Effects of 2,3,7,8-TCDD and benzo[a]pyrene on modulating vitellogenin expression in primary culture of crucian carp (Carassius auratus) hepatocytes

Vitellogenin (Vtg) is the precursor of yolk protein. Its expression and secretion are estrogen-regulated and are crucial for oocyte maturation. An in vitro xenoestrogen screening model was established by measuring Vtg induction in cultured primary hepatocytes from crucian carp. Vtg production was detected by biotin-avidin sandwich ELISA method while Vtg and cytochrome P4501A1 (CYP1A1) mRNA induction were measured by semi- quantitative PCR-primer dropping technique. Vtg and Vtg mRNA were dose-dependently induced by diethylstilbestrol (DES, 0.2-200 ng/mL) in hepatocytes of crucian carp. Co-treatment of the DES-induced hepatocytes with either 2,3,7,8-TCDD (TCDD, 0.1-4 pg/mL) or benzo[a]pyrene (B[a]P, 5-1000 ng/mL) resulted in a reduction of Vtg production and an increment of CYP1A1 mRNA expression both in a dose dependent manner, indicating the anti-estrogenic effects of the compounds. However, at lower tested concentrations, TCDD (0.1, 0.2 pg/mL), B[a]P (5 ng/mL) seemed to have a potentiating effect on Vtg expression and secretion, although by their own these compounds had no observable estrogenic effect on Vtg induction. Tamoxifen (a selective estrogen receptor modulators, 1 nmol/L-1 mumol/L), and P-naphtho-flavone (beta-NF, an aryl hydrocarbon receptor inducing compounds, 2.5-1000 ng/mL) also were employed to study the possible interactions in DES-induced Vtg expression. In co-treatment of the DES-induced hepatocytes with beta-NF or tamoxifen, the decrease in Vtg production did parallel induction of CYP1A1 for beta-NF, but tamoxifen inhibited Vtg induction did not parallel induced CYP1A1 expression in all test concentrations. On the contrary, it was found that in co-treatment of the TCDD-induced hepatocytes with DES, TCDD induced CYP1A1 mRNA production was inhibited by DES also. These results implicated a possible cross talk between estrogen receptor- and aryl hydrocarbon receptor-mediated pathways in the hepatocytes.

Preliminary study on the photoproduction of hydroxyl radicals in aqueous solution with Aldrich humic acid, algae and Fe(III) under high-pressure mercury lamp irradiation

Under a high-pressure mercury lamp (HPML) and using an exposure time of 4 h, the photoproduction of hydroxyl radicals ((OH)-O-.) could be induced in an aqueous solution containing humic acid (HA). Hydroxyl radicals were determined by high-performance liquid chromatography using benzene as a probe. The results showed that (OH)-O-. photoproduction increased from 1.80 to 2.74 muM by increasing the HA concentration from 10 to 40 mg L-1 at an exposure time of 4 h (pH 6.5). Hydroxyl radical photoproduction in aqueous solutions of HA containing algae was greater than that in the aqueous solutions of HA without algae. The photoproduction of (OH)-O-. in the HA solution with Fe(111) was greater than that of the solution without Fe(III) at pH ranging from 4.0 to 8.0. The photoproduction of (OH)-O-. in HA solution with algae with or without Fe(111) under a 250 W HPML was greater than that under a 125 W HPML. The photoproduction of (OH)-O-. in irradiated samples was influenced by the pH. The results showed that HPML exposure for 4 h in the 4-8 pH range led to the highest (OH)-O-. photoproduction at pH 4.0.

Long-term toxic impact of 2,3,7,8-tetrachlorodibenzo-p-dioxin on the reproduction, sexual differentiation, and development of different life stages of Gobiocypris rarus and Daphnia magna

The sexual ratio of Gobiocypris rarus exposed to 2,3,7,8-tetrachlorodibenzo-p-dioxin (TCDD) and 17 beta -estradiol from embryo to sexually mature revealed feminization and overdevelopment of connective tissue in male fish gonad in 2-30 pg/L TCDD concentration range. Daphnia magna was not sensitive to the high dose of TCDD (0.1-1000 ng/ml), but the reproduction of D. magna treated with TCDD decreased after the 8th day. 7-Ethoxyresorufin-O-deethylase (EROD) activities in newly fertilized eggs of G. rarus exposed to TCDD dosage groups (1000-100,000 pg/L) were significantly induced and increased with TCDD concentrations at the early life stage, while no difference was found between low TCDD dosage groups (<100 pg/L), but a good relationship between the EROD activity and the TCDD concentration was observed during a long-term developmental stage. There was a pericardial edema formed in a 2-week yolk-sac at the concentration of 1000 pg/L TCDD. But in the exposure group (2 pg/L TCDD for 120 days), the cell nuclei of hepatocytes was far from the center and packed toward the cell membrane; the cristae of most mitochondria in the cell dropped and collapsed; the rough endoplasmic reticulum broke into fragments; and numerous lipid droplets formed in the cell. (C) 2001 Academic Press.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

Thermodynamic properties of Cu-3(CO3)(2)(OH)(2) and the spin-1/2 distorted diamond Heisenberg chain

The thermodynamic properties of the spin-1/2 diamond quantum Heisenberg chain model have been investigated by means of the transfer matrix renormalization group (TMRG) method. Considering different crystal structures, by changing the interactions among different spins and the external magnetic fields, we first investigate the magnetic susceptibility, magnetization, and specific heat of the distorted diamond chain as a model of ferrimagnetic spin systems. The susceptibility and the specific heat show different features for different ferromagnetic (F) and antiferromagnetic (AF) interactions and different magnetic fields. A 1/3 magnetization plateau is observed at low temperature in a magnetization curve. Then, we discuss the theoretical mechanism of the double-peak structure of the magnetic susceptibility and the three-peak structure of the specific heat of the compound Cu-3(CO3)(2)(OH)(2), on which an elegant measurement was performed by Kikuchi [Phys. Rev. Lett. 94, 227201 (2005)]. Our computed results are consistent with the main characteristics of the experimental data. Meanwhile, we find that the double-peak structure of susceptibility can be found in several different kinds of spin interactions in the diamond chain. Moreover, a three-peak behavior is observed in the TMRG results of magnetic susceptibility. In addition, we perform calculations relevant for some experiments and explain the characteristics of these materials. (c) 2007 American Institute of Physics.

High-power operation of uncoated strain-compensated quantum cascade lasers at 4.8 mu m

High-power operation of uncoated 22-mu m-wide quantum cascade lasers (QCLs) emitting at lambda approximate to 4.8 mu m is reported. The emitting region of the QCL structure consists of a 30-period strain-compensated In0.68Ga0.32As/In0.37Al0.63As superlattice. For a 4-mm-long laser in pulsed mode, a peak output power is achieved in excess of 2240mW per facet at 81K with a threshold current density of 0.64kA/cm(2). The effects of varying the cavity lengths from 1 to 4mm on the performances of the QCLs are analysed in detail and the low waveguide loss of only about 1.4 cm(-1) is extracted.

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

8 mu m strain-compensated quantum cascade laser operating at room temperature

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors

High-quality InAsxSb1-x (0 < x <= 0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2x10(4) cm(2) V-1 s(-1) and cutoff wavelengths longer than 10 mu m at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8 mu m are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13 mu m with a maximum responsivity of 0.26 V/W is obtained at RT. Hence, the InAsxSb1-x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors. (c) 2006 American Institute of Physics.

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-mu m gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Omega/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at V-gs=0.5 V and V-ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f(T)) and a 28-GHz maximum oscillation frequency (f(max)) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.

Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Normal-incident infrared absorption in the 8-12-mu m-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 mu m is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. (C) 1998 American Institute of Physics. [S0003-6951(98)01151-6].

An 8-b 1-GSmaples/s CMOS cascaded folding and interpolating ADC

This paper presents an 8-bit low power cascaded folding and interpolating analog-to-digital converter (ADC). A reduction in the number of comparators, equal to the number of times the signal is folded, is obtained. The interleaved architecture is used to improve the sampling rate of the ADC. The circuit including a bandgap is implemented in a 0.18-mu m CMOS technology, and measures 1.47 mm X 1.47 mm (including pads). The simulation results illustrate a conversion rate of 1-GSamples/s and a power dissipation of less than 290mW.

波长8 μm 分布反馈量子级联激光器的研究

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替代燃料二甲醚的燃烧特性及其污染物甲醛的生成消耗机理研究

化石燃料的不可再生性决定了其不能长久为全球经济和科技的发展提供能源动力，从可持续发展和能源战略的角度考虑，能够替代石油及其衍生品的清洁替代燃料研究已经成为提高能源供应安全、改善环境污染问题、应对气候变化的重要措施，对替代燃料的研究和应用已经成为各方关注和开发的热点。 二甲醚(DME、CH3OCH3)是一种最简单的醚类，它不含C-C健，可以由天然气、煤、生物质燃料等大量制备，而且具有较高的辛烷值(55-60)，较低的碳氢化合物、CO排放，没有PM排放，因而被认为是一种非常有发展前景的发动机替代燃料，已经受到了广泛的关注。但是，在发动机燃用DME的实验研究表明，在其排气中有非常规污染物甲醛(HCHO)、乙醛(CH3CHO)，甲酸甲酯(HCOOCH3)等排放，这些有机污染物会对环境和人类健康产生严重的危害，在环保要求日益严格的趋势下，这就制约了二甲醚的规模化应用。因此，对二甲醚燃烧性能、氧化中间产物甲醛等的产生和排放机理、相关污染物抑制技术需要进行着重研究，这对二甲醚燃料规模化应用、相关二甲醚燃烧器设计、燃烧性能的优化以及污染物控制技术的研究等都有着重要的理论指导意义和参考价值。 为了充分理解二甲醚燃料的燃烧特性、非常规污染物甲醛的产生和消耗机理，本文以实验和二甲醚化学反应动力学机理为指导，对二甲醚预混燃烧的燃烧特性、相关污染物和甲醛产生和消耗的机理做了详细的研究；并针对二甲醚燃料的不同应用背景，对二甲醚燃料低温下的氧化和甲醛生成特性、DME与LPG掺混燃烧特性和甲醛生成消耗机理进行了深入的研究，具体工作有： 研究了二甲醚预混燃烧特性、火焰中甲醛等污染物的产生特性，建立了火焰中甲醛取样、测量的方法和实验平台。并对当量比和燃料流量对二甲醚预混燃烧的燃烧特性、甲醛生成特性影响进行了考察，实验结果表明二甲醚是一种优良的替代燃料，在二甲醚火焰中甲醛是其重要的中间产物，甲醛浓度分布与当量比和预混气流速密切相关。当量比一定时，随着预混气流速的增加，火焰中甲醛产生的范围变窄，且甲醛浓度峰值逐渐移向燃烧器出口，而甲醛产生的浓度峰值数值上相差不大，甲醛在形成峰值后被快速消耗，其浓度在0.1mm内下降到几乎为零；在二甲醚流量一定时，随着当量比的增加，火焰中产生了更多的甲醛，火焰中甲醛分布的范围也变宽，而且当量比越大，甲醛的消耗也变缓，在当量比为0.8时，甲醛浓度从峰值到被消耗距离变为2mm，远大于当量比0.6和0.7下0.1mm的消耗距离。 对二甲醚预混燃烧进行数值研究和化学动力反应机理分析后发现，在二甲醚燃烧中，二甲醚的氧化反应途径主要是通过脱氢生成CH3OCH2和在高温下的直接裂解反应而进行，其中脱氢反应是低温下二甲醚消耗的主要途径，而在高温反应阶段(T>1000K)，DME的直接裂解和燃料的脱氢反应共同起主导作用；非常规污染物甲醛通过DME脱氢产物CH3OCH2的裂解和外部氧化而生成，在高温时通过DME直接裂解后被氧化产生；甲醛的消耗反应则是通过与H、O、OH和CH3基的氧化反应而完成，其中与O、OH基的反应在燃烧中起主要作用。因此二甲醚燃烧中甲醛的抑制关键在燃烧中甲醛的消耗阶段，采取有效的技术措施，如优化燃烧器结构提高二甲醚燃烧室内的温度、在燃烧区保证充足的氧气供应等措施，加快甲醛的消耗速度以促进其被完全氧化，可以实现二甲醚燃烧中甲醛的零排放。 针对柴油发动机燃用DME燃料时，燃料在燃烧室停留时间过短，造成部分未燃二甲醚随尾气排放，对DME在低温下(<800K)的氧化特性和甲醛生成特性进行了实验研究。结果表明，二甲醚在200℃左右就开始发生氧化反应，在200~400℃温度范围内被氧化而生成大量中间产物甲醛，且在此温度范围内甲醛不易被氧化分解，而发动机尾气温度（一般在200~600℃之间）处于甲醛最易生成的范围，因此未燃二甲醚在尾气中发生低温氧化反应生成的甲醛，是发动机燃用DME而排放高浓度甲醛的重要来源。研究结论为柴油发动机燃用DME抑制非常规污染物甲醛的排放提供了新的参考。 DME作为替代燃料，部分替代及与其他石化系燃料掺混燃烧是目前的重要应用方向，对DME与LPG掺混燃烧特性和甲醛生成特性进行了实验研究，结果表明，在DME与LPG掺混燃烧中，固定当量比和燃料质量流量的条件下，两种燃料存在一个最佳掺混比，在此掺混比例下，混合燃料着火提前，燃料燃烧性能最佳；DME与LPG混合燃料中，二甲醚是燃烧中甲醛产生的主要来源，控制DME的完全氧化和燃烧是抑制DME与LPG掺混燃烧排放甲醛的主要途径，这为更好地应用DME与LPG混合燃料提供了参考。 能否清洁高效燃烧是决定替代燃料DME应用规模和途径中的关键任务，本文对DME燃烧特性、非常规污染物甲醛的生成排放特性、低温下DME的氧化特性、DME与LPG掺混燃烧特性的研究，从不用的应用方向和领域对DME清洁高效燃烧进行了探讨和研究，研究成果可以为清洁高效利用二甲醚、抑制甲醛排放，以及开发相关燃烧技术、燃烧器提供实验依据和理论指导。本文在DME燃烧特性和非常规污染物甲醛的产生与排放方面取得了具有创新性的研究结果。