Intrinsic spin hall effect induced by quantum phase transition in HgCdTe quantum wells

The spin Hall effect can be induced by both extrinsic impurity scattering and intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. By tuning the Cd content, the well width, or the bias electric field across the quantum well, the intrinsic spin Hall effect can be switched on or off and tuned into resonance under experimentally accessible conditions.

Spin states and persistent currents in a quantum ring with an embedded magnetic impurity

Spin states and persistent currents are investigated theoretically in a quantum ring with an embedded magnetic ion under a uniform magnetic field including the spin-orbit interactions. The magnetic impurity acts as a spin-dependent delta-potential for electrons and results in gaps in the energy spectrum, consequently suppressing the oscillation of the persistent currents. The competition between the Zeeman splittings and the s-d exchange interaction leads to a transition of the electron ground state in the ring. The interplay between the periodic potential induced by the Rashba and Dresselhaus spin-orbit interactions and the delta-potential induced by the magnetic impurity leads to significant variation in the energy spectrum, charge density distribution, and persistent currents of electrons in the ring.

Spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells

The electronic states of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells are investigated theoretically in the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling. The splits of electron energy levels are calculated. The results show that (1) the split energy of the excited state is larger than that of the ground state; (2) the split energy peak appears as the GaAs well width increases from zero; and (3) the maximum split energy reaches about 1.6 meV. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices. (c) 2008 American Institute of Physics.

Excitonic bright-to-dark transition induced by spin-orbit coupling

The center-of-mass motion of quasi-two-dimensional excitons with spin-orbit coupling is calculated within the framework of effective mass theory. The results indicate that the spin-orbit coupling will induce a controllable bright-to-dark transition in a quasi-two-dimensional exciton system. This procedure can work as a way to increase the lifetime of excitons. (c) 2008 American Institute of Physics.

Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas

We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation.

Spin states in InAs/AlSb/GaSb semiconductor quantum wells

We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those obtained by the single-band Rashba model due to the electron-hole hybridization. The Rashba spin splitting of the lowest conduction subband shows an oscillating behavior. The D'yakonov-Perel' spin-relaxation time shows several peaks with increasing the Fermi wave vector. By inserting an AlSb barrier between the InAs and GaSb layers, the hybridization can be greatly reduced. Consequently, the spin orientation, the spin splitting, and the D'yakonov-Perel' spin-relaxation time can be tuned significantly by changing the thickness of the AlSb barrier.

Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure

We report experimental results of the effect of Ka-band microwave on the spin dynamics of electrons in a two-dimensional electron system (2DES) in a GaAs/Al0.35Ga0.65As heterostructure via time-resolved Kerr rotation measurements. While the microwave reduces the transverse spin lifetime of electrons in the bulk GaAs, it significantly increases that in the 2DES, from 745 to 1213 ps, when its frequency is close to the Zeeman splitting of the electrons in the magnetic field. Such a microwave-enhanced spin lifetime is ascribed to the microwave-induced electron scattering which leads to a "motional narrowing" of spins via D'yakonov-Perel' mechanism.

Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings

Circular dichromatic absorption difference spectroscopy is developed to measure the spin diffusion dynamics of electrons in bulk n-GaAs. This spectroscopy has higher detection sensitivity over homodyne detection of spin-grating-diffracted signal. A model to describe circular dichromatic absorption difference signal is derived and used to fit experimental signal to retrieve decaying rate of spin gratings. A spin diffusion constant of D-s=201 +/- 25 cm(2)/s for bulk n-GaAs has been measured at room temperature using this technique and is close to electron diffusion constant (D-c), which is much different from the case in GaAs quantum wells where D-s is markedly less than D-c.

Electric-tunable magneto resistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure

The electric-tunable spin-independent magneto resistance effect has been theoretically investigated in ballistic regime within a two-dimensional electron gas modulated by magnetic-electric barrier nanostructure. By including the omitted stray field in previous investigations oil analogous structures, it is demonstrated based on this improved approximation that the magnetoresistance ratio for the considered structure can be efficiently enhanced by a proper electric barrier up to the maximum value depending on the specific magnetic suppression. Besides, it is also shown the introduction of positive electrostatic modulation can effectively overcome the degradation of magnetoresistance ratio for asymmetric configuration and enhance the visibility of periodic pattern induced by the size effect, while for an opposite modulation the system magnetoresistance ratio concerned may change its sign. (C) 2009 Elsevier B.V. All rights reserved.

Anisotropic transport in quantum waveguides due to the spin-orbit interactions

We theoretically investigate the charge transport in the quantum waveguides in the presence of the Rashba spin-orbit interaction and the Dresselhaus spin-orbit interaction. We find that the interplay between the Rashba spin-orbit interaction and Dresselhaus spin-orbit interaction can induce a symmetry breaking and consequently leads to the anisotropic charge transport in the quantum waveguides, the conductance through the quantum waveguides depends sensitively on the crystallographic orientations of the quantum waveguides. The anisotropy of the charge transport can even survive in the presence of disorder effect in realistic systems.

Spin Hall effect on the kagome lattice with Rashba spin-orbit interaction

We study the spin Hall effect in the kagome lattice with Rashba spin-orbit coupling. The conserved spin Hall conductance sigma(s)(xy) (see text) and its two components, i.e., the conventional term sigma(s0)(xy) and the spin-torque-dipole term sigma(s tau)(xy), are numerically calculated, which show a series of plateaus as a function of the electron Fermi energy epsilon(F). A consistent two-band analysis, as well as a Berry-phase interpretation, is also given. We show that these plateaus are a consequence of various Fermi-surface topologies when tuning epsilon(F). In particular, we predict that compared to the case with the Fermi surface encircling the Gamma point in the Brillouin zone, the amplitude of the spin Hall conductance with the Fermi surface encircling the K points is twice enhanced, which makes it highly meaningful in the future to systematically carry out studies of the K-valley spintronics.

Dyakonov-Perel spin relaxation in InSb/AlxIn(1-x)Sb quantum wells

We investigate theoretically the Dyakonov-Perel spin relaxation time by solving the eight-band Kane model and Poisson equation self-consistently. Our results show distinct behavior with the single-band model due to the anomalous spin-orbit interactions in narrow band-gap semiconductors, and agree well with the experiment values reported in recent experiment [K. L. Litvinenko et al., New J. Phys. 8, 49 (2006)]. We find a strong resonant enhancement of the spin relaxation time appears for spin align along [1 (1) over bar0] at a certain electron density at 4 K. This resonant peak is smeared out with increasing the temperature.

Electronic structure of self-assembled InAs quantum disks in an axial magnetic field and two-electron quantum-disk qubit

We have studied the single-electron and two-electron vertically assembled quantum disks in an axial magnetic field using the effective mass approximation. The electron interaction is treated accurately by the direct diagonalization of the Hamiltonian matrix. We calculate the six energy levels of the single-electron quantum disks and the two lowest energy levels of the two-electron quantum disks in an axial magnetic field. The change of the magnetic field strongly modifies the electronic structures as an effective potential, leading to the splitting of the levels and the crossings between the levels. The effect of the vertical alignment on the electronic structures is discussed. It is demonstrated that the switching of the ground-state spin exists between S=0 and S=1. The energy difference DeltaE between the lowest S=0 and S=1 states is shown as a function of the axial magnetic field. It is also found that the variation of the energy difference between the lowest S=0 and S=1 states in the strong-B S=0 state is fairly linear. Our results provide a possible realization for a qubit to be fabricated by current growth techniques. (C) 2004 American Institute of Physics.

Electron and hole states in diluted magnetic semiconductor quantum dots

The electronic structure of a diluted magnetic semiconductor (DMS) quantum dot (QD) is studied within the framework of the effective-mass theory. We find that the energies of the electron with different spin orientation exhibit different behavior as a function of magnetic field at small magnetic fields. The energies of the hole decreases rapidly at low magnetic fields and saturate at higher magnetic field due to the sp-d exchange interaction between the carriers and the magnetic ions. The mixing effect of the hole states in the DMS QD can be tuned by changing the external magnetic field. An interesting crossing behavior of the hole ground state between the heavy-hole state and the light-hole state is found with variation of the QD radius. The strength of the interband optical transition for different circular polarization exhibts quite different behavior with increasing magnetic field and QD radius.

Photon-assisted Fano resonance and corresponding shot noise in a quantum dot

We have studied the Fano resonance in photon-assisted transport through a quantum dot. Both the coherent current and the spectral density of shot noise have been calculated. It is predicted that the shape of the Fano profile will also appear in satellite peaks. It is found that the variations of Fano profiles with the strengths of nonresonant transmissions are not synchronous in absorption and emission sidebands. The effect of interference on photon-assisted pumped current has also been investigated. We further predict the current and spectral density of shot noise as a periodic function of the phase, which exhibits an intrinsic property of resonant and nonresonant channels in the structures.