Deep level transient spectroscopy studies of Er and Pr implanted GaN films

Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30min. The origins of the deep defect levels are discussed. After annealing at 900 degrees C for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.

Investigation on the nonlinear optical properties of the DCNP/PEK-c guest-host polymer films

The polyetherketone (PEK-c) guest-host polymer thin films doped with 3-(1,1-dicyanothenyl)-1-phenyl-4,5-dihydro-1H-pryazole (DCNP) were prepared. The polymer films were investigated with in situ second-harmonic generation (SHG) measurement. The corona poling temperature was optimized by the temperature dependence of the in situ SHG signal intensity under the poling electric field applying. The temporal and temperature stability of the second-order properties of the poled polymer film were measured by the in situ SHG signal intensity probing. The second-order NLO coefficient chi ((2))(33) = 32.65 pm/V at lambda = 1064 nm was determined by using the Makel fringe method after poling under the optimal poling condition. The dispersion of the NLO coefficient of the guest-host polymer system was determined by the measured value of chi ((2))(33) at 1064 nm and the two-level model.

Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si

Proton-implanted and annealed p-type Si wafers were investigated by using both transmission electron microscopy and spreading resistivity probe. The novel pn junction [Li et al., Mat. Res. Sec. Symp, Proc. 396 (1996) 745], as obtained by using n-type Si subjected to the process as this work, was not observed in the p-type Si wafers in this work. A drop of superficial resistivity in the sample was found and is explained by the proposed models interpreting the novel pn junction. (C) 2000 Elsevier Science B.V. All rights reserved.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

Structural and magnetic properties of hydrides R3Fe29-xVxHy (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

A systematic investigation of crystallographic and intrinsic magnetic properties of the hydrides R3Fe29 - xVxHy (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed in this work. The lattice constants a, b, and c and the unit cell volume of R3Fe29 - xVxHy decrease with increasing rare-earth atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Hydrogenation results in regular anisotropic expansions along the a-, b-, and c-axes in this series of hydrides. Abnormal crystallographic and magnetic properties of Ce3Fe27.5V1.5H6.5, like Ce3Fe27.5V1.5, suggest that the Ce ion is non-triply ionized. Hydrogenation leads to the increase in both Curie temperature for all the compounds and in the saturation magnetization at 4.2 K and RT for R3Fe29 - xVx with R = Y, Ce, Nd, Sm, Gd, and Dy, except for Tb. Hydrogenation also leads to a decrease in the anisotropy field at 4.2 K and RT for R3Fe29 - xVx with R = Y, Ce, Nd, Gd, Tb, and Dy, except for Sm. The Ce3Fe27.5V1.5 and Gd3Fe28.4V0.6 show the larger storage of hydrogen with y = 6.5 and 6.9 in these hydrides. (C) 1998 Elsevier Science B.V. All rights reserved.

DNA装配中的纠错

DNA装配问题是指把各个读出序列（reads）拼接成一条完整的DNA链，即确定原DNA链的核苷酸“A，T，C，G”的排列顺序。实验中，由于各种原因测出的读出片段序列与DNA链的实际结果会有误差，这些误差会影响到用于装配的算法的性能，因此需要对测出的读出序列进行纠错。现有的算法如： ECINDEL和SRCorr都能够对实验数据进行纠错。但是它们都是根据某个读出序列出现的次数来判断它的正确性。这类算法首先选择参数k和M，若读出序列所有长度为k的子串出现的次数均大于M次，则它为正确的读出序列，即确实为原DNA链的子串。同时，还可以利用这些长度为k的子串来对原来的读出序列片段进行纠错。 然而，在这些算法中，M的选择要么是一个固定值，要么是随机的，使得这些算法在纠错问题上的表现并不稳定。 本文我们计算长度为k的子串出现M次时，它的真阳性（确实为原DNA链的一部分）的概率以及假阳性和假阴性的概率。根据计算结果，我们可以选择一个最优的M值使得最后选取的子串的错误最少，即假阳性的子串与假阴性的子串的数量之和最少。我们在模拟数据和实际数据上进行了验证，与之前的纠错算法ECINDEL，SRCorr相比，我们的算法总的错误率降低了77.6％和65.1％。

有限构模器的扩展及其在形式化方法中的应用

规约在软件开发和验证中占有重要地位 .对于以一阶逻辑为基础的规约 ,可以利用有限模型构造技术对其执行并测试 .文中研究规约中某些特性的处理 ,包括存在量词以及二元关系的传递闭包 .对已有的一个构模工具进行扩充 ,发现了文献中的若干错误

对"两类强壮的门限密钥托管方案"的分析

论文对两类"强壮"的门限密钥托管方案进行了系统分析,给出多种切实可行的攻击方法,指出它们都是不安全的.首先, 主要利用"可信度"函数等方法首次奠定了对密钥托管协议的形式化分析基础.然后提出了对以上方案的两种阈下信道攻击,前者本质上属于"阴影会话密钥"攻击方法,后者则利用签名算法构造阈下信道.通过成功实施各种欺骗攻击,指出两类方案并未在真正意义上解决诸如"一次监听,永远监听" 、用户密钥碎片有效认证及鉴别恶意托管方等问题.最后分析指出两类方案的"强壮性"值得商榷,并证明一些协议组件是不必要的.

优化MISTY型结构的伪随机性

该文对4轮MISTY和3轮双重MISTY两种结构进行了优化。在保持其安全性不变的情况下，把4轮MISTY结构中第1轮的伪随机置换，用一个XOR-泛置换代替，第2，第3轮采用相同的伪随机置换，3轮结构中第1轮的伪随机置换用XOR-泛置换代替，其它轮相同。伪随机置换的数量分别由原来的4个变为2个，3个变为1个，从而缩短了运行时间，节省了密钥量，大大降低了结构的实现成本。

无线Web访问的缓存和预取机制

缓存和预取在提高无线环境下的Web访问性能方面发挥着重要作用。文章研究针对无线局域网的Web缓存和预取机制,分别基于数据挖掘和信息论提出了采用序列挖掘和延迟更新的预测算法,设计了上下文感知的预取算法和获益驱动的缓存替换机制,上述算法已在Web缓存系统OnceEasyCache中实现。性能评估实验结果表明,上述算法的集成能有效地提高缓存命中率和延迟节省率。

基于笔的电子表单设计工具

笔式用户界面以纸笔为隐喻,有着广泛的应用范围。提出了一种基于笔交互的电子表单设计工具,用户可以使用数字笔自然、高效地设计表单。介绍了笔式电子表单工具的设计思路以及其中的关键技术,包括笔手势的设计、笔迹处理的流程以及相关的识别技术。基于设计思路和关键技术,实现了一个原型系统。用户测试表明,基于笔交互的表单设计工具比传统的表单设计工具更加自然、高效。