Raman spectrum of strontium titanate

The Raman spectrum of strontium titanate has been recorded using λ 4358 of mercury as exciter. The observed spectrum consists of 7 Raman lines, one of which is of low frequency, as expected from the recent theory of Cochran. 6 of these Raman lines have been interpreted as the first order spectrum arising from a small deviation of the cubic strontium titanate from its idealized symmetry. It has been shown that one normal mode of SrTiO3 neglected by J.T. Last, will be really active in infrared absorption in the region of 440 cm-1 and that it has to be taken into account in the interpretation of the infrared spectra of titanates. The four vibrational modes of the unit cell of SrTiO3 correspond to frequencies of 90, 335, 441 and 620 cm-1 observed in Raman effect. The large width of the Raman lines and the additional lines at 256 cm-1 and 726 cm-1 have been attributed to a splitting of the longitudinal and transverse optical modes. With the observed frequencies it has been found possible to account for in a satisfactory manner the specific heat of SrTiO3 in the range 54·84° K to 1800° K.

An evaluation of rate-controlling obstacles for low-temperature deformation of zirconium

The low-temperature plastic flow of alpha-zirconium was studied by employing constantrate tensile tests and differential-stress creep experiments. The activation parameters, enthalpy and area, have been obtained as a function of stress for pure, as well as commercial zirconium. The activation area is independent of grain size and purity and falls to about 9b2 at high stresses. The deformation mechanism below about 700° K is found to be controlled by a single thermally activated process, and not a two-stage activation mechanism. Several dislocation mechanisms are examined and it is concluded that overcoming the Peierls energy humps by the formation of kink pairs in a length of dislocation is the rate-controlling mechanism. The total energy needed to nucleate a double kink is about 0.8 eV in pure zirconium and 1 eV in commercial zirconium

Synthesis and Densification of Monolithic Zirconium Carbide by Reactive Hot Pressing

Synthesis and densification of monolithic zirconium carbide (ZrC) has been carried out by reactive hot pressing of zirconium (Zr) and graphite (C) powders in the molar ratios 1:1, 1.25:1, 1.5:1, and 2:1 at 40 MPa, 1200 degrees-1600 degrees C. Monolithic ZrC could be synthesized with a C/Zr ratio similar to 0.5-1.0 and the post heat-treated samples have the lattice parameter in the range 4.665 to 4.698 A. Densification improves with an increasing deviation from the stoichiometry. Fine-grained (similar to 1 mu m) and nearly fully dense material (99% RD) could be obtained at a temperature as low as 1200 degrees C with C/Zr similar to 0.67. Microstructural and XRD observations suggest that densification occurred at low temperatures with nonstoichiometric Zr-C powder mixtures.

Polarization enhancement in compositionally graded vanadium doped bismuth titanate thin films

Compositionally up and downgraded Bi4-x/3Ti3-xVxO12 (x=0.0, 0.012,0.03, 0.06) thin films were grown on Pt coated silicon substrates by pulsed laser deposition technique. Downgraded fabrication showed improved ferroelectric polarization in comparison to upgraded fabrication. Films deposited at 650 and 700 degrees C showed very large remnant polarization (2P(r)) value of 82 mu C cm(-2), which is comparatively large among all bismuth based thin films reported so far. A mechanism based on vanadium enrich seeded layer formation in the downgraded structure is proposed for the improvement. Moreover, frequency independent behavior (100Hz-5kHz) of the graded films ensures its potential application for various microelectronic devices. (c) 2010 American Institute of Physics. [doi :10.1063/1.3431543].

Characterization of barium titanate fine powders formed from hydrothermal crystallization

A detailed evaluation of size, shape and microstrains of BaTiO3 crystallites produced by hydrothermal crystallization at 90 – 180 °C and 0.1 – 1.2 MPa, from amorphous TiO2· xH2O (3 < × < 8) gel and aqueous Ba(OH)2 is presented, using X-ray line-broadening and TEM studies. Whereas the concentration of Ba(OH)2 and the acceptor impurities affect the crystallite shape, the stoichimetry with respect to Ba/Ti, donor as well as acceptor impurities, and the temperature of crystallization influence the microstrains. It is shown that strains in the crystallites are related to the point defects in the lattice. Compensation of the residually present hydroxyl ions in the oxygen sublattice by cation vacancies results in strains leading to metastable presence of the cubic phase at room temperature. Studies on the diffuse phase transition behaviour of these submicron powders show that the stable tetragonal phase is produced only on annealing at high temperatures where the mobility of cations vacancies are larger. Heat-treatment reduces anisotropy and strain in undoped samples, whereas annealing is less effective in doped materials. Comparison of the crystillite size by TEM showed better agreement with the Warren—Averbach method.

Processing map for hot working of alpha-zirconium

The hot deformation characteristics of alpha-zirconium in the temperature range of 650 °C to 850 °C and in the strain-rate range of 10-3 to 102 s-1 are studied with the help of a power dissipation map developed on the basis of the Dynamic Materials Model.[7,8,9] The processing map describes the variation of the efficiency of power dissipation (η =2m/m + 1) calculated on the basis of the strain-rate sensitivity parameter (m), which partitions power dissipation between thermal and microstructural means. The processing map reveals a domain of dynamic recrystallization in the range of 730 °C to 850 °C and 10−2 to 1−1 with its peak efficiency of 40 pct at 800 °C and 0.1 s-1 which may be considered as optimum hot-working parameters. The characteristics of dynamic recrystallization are similar to those of static recrystallization regarding the sigmoidal variation of grain size (or hardness) with temperature, although the dynamic recrystallization temperature is much higher. When deformed at 650 °C and 10-3 s-1 texture-induced dynamic recovery occurred, while at strain rates higher than 1 s-1, alpha-zirconium exhibits microstructural instabilities in the form of localized shear bands which are to be avoided in processing.

A Novel Method for the Uniform Incorporation of Grain-Boundary Layer Modifiers in Positive Temperature Coefficient of Resistivity Barium Titanate

The presently developed two-stage process involves diping the prefired porous disks of n-BaTiO3 in nonaqueous solutions containing Al-buty rate, Ti-isopropoxide, and tetraethyl silicate and subsequent sintering. This leads to uniform distribution of the grain-boundary layer (GBL) modifiers (Al2O3+ TiO2+ SiO2) and better control of the grain size as well as the positive temperature coefficient of resistivity characteristics. The technique is particularly suited for GBL modifiers in low concentrations (< 1%).

Effect of Zirconium on the Processing MAPS For Hot-Working of Alpha-Beta Brass

The effect of zirconium on the hot working characteristics of alpha and alpha-beta brass was studied in the temperature range of 500 to 850-degrees-C and the strain rate range of 0.001 to 100 s-1. On the basis of the flow stress data, processing maps showing the variation of the efficiency of power dissipation (given by [2m/(m+1)] where m is the strain rate sensitivity) with temperature and strain rate were obtained. The addition of zirconium to alpha brass decreased the maximum efficiency of power dissipation from 53 to 39%, increased the strain rate for dynamic recrystallization (DRX) from 0.001 to 0.1 s-1 and improved the hot workability. Alpha-beta brasses with and without zirconium exhibit a domain in the temperature range from 550 to 750-degrees-C and at strain rates lower than 1 s-1 with a maximum efficiency of power dissipation of nearly 50 % occurring in the temperature range of 700 to 750-degrees-C and a strain rate of 0.001 s-1. In the domain, the alpha phase undergoes DRX and controls the hot deformation of the alloy whereas the beta phase deforms superplastically. The addition of zirconium to alpha-beta brass has not affected the processing maps as it gets partitioned to the beta phase and does not alter the constitutive behavior of the alpha phase

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Study of electrical properties of pulsed excimer laser deposited strontium titanate films

Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of [100] and [110] oriented growth after annealing by rapid thermal annealing at 600-degrees-C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/mum2, and a charge density of 40 fC/mum for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.

Insertion of nickel nanoparticles in the interlayers of alpha-zirconium phosphate by the decomposition of the intercalated nickel acetate

By employing EXAFS and magnetic measurements, it is shown that nanoparticles of nickel along with those of NiO are incorporated between the layers of a-zirconium phosphate (ZrP) by the thermal decomposition of nickel acetate intercalated in ZrP. The nickel nanoparticles are superparamagnetic. Hydrogen reduction produces small ferromagnetic nickel particles, most of which appear to be outside the interlayer space of ZrP.

Role of zirconium addition on stability of UAl3 phase in Al-U system

The microstructural changes of Al-22 wt%U and Al-46 wt%U alloys containing 3 wt% Zr were investigated after heat treatment at 620 degrees C for 1 to 45 days, Though it is reported that addition of similar to 3 wt% Zr stabilizes the (U,Zr)Al-3 phase at room temperature, the present investigation shows that the (U,Zr)Al-3 phase is not stable but slowly transforms to the U0.9Al4 phase, The high temperature creep curves generated for these ternary alloys showed a wavy pattern which also suggests that the (U,Zr)Al-3 phase is not stable.