Kinetics of photoinduced anisotropy in bacteriorhodopsin film under two pumping beams

Photoinduced anisotropy in bacteriorhodopsin (BR) film arises from the selective bleaching of BR molecules to linearly polarized light. The kinetics of photoinduced anisotropy excited by single and two pumping beams are investigated theoretically and experimentally. Compared with a single pumping beam (650 nm), which produces comparatively small photoinduced anisotropy, dual-wavelength linearly polarized pumping beams (650 and 405 nm) can obviously change the photoinduced anisotropy. When the polarization orientation of the 405 ran pumping beam is perpendicular to that of the 650 nm pumping beam, the peak and steady values of the photoinduced anisotropy kinetic curves are remarkably enhanced. But when the two pumping beams have parallel polarization orientation, the peak and steady values are restrained. At a fixed intensity of the 650 nm pumping beam, there exists an optimal intensity for the 405 nm pumping beam to maximize the value of the photoinduced anisotropy. The photoinduced transmittance of the polarizer-BR-analyzer system is modulated by the polarization angle of the 405 nm pumping beam in an approximate-cosine form. (C) 2008 Optical Society of America.

Effect of reconstruction beam polarization on the kinetics of anisotropic gratings in bacteriorhodopsin

Anisotropic gratings are recorded on bacteriorhodopsin films by two parallelly polarized beams, and the effect of the polarization orientation of the reconstructing beam on the diffraction efficiency kinetics is studied. A theoretical model for the diffraction efficiency kinetics of the anisotropic grating is developed by combining Jones-matrix and photochromic two-state theory. It is found that the polarization azimuth of the reconstructing beam produces a cosine modulation on the kinetics of the diffraction efficiency, being positive at the peak efficiency and negative for steady state. By adding auxiliary violet light during grating formation, the saturation of the grating can be restrained. As a result, the negative cosine modulation for the steady-state diffraction efficiency changes to a positive one. In addition, the steady-state diffraction efficiency is increased appreciably for all reconstructing polarization orientations. (c) 2008 Optical Society of America.

Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires

The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.

POWER DEPENDENCE OF THE RECOMBINATION PROCESSES IN THE INXGA1-XAS/GAAS SINGLE-QUANTUM-WELL

We have measured the power dependence of the photoluminesence spectra from a set of strained InxGa1-xAs/GaAs single quantum wells. The result shows that the excitation power has important effect on the carrier recombination processes. When the power increases from 0.5 to 14 mW, the photoluminescence from the barrier becomes more intense than that from the well and the trapping efficiency decreases. At high excitation level, the ratio of the radiative recombination rate to the nonradiative recombination rate of the barrier increases ten times than that at lower excitation level, while it only doubles for the well.

RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI

We report fundamental changes of the radiative recombination in a wide range of n-type and p-type GaAs after diffusion with the group-I element Li. These optical properties are found to be a bulk property and closely related to the electrical conductivity of the samples. In the Li-doped samples the radiative recombination is characterized by emissions with excitation-dependent peak positions which shift to lower energies with increasing degree of compensation and concentration of Li. These properties are shown to be in qualitative agreement with fluctuations of the electrostatic potential in strongly compensated systems. For Li-diffusion temperatures above 700-800-degrees-C semi-insulating conditions with electrical resistivity exceeding 10(7) OMEGA cm are obtained for all conducting starting materials. In this heavy Li-doping regime, the simple model of fluctuating potentials is shown to be inadequate for explaining the. experimental observations unless the number of charged impurities is reduced through complexing with Li. For samples doped with low concentrations of Li, on the other hand, the photoluminescence properties are found to be characteristic of impurity-related emissions.

AN ANALYSIS OF CHARGE STATES FOR LOCAL VIBRATIONAL-MODES BY OXYGEN DEFECTS IN SEMI-INSULATING GAAS

The high-resolution spectral measurements for new local vibrational modes near 714 cm-1 due to the oxygen defect in semi-insulating GaAs are analyzed on the basis of a model calculation by self-consistent bond orbital approach. Two charge states of oxygen atom with 1 and 2 extra electrons are assigned to be responsible for these local modes. The observed frequencies are explained by the properties of Ga-O-1 and Ga-O-2 bonds and the calculated cohesive energy indicates that the O-2 state is stable. The results are in good agreement with the kinetic analysis.

THE OXIDATION-KINETICS OF THIN POLYCRYSTALLINE SILICON FILMS

The oxidation dynamics and morphology of undoped and heavily phosphorus-doped polycrystalline silicon films oxidized at a wide temperature and time range in dry and wet O2 atmosphere have been investigated. It is shown that the oxidation rates of polycrystalline silicon films are different from that of single-crystal silicon when the oxidation temperature is below 1000-degrees-C. There is a characteristic oxidation time, t(c), under which the undoped polysilicon oxide is not only thicker than that of (100)-oriented single-crystal silicon, but also thicker than that of (111)-oriented single-crystal silicon. For phosphorus-doped polycrystalline silicon films, the oxide thickness is thinner not only than that of (111)-oriented, single-crystal silicon, but also thinner than that of (100)-oriented, single-crystal silicon. According to TEM cross-sectional studies, these characteristics are due to the enhanced oxidation at grain boundaries of polycrystalline silicon films. A stress-enhanced oxidation model has been proposed and used to explain successfully the enhanced oxidation at grain boundaries of polycrystalline silicon films. Using this model, the oxidation linear rate constant of polysilicon (B/A)poly has been calculated and used in the modeling of the oxidation dynamics. The model results are in good agreement with the experimental data over the entire temperature and time ranges studied.

Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)

We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V.

Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x

A numerical model that combines mass transport and surface kinetics was applied, for the first time, to the chemical vapor epitaxy of GexSi1-x. The temperature, velocity and concentration fields were calculated from the conservation equations for energy, momentum and species coupled with the boundary conditions on the growth surface which were determined by surface kinetics. The deposition rates of Si and Ge were assumed to be limited, respectively, by surface kinetics and mass transport. A theoretical relation between the initial conditions and the Ge composition in the solid was established. The calculated growth rate as well as the Ge composition in the solid and its dependence on growth temperature agree well with experimental data.

Characterization of recombination centres in n-type Hg1-xCdxTe

The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.

Photoluminescence investigation of charge build-up process in the emitter of a double-barrier resonant tunneling structure

Charge build-up process in the emitter of a double-barrier resonant tunneling structure is studied by using photoluminescence spectroscopy. Clear evidence is obtained that the charge accumulation in the emitter keeps almost constant with bias voltages in the resonant regime, while it increases remarkably with bias voltages beyond resonant regime. The optical results are in good agreement with the electrical measurement. It is demonstrated that the band gap renormalization plays a certain rob in the experiment.

An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

An asymmetric MOSFET-C band-pass filter(BPF)with on chip charge pump auto-tuning is presented.It is implemented in UMC (United Manufacturing Corporation)0.18μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump OUtputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point(HP3) is 16.621 dBm,wim 50 Ω as the source impedance. The input referred noise iS about 47.455μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm~2 and it can be utilized in GPS (global positioning system)and Bluetooth systems.