Compression and tensile properties of self-reinforced poly(ethylene terephthalate)-composites

Tensile and compression properties of self-reinforced poly(ethylene terephthalate) (SrPET) composites has been investigated. SrPET composites or all-polymer composites have improved mechanical properties compared to the bulk polymer but with maintained recyclability. In contrast to traditional carbon/glass fibre reinforced composites, SrPET composites are very ductile, resulting in high failure strains without softening or catastrophic failure. In tension, the SrPET composites behave linear elastically until the fibre-matrix interface fails, at which point the stiffness starts decreasing. As the material is further strained, strain hardening occurs and the specimen finally fails at a global strain above 10%. In compression, the composite initially fails through fibre yielding, and at higher strains through fibre bending. The stress-strain response is reminiscent of an elastic-perfectly plastic material with a high strain to failure (typically over 10%). This indicates that SrPET composites are not only candidates as semi-structural composites but also as highly efficient energy absorbing materials. © 2012 Elsevier Ltd. All rights reserved.

Notch and strain rate sensitivity of non-crimp fabric composites

The notch and strain rate sensitivity of non-crimp glass fibre/vinyl-ester laminates subjected to uniaxial tensile loads has been investigated experimentally. Two sets of notch configurations were tested; one where circular holes were drilled and another where fragment simulating projectiles were fired through the plate creating a notch. Experiments were conducted for strain rates ranging from 10-4 s-1 to 102 s-1 using servo hydraulic machines. A significant increase in strength with increasing strain rate was observed for both notched and un-notched specimens. High speed photography revealed changes in failure mode, for certain laminate configurations, as the strain rate increased. The tested laminate configurations showed fairly small notch sensitivity for the whole range of strain rates. © 2008 Elsevier Ltd. All rights reserved.

Notch and strain rate sensitivity of non crimp fabric composites

The notch and strain rate sensitivity of non-crimp glass fibre/vinyl-ester laminates subjected to uniaxial tensile loads has been investigated experimentally. Two set of notch configurations were tested; one where circular holes were drilled and another where fragment simulating projectiles were fired through the plate creating a notch. Experiments were conducted for strain rates ranging from 10-4/s to 102/s using servo hydraulic machines. A significant increase in strength with increasing strain rate was observed for both notched and unnotched specimens. High speed photography revealed changes in failure mode, for certain laminate configurations, as the strain rate increased. The tested laminate configurations showed fairly small notch sensitivity for the whole range of strain rates.

Revealing lithium-silicide phase transformations in nano-structured silicon-based lithium ion batteries via in situ NMR spectroscopy.

Nano-structured silicon anodes are attractive alternatives to graphitic carbons in rechargeable Li-ion batteries, owing to their extremely high capacities. Despite their advantages, numerous issues remain to be addressed, the most basic being to understand the complex kinetics and thermodynamics that control the reactions and structural rearrangements. Elucidating this necessitates real-time in situ metrologies, which are highly challenging, if the whole electrode structure is studied at an atomistic level for multiple cycles under realistic cycling conditions. Here we report that Si nanowires grown on a conducting carbon-fibre support provide a robust model battery system that can be studied by (7)Li in situ NMR spectroscopy. The method allows the (de)alloying reactions of the amorphous silicides to be followed in the 2nd cycle and beyond. In combination with density-functional theory calculations, the results provide insight into the amorphous and amorphous-to-crystalline lithium-silicide transformations, particularly those at low voltages, which are highly relevant to practical cycling strategies.

Micro-electro-mechanical resonant tilt sensor with 250 nano-radian resolution

This paper reports a high-resolution frequency-output MEMS tilt sensor based on resonant sensing principles. The tilt sensor measures orientation by sensing the component of gravitational acceleration along a specified input axis. A combination of design enhancements enables significantly higher sensitivity for this device as compared to previously reported prototype sensors. The MEMS tilt sensor is calibrated on a manual tilt table over tilt angles ranging over 0-90 degrees with a relatively linear response measured in the range of ±20°(linearity error <2.3%) with a scale factor of approximately 50.06 Hz/degree. The noise-limited resolution of the sensor is found to be approximately 250 nano-radians for an integration time of 0.8 s, which is over an order of magnitude better than previously reported results [1]. © 2013 IEEE.

The effect of carbon nanotube orientation on erosive wear resistance of CNT-epoxy based composites

Aligned carbon nanotube (CNT) polymer composites are envisioned as the next-generation composite materials for a wide range of applications. In this work, we investigate the erosive wear behavior of epoxy matrix composites reinforced with both randomly dispersed and aligned carbon nanotube (CNT) arrays. The aligned CNT composites are prepared in two different configurations, where the sidewalls and ends of nanotubes are exposed to the composite surface. Results have shown that the composite with vertically aligned CNT-arrays exhibits superior erosive wear resistance compared to any of the other types of composites, and the erosion rate reaches a similar performance level to that of carbon steel at 20° impingement angle. The erosive wear mechanism of this type of composite, at various impingement angles, is studied by Scanning Electron Microscopy (SEM). We report that the erosive wear performance shows strong dependence on the alignment geometries of CNTs within the epoxy matrix under identical nanotube loading fractions. Correlations between the eroded surface roughness and the erosion rates of the CNT composites are studied by surface profilometry. This work demonstrates methods to fabricate CNT based polymer composites with high loading fractions of the filler, alignment control of nanotubes and optimized erosive wear properties. © 2014 Elsevier Ltd. All rights reserved.

Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces

p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.

Electroluminescence from nano-crystalline Si/SiO2 structures embedded in pn junctions

Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p-i-n structures containing nano-crystalline Si/SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p(+)-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron-hole pairs in the luminescent nanocrystalline Si/SiO2 system. (C) 2008 Elsevier Ltd. All rights reserved.

Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs

Nano-patterned sapphire substrates (NPSSs) were fabricated by a chemical wet etching technology using nano-sized SiO2 as masks. The NPSS was applied to improve the performance of GaN-based light emitting diodes (LEDs). GaN-based LEDs on NPSSs were grown by metal organic chemical vapour deposition. The characteristics of LEDs grown on NPSSs and conventional planar sapphire substrates were studied. The light output powers of the LEDs fabricated on NPSSs were considerably enhanced compared with that of the conventional LEDs grown on planar sapphire substrates.

Influence factors on wear resistance of two alumina matrix composites

We measured the wear resistances of alumina, alumina/silicon carbide composite and alumina/mullite composite by abrasive wear. And we studied the influence of fracture mode and worn surface pullout on wear resistance. The results are as follows: the main wear mechanisms of alumina and alumina/silicon carbide were fracture wear and plastic wear respectively, and for alumina/mullite composite, fracture wear and plastic wear mechanisms worked together. The wear resistance of the alumina/silicon carbide composite and the alumina/mullite composite was better by a factor of 1 similar to 3 than that of the monolithic alumina. There were two main reasons for the better wear resistance, i.e., the improved mechanical properties and the more smooth worn surfaces. However, The primary reason was the reduction of area fraction of pullout on the worn surfaces induced by fracture mode transition. (C) 2007 Published by Elsevier B.V.

Wear resistance of reaction sintered alumina/mullite composites

Alumina and alumina/mullite composites with mullite content of 0.96-8.72 vol.% were subjected to an abrasive wear test under loads of 0.1-2.0 N with a ball-on-disc apparatus. The wear rate and area fraction of pullout f(po) on the worn surfaces were measured. The wear resistances of the alumina/mullite composites were better by a factor of 1-2 than that of pure alumina. The main wear mechanism of alumina is fracture wear, and for alumina/mullite composites, fracture wear and plastic wear mechanisms work together. The influence of mechanical properties on wear resistance was estimated by Evans' method. It was found that the wear rate depends on f(po), and the primary reason for the better wear resistance of alumina/mullite composites is the reduction off, induced by fracture mode transition. (c) 2007 Elsevier B.V. All rights reserved.

Electronic structure of a hydrogenic acceptor impurity in semiconductor nano-structures

The electronic structure and binding energy of a hydrogenic acceptor impurity in 2, 1, and 0-dimensional semiconductor nano-structures (i.e. quantum well (QW), quantum well wire (QWW), and quantum dot (QD)) are studied in the framework of effective-mass envelope-function theory. The results show that (1) the energy levels monotonically decrease as the quantum confinement sizes increase; (2) the impurity energy levels decrease more slowly for QWWs and QDs as their sizes increase than for QWs; (3) the changes of the acceptor binding energies are very complex as the quantum confinement size increases; (4) the binding energies monotonically decrease as the acceptor moves away from the nano-structures' center; (5) as the symmetry decreases, the degeneracy is lifted, and the first binding energy level in the QD splits into two branches. Our calculated results are useful for the application of semiconductor nano-structures in electronic and photoelectric devices.

Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers

Nano-crystalline Si/SiO2 multilayers were prepared by alternately changing the ultra-thin amorphous Si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. Well-defined periodic structures can be achieved with 2.5 nm thick SiO2 sublayers. It is shown that the size of formed nano-crystalline Si is about 3 nm. Room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. In order to improve the hole injection probability, p-i-n structures containing a nanocrystalline Si/SiO2 luminescent layer were designed and fabricated on different p-type substrates. It is found that the turn-on voltage of p-i-n structures is obviously reduced and the luminescence intensity increases by 50 times. It is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.