High-quality metamorphic HEMT grown on GaAs substrates by MBE

Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved.

Structural properties of SI-GaAs grown in space

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition, the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode.

Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density

In this report, we have investigated the temperature and injection power dependent photoluminescence in self-assembled InAs/GaAs quantum dots (QDs) systems with low and high areal density, respectively. It was found that, for the high-density samples, state filling effect and abnormal temperature dependence were interacting. In particular, the injection power-induced variations were most obvious at the temperature interval where carriers transfer from small quantum dots (SQDs) to large quantum dots (LQDs). Such interplay effects could be explained by carrier population of SQDs relative to LQDs, which could be fitted well using a thermal carrier rate equation model. On the other hand, for the low density sample, an abnormal broadening of full width at half maximum (FWHM) was observed at the 15-100 K interval. In addition, the FWHM also broadened with increasing injection power at the whole measured temperature interval. Such peculiarities of low density QDs could be attributed to the exciton dephasing processes, which is similar to the characteristic of a single quantum dot. The compared interplay effects of high-and low-density QDs reflect the difference between an interacting and isolated QDs system.

Analysis of leakage current in GaAs micro-solar cell arrays

The output characteristics of micro-solar cell arrays are analyzed on the basis of a modified model in which the shunt resistance between cell lines results in current leakage. The modification mainly consists of adding a shunt resistor network to the traditional model. The obtained results agree well with the reported experimental results. The calculation results demonstrate that leakage current in substrate affects seriously the performance of GaAs micro- solar cell arrays. The performance of arrays can be improved by reducing the number of cells per line. In addition, at a certain level of integration, an appropriate space occupancy rate of the single cell is recommended for ensuring high open circuit voltages, and it is more appropriate to set the rates at 80%-90% through the calculation.

Facile Synthesis and Characterization of Single Crystalline Bi2S3 with Various Morphologies

Single crystalline Bi2S3 With various morphologies (wires, rods, and flowers) has been successfully prepared via a simple polyol solution process and characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) techniques. The morphologies of Bi2S3 crystals are highly dependent on the experimental parameters, including the reaction temperature, reactant ratio, sulfur source, and additive. The adjustment of these parameters can lead to an obvious shape evolution of products, and the growth mechanism has been proposed.

Nucleation and growth of glycine crystals with controllable sizes and polymorphs on Langmuir-Blodgett films

Control of crystal polymorph and size is very important in many application fields. Herein we demonstrate that Langmuir-Blodgett (LB) films of stearic acid (SA) and octadecylamine (ODA) can serve as templates and generate different polymorphs of glycine crystals. In the neutral aqueous solutions, gamma-glycine crystallizes on LB films of ODA while the polymorphic outcome becomes the (x-form on LB films of SA. These observed results could be explained by the electrostatic interactions and geometric lattice matching at the LB film/crystal interfaces, respectively. By keeping the appropriate supersaturation, we have successfully controlled the number of crystals grown on LB films; for example, in some certain cases, only one piece of crystal was grown on LB films in solution. Therefore, large crystals of centimeter size could be prepared. These experimental results suggest a new approach to produce an organic crystal with bulk scale.

Tight intermolecular packing through supramolecular interactions in crystals of cyano substituted oligo(para-phenylene vinylene): a key factor for aggregation-induced emission

Strong supramolecular interactions, which induced tight packing and rigid molecules in crystals of cyano substituent oligo(para-phenylene vinylene) (CN-DPDSB), are the key factor for the high luminescence efficiency of its crystals; opposite to its isolated molecules in solution which have very low luminescence efficiency.

Highly enhanced luminescence from single-crystalline C-60 center dot 1m-xylene nanorods

Single-crystalline C-60 center dot 1m-xylene nanorods with a hexagonal structure were successfully synthesized by evaporating a C-60 solution in m-xylene at room temperature. The ratio of the length to the diameter of the nanorods can be controlled in the range of approximate to 10 to over 1000 for different applications. The photoluminescence (PL) intensity of the nanorods is about 2 orders of magnitude higher than that for pristine C-60 crystals in air. Both UV and Raman results indicate that there is no charge transfer between C-60 and m-xylene. It was found that the interaction between C-60 and m-xylene molecules is of the van der Waals type. This interaction reduces the icosahedral symmetry of C-60 molecule and induces strong PL from the solvate nanorods.

Synthesis using electrospinning and stabilization of single layer macroporous films and fibrous networks of poly(vinyl alcohol)

We demonstrated in this paper an electrospinning technique could be employed to prepare the single layer macroporous films and fibrous networks of poly(vinyl alcohol) (PVA). A crucial element using electrospinning on the development of these electrospun structures was to shorten the distance of from the needle tip to the collector (L), which resulted in the bond of the wet fibers deposited on the collector at the junctions. The morphologies and average pore size of electrospun structures of PVA were mainly predominated by L and the time of collecting wet fibers on the collector. In addition, experimental results showed that an increase of the PVA concentration or a decrease of the applied voltage could also diminish slightly the average pore size of electrospun productions. Furthermore, a 60 degrees C absolute ethanol soak to PVA electrospun production led them to be able to stabilize in water for 1 month against disintegration. Differential scanning calorimetry (DSC) demonstrated that the 60 degrees C ethanol soak enhanced the degree of crystallinity of PVA production. The structural characteristic of macroporous films and networks in combination with their easy processability suggests potential utility in issue engineering applications.

The single crystal-like banded textures in the films of a thermotropic liquid crystalline poly(aryl ether ketone) containing a lateral chloro group

The banded textures in the films of a thermotropic liquid crystalline poly(aryl ether ketone) containing a lateral chloro group have been studied by means of transmission electron microscopy(TEM), electron diffraction(ED) and atomic force microscopy (AFM). The crystallization-induced Landed texture without external shear can be formed when the thin films were annealed at the temperature range(320-330 degrees C) of the liquid crystalline state from the melt, The results show that the banded regions have high orientation of single crystal based on the orthorhombic packing and the growing direction of the Lands is along the b axis of the crystals, This kind of single crystal-like bands is due to the different orientation of the packing molecular chains, The molecular chains of the dark bands in the bright field electron micrograph are perpendicular to the film plane, while the ones of the bright Lands are tilt along the b axis with the tilt angle upto +/-20 degrees.

Self-organization of BaF2 single crystal film under a compressed Langmuir monolayer

Self-organization of BaF2 single crystal film under a compressed monolayer of behenic acid (BA) has been investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The experimental results indicated the (100)-oriented single crystal film of BaF2 was formed under the BA monolayer. The relation between the BaF2 single crystal and the monolayer was discussed.

Double twist in helical polymer "soft" crystals

In natural and synthetic materials having non-racemic chiral centers, chirality and structural ordering each play a distinct role in the formation of ordered states. Configurational chirality can be extended to morphological chirality when the phase, structures possess low liquid crystalline order. In the crystalline states the crystallization process suppresses the chiral helical morphology due to strong ordering interactions, In this Letter, we report the first observation of helical single lamellar crystals of synthetic non-racemic chiral polymers. Experimental evidence shows that the molecular chains twist along both the long and short axes of the helical lamellar crystals, which is the first time a double-twist molecular orientation in a helical crystal has been observed.