On the existence of Zeno behavior in hybrid systems with non-isolated zeno equilibria

This paper presents proof-certificate based sufficient conditions for the existence of Zeno behavior in hybrid systems near non-isolated Zeno equilibria. To establish these conditions, we first prove sufficient conditions for Zeno behavior in a special class of hybrid systems termed first quadrant interval hybrid systems. The proof-certificate sufficient conditions are then obtained through a collection of functions that effectively "reduce" a general hybrid system to a first quadrant interval hybrid system. This paper concludes with an application of these ideas to Lagrangian hybrid systems, resulting in easily verifiable sufficient conditions for Zeno behavior. © 2008 IEEE.

Lyapunov-like conditions for the existence of zeno behavior in hybrid and lagrangian hybrid systems

Lyapunov-like conditions that utilize generalizations of energy and barrier functions certifying Zeno behavior near Zeno equilibria are presented. To better illustrate these conditions, we will study them in the context of Lagrangian hybrid systems. Through the observation that Lagrangian hybrid systems with isolated Zeno equilibria must have a onedimensional configuration space, we utilize our Lyapunov-like conditions to obtain easily verifiable necessary and sufficient conditions for the existence of Zeno behavior in systems of this form. © 2007 IEEE.

Anisotropic AC Behavior of Multifilamentary Bi-2223/Ag Tapes

In this communication, we report on the anisotropy of the superconducting properties of multifilamentary Bi-based tapes experimentally investigated by AC magnetic susceptibility measurements. The susceptibility $\chi= \chi' - j \chi''$ was measured using a commercial system and a couple of orthogonal pick-up coils. The $\chi''$ vs. temperature curves were shown to exhibit two peaks. The smaller of the peaks, occurring near T = 72K, was only visible for particular field directions and within a given frequency window. Such results point out the role played by the phase difference between the applied magnetic field and the internal magnetic field seen by the filaments.

Modeling cyclic behavior of lightly overconsolidated clays in simple shear

Assessment of seismic performance and estimation of permanent displacements for submerged slopes require the accurate description of the soil's stress-strain-strength relationship under irregular cyclic loading. The geological profile of submerged slopes on the continental shelf typically consists of normally to lightly overconsolidated clays with depths ranging from a few meters to a few hundred meters and very low slope angles. This paper describes the formulation of a simplified effective-stress-based model, which is able to capture the key aspects of the cyclic behavior of normally consolidated clays. The proposed constitutive law incorporates anisotropic hardening and bounding surface principles to allow the user to simulate different shear strain and stress reversal histories as well as provide realistic descriptions of the accumulation of plastic shear strains and excess pore pressure during successive loading cycles. (C) 2000 Published by Elsevier Science Ltd. | Assessment of seismic performance and estimation of permanent displacements for submerged slopes require the accurate description of the soil's stress-strain-strength relationship under irregular cyclic loading. The geological profile of submerged slopes on the continental shelf typically consists of normally to lightly overconsolidated clays with depths ranging from a few meters to a few hundred meters and very low slope angles. This paper describes the formulation of a simplified effective-stress-based model, which is able to capture the key aspects of the cyclic behavior of normally consolidated clays. The proposed constitutive law incorporates anisotropic hardening and bounding surface principles to allow the user to simulate different shear strain and stress reversal histories as well as provide realistic descriptions of the accumulation of plastic shear strains and excess pore pressures during successive loading cycles.

Growth behavior of epitaxial semiconductor axial nanowire heterostructures

In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires. © 2008 IEEE.

Statistics anxiety, trait anxiety, learning behavior, and academic performance

The present study investigated the relationship between statistics anxiety, individual characteristics (e.g., trait anxiety and learning strategies), and academic performance. Students enrolled in a statistics course in psychology (N=147) filled in a questionnaire on statistics anxiety, trait anxiety, interest in statistics, mathematical selfconcept, learning strategies, and procrastination. Additionally, their performance in the examination was recorded. The structural equation model showed that statistics anxiety held a crucial role as the strongest direct predictor of performance. Students with higher statistics anxiety achieved less in the examination and showed higher procrastination scores. Statistics anxiety was related indirectly to spending less effort and time on learning. Trait anxiety was related positively to statistics anxiety and, counterintuitively, to academic performance. This result can be explained by the heterogeneity of the measure of trait anxiety. The part of trait anxiety that is unrelated to the specific part of statistics anxiety correlated positively with performance.

Subsurface transport behavior of micro-nano bubbles and potential applications for groundwater remediation.

Micro-nano bubbles (MNBs) are tiny bubbles with diameters on the order of micrometers and nanometers, showing great potential in environmental remediation. However, the application is only in the beginning stages and remains to be intensively studied. In order to explore the possible use of MNBs in groundwater contaminant removal, this study focuses on the transport of MNBs in porous media and dissolution processes. The bubble diameter distribution was obtained under different conditions by a laser particle analyzer. The permeability of MNB water through sand was compared with that of air-free water. Moreover, the mass transfer features of dissolved oxygen in water with MNBs were studied. The results show that the bubble diameter distribution is influenced by the surfactant concentration in the water. The existence of MNBs in pore water has no impact on the hydraulic conductivity of sand. Furthermore, the dissolved oxygen (DO) in water is greatly increased by the MNBs, which will predictably improve the aerobic bioremediation of groundwater. The results are meaningful and instructive in the further study of MNB research and applications in groundwater bioremediation.

Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs

As an important step in understanding trap-related mechanisms in AlGaN/GaN transistors, the physical properties of surface states have been analyzed through the study of the transfer characteristics of a MISFET. This letter focused initially on the relationship between donor parameters (concentration and energy level) and electron density in the channel in AlGaN/GaN heterostructures. This analysis was then correlated to dc and pulsed measurements of the transfer characteristics of a MISFET, where the gate bias was found to modulate either the channel density or the donor states. Traps-free and traps-frozen TCAD simulations were performed on an equivalent device to capture the donor behavior. A donor concentration of 1.14× 1013 ∼ cm-2 with an energy level located 0.2 eV below the conduction band edge gave the best fit to measurements. With the approach described here, we were able to analyze the region of the MISFET that corresponds to the drift region of a conventional HEMT. © 1980-2012 IEEE.

The effect of incomplete ionization on the turn-off behavior of FS IGBTs

This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gate bipolar transistors (FS IGBTs). This effect needs to be considered in FS IGBTs TCAD modeling to match accurately the device characteristics across a wide range of temperatures. The acceptor ionization energy (EA) governing the I.I. mechanism for the p-anode is extracted via matching the experimental turn-off waveforms and the static performance with Medici simulator. © 1980-2012 IEEE.

Behavior of RC beams retrofitted with CARDIFRC after thermal cycling

This study investigates the effect of thermal cycling on the performance of concrete beams retrofitted with CARDIFRC, a new class of high performance fiber-reinforced cement-based material that is compatible with concrete. Twenty four beams were subjected to 24 h thermal cycles between 25 and 90°C. One third of the beams were reinforced either in flexure only or in flexure and shear with conventional steel reinforcement and used as control specimens. The remaining sixteen beams were retrofitted with CARDIFRC strips to provide external flexural and/or shear strengthening. All beams were exposed to a varied number of 24 h thermal cycles ranging from 0 to 90 and were tested in four-point bending at room temperature. The tests indicated that the retrofitted members were stronger and stiffer than control beams, and more importantly, that their failure initiated in flexure without any signs of interfacial delamination cracking. The results of these tests are presented and compared to analytical predictions. The predictions show good correlation with the experimental results. © 2010 ASCE.

Unified analytic model for current-voltage behavior in amorphous oxide semiconductor TFTs

We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of < 4%. © 1980-2012 IEEE.