A Perspective on Computer Assisted Assessment Techniques for Short Free-Text Answers

Computer Assisted Assessment (CAA) has been existing for several years now. While some forms of CAA do not require sophisticated text understanding (e.g., multiple choice questions), there are also student answers that consist of free text and require analysis of text in the answer. Research towards the latter till date has concentrated on two main sub-tasks: (i) grading of essays, which is done mainly by checking the style, correctness of grammar, and coherence of the essay and (ii) assessment of short free-text answers. In this paper, we present a structured view of relevant research in automated assessment techniques for short free-text answers. We review papers spanning the last 15 years of research with emphasis on recent papers. Our main objectives are two folds. First we present the survey in a structured way by segregating information on dataset, problem formulation, techniques, and evaluation measures. Second we present a discussion on some of the potential future directions in this domain which we hope would be helpful for researchers.

Covalent Postassembly Modification and Water Adsorption of Pd3 Self-Assembled Trinuclear Barrels

Three new ditopic imidazole ligands (2-4) were synthesized in high yields and characterized by various spectroscopic techniques. These ligands resulted in the formation of 3 + 6] self-assembled trinuclear barrels (5-7) in quantitative yields by stoichiometric combination of individual ligands and Pd(NO3)(2) in DMSO. All the three assemblies (5-7) were characterized by `H NMR and ESI-MS analysis, and subsequently, structures of the complexes 5 and 6 were confirmed by single-crystal X-ray diffraction studies. Structure analysis reveals the presence of NO3- counter anions in the intermolecular channels/pockets, which could potentially act as H-bonding sites between adsorbed water molecules within the channels. In fact, both the assemblies (5 and 6) showed water uptake (136.58, and 123.78 cm(3) g(-1), respectively) at ambient temperature under maximum allowable humidity. In addition, free aldehyde group present in the bridging ligand in complex 7 provides reactive site for postassembly modification. Herein, Knoevenagel condensation with Meldrum's acid was utilized under mild conditions by targeting aldehyde group appended in prefabricated complex 7 and transformed into a different complex (8) with altered functional group. Such postassembly functionalization enables incorporation of a new functional group without disrupting the integrity of the trifacial structure.

Effect of W addition on the electrical switching of VO2 thin films

Vanadium Oxide has been a frontrunner in the field of oxide electronics because of its metal-insulator transition (MIT). The interplay of different structures of VO2 has played a crucial role in deciding the magnitude of the first order MIT. Substitution doping has been found to introduce different polymorphs of VO2. Hence the role of substitution doping in stabilizing the competing phases of VO2 in the thin film form remains underexplored. Consequently there have been reports both discounting and approving such a stabilization of competing phases in VO2. It is reported in the literature that the bandwidth of the hysteresis and transition temperature of VO2 can be tuned by substitutional doping of VO2 with W. In this work, we have adopted a novel technique called, Ultrasonic Nebulized Spray Pyrolysis of Aqueous Combustion Mixture (UNSPACM) to deposit VO2 and W- doped VO2 as thin films. XRD and Raman spectroscopy were used to investigate the role of tungsten on the structure of VO2 thin films. Morphology of the thin films was found to be consisting of globular and porous nanoparticles of size similar to 20nm. Transition temperature decreased with the addition of W. We found that for 2.0 at % W doping in VO2, the transition temperature has reduced from 68 degrees C to 25 degrees C. It is noted that W-doping in the process of reducing the transition temperature, alters the local structure and also increases room temperature carrier concentration. (c) 2016 Author(s).

Low temperature solution processed high-kappa ZrO2 gate dielectrics for nanoelectonics

The high-kappa gate dielectrics, specifically amorphous films offer salient features such as exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, similar to 35 nm thick amorphous ZrO2 films were deposited on silicon substrate at low temperature (300 degrees C, 1 h) from facile spin-coating method and characterized by various analytical techniques. The X-ray diffraction and X-ray photoelectron spectroscopy reveal the formation of amorphous phase ZrO2, while ellipsometry analysis together with the Atomic Force Microscope suggest the formation of dense film with surface roughness of 1.5 angstrom, respectively. The fabricated films were integrated in metal-oxide-semiconductor (MOS) structures to check the electrical capabilities. The oxide capacitance (C-ox), flat band capacitance (C-FB), flat band voltage (V-FB), dielectric constant (kappa) and oxide trapped charges (Q(ot)) extracted from high frequency (1 MHz) C-V curve are 186 pF, 104 pF, 0.37V, 15 and 2 x 10(-11) C, respectively. The small flat band voltage 0.37V, narrow hysteresis and very little frequency dispersion between 10 kHz-1 MHz suggest an excellent a-ZrO2/Si interface with very less trapped charges in the oxide. The films exhibit a low leakage current density 4.7 x 10(-9)A/cm(2) at 1V. In addition, the charge transport mechanism across the MOSC is analyzed and found to have a strong bias dependence. The space charge limited conduction mechanism is dominant in the high electric field region (1.3-5 V) due to the presence of traps, while the trap-supported tunneling is prevailed in the intermediate region (0.35-1.3 V). Low temperature solution processed ZrO2 thin films obtained are of high quality and find their importance as a potential dielectric layer on Si and polymer based flexible electronics. (C) 2016 Published by Elsevier B.V.

Nano-hardness Techniques and Its Applications in Mechanical Property Measurements for Surface Engineering

结合纳米硬度技术测量各类薄膜和块体材料表层的纳米压痕硬度、弹性模量、断裂韧性、膜厚、微结构的弯曲变形,采用纳米划痕硬度技术测量各类薄膜和块体材料的粗糙度、临界附着力、摩擦系数、划痕横剖面.纳米硬度计是检测材料表层微米乃至几十纳米力学性能的先进仪器,可广泛应用于表面工程中的质量检测.

Metallographic Analysis of Cu-Zr-Al Bulk Amorphous Alloys with Yttrium Addition

Minor yttrium addition can improve the glass-forming ability of Cu-Zr-Al ternary alloys via suppression of the growth of eutectic clusters. Yttrium addition also makes the room temperature ductility of the alloys decrease, and both the compressive strength and elastic strain limits increase slightly.

Evaluation of manufacturing techniques for a minifluidics demonstrator system

A multi-disciplinary team based at Heriot-Watt University and other Universities has been set up to tackle the design and manufacturing of lab-on-a-chip for industries as one of the demonstrators of the EPSRC Grand Challenge project "3D-Mintegration". The team focuses on the analysis of foetal genetic material extracted from maternal blood as a smart alternative to invasive prenatal testing such as amniocentesis. The first module of the microsystem envisaged achieves a separation of blood cells from plasma. This system permits the testing of different manufacturing techniques.

Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs

An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes' blocking mode behaviour.

Fixed-lag blind equalization and sequence estimation in digital communications systems using sequential importance sampling

We present methods for fixed-lag smoothing using Sequential Importance sampling (SIS) on a discrete non-linear, non-Gaussian state space system with unknown parameters. Our particular application is in the field of digital communication systems. Each input data point is taken from a finite set of symbols. We represent transmission media as a fixed filter with a finite impulse response (FIR), hence a discrete state-space system is formed. Conventional Markov chain Monte Carlo (MCMC) techniques such as the Gibbs sampler are unsuitable for this task because they can only perform processing on a batch of data. Data arrives sequentially, so it would seem sensible to process it in this way. In addition, many communication systems are interactive, so there is a maximum level of latency that can be tolerated before a symbol is decoded. We will demonstrate this method by simulation and compare its performance to existing techniques.

Addition of ferromagnetic CoFe2O4 to YBCO thin films for enhanced flux pinning

An attempt has been made to prepare a YBa2Cu3O 7-δ (YBCO) thin film doped with ferromagnetic CoFe 2O4. Transmission electron microscopy of the resultant samples shows, however, that Y(Fe, Co)O3 forms as a nanoparticulate dispersion throughout the film in preference to CoFe2O4, leaving the YBCO yttrium deficient. As a consequence, the superconducting properties of the sample are poor, with a self-field critical current density of just 0.25 MA cm-2. Magnetic measurements indicate however that the Y(Fe, Co)O3 content, together with any other residual phases, is also ferromagnetic, and some interesting features are present in the in-field critical current behaviour, including a reduced dependence on applied field and a strong c-axis peak in the angular dependence. The work points the way towards future attempts utilising YFeO3 as an effective ferromagnetic pinning additive for YBCO. © 2009 Elsevier B.V. All rights reserved.