Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals

The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.

Modeling Study on the Entrainment of Ambient Air into Subsonic Laminar and Turbulent Argon Plasma Jets

Modeling study is performed to reveal the special features of the entrainment of ambient air into subsonic laminar and turbulent argon plasma jets. Two different types of jet flows are considered, i.e., the argon plasma jet is impinging normally upon a flat substrate located in atmospheric air surroundings or is freely issuing into the ambient air. It is found that the existence of the substrate not only changes the plasma temperature, velocity and species concentration distributions in the near-substrate region, but also significantly enhances the mass flow rate of the ambient air entrained into the jet due to the additional contribution to the gas entrainment of the wall jet formed along the substrate surface. The fraction of the additional entrainment of the wall jet in the total entrained-air flow rate is especially high for the laminar impinging plasma jet and for the case with shorter substrate standoff distances. Similarly to the case of cold-gas free jets, the maximum mass flow-rate of ambient gas entrained into the turbulent impinging or free plasma jet is approximately directly proportional to the mass flow rate at the jet inlet. The maximum mass flow-rate of ambient gas entrained into the laminar impinging plasma jet slightly increases with increasing jet-inlet velocity but decreases with increasing jet-inlet temperature.

Nonparametric Bayesian Density Modeling with Gaussian Processes

We present the Gaussian process density sampler (GPDS), an exchangeable generative model for use in nonparametric Bayesian density estimation. Samples drawn from the GPDS are consistent with exact, independent samples from a distribution defined by a density that is a transformation of a function drawn from a Gaussian process prior. Our formulation allows us to infer an unknown density from data using Markov chain Monte Carlo, which gives samples from the posterior distribution over density functions and from the predictive distribution on data space. We describe two such MCMC methods. Both methods also allow inference of the hyperparameters of the Gaussian process.