Enhancement of Microwave Properties of Planar Filters and Antennas using Photonic Bandgap (PBG) Structures

In this thesis, we explore the design, computation, and experimental analysis of photonic crystals, with a special emphasis on structures and devices that make a connection with practically realizable systems. First, we analyze the propenies of photonic-crystal: periodic dielectric structures that have a band gap for propagation. The band gap of periodically loaded air column on a dielectric substrate is computed using Eigen solvers in a plane wave basis. Then this idea is extended to planar filters and antennas at microwave regime. The main objectives covered in this thesis are:• Computation of Band Gap origin in Photonic crystal with the abet of Maxwell's equation and Bloch-Floquet's theorem • Extension of Band Gap to Planar structures at microwave regime • Predict the dielectric constant - synthesized dieletric cmstant of the substrates when loaded with Photonic Band Gap (PBG) structures in a microstrip transmission line • Identify the resonant characteristic of the PBG cell and extract the equivalent circuit based on PBG cell and substrate parameters for microstrip transmission line • Miniaturize PBG as Defected Ground Structures (DGS) and use the property to be implemented in planar filters with microstrip transmission line • Extended the band stop effect of PBG / DGS to coplanar waveguide and asymmetric coplanar waveguide. • Formulate design equations for the PBG / DGS filters • Use these PBG / DGS ground plane as ground plane of microstrip antennas • Analysis of filters and antennas using FDID method

Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications

In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These copper delafossite materials were grown in thin film form by rf magnetron sputtering technique. In general copper delafossites exhibit good optical transparency. The conductivity of the CuYO2 could be improved by Ca doping or by oxygen intercalation by annealing the film in oxygen atmosphere. It has so far been impossible to improve the p-type conductivity of CuGaO2 significantly by doping Mg or Ca on the Ga site. The ptype conductivity is presumed to be due to oxygen doping or Cu Vacancies [6]. Reports in literature show, oxygen intercalation or divalent ion doping on Ga site is not possible for CuGaO2 thin films to improve the p-type conductivity. Sintered powder and crystals of CuFeO2 have been reported as the materials having the highest p-type conductivity [14, 15] among the copper and silver delafossites. However the CuFeO2 films are found to be less transparent in the visible region compared to CuGaO2. Hence in the present work, the solid solution between the CuGaO2 and CuFeO2 was effected by solid state reaction, varying the Fe content. The CuGa1-xFexO2 with Fe content, x=0.5 shows an increase in conductivity by two orders, compared to CuGaO2 but the transparency is only about 50% in the visible region which is less than that of CuGaO2 The synthesis of α−AgGaO2 was carried out by two step process which involves the synthesis of β-AgGaO2 by ion exchange reaction followed by the hydrothermal conversion of the β-AgGaO2 into α-AgGaO2. The trace amount of Ag has been reduced substantially in the two step synthesis compared to the direct hydrothermal synthesis. Thin films of α-AgGaO2 were prepared on silicon and Al2O3 substrates by pulsed laser deposition. These studies indicate the possibility of using this material as p-type material in thin film form for transparent electronics. The room temperature conductivity of α-AgGaO2 was measured as 3.17 x 10-4 Scm-1and the optical band gap was estimated as 4.12 eV. A transparent p-n junction thin film diode on glass substrate was fabricated using p-type α-AgGaO2 and n-ZnO.AgCoO2 thin films with 50% transparency in the visible region were deposited on single crystalline Al2O3 and amorphous silica substrates by RF magnetron sputtering and p type conductivity of AgCoO2 was demonstrated by fabricating transparent p-n junction diode with AgCoO2 as p-side and ZnO: Al as n-side using sputtering. The junction thus obtained was found to be rectifying with a forward to reverse current of about 10 at an applied voltage of 3 V.The present study shows that silver delafossite thin films with p-type conductivity can be used for the fabrication of active devices for transparent electronics applications.

Investigations on the mechanism of carrier transport in plasma polymerized pyrrole thin films

Plasma polymerization is found to be an excellent technique for the preparation of good quality, pinhole-free, polymer thin films from different monomer precursors. The present work describes the preparation and characterization of polypyrrole (PPy) thin films by ac plasma polymerization technique in their pristine and in situ iodine doped forms. The electrical conductivity studies of the aluminiumpolymeraluminium (AlpolymerAl) structures have been carried out and a space charge limited conduction (SCLC) mechanism is identified as the most probable mechanism of carrier transport in these polymer films. The electrical conductivity shows an enhanced value in the iodine doped sample. The reduction of optical band gap by iodine doping is correlated with the observed conductivity results.

Evidence for blueshift by weak exciton confinement and tuning of bandgap in superparamagnetic nanocomposites

Superparamagnetic nanocomposites based on Y-Fe2O3 and sulphonated polystyrene were synthesised by ion-exchange process and the structural characterisation has been carried out using X-ray diffraction technique. Doping of cobalt in to the Y-Fe2O3 lattice was effected in situ and the doping was varied in the atomic percentage range 1–10. The optical absorption studies show a band gap of 2.84 eV, which is blue shifted by 0.64 eV when compared to the reported values for the bulk samples (2.2 eV). This is explained on the basis of weak quantum confinement. Further size reduction can result in a strong confinement, which can yield transparent magnetic nanocomposites because of further blue shifting. The band gap gets red shifted further with the addition of cobalt in the lattice and this red shift increases with the increase in doping. The observed red shift can be attributed to the strain in the lattice caused by the anisotropy induced by the addition of cobalt. Thus, tuning of bandgap and blue shifting is aided by weak exciton confinement and further red shifting of the bandgap is assisted by cobalt doping.

Electronic structure and magnetic interactions of the spin-chain compounds Ca2CuO3 and Sr2CuO3

The results are presented of a combined periodic and cluster model approach to the electronic structure and magnetic interactions in the spin-chain compounds Ca2CuO3 and Sr2CuO3. An extended t-J model is presented that includes in-chain and interchain hopping and magnetic interaction processes with parameters extracted from ab initio calculations. For both compounds, the in-chain magnetic interaction is found to be around -240 meV, larger than in any of the other cuprates reported in the literature. The interchain magnetic coupling is found to be weakly antiferromagnetic, -1 meV. The effective in-chain hopping parameters are estimated to be ~650 meV for both compounds, whereas the value of the interchain hopping parameter is 30 meV for Sr2CuO3 and 40 meV for Ca2CuO3, in line with the larger interchain distance in the former compound. These effective parameters are shown to be consistent with expressions recently suggested for the Néel temperature and the magnetic moments, and with relations that emerge from the t-J model Hamiltonian. Next, we investigate the physical nature of the band gap. Periodic calculations indicate that an interpretation in terms of a charge-transfer insulator is the most appropriate one, in contrast to the suggestion of a covalent correlated insulator recently reported in the literature.

Electronic and magnetic structure of LaMnO3 from hybrid periodic density-functional theory

The electronic and magnetic structures of the LaMnO3 compound have been studied by means of periodic calculations within the framework of spin polarized hybrid density-functional theory. In order to quantify the role of approximations to electronic exchange and correlation three different hybrid functionals have been used which mix nonlocal Fock and local Dirac-Slater exchange. Periodic Hartree-Fock results are also reported for comparative purposes. The A-antiferromagnetic ground state is properly predicted by all methods including Hartree-Fock exchange. In general, the different hybrid methods provide a rather accurate description of the band gap and of the two magnetic coupling constants, strongly suggesting that the corresponding description of the electronic structure is also accurate. An important conclusion emerging from this study is that the nature of the occupied states near the Fermi level is intermediate between the Hartree-Fock and local density approximation descriptions with a comparable participation of both Mn and O states.

Ab initio study of MF2 (M=Mn, Fe, Co, Ni) rutile-type compounds using the periodic unrestricted Hartree-Fock approach

The ab initio periodic unrestricted Hartree-Fock method has been applied in the investigation of the ground-state structural, electronic, and magnetic properties of the rutile-type compounds MF2 (M=Mn, Fe, Co, and Ni). All electron Gaussian basis sets have been used. The systems turn out to be large band-gap antiferromagnetic insulators; the optimized geometrical parameters are in good agreement with experiment. The calculated most stable electronic state shows an antiferromagnetic order in agreement with that resulting from neutron scattering experiments. The magnetic coupling constants between nearest-neighbor magnetic ions along the [001], [111], and [100] (or [010]) directions have been calculated using several supercells. The resulting ab initio magnetic coupling constants are reasonably satisfactory when compared with available experimental data. The importance of the Jahn-Teller effect in FeF2 and CoF2 is also discussed.

Non-destructive evaluation of photovoltaic materials and solar cells using Photoluminescence

Photoluminescence (PL) spectroscopy is an optical technique that has emerged successful in the field of semiconductor material and device characterization. This technique is quite a powerful one which gives idea about the defect levels in a material, the band gap of the material, composition as well as material quality. Over the recent years it has received an elevation as a mainstream characterization technique. This thesis is an attempt to characterize each individual layer used in a thin film solar cell with special focus on the electrical properties. This will be highly beneficial from the lab as well as industrial point of view because electrical measurements generally are contact mode measurements which tend to damage the surface. As far as a thin film solar cell is concerned, the constituent layers are the transparent conducting oxide (TCO), absorber layer, buffer layer and top electrode contact. Each layer has a specific role to play and the performance of a solar cell is decided and limited by the quality of each individual layer. Various aspects of PL spectroscopy have been employed for studying compound semiconductor thin films [deposited using chemical spray pyrolysis (CSP)] proposed for solar cell application. This thesis has been structured in to seven chapters

Development of p-type transparent semiconducting oxides for thin film transistor applications

Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One of the relevant fields of current interest in material science is the fundamental aspects and applications of semi- conducting transparent thin films. Transparent conductors show the properties of transparency and conductivity simultaneously. As far as the band structure is concerned, the combination of the these two properties in the same material is contradictory. Generally a trans- parent material is an insulator having completely filled valence and empty conduction bands. Metallic conductivity come out when the Fermi level lies within a band with a large density of states to provide high carrier concentration. Effective transparent conductors must nec- essarily represent a compromise between a better transmission within the visible spectral range and a controlled but useful electrical con- ductivity [1–6]. Generally oxides like In2O3, SnO2, ZnO, CdO etc, show such a combination. These materials without any doping are insulators with optical band gap of about 3 eV. To become a trans- parent conductor, these materials must be degenerately doped to lift the Fermi level up into the conduction band. Degenerate doping pro- vides high mobility of extra carriers and low optical absorption. The increase in conductivity involves an increase in either carrier concen- tration or mobility. Increase in carrier concentration will enhance the absorption in the visible region while increase in mobility has no re- verse effect on optical properties. Therefore the focus of research for new transparent conducting oxide (TCO) materials is on developing materials with higher carrier mobilities.

On the optical and electrical properties of rf and a.c. plasma polymerized aniline thin films

Polyaniline is a widely studied conducting polymer and is a useful material in its bulk and thin film form for many applications, because of its excellent optical and electrical properties. Pristine and iodine doped polyaniline thin films were prepared by a.c. and rf plasma polymerization techniques separately for the comparison of their optical and electrical properties. Doping of iodine was effected in situ. The structural properties of these films were evaluated by FTIR spectroscopy and the optical band gap was estimated from UV-vis-NIR measurements. Comparative studies on the structural, optical and electrical properties of a.c. and rf polymerization are presented here. It has been found that the optical band gap of the polyaniline thin films prepared by rf and a.c. plasma polymerization techniques differ considerably and the band gap is further reduced by in situ doping of iodine. The electrical conductivity measurements on these films show a higher value of electrical conductivity in the case of rf plasma polymerized thin films when compared to the a.c. plasma polymerized films. Also, it is found that the iodine doping enhanced conductivity of the polymer thin films considerably. The results are compared and correlated and have been explained with respect to the different structures adopted under these two preparation techniques

Enhanced UV emission from ZnO nanoflowers synthesized by the hydrothermal process

ZnO nanoflowers were synthesized by the hydrothermal process at an optimized growth temperature of 200 ◦C and a growth/reaction time of 3 h. As-prepared ZnO nanoflowers were characterized by x-ray diffraction, scanning electron microscopy, UV–visible and Raman spectroscopy. X-ray diffraction and Raman studies reveal that the as-synthesized flower-like ZnO nanostructures are highly crystalline with a hexagonal wurtzite phase preferentially oriented along the (1 0 1 1) plane. The average length (234–347 nm) and diameter (77–106 nm) of the nanorods constituting the flower-like structure are estimated using scanning electron microscopy studies. The band gap of ZnO nanoflowers is estimated as 3.23 eV, the lowering of band gap is attributed to the flower-like surface morphology and microstructure of ZnO. Room temperature photoluminescence spectrum shows a strong UV emission peak at 392 nm, with a suppressed visible emission related to the defect states, indicating the defect free formation of ZnO nanoflowers that can be potentially used for UV light-emitting devices. The suppressed Raman bands at 541 and 583 cm−1 related to defect states in ZnO confirms that the ZnO nanoflowers here obtained have a reduced presence of defects

Role of chlorine on the opto-electronic properties of β-In2S3 thin films

Effect of chlorine doping on the opto-electronic properties of β-In2S3 thin film, deposited by spray pyrolysis technique is studied for the first time. Chlorine was incorporated in the spray solution, using HCl. Pristine sample prepared using In(NO3)3 and thiourea as the precursors showed very low photosensitivity. But upon adding optimum quantity of chlorine, the photosensitivity increased by 3 orders. X-ray analysis revealed that crystallinity was also increasing up to this optimum level of Cl concentration. It was also observed that samples with high photosensitivity were having higher band gap. The present study proved that doping with chlorine was beneficial as this could result in forming crystalline and photosensitive films of indium sulfide.

Mikromechanisch durchstimmbare, dielektrische Fabry-Pérot-Filter im nahen Infrarot-Bereich: Konzept, Herstellung und Charakterisierung

Das Ziel der vorliegenden Arbeit war die Herstellung und Charakterisierung mikromechanisch durchstimmbarer, dielektrischer Fabry-Pérot-Filter im nahen Infrarot-Bereich bei einer Zentralwellenlänge von λc = 950 nm. Diese Bauelemente wurden auf Basis kostengünstiger Technologien realisiert, dank deren Entwicklung extreme Miniaturisierung und gleichzeitig hohe spektrale Anforderungen möglich sind. Der Vorteil solcher Filter liegt darin, dass sie direkt in einen Photodetektor integriert werden können und mit ganz wenigen Komponenten zu einem kompakten Spektrometermodul zusammengesetzt werden können. Die Baugröße ist nur durch die Größe des Photodetektors limitiert und die gesamte Intensität des einfallenden Lichts kann vorteilhaft auf eine einzelne Filtermembran des Fabry-Pérot-Filters fokussiert werden. Für den Filteraufbau werden zwei hochreflektierende, dielektrische DBR-Spiegel, ein organisches Opferschichtmaterial, welches zur Erzeugung einer Luftkavität im Filter dient, und zwei unterschiedliche Elektroden aus ITO und Aluminium verwendet. Die mikromechanische Auslenkung der freigelegten Filtermembran geschieht mittels elektrostatischer Aktuation, wobei auf diese Weise die Kavitätshöhe des Fabry-Pérot-Filters geändert wird und somit dieser im erforderlichen Spektralbereich optisch durchgestimmt wird. Das in dieser Arbeit gewählte Filterkonzept stellt eine Weiterentwicklung eines bereits bestehenden Filterkonzepts für den sichtbaren Spektralbereich dar. Zum Einen wurden in dieser Arbeit das vertikale und das laterale Design der Filterstrukturen geändert. Eine entscheidende Änderung lag im mikromechanisch beweglichen Teil des Fabry-Pérot-Filters. Dieser schließt den oberen DBR-Spiegel und ein aus dielektrischen Schichten und der oberen Aluminium-Elektrode bestehendes Membranhaltesystem ein, welches später durch Entfernung der Opferschicht freigelegt wird. Die Fläche des DBR-Spiegels wurde auf die Fläche der Filtermembran reduziert und auf dem Membranhaltesystem positioniert. Zum Anderen wurde im Rahmen dieser Arbeit der vertikale Schichtaufbau des Membranhaltesystems variiert und der Einfluss der gewählten Materialien auf die Krümmung der freistehenden Filterstrukturen, auf das Aktuationsverhalten und auf die spektralen Eigenschaften des gesamten Filters untersucht. Der Einfluss der mechanischen Eigenschaften dieser Materialien spielt nämlich eine bedeutende Rolle bei der Erhaltung der erforderlichen optischen Eigenschaften des gesamten Filters. Bevor Fabry-Pérot-Filter ausgeführt wurden, wurde die mechanische Spannung in den einzelnen Materialien des Membranhaltesystems bestimmt. Für die Messung wurde Substratkrümmungsmethode angewendet. Es wurde gezeigt, dass die Plasmaanregungsfrequenzen der plasmaunterstützten chemischen Gasphasenabscheidung bei einer Prozesstemperatur von 120 °C die mechanische Spannung von Si3N4 enorm beeinflussen. Diese Ergebnisse wurden im Membranhaltesystem umgesetzt, wobei verschiedene Filter mit unterschiedlichen mechanischen Eigenschaften des Membranhaltesystems gezeigt wurden. Darüber hinaus wurden optische Eigenschaften der Filter unter dem Einfluss des lateralen Designs der Filterstrukturen untersucht. Bei den realisierten Filtern wurden ein optischer Durchstimmbereich von ca. 70 nm und eine spektrale Auflösung von 5 nm erreicht. Die erreichte Intensität der Transmissionslinie liegt bei 45-60%. Diese Parameter haben für den späteren spektroskopischen Einsatz der realisierten Fabry-Pérot-Filter eine hohe Bedeutung. Die Anwendung soll erstmalig in einem „Proof of Concept“ stattfinden, wobei damit die Oberflächentemperatur eines GaAs-Wafers über die Messung der spektralen Lage seiner Bandlücke bestimmt werden kann.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.

Structure determination, magnetic and optical properties of a new chromium(II) thioantimonate, [Cr((NH2CH2CH2)(3)N)]Sb4S7

The chromium(II) antimony(III) sulphicle, [Cr((NH2CH2CH2)(3)N)]Sb4S7, was synthesised under solvothermal conditions from the reaction of Sb2S3. Cr and S dissolved in tris(2-aminoethyl)amine (tren) at 438 K. The products were characterised by single-crystal X-ray diffraction. elemental analysis, SQUID magnetometry and diffuse reflectance spectroscopy. The compound crystallises in the monoclinic space group P2(1)/n with a = 7.9756(7), b = 10.5191(9), c = 25.880(2) angstrom and beta = 90.864(5)degrees. Alternating SbS33- trigonal pyramids and Sb36 semi-cubes generate Sb4S72- chains which are directly bonded to Cr(tren pendant units. The effective magnetic moment of 4.94(6)mu(B) shows a negligible orbital contribution, in agreement with expectations for Cr(II):d(4) in a (5)A ground state. The measured band gap of 2.14(3) eV is consistent with a correlation between optical band gap and framework density that is established from analysis of a wide range of antimony sulphides. (C) 2007 Elsevier Ltd. All rights reserved.