Effect of Target Polarization in Electron-Ion Recombination

We present results of a study of the effect of target polarization on electron-ion recombination, and show that coherent radiation by the target electrons gives a large contribution to the recombination rate. It significantly modifies the nonresonant photorecombination background. A procedure has been devised whereby this contribution can be evaluated together with the conventional radiative recombination, independently of the dielectronic recombination component. Numerical results are presented for Zn2+, Cd2+, Sn4+, and Xe8+, showing up to an order-of-magnitude enhancement.

Parity nonconservation in electron recombination of multiply charged ions

We discuss a parity nonconserving asymmetry in the cross section of KLL dielectronic recombination of polarized electrons on the hydrogenlike ions with Z less than or similar to 60. This effect is strongly enhanced because of the near degeneracy of doubly excited 2l2l(') states of opposite parity in He-like ions. For ions with Z similar to 30 the asymmetry is of the order of 10(-9). For Z approximate to 48 a level crossing takes place, leading to the PNC asymmetry of -1.3x10(-8), which is 10(8) times greater than the basic strength of the weak interaction in atoms.

The role of target polarization in electron-ion recombination

We investigate the role of dynamic polarization of the target electrons in the process of recombination of electrons with multicharged ions (polarizational recombination). Numerical calculations carried out for a number of Ni- and Ne-like ions demonstrate that the inclusion of polarizational recombination leads to a noticeable increase (up to 30%) in the cross sections for incident electron energies outside the regions of dielectronic resonances. We also present a critical analysis of theoretical approaches used by other authors to describe the phenomenon of polarizational recombination.

Numerical simulation of the charge balance in an EBIT

The electron beam ions traps (EBITs) are widely used to study highly charged ions (HCIs). In an EBIT, a high energy electron beam collides with atoms and ions to generate HCIs in the trap region. It is important to study the physics in the trap. The atomic processes, such as electron impact ionisation (EI), radiative recombination (RR), dielectronic recombination (DR) and charge exchange (CX), occur in the trap and numerical simulation can give some parameters for design, predict the composition and describe charge state evolution in an EBIT [Phys. Rev. A 43 (199 1) 4861]. We are presently developing a new code, which additionally includes a description of the overlaps between the ion clouds of the various charge-states. It has been written so that it can simulate experiments where various machine parameters (e.g. beam energy and current) can vary throughout the simulation and will be able to use cross- sections either based on scaling laws or derived from atomic structure calculations. An object-oriented method is used in developing the new software, which is an efficient way to organize and write code. (C) 2003 Elsevier Science B.V. All rights reserved.