Interface states of laser ablated BaTiO3 and Ba0.9Ca0.1TiO3 thin films in MFS structure determined by DLTS and C – V technique

BaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

Engineered Biferroic 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3/La0.6Sr0.4MnO3 Epitaxial Superlattices

Symmetric and asymmetric superlattices (SLs) composed of ferromagnetic La0.6Sr0.4MnO3 (LSMO) and ferroelectric 0.7Pb(Mg1/3Nb2/3)O3 – 0.3PbTiO3 (PMN-PT) with different periodicities have been fabricated on LaNiO3 (LNO) coated LaAlO3 (100) (LAO) substrates by pulsed laser ablation deposition. Structural, ferromagnetic and ferroelectric properties have been studied for all the SLs. All the heterostructures exhibited good ferromagnetic response over a wide range of temperatures (10K – 300K), whereas only the asymmetric SLs exhibited reasonably good ferroelectric behaviour. Ferromagnetic and ferroelectric hysteresis loops observed in the asymmetric SLs confirmed their biferroic nature. Studies were conducted towards understanding the influence of LSMO layers on the electrical responses of the heterostructures. Absence of ferroelectricity in the symmetric SL structures has been attributed to their high leakage characteristics. Strong influence of an applied magnetic field of 1.2T was observed on the ferroelectric properties of the asymmetric SLs. The effect of magnetic field on the ferroelectric properties of the SLs indicated possibility of strong interfacial effect.

Field Induced Dielectric Properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Thin Films

DC electric field induced dielectric properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were studied as a function of frequency at different temperatures. It was observed that the dielectric constant (ε) and dissipation factor (tanδ) were decreased in presence of bias field. The temperature of dielectric maxima was found to increase with increasing bias level. The low temperature (ferroelectric behavior. Since the absence of long range interaction among the nanopolar clusters in PMN and its family is believed to be the origin of relaxor behavior, disappearance of relaxor nature in PMN-PT (70/30) films could be attributed to manifestation of long-range order at higher bias voltage. This was observed in the temperature dependence of dielectric constant i.e. the films neither exhibited any frequency dispersion in the temperature of dielectric maximum (Tm) nor showed any diffused phase transition. The relaxor property of PMN-PT thin films was studied in terms of diffused phase transition together with frequency dispersion of the temperature of dielectric maximum (Tm). Vogel-Fulcher relation was used to analyze the frequency dependence of temperature of dielectric maximum.

Dielectric Properties of Pulsed Excimer Laser Ablated BaBi2Nb2O9 Thin Films

The dielectric response of BaBi2Nb2O9 (BBN) thin films has been studied as a function of frequency over a wide range of temperatures. Both dielectric constant and loss tangent of BBN thin films showed a ‘power law’ dependence with frequency, which was analyzed using the Jonscher's universal dielectric response model. Theoretical fits were utilized to compare the experimental results and also to estimate the value of temperature dependence parameters such as n(T) and a(T) used in the Jonscher's model. The room temperature dielectric constant (ε') of the BBN thin films was 214 with a loss tangent (tanδ) of 0.04 at a frequency of 100 kHz. The films exhibited the second order dielectric phase transition from ferroelectric to paraelectric state at a temperature of 220 °C. The nature of phase transition was confirmed from the temperature dependence of dielectric constant and sponteneous polarization,respectively. The calculated Currie constant for BBN thin films was 4 × 105°C.

Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

A study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

Performance evaluation of nonthermal plasma reactors for NO oxidation in diesel engine exhaust gas treatment

The discharge plasma-chemical hybrid process for NOinfinity removal from the flue gas emissions is an extremely effective and economical approach in comparison with the conventional selective catalytic reduction system. In this paper we bring out a relative comparison of several discharge plasma reactors from the point of NO removal efficiency. The reactors were either energized by ac or by repetitive pulses. Ferroelectric pellets were used to study the effect of pellet assisted discharges on gas cleaning. Diesel engine exhaust, at different loads; is used to approximately simulate the flue gas composition. Investigations were carried out at room temperature with respect to the variation of reaction products against the discharge power. Main emphasis is laid on the oxidation of NO to NO2, without reducing NOx concentration (i.e., minimum reaction byproducts), with least power consumption. The produced NO2 will be totally converted to N-2 and Na-2 SO4 using Na-2 SO3. The ac packed-bed reactor and pelletless pulsed corona reactor showed better performance, with minimum reaction products for a given power, when the NO concentration was low (similar to 100 ppm). When the engine load exceeds 50% (NO > 300 ppm) there was not much decrease in NO reduction and more or less all the reactors performed equally. The total operating cost of the plasma-chemical hybrid system becomes $4010/ton of NO, which is 1/3-1/5 of the conventional selective catalytic process.

Radiation resistance of PFN and PNM-PT relaxor ferroelectrics

The relaxor ferroelectric compositions Pb(Fe1/2Nb1/2)O-3 (PEN) and [Pb(Mg1/3Nb2/3)O-3](0.8)-[PbTiO3](0.2) (PMN-PT) are studied for their radiation response to the high energy heavy ions (50 MeV Li3+, fluence 1 X 10(13)-1 X 10(14) ions/cm(2)) in terms of their structural, dielectric and piezoelectric properties. There was no change in the crystallinity of both the compositions after irradiation as seen from the XRD. The PEN composition did not show much change in the dielectric constant but the value of T-m decreased by 8degreesC. The PMN-PT composition showed an increase in the dielectric constant with increase in the irradiation fluence from 1 x 10(13) to 1 X 10(14) ions/cm(2) with no change in the value of T-m. The piezoelectric coefficient decreased in both the samples after irradiation. Among the compositions studied, PEN is observed to be more radiation resistant to changes in structural and dielectric properties than PM-PT. (C) 2003 Elsevier Ltd. All rights reserved.

Role of La0.5Sr0.5COO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O-3-PbTiO3 thin films

Relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) deposited on platinized silicon substrates with and without template layers were studied. Perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on bare Pt/Ti/SiO2/Si substrates. The films were initially grown at 300 degreesC using pulsed-laser ablation and subsequently annealed in a rapid thermal annealing furnace in the temperature range of 750-850 degreesC to induce crystallization. Comparison of microstructure of the films annealed at different temperatures showed change in perovskite phase formation and grain size etc. Results from compositional analysis of the films revealed that the films initially possessed high content of lead percentage, which subsequently decreased after annealing at temperature 750-850 degreesC. Films with highest perovskite content were found to form at 820-840 degreesC on Pt substrates where the Pb content was near stoichiometric. Further improvement in the formation of perovskite PMN-PT phase was obtained by using buffer layers of La0.5Sr0.5CoO3 (LSCO) on the Pt substrate. This resulted 100% perovskite phase formation in the films deposited at 650 degreesC. Dielectric studies on the PMN-PT films with LSCO template layers showed high values of relative dielectric constant (3800) with a loss factor (tan delta) of 0.035 at a frequency of 1 kHz at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Structural changes in single-walled carbon nanotubes under non-hydrostatic pressures: x-ray and Raman studies

Using in situ x-ray diffraction and Raman scattering techniques, we have investigated the behaviour of single-walled carbon nanotubes bundles under non-hydrostatic pressures. It is seen that the diffraction line corresponding to the two-dimensional triangular lattice in the bundles is not reversible for pressures beyond 5 GPa, in sharp contrast to earlier results under hydrostatic pressure conditions. Most interestingly, radial breathing and tangential Raman modes of the pressure-cycled samples from 21 and 30 GPa match very well with those of the starting sample. Raman and x-ray results put together clearly suggest that the ordering of tubes in the bundles is only marginally regained with a very short coherence length on decompression.

Visualizing lone pairs in compounds containing heavier congeners of the carbon and nitrogen group elements

In this mini-review, I discuss some recent work on the stereochemistry and bonding of lone pairs of electrons in divalent compounds of the heavier carbon group elements (SnII, PbII) and in trivalent compounds of the heavier nitrogen group elements (BiIII). Recently developed methods that permit the real-space visualization of bonding patterns on the basis of density functional calculations of electronic structure, reveal details of the nature of s electron lone pairs in compounds of the heavier main group elements – their stereochemistry and their inertness (or lack thereof). An examination of tetragonal P4/nmm SnO, a-PbO and BiOF, and cubic Fm3m PbS provides a segue into perovskite phases of technological significance, including ferroelectric PbTiO3 and antiferroelectric/piezoelectric PbZrO3, in both of which the lone pairs on Pb atoms play a pivotal rôle.

Interacting magnetic sublattices and ferrimagnetism in Sr-doped DyMnO3

We present the magnetic properties of polycrystalline Dy1−xSrxMnO3 (0.1 ≤ x ≤ 0.4) with an orthorhombic (o) crystal structure. The parent compound, o-DyMnO3, undergoes an incommensurate antiferromagnetic ordering of the Mn spins at 39 K, followed by a spiral order at 18 K. A further antiferromagnetic transition at 5 K marks an ordering of the Dy-sublattice. Doping of divalent Sr ions results in diverse magnetization phenomena. The zero-field cooled (ZFC) and field cooled (FC) magnetization curves display the presence of strongly interacting magnetic sublattices. For x = 0.1 and 0.2, a bifurcation between the ZFC and FC magnetization sets in at around 30 and 32 K, respectively. The ZFC magnetization peaks at about 5 K, indicating antiferromagnetic Dy-couplings similar to the case of o-DyMnO3. For x = 0.3, clear signatures of ferrimagnetism and strong anisotropy are found, including negative magnetization. The compound with x = 0.4 behaves as a spin glass, similar to Dy0.5Sr0.5MnO3.

Structure and Bonding in Stannadiphospholes and their Dianions SnC(2)P(2)R(2)(m) (R=H, tBu m=0,-2): A Comparative Study with C(5)H(5)(+) and C(5)H(5)(-) Analogues

The potential energy surfaces of both neutral and dianionic SnC(2)P(2)R(2) (R=H, tBu) ring systems have been explored at the B3PW91/LANL2DZ (Sn) and 6-311 + G* (other atoms) level. In the neutral isomers the global minimum is a nido structure in which a 1,2-diphosphocyclobutadiene ring (1,2-DPCB) is capped by the Sn. Interestingly, the structure established by Xray diffraction analysis, for R=tBu, is a 1,3-DPCB ring capped by Sn and it is 2.4 kcal mol(-1) higher in energy than the 1,2-DPCB ring isomer. This is possibly related to the kinetic stability of the 1,3-DPCB ring, which might originate from the synthetic precursor ZrCp(2)tBu(2)C(2)P(2). In the case of the dianionic isomers we observe only a 6 pi-electron aromatic structure as the global minimum, similarly to the cases of our previously reported results with other types of heterodiphospholes.([1,4,19]) The existence of large numbers of cluster-type isomers in neutral and 6 pi-planar structures in the dianions SnC(2)P(2)R(2)(2-) (R=H, tBu) is due to 3D aromaticity in neutral clusters and to 2D pi aromaticity of the dianionic rings. Relative energies of positional isomers mainly depend on: 1) the valency and coordination number of the Sn centre, 2) individual bond strengths, and 3) the steric effect of tBu groups. A comparison of neutral stannadiphospholes with other structurally related C(5)H(5)(+) analogues indicates that Sn might be a better isolobal analogue to P(+) than to BH or CH(+). The variation in global minima in these C(5)H(5)(+) analogues is due to characteristic features such as 1) the different valencies of C, B, P and Sn, 2) the electron deficiency of B, 3) weaker p pi-p pi bonding by P and Sn atoms, and 4) the tendency of electropositive elements to donate electrons to nido clusters. Unlike the C5H5+ systems, all C(5)H(5)(-) analogues have 6 pi-planar aromatic structures as global minima. The differences in the relative ordering of the positional isomers and ligating properties are significant and depend on 1) the nature of the pi orbitals involved, and 2) effective overlap of orbitals.

Quantum destruction of spiral order in two-dimensional frustrated magnets

We study the fate of spin-1/2 spiral-ordered two-dimensional quantum antiferromagnets that are disordered by quantum fluctuations. A crucial role is played by the topological point defects of the spiral phase, which are known to have a Z(2) character. Previous works established that a nontrivial quantum spin-liquid phase results when the spiral is disordered without proliferating the Z(2) vortices. Here, we show that when the spiral is disordered by proliferating and condensing these vortices, valence-bond solid ordering occurs due to quantum Berry phase effects. We develop a general theory for this latter phase transition and apply it to a lattice model. This transition potentially provides a new example of a Landau-forbidden deconfined quantum critical point.