通过阴离子转Ziegler-Natta聚合机理转换合成PS-b-EPM

能够作为聚烯烃材料与其它聚合物材料共混增容剂的、含有聚烯烃链段的嵌段共聚物的合成，对于扩大聚烯烃材料的应用，获得性能优良的共混型聚合物材料具有重要意义。烯烃类单体聚合方法单一，而且其通用的聚合方法，Ziegler-Natta聚合，不是令人满意的合成嵌段共聚物的方法。因此，含有聚烯烃链段的嵌段共聚物的合成一直是比较困难的研究课题之一，近年来发展起来的阴离子转Ziegler-Natta聚合方法为合成这类嵌段共聚物开辟了新途径。阴离子转Ziegler-Natta聚合是利用阴离子聚合所得到的活性聚合物及其反离子与过渡金属化合物组成“Ziegler-Natta”催化剂使烯类单体聚合，从而得到含有聚烯烃链段和阴离子聚合物链段的嵌段共聚物的一种新的合成方法。这种结合两种聚合机理的聚合方法能够有效地避免单一机理聚合方法对单体的要求和限制，从而扩大了嵌段共聚物的合成范围。目前，有关阴离子转Ziegler-Natta聚合方法的研究工作尚属于初步阶段，许多基本问题还没有统一的结论。本工作的目的就是对这一聚合方法的聚合规律，特点等基本问题进行初步探讨，为今后这方面工作的开展奠定初步基础。本工作以阴离子转Ziegler-Natta聚合为方法，以PS-EPM嵌段共聚物为合成对象，并通过对产物的组成、分子量、序列分布、温度转变行为及形态的表征，可初步得到以下结论。1、在较低的催化剂浓度下，可使催化效率比较高。在本聚合体系下，最高可达694克EPM段/克Ti。这一数值与一般非载体钛催化体系相比是比较高的。2、在合适的聚合条件下，如聚合时间较短，聚合温度较低，可得到分子量分布较窄的嵌段共聚物，并且基本上不含有非嵌段烯烃共聚物。3、以聚苯乙烯作为阴离子段聚合物，可发生较明显的β-消除反应，使产物中含有难以分离的烯烃共聚物，本工作以几个单元的聚异戊二烯作为聚苯乙烯活性离子的端基，有效地抑制了β-消除反应的发生，得到了比较纯净的PS-EPM嵌段共聚物。5、由阴离子转来的“Ziegler-Natta聚合具有阴离子聚合和Ziegler-Natta聚合的共同特点，是介于阴离子聚合和Ziegler-Natta聚合之间的一种特殊聚合形式；在聚合初期主要呈现阴离子聚合特征随着聚合的进行，逐渐向具有Ziegler-Natta聚合特征的聚合形式过渡。

PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH

A systematic investigation on the photoluminescence (PL) properties of InxGa1-xAs/AlyGa1-xAs (x = 0.15, y = 0, 0.33) strained quantum wells (SQWs) with well widths from 1.7 to 11.0 nm has been performed at 77 K under high pressure up to 40 kbar. The experimental results show that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband increase from 10.05 meV/kbar of 11.0 nm well to 10.62 meV/kbar of 1.8 nm well for In0.15Ga0.85As/GaAs SQWs. However, the corresponding pressure coefficients slightly decrease from 9.93 meV/kbar of 9.0 nm well to 9.73 meV/kbar of 1.7 nm well for In0.15Ga0.85As/Al0.33Ga0.67As SQWs. Calculations based on the Kronig-Penney model reveal that the increased or decreased barrier heights and the increased effective masses with pressure are the main reasons of the change in the pressure coefficients.

PRESSURE BEHAVIOR OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTHS

The photoluminescence of InxGa1-xAs/GaAs strained quantum wells with widths of 30 angstrom to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It is found that the pressure coefficients of exciton peaks from 1st conduction subband to heavy hole subband increase from 9.74 meV/kbar for a 160 angstrom well to 10.12 meV/kbar for a 30 angstrom well. The calculation based on the Kronig-Penney model indicated that the extension of the electronic wave function to the barrier layer in the narrow wells is one of the reasons for the increase of the pressure coefficients with the decrease of well width. Two peaks related to indirect transitions were observed at pressures higher than 50 kbar.

DIFFERENT INTERDIFFUSION CHARACTERISTICS BETWEEN AG/YBA2CU3O7-X AND AL/YBA2CU3O7-X CONTACT INTERFACES

The differences between the interdiffusion characteristics of Ag/YBa2Cu3O7-x and Al/YBa2Cu3O7-x contact interfaces have been revealed by secondary ion mass spectrometry (SIMS). The different electrical properties of Ag/YBa2Cu3O7-x and YBa2Cu3O7-x films after high temperature treatment are well understood by the SIMS results.

Comparison of Loss and Crosstalk Characteristics of SOI Based Intersecting Waveguides with Different Bend Structures

By means of two dimension beam propagation method (2D-BPM) with high order Pade approximation, behaviors of SOI waveguide based bend intersections with variant bending radius are simulated and analized. The result shows that crosstalk of intersections decreases with the increase of bending radius and intersecting angle. Furthermore, loss and crosstalk characteristics of bend intersections formed by sine bend, cosine bend and arc bend are compared. Sine bend based structures are proved that it can present lowest loss and smallest crosstalk properties among the three and may find their wide application in the design of bend intersections and other more complicated photonic devices and circuits.

Multimode Interference Couplers with Different Background Refractive Index *

A novel structure of MMI coupler with different background refractive index has been designed. With stronger optical confinement in multimode waveguides, more guided modes are excited to improve imaging quality. Two-dimensional finite difference beam propagation method (2-D FDBPM) was used to simulate this new structure and had proven that its imaging quality, in terms of power uniformity and excess loss, is much better than conventional structure. This structure can be applied in SOI rib waveguides by deep etching method.

Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers

The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.