristalográfica) nos filmes sinterizados relativamente aos cerâmicos equivalentes sinterizados livremente, não obstante o estado equivalente das amostras em verde. A densificação dos filmes de BLnT (Ln = La ou Nd) é retardada em comparação com os cerâmicos, mas depois de longos tempos de sinterização densidades semelhantes são obtidas. No entanto, em oposição a observações na sinterização constrangida de outros sistemas, o crescimento do grão em filmes de BLnT (Ln = La ou Nd) é favorecido pelo constrangimento causado pelo substrato. Além disso, grãos e poros alongados orientados paralelamente ao substrato foram desenvolvidos durante a sinterização constrangida de filmes espessos. Verificou-se uma forte correlação entre a evolução de grãos e poros, que começou assim que o crescimento do grão se iniciou. Um efeito da tensão do substrato no aumento do crescimento de grão, bem como um forte “Zener pinning”, origina microestruturas altamente texturizadas, o que também é observado a nível cristalográfico. Efeitos marcantes da anisotropia microestrutural foram também detectados nas propriedades dieléctricas dos filmes de BLnT (Ln = La ou Nd). Juntamente com o aumento da razão de aspecto dos grãos, do factor de orientação e do grau de textura cristalográfica, a permitividade relativa é ligeiramente diminuída e o coeficiente de temperatura da permitividade evolui de negativo para positivo com o aumento do tempo isotérmico de sinterização. Este trabalho mostra que a não-estequiometria pode ser usada para controlar a mobilidade das fronteiras de grão e, portanto, desenhar a microestrutura e as propriedades dieléctricas de electrocerâmicos à base de STO, com ênfase nas propriedades das fronteiras de grão. O papel da não-estequiometria no STO e dos complexos de fronteira de grão no desenvolvimento microestrutural é discutido e novas oportunidades para desenhar as propriedades de materiais funcionais são abertas. As observações relativamente à sinterização constrangida apontam para o efeito de tensões mecânicas desenvolvidas devido ao substrato subjacente no desenvolvimento da microestrutura de materiais funcionais. É assim esperado que a escolha adequada de substrato permitia desenhar a microestrutura de filmes espessos funcionais com desempenho optimizado. “Stress Assisted Grain Growth” (SAGG) é então proposto como uma técnica potencial para desenhar a microestrutura de materiais funcionais, originando microestruturas anisotrópicas texturizadas com propriedades desejadas.

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A novel filter based on e-plane metal-dielectric insert in rectangular waveguide is proposed. Properties of the structure containing metallic septa, C- and I-shaped resonators placed in waveguide are investigated. Pseudo-elliptic cross-coupled filter with direct source-load coupling is designed, simulated and fabricated. Experimental results are presented to prove feasibility of the filter. Significant size reduction is achieved.

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Thesis (Ph.D.)--University of Washington, 2016-03

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This paper is a contribution for the assessment and comparison of magnet properties based on magnetic field characteristics particularly concerning the magnetic induction uniformity in the air gaps. For this aim, a solver was developed and implemented to determine the magnetic field of a magnetic core to be used in Fast Field Cycling (FFC) Nuclear Magnetic Resonance (NMR) relaxometry. The electromagnetic field computation is based on a 2D finite-element method (FEM) using both the scalar and the vector potential formulation. Results for the magnetic field lines and the magnetic induction vector in the air gap are presented. The target magnetic induction is 0.2 T, which is a typical requirement of the FFC NMR technique, which can be achieved with a magnetic core based on permanent magnets or coils. In addition, this application requires high magnetic induction uniformity. To achieve this goal, a solution including superconducting pieces is analyzed. Results are compared with a different FEM program.

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Polarized reflectance measurements of the quasi I-D charge-transfer salt (TMTSFh CI04 were carried out using a Martin-Puplett-type polarizing interferometer and a 3He refrigerator cryostat, at several temperatures between 0.45 K and 26 K, in the far infrared, in the 10 to 70 cm- 1 frequency range. Bis-tetramethyl-tetraselena-fulvalene perchlorate crystals, grown electrochemically and supplied by K. Behnia, of dimensions 2 to 4 by 0.4 by 0.2 mm, were assembled on a flat surface to form a mosaic of 1.5 by 3 mm. The needle shaped crystals were positioned parallel to each other along their long axis, which is the stacking direction of the planar TMTSF cations, exposing the ab plane face (parallel to which the sheets of CI04 anions are positioned). Reflectance measurements were performed with radiation polarized along the stacking direction in the sample. Measurements were carried out following either a fast (15-20 K per minute) or slow (0.1 K per minute) cooling of the sample. Slow cooling permits the anions to order near 24 K, and the sample is expected to be superconducting below 1.2 K, while fast cooling yields an insulating state at low temperatures. Upon the slow cooling the reflectance shows dependence with temperature and exhibits the 28 cm- 1 feature reported previously [1]. Thermoreflectance for both the 'slow' and 'fast' cooling of the sample calculated relative to the 26 K reflectance data indicates that the reflectance is temperature dependent, for the slow cooling case only. A low frequency edge in the absolute reflectance is assigned an electronic origin given its strong temperature dependence in the relaxed state. We attribute the peak in the absolute reflectance near 30 cm-1 to a phonon coupled to the electronic background. Both the low frequency edge and the 30 cm-1 feature are noted te shift towards higher frequcncy, upon cntering the superconducting state, by an amount of the order of the expected superconducting energy gap. Kramers-Kronig analysis was carried out to determine the optical conductivity for the slowly cooled sample from the measured reflectance. In order to do so the low frequency data was extrapolated to zero frequency using a Hagen-Ru bens behaviour, and the high frequency data was extended with the data of Cao et al. [2], and Kikuchi et al. [3]. The real part of the optical conductivity exhibits an asymmetric peak at 35 cm-1, and its background at lower frequencies seems to be losing spectral weight with lowering of the temperature, leading us to presume that a narrow peak is forming at even lower frequencies.

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The perovskite crystal structure is host to many different materials from insulating to superconducting providing a diverse range of intrinsic character and complexity. A better fundamental description of these materials in terms of their electronic, optical and magnetic properties undoubtedly precedes an effective realization of their application potential. SmTiOa, a distorted perovskite has a strongly localized electronic structure and undergoes an antiferromagnetic transition at 50 K in its nominally stoichiometric form. Sr2Ru04 is a layered perovskite superconductor (ie. Tc % 1 K) bearing the same structure as the high-tem|>erature superconductor La2_xSrrCu04. Polarized reflectance measurements were carried out on both of these materials revealing several interesting features in the far-infrared range of the spectrum. In the case of SmTiOa, although insulating, evidence indicates the presence of a finite background optical conductivity. As the temperature is lowered through the ordering temperature a resonance feature appears to narrow and strengthen near 120 cm~^ A nearby phonon mode appears to also couple to this magnetic transition as revealed by a growing asymmetry in the optica] conductivity. Experiments on a doped sample with a greater itinerant character and lower Neel temperature = 40 K also indicate the presence of this strongly temperature dependent mode even at twice the ordering temperature. Although the mode appears to be sensitive to the magnetic transition it is unclear whether a magnon assignment is appropriate. At very least, evidence suggests an interesting interaction between magnetic and electronic excitations. Although Sr2Ru04 is highly anisotropic it is metallic in three-dimensions at low temperatures and reveals its coherent transport in an inter-plane Drude-like component to the highest temperatures measured (ie. 90 K). An extended Drude analysis is used to probe the frequency dependent scattering character revealing a peak in both the mass enhancement and scattering rate near 80 cm~* and 100 cm~* respectively. All of these experimental observations appear relatively consistent with a Fermi-liquid picture of charge transport. To supplement the optical measurements a resistivity station was set up with an event driven object oriented user interface. The program controls a Keithley Current Source, HP Nano-Voltmeter and Switching Unit as well as a LakeShore Temperature Controller in order to obtain a plot of the Resistivity as a function of temperature. The system allows for resistivity measurements ranging from 4 K to 290 K using an external probe or between 0.4 K to 295 K using a Helium - 3 Cryostat. Several materials of known resistivity have confirmed the system to be robust and capable of measuring metallic samples distinguishing features of several fiQ-cm.

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The process of depositing thin films by the use of pulsed laser deposition (PLD) has become a more widely used technique for the growth of substances in a thin film form. Pulsed laser deposition allows for the stoichiometric film growth of the target which is of great significance in the deposition of High Temperature Superconducting materials. We will describe a system designed using an excimer laser and vaccum chamber in which thin films and superlattices of YBa2Cuj07_i, PrBa2Cu307_i, and YBajCujOr-j/ PrBajCusOr-^ were deposited on SrTiOs. Results of resistivity measurements using the four probe technique will be shown.

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/c-(BETS)2FeBr4 is the first antiferromagnetic organic superconductor with successive antiferromagnetic and superconducting transitions at Ta^=2.5K and Tc=l.lK respectively at ambient pressure. Polarized reflectance measurements were performed on three single crystalsamples of this material using a Briiker IFS66V/S Interferometer, and a Bolometer detector or an MCT detector, at seven temperatures between 4K and 300K, in both the far-infrared and mid-infrared frequency range. After the reflectance results were obtained, the Kramers-Kronig dispersion relation was apphed to determine the optical conductivity of /c-(BETS)2FeBr4 at these seven temperatures. Additionally, the optical conductivity spectra were fitted with a Drude/Lorentz Oscillator model in order to study the evolution of the optical conductivity with temperature along the a-axis and c-axis. The resistivities calculated from the Drude model parameters along the a-axis and c-axis agreed reasonably with previous transport measurements.

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K-(BETS)2FeBr4 is a quasi-2D charge transfer organic metal with interesting electronic and magnetic properties. It undergoes a transition to an antiferromagnetic (AF) state at ambient pressure at the Neel temperature (T^^) = 2.5 K, as well as to a superconducting (SC) state at 1.1 K [1]. The temperature dependence of the electrical resistivity shows a small decrease at T;v indicating the resistivity drops as a result of the onset of the ordering of Fe'*''" spins. A sharp drop in the resistivity at 1.1 K is due to its superconducting transition. The temperature dependence of the susceptibility indicates an antiferromagnetic spin structure with the easy axis parallel to the a-axis. The specific heat at zero-field shows a large peak at about 2.4 K, which corresponds to the antiferromagnetic transition temperature (Tat) and no anomaly is observed around the superconducting transition temperature (1.1 K) demonstrating that the magnetically ordered state is not destroyed by the appearance of another phase transition (the superconducting transition) in the 7r-electron layers [1], [2]. This work presents an investigation of how the low frequency electromagnetic response is affected by the antiferromagnetic and superconducting states, as well as the onset of strong correlation. The location of the easy axis of three samples was determined and polarized thermal reflectance measurements of these «-(BETS)2FeBr4 samples oriented with their vertical axis along the a- and c axes were then carried out using a *He refrigerator cryostat and a Martin-Puplett type polarizing interferometer at various temperatures (T = 0.5 K, 1.4 K. 1.9 K, 2.8 K) above and below the superconducting state and/or antiferromagnetic state. Comparison of the SC state to the normal state along the o- and c-axes indicates a rising thermal reflectance at low frequencies (below 10 cm"' ) which may be a manifestation of the superconducting energy gap. A dip-Hke feature is detected at low frequencies (below 15 cm"') in the thermal reflectance plots which probe the antiferromagnetic state along the two axes, and may be due to the opening of a gap in the excitation spectrum as a result of the antiferromagnetism. In another set of experiments, thermal reflectance measurements carried out along the a- and c-axes at higher temperatures (10 K-80 K) show that the reflectivity decreases with increasing temperature to 60 K (the coherence temperature) above which it increases again. Comparison of the thermal reflectance plots along the a- and c-axes at higher temperatures reveals an anisotropy between these two axes. The Hagen-Rubens thermal reflectance plots corresponding to an average over the ac-plane were calculated using experimental hterature resistivity values. Comparison of the Hagen-Rubens plots with the experimental thermal reflectance along the a- and c-axes indicates that both exhibit the general trend of a decrease in thermal reflectance with increasing frequency, however the calculated Hagen-Rubens thermal reflectance at different temperatures is much lower than the experimental curves.

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Using the Physical Vapor Transport method, single crystals of Cd2Re207 have been grown, and crystals of dimensions up to 8x6x2 mm have been achieved. X-ray diffraction from a single crystal of Cd2Re207 has showed the crystal growth in the (111) plane. Powder X-ray diffraction measurements were performed on ^^O and ^^O samples, however no difference was observed. Assigning the space group Fd3m to Cd2Re207 at room temperature and using structure factor analysis, the powder X-ray diffraction pattern of the sample was explained through systematic reflection absences. The temperatiure dependence of the resistivity measurement of ^^O has revealed two structural phase transitions at 120 and 200 K, and the superconducting transition at 1.0 K. Using Factor Group Analysis on three different structiures of Cd2Re207, the number of IR and Raman active phonon modes close to the Brillouin zone centre have been determined and the results have been compared to the temperature-dependence of the Raman shifts of ^^O and ^*0 samples. After scaling (via removing Bose-Einstein and Rayleigh scattering factors from the scattered light) all spectra, each spectrum was fitted with a number of Lorentzian peaks. The temperature-dependence of the FWHM and Raman shift of mode Eg, shows the effects of the two structurjil phase transitions above Tc. The absolute reflectance of Cd2Re207 - '^O single crystals in the far-infrared spectral region (7-700 cm~^) has been measured in the superconducting state (0.5 K), right above the superconducting state (1.5 K), and in the normal state (4.2 K). Thermal reflectance of the sample at 0.5 K and 1.5 K indicates a strong absorption feature close to 10 cm~^ in the superconducting state with a reference temperature of 4.2 K. By means of Kramers-Kronig analysis, the absolute reflectance was used to calculate the optical conductivity and dielectric function. The real part of optical conductivity shows five distinct active phonon modes at 44, 200, 300, 375, and 575 cm~' at all temperatures including a Drude-like behavior at low frequencies. The imaginary part of the calculated dielectric function indicates a mode softening of the mode 44 cm~' below Tc.

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Polycrysttdline samples of NaiCoOa were prepared using the "Rapid heat-up" method. One set of samples was annealed in flowing O2, while the other set in flowing Argon. X-Ray diffraction measurements indicated a stable phase of Nao.7Co02 mixed with C03O4 for all the samples even though they differed in concentration of Na. Argon annealed samples were insulators, whereas the ones annealed in O2 were metallic. Most of the measurements were performed on the sample Nao.7Co02, because it is the host compound for the superconductor sample Nao.35Co02-H20. Magnetization measurement showed that the magnetic moment decreased with increasing sodium concentration. This is due to the existence of C03O4 in samples with Na^ 0.7. As sodium concentration decreases, the magnetic moment increases due to the increasing concentration of C03O4 and its large magnetic moment. Magnetization measurements showed that the magnetic moment of Nao.7Co02 is field-dependent in low fields eind field-independent in fields higher than 100 G. Resistivity changes with temperature (dp/dT) increased with increasing Na concentration. Also resistivity measurements were performed under different hydrostatic pressures on Nao.7Co02. Two transitions were observed; one at a temperature Ti ~20 K and the other at T2 ^280 K, the transition at Ti has a magnetic origin and the one at T2 is a structiural transition. It was noticed that pressure aJfects resistivity of the sample. At higher pressures resistivity changes faster with temperature. Magnetoresistance measurement showed a small change in the resistivity, especially at lower temperatures. A novel layered superconductor Nao.35Co02H20 was prepared using de-intercalation of Na from the host compound Nao.7Co02. FVom the temperature dependence of the magnetization, the superconducting transition temperature and lower critictil field have been estimated as Tc=4.12 K and Hci=66 G, respectively.

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The optical response to far infrared radiation has been measured on a mosaic of heavy fermion CeColnssingle crystals. The superconducting transition temperature of the crystals has been determined by van der Pauw resistivity and ac-susceptibility measurements as Tc = 2.3 K. The optical measurements were taken above and below the transition temperature using a 3He cryostat and step and integrate Martin-Puplett type polarizing interferometer. The absolute reflectance of the heavy fermion CeColns in the superconducting state in range (0, 100)cm-1 was calculated from the measured thermal reflectance, using the normal state data of Singley et al and a low frequency extrapolation for a metallic material in the Hagen-Rubens regime. By means of Kramers-Kronig analysis the absolute reflectance was used to calculate the optical conductivity of the sample. The real part of the calculated complex conductivity 0-(w) ofCeColns indicates a possible opening of an energy gap close to 50 em-I.