放牧对内蒙古草原植物C:N:P化学计量特征和资源分配的影响

C���N、P是生物地球化学循环中的重要元素，其可利用性和各元素之间的平衡关系将生态系统的物质循环有机统一为一个整体。化学计量生态学为研究这几种基本元素间的平衡提供了一个有力的理论框架。许多研究表明，过度放牧会改变生态系统的结构和功能，而放牧如何影响植物的C:N:P化学计量关系的却少见报道。本研究以内蒙古锡林河流域沿水分梯度分布的草甸、草甸草原、典型草原和沙地四种植被类型中的灰脉苔草（Carex appendiculata）、贝加尔针茅(Stipa baicalensis)、羊草(Leymus chinensis)、大针茅(Stipa grandis)、小叶锦鸡儿(Caragana microphylla)、冷蒿(Artemisia frigid)、克氏针茅(S. krylovii)和榆树(Ulmus Pumila)疏林沙地8个草地群落为研究对象，对长期禁牧样地和自由放牧样地中273种植物，其中禁牧与放牧样地中的共有植物种为144个，测定了植物叶片C: N: P化学计量特征以及植株高度、丛幅面积、茎、叶和株（丛）生物量、茎叶比等功能性状，系统地研究了放牧对植物C:N:P化学计量特征和资源分配的影响。取得了如下主要研究结果和结论： 1. 放牧降低了植物叶片的C:N比，但增加了N:P比和C:P比。C:N:P 化学计量比的变化主要受叶片N和P含量变化的影响； 2. 植物C:N:P化学计量特征对放牧的响应同时受水分条件的制约。沿水分梯度分布的不同植被类型中，植物叶片C:N:P化学计量特征对放牧的响应不同。草甸群落中，植物叶片C���量显著降低，N和P含量显著增加；在草甸草原群落中，植物叶片C���P含量减少，N含量显著增加；而在典型草原群落中，植物叶片C���N和P含量均显著降低； 3. 在物种水平上，C���N、P含量对放牧的响应分为：显著增加、显著降低和没有显著变化三种类型。放牧影响下，植物叶片N含量和N:P比在显著升高的物种多于显著降低的，而叶片C���量、C:N和C:P显著降低的物种占的比例很小，表明植物对放牧适应策略与物种本身的生物学特性有着密切的关系。 4. 过度放牧使植物的植株高度、丛幅大小、株丛数、茎叶比和单株生物量均显著降低，即植物整体呈现小型化现象，进而导致群落初级生产力、茎和叶生物量下降。轻度放牧对物种的资源分配没有显著影响，单株（丛）生物量和群落茎、叶及总生物量均呈增加趋势，这与过度放牧的影响正好相反。 5. 过度放牧显著改变了物种的资源分配策略，使生物量向叶的分配比例增加，向茎的分配比例减少。资源优先向同化器官分配可能是草地植物对长期放牧干扰的一种重要适应对策。

Preliminary observations on the effect of a. c. current on Catla catla and Ophicephalus punctatus

In order to evolve suitable electrical fishing gear for inland waters, preliminary experiments have been conducted to observe effect of a. c. currents on Catla catla at voltages of 30, 90 and 120, pH 7.3 and 8.4, temperature 48°F, 78°F and 105°F, distance between electrodes 25 cm, 50 cm and 75 cm, size range of fish 100 mm, to 235 mm. Apparatus used was a 5 kw; a. c. 60 cycles generator with resistance control. Larger sizes of fish were more prone to electric shock. Higher temperature increases the intensity of the shock, while variation of pH between 7.3 to 8.4 did not materially affect the intensity of the shock. Fishing with a mixed population of Catla catla and Ophicephalus punctatus gave a greater percentage of mortality for the latter.

Investigation of the losses in the stator duct spacers of large A.C. motors using the A -ip 3-D eddy current formulation

This paper describes how the A -if) formulation may be applied to determine the losses in the stator duct spacers of large a.c. motors. The model is described in terms of its geometry and boundary conditions. The novel aspects of the application of the formulation to this problem are explained. These include the modelling of fixed currents sources (the stator windings), the location of the necessary cut surfaces and the determination of their magnetic scalar potential differences, and the implementation of periodic boundary conditions for vector variables. Results are presented showing how the duct spacer losses vary with load, and with the relative permeability of the spacer material. The effects of modelling iron nonlinearity, of both the spacer and the steel laminations, are also illustrated. © 1996 IEEE.

Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

中国4种蝙蝠的G-带和C-带

首次报道了中国4种蝙蝠的G-带和C-带核型。大长舌果蝠(Eonycteris spelaea)二倍染色体数目(2n)为36,常染色体臂数(FN)为56;马来假吸血蝠(Megaderma spasma)2n=38,FN=70;黑髯墓蝠(Taphozous melanopogon)2n=42,FN=64;皱唇蝠(Chaerephon plicata)2n=48,FN=54。通过C-带显示,除着丝粒异染色质外,在皱唇蝠的许多染色体臂内和马来假吸血蝠染色体的端粒处也有较多的插入异染色质,大长舌果蝠的基因组中既有臂内异染色质也有端粒异染色质。