Theoretical simulation studies of pulsed field magnetisation of (RE)BCO bulk superconductors

The magnetisation of bulk high temperature superconductors (HTS), such as RE-Ba-Cu-O [(RE)BCO, where RE is a rare earth element or Y], by a practical technique is essential for their application in high field, permanent magnet-like devices. Research to-date into the pulsed field magnetisation (PFM) of these materials, however, has been limited generally to experimental techniques, with relatively little progress in the development of theoretical models. This is because not only is a multi-physics approach needed to take account of the heating of the samples but also the high electric fields generated are well above the regime in which there are reliable experimental results. This paper describes a framework of theoretical simulation using the finite element method (FEM) that is applicable to both single- and multi-pulse magnetisation processes of (RE)BCO bulk superconductors. The model incorporates the heat equation and provides a convenient way of determining the distribution of trapped field, current density and temperature change within a bulk superconductor at each stage of the magnetisation process. An example of the single-pulse magnetisation of a (RE)BCO bulk is described. Potentially, the model may serve as a cost-effective tool for the optimisation of the bulk geometry and the magnetisation profile in multi-pulse magnetisation processes. © 2010 IOP Publishing Ltd.

Numerical Simulation of Transient Thermal Field in Laser Melting Process

Numerical simulation of thermal field was studied in laser processing. The 3-D finite element model of transient thermal calculation is given by thermal conductive equation. The effects of phase transformation latent are considered. Numerical example is given to verify the model. Finally the real example of transient thermal field is given.

Practical matching of principal stress field geometries in composite components

A simple composite design methodology has been developed from the basic principles of composite component failure. This design approach applies the principles of stress field matching to develop suitable reinforcement patterns around three-dimensional details such as lugs in mechanical components. The resulting patterns are essentially curvilinear orthogonal meshes, adjusted to meet the restrictions imposed by geometric restraints and the intended manufacturing process. Whilst the principles behind the design methodology can be applied to components produced by differing manufacturing processes, the results found from looking at simple generic example problems suggest a realistic and practical generic manufacturing approach. The underlying principles of the design methodology are described and simple analyses are used to help illustrate both the methodology and how such components behave. These analyses suggest it is possible to replace high-strength steel lugs with composite components whose strength-to-weight ratio is some 4-5 times better. © 1998 Elsevier Science Ltd. All rights reserved.

Relation between Stabilization Energy, Crystal Field Coefficient and the Magnetic Exchange Interaction for Tb3+ Ion

Based on a single ion model, Hamiltonian of the simplest form about magnetocrystalline anisotropy for Tb3+ ion was solved by using the numerical method. The relation between the stabilization energy, crystal field coefficient B-2(0) and the magnetic exchange interaction was studied as temperature approaches to 0 K. The results show that the stabilization energy contributed by Tb3+ is linear with crystal field coefficient B-2(0) approximately, but it is insensitive to the change of magnetic exchange interaction for the strong magnetic substances such as TbCo5, Tb2Co17 and Tb2Fe14B compounds.

Mode I crack tip field with strain gradient effects

A plane strain mode I crack tip field with strain gradient effects is investigated. A new strain gradient theory is used. An elastic-power law hardening strain gradient material is considered and two hardening laws, i.e. a separation law and an integration Law are used respectively. As for the material with the separation law hardening, the angular distributions of stresses are consistent with the HRR field, which differs from the stress results([19]); the angular distributions of couple stresses are the same as the couple stress results([19]). For the material with the integration law hardening, the stress field and the couple stress field can not exist simultaneously, which is the same as the conclusion([19]), but for the stress dominated field, the angular distributions of stresses are consistent with the HRR field; for the couple stress dominated field, the angular distributions of couple stresses are consistent with those in Ref. [19]. However, the increase in stresses is not observed in strain gradient plasticity because the present theory is based on the rotation gradient of the deformation only, while the crack tip field of mode I is dominated by the tension gradient, which will be shown in another paper.

Field of view expansion for 3-D holographic display using a single spatial light modulator with scanning reconstruction light

Increasing the field of view of a holographic display while maintaining adequate image size is a difficult task. To address this problem, we designed a system that tessellates several sub-holograms into one large hologram at the output. The sub-holograms we generate is similar to a kinoform but without the paraxial approximation during computation. The sub-holograms are loaded onto a single spatial light modulator consecutively and relayed to the appropriate position at the output through a combination of optics and scanning reconstruction light. We will review the method of computer generated hologram and describe the working principles of our system. Results from our proof-of-concept system are shown to have an improved field of view and reconstructed image size. ©2009 IEEE.

Singularity of Stress Field Around Interface Crack Between Viscoelastic Bodies

研究两半无限大黏弹性体间Griffith界面裂纹在简谐载荷作用下裂纹尖端动应力场的奇异特性.通过引入裂纹张开位移和裂纹位错密度函数,相应的混合边值问题归结为一组耦合的奇异积分方程.渐近分析表明裂尖动应力场的奇异特征完全包含在奇异积分方程的基本解中.通过对基本解的深入分析发现黏弹性材料界面裂纹裂尖动应力场具有与材料参数和外载荷频率相关的振荡奇异特性.以标准线性固体黏弹材料为例讨论了材料参数和载荷频率对奇性指数和振荡指数的影响.

Numerical simulation of temperature field evolution of metallic alloy surface due to pulsed laser treatment

This paper performed a numerical simulation on temperature field evolution for the surface layer of a metallic alloy subjected to pulsed Nd:YAG laser treatment. The enthalpy method was adopted to solve the moving boundary problem, I.e. Stefan problem. Computational results were obtained to show the temperature field evolution. Effects of latent heat and mushy zone width on the temperature field were investigated. The results also show very high values of temperature gradient and cooling rate, which are typical characteristics during the solidification process.

Plasma enhanced chemical vapour deposited carbon nanotubes for field emission applications

Plasma Enhanced Chemical Vapour Deposition is an extremely versatile technique for directly growing multiwalled carbon nanotubes onto various substrates. We will demonstrate the deposition of vertically aligned nanotube arrays, sparsely or densely populated nanotube forests, and precisely patterned arrays of nanotubes. The high-aspect ratio nanotubes (∼50 nm in diameter and 5 microns long) produced are metallic in nature and direct contact electrical measurements reveal that each nanotube has a current carrying capacity of 107-108 A/cm2, making them excellent candidates as field emission sources. We examined the field emission characteristics of dense nanotube forests as well as sparse nanotube forests and found that the sparse forests had significantly lower turn-on fields and higher emission currents. This is due to a reduction in the field enhancement of the nanotubes due to electric field shielding from adjacent nanotubes in the dense nanotube arrays. We thus fabricated a uniform array of single nanotubes to attempt to overcome these issues and will present the field emission characteristics of this.

Lateral field emitters fabricated using carbon nanotubes

We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices. © 2003 Elsevier Science B.V. All rights reserved.

Electrical and field emission investigation of individual carbon nanotubes from plasma enhanced chemical vapour deposition

Plasma enhanced chemical vapour deposition (PECVD) is a controlled technique for the production of vertically aligned multiwall carbon nanotubes for field emission applications. In this paper, we investigate the electrical properties of individual carbon nanotubes which is important for designing field emission devices. PECVD nanotubes exhibit a room temperature resistance of 1-10 kΩ/μm length (resistivity 10-6 to 10-5 Ω m) and have a maximum current carrying capability of 0.2-2 mA (current density 107-108 A/cm2). The field emission characteristics show that the field enhancement of the structures is strongly related to the geometry (height/radius) of the structures and maximum emission currents of ∼ 10 μA were obtained. The failure of nanotubes under field emission is also discussed. © 2002 Elsevier Science B.V. All rights reserved.

Fabrication of carbon nanotube lateral field emitters

We report on the fabrication and field emission of carbon nanotube lateral field emitters. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by plasma-enhanced chemical vapour deposition as cathodes, which makes the fabrication of cantilever type lateral field emitters possible. The emission characteristics show that the field emission initiates at 11-17 V. The device has high geometrical enhancement factors (9.3 × 106 cm-1) compared to standard Spindt tips, which may be due to increased field concentration at the nanotube tip and the close proximity of the anode (<1 μm). The relative ease of fabrication compared to vertical field emitters and enhanced field emission characteristics observed makes the carbon nanotube lateral field emitter a good candidate for future integrated nano-electronic devices.

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.

Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts

We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two ends of a single-wall CNT. We show that it is possible to tune the rectification current-voltage (I-V) characteristics of the CNT through the use of a back gate. In contrast to standard back gate field-effect transistors (FET) using same-metal source drain contacts, the asymmetrically contacted CNT operates as a directionally dependent CNT FET when gated. While measuring at source-drain reverse bias, the device displays semiconducting characteristics whereas at forward bias, the device is nonsemiconducting. © 2005 American Institute of Physics.