"Askeleen päässä taidosta" - Kolmen askeleen menetelmän soveltuvuuden testaaminen oppimistehtävän avulla motoristen taitojen opetukseen 4. luokan käsityössä

Tutkimuksen tarkoituksena on selvittää taitojen opettamisen kolmen askeleen menetelmän soveltuvuutta motoristen taitojen opetukseen käsityön 4. luokalla. Menetelmän soveltuvuuden testaamiseksi on suunniteltu ja valmistettu oppimistehtävä. Oppimistehtävä on laadittu taitojen opettamisen yleismenetelmän, kolmen askeleen menetelmän pohjalta. Oppimistehtävän laadinnassa on käytetty tukena myös suljetun oppimistehtävän teoreettista perustaa, sekä ositetun ja taitolajipainotteisen käsityön piirteitä. Oppimistehtävä toteutettiin satakuntalaisessa koulussa ja toteutuksen suoritti koulun oma käsityönopettaja. Oppimistehtävän aikana tapahtuvasta toiminnasta, opetuksesta ja oppimisessa on pyritty saamaan tietoa kaikilta siihen osallistuneilta osapuolilta. Oppilaille on suoritettu oppimista mittaava alku ja loppu kysely. Opettajaa on haastateltu, jolloin on saatu oppimistehtävän toteuttajan kokemuksia tapahtuneesta. Lisäksi tutkijat ovat itse osallistuneet toiminnan havainnointiin, sekä videoineet opetusta ja oppilaiden toimintaa. Tutkimus on tutkimusotteeltaan laadullinen tapaustutkimus. Tutkimuksen tuote on motoristen taitojen opettamiseen laadittu oppimistehtävä. Tutkimuksen kulku ja toteutus on kuvattu yksityiskohtaisesti mittarien laadinnasta, aineiston keruun ja -tulosten analysoinnin kautta synteesiin ja tutkimusongelmiin vastaamiseen. Tutkimuksen tulokset osoittavat, että taitojen opettamisen kolmen askeleen menetelmä sisältää myös perusopetuksessa toteutettavan taitojen opetuksen kannalta keskeisimmät elementit. Menetelmä soveltuu etenkin vasta-alkaneille opettajille, mutta myös kokeneille opettajille. Taitojen oppimisen kannalta erityisen tärkeäksi seikaksi tällä ikäryhmällä osoittautui demonstrointi ja ohjaaminen. Lisäksi saimme yksityiskohtaista tietoa, jonka avulla menetelmästä voisi laatia tälle ikäryhmälle vieläkin sopivamman.

Venäläisten rynnäkkökoneiden ja monitoimihävittäjien sensori- ja omasuojajärjestelmien tekninen tarkastelu ja niiden vaikutukset ilmasta-maahan suorituskykyyn

Tutkimuksen aiheena on Venäläisten rynnäkkökoneiden ja monitoimihävittäjien sensorija omasuojajärjestelmien tekninen tarkastelu ja niiden vaikutuksen ilmasta-maahan suorituskykyyn. Tutkimustyö käsittelee venäläisten rynnäkkökoneiden SU-24 ja SU-25 sekä monitoimihävittäjien SU-27SM ja MiG-29SMT sensoreita ja omasuojajärjestelmiä sekä käytettäviä asejärjestelmiä. Tutkimuksessa muodostetaan sensori-, omasuoja- ja asejärjestelmien avulla kokonaiskuva koneiden ilmasta-maahan suorituskyvystä. Tutkimuksessa pyritään vastaamaan seuraaviin kysymyksiin: Mistä muodostuu ilmastamaahan suorituskyky? Mitkä ovat Venäjän ilmavoimien yleisimmät rynnäkkökoneet ja monitoimihävittäjät ja mitä järjestelmiä niissä on? Mikä on koneen optimaalinen suorituskyky tarkasteltavaa kohdetta vastaan? Tutkimuksen sivutuotteena vastataan kysymykseen: Mikä on panssarivaunun tutkaheräte dBm² ja m² suureina? Tutkimuksen tutkimusmenetelminä on käytetty kirjallisuustutkimusta ja vertailevaa tutkimusmenetelmää. Järjestelmien julkisissa lähteissä ilmoitettu suorituskyky on pyritty todentamaan matemaattisesti laskien. PVTT:ssa toteutettujen simulointien avulla on voitu laskea lavettien tutkien havaitsemisetäisyyksiä. Tutkimustyön lähdeaineisto pohjautuu julkisiin lähteisiin. Suurin osa tutkimustyön lähteistä on internetistä julkaistuja artikkeleita ja teknisiä raportteja. Lähdeaineistoa lukemalla, vertailemalla ja analysoimalla on koostettu tietoa aiheesta. Rynnäkkökoneiden ja monitoimihävittäjien tutkien suorituskyvyn muodostamiseksi toteutettiin panssarivaunun 3Dmallin tutkaherätteen simulointi. Tulosten perusteella voidaan vertailla käytössä olevien tutkien suorituskykyä. Ilma-aseen suorituskyky pohjautuu pääosin käytettäviin sensoreihin ja laitteisiin. Sensorijärjestelmillä suunnistetaan, paikannetaan maali, osoitetaan maali käytettävällä asejärjestelmällä ja ohjataan asejärjestelmä haluttuun maaliin. Omasuojajärjestelmillä mahdollistetaan ilma-aseen toimiminen alueella vallitsevasta uhkasta huolimatta. Omasuojajärjestelmät koostuvat varoittimista ja aktiivisista vastatoimenpidejärjestelmistä.. Ilmasta-maahan suorituskykyyn vaikuttavat oleellisesti lavetin kyky havaita kohteita tutkalla, lämpökameralla ja TV-kameralla. Ilmasta-maahan suorituskykyyn vaikuttaa oleellisesti miltä etäisyydeltä kohde voidaan havaita ja miltä etäisyydeltä asejärjestelmä voidaan laukaista. Tutkimuksen perusteella voidaan todeta Venäjän ilmavoimilla olevan suorituskyvyltään hyvällä tasolla olevia koneita. Suorituskykyisten koneiden lukumäärä on hyvin pieni. Suurin osa operatiivisessa käytössä olevista koneista ei ole suorituskyvyltään riittävällä tasolla. Modernisaatioiden myötä Venäjän ilmavoimat saavuttavat riittävän suorituskyvyn rynnäkkökoneille ja monitoimihävittäjille.

Solid-state reference and ion-selective electrodes : towards portable potentiometric sensing

Potentiometric sensors are very attractive tools for chemical analysis because of their simplicity, low power consumption and low cost. They are extensively used in clinical diagnostics and in environmental monitoring. Modern applications of both fields require improvements in the conventional construction and in the performance of the potentiometric sensors, as the trends are towards portable, on-site diagnostics and autonomous sensing in remote locations. The aim of this PhD work was to improve some of the sensor properties that currently hamper the implementation of the potentiometric sensors in modern applications. The first part of the work was concentrated on the development of a solid-state reference electrode (RE) compatible with already existing solid-contact ion-selective electrodes (ISE), both of which are needed for all-solid-state potentiometric sensing systems. A poly(vinyl chloride) membrane doped with a moderately lipophilic salt, tetrabutylammonium-tetrabutylborate (TBA-TBB), was found to show a satisfactory stability of potential in sample solutions with different concentrations. Its response time was nevertheless slow, as it required several minutes to reach the equilibrium. The TBA-TBB membrane RE worked well together with solid-state ISEs in several different situations and on different substrates enabling a miniature design. Solid contacts (SC) that mediate the ion-to-electron transduction are crucial components of well-functioning potentiometric sensors. This transduction process converting the ionic conduction of an ion-selective membrane to the electronic conduction in the circuit was studied with the help of electrochemical impedance spectroscopy (EIS). The solid contacts studied were (i) the conducting polymer (CP) poly(3,4-ethylienedioxythiophene) (PEDOT) and (ii) a carbon cloth having a high surface area. The PEDOT films were doped with a large immobile anion poly(styrene sulfonate) (PSS-) or with a small mobile anion Cl-. As could be expected, the studied PEDOT solid-contact mediated the ion-toelectron transduction more efficiently than the bare glassy carbon substrate, onto which they were electropolymerized, while the impedance of the PEDOT films depended on the mobility of the doping ion and on the ions in the electrolyte. The carbon cloth was found to be an even more effective ion-to-electron transducer than the PEDOT films and it also proved to work as a combined electrical conductor and solid contact when covered with an ion-selective membrane or with a TBA-TBB-based reference membrane. The last part of the work was focused on improving the reproducibility and the potential stability of the SC-ISEs, a problem that culminates to the stability of the standard potential E°. It was proven that the E° of a SC-ISE with a conducting polymer as a solid contact could be adjusted by reducing or oxidizing the CP solid contact by applying current pulses or a potential to it, as the redox state of the CP solid-contact influences the overall potential of the ISE. The slope and thus the analytical performance of the SC-ISEs were retained despite the adjustment of the E°. The shortcircuiting of the SC-ISE with a conventional large-capacitance RE was found to be a feasible instrument-free method to control the E°. With this method, the driving force for the oxidation/reduction of the CP was the potential difference between the RE and the SC-ISE, and the position of the adjusted potential could be controlled by choosing a suitable concentration for the short-circuiting electrolyte. The piece-to-piece reproducibility of the adjusted potential was promising, and the day-today reproducibility for a specific sensor was excellent. The instrumentfree approach to control the E° is very attractive considering practical applications.

Électroencéphalographie, fonctions sensori-motrices et profil cognitif associés au trouble de comportement en sommeil paradoxal

Thèse numérisée par la Division de la gestion de documents et des archives de l'Université de Montréal

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

Development of p-type transparent semiconducting oxides for thin film transistor applications

Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One of the relevant fields of current interest in material science is the fundamental aspects and applications of semi- conducting transparent thin films. Transparent conductors show the properties of transparency and conductivity simultaneously. As far as the band structure is concerned, the combination of the these two properties in the same material is contradictory. Generally a trans- parent material is an insulator having completely filled valence and empty conduction bands. Metallic conductivity come out when the Fermi level lies within a band with a large density of states to provide high carrier concentration. Effective transparent conductors must nec- essarily represent a compromise between a better transmission within the visible spectral range and a controlled but useful electrical con- ductivity [1–6]. Generally oxides like In2O3, SnO2, ZnO, CdO etc, show such a combination. These materials without any doping are insulators with optical band gap of about 3 eV. To become a trans- parent conductor, these materials must be degenerately doped to lift the Fermi level up into the conduction band. Degenerate doping pro- vides high mobility of extra carriers and low optical absorption. The increase in conductivity involves an increase in either carrier concen- tration or mobility. Increase in carrier concentration will enhance the absorption in the visible region while increase in mobility has no re- verse effect on optical properties. Therefore the focus of research for new transparent conducting oxide (TCO) materials is on developing materials with higher carrier mobilities.

El transistor como caja negra.

Estudio sobre el funcionamiento del transistor basándose en el aspecto utilitario o externo, tratando el transistor como una caja opaca, es decir, sin abrirlo y sin estudiar sus componentes internos, sino a través de ecuaciones físicas.

Magnetoresistance and transistor-like behavior of a double quantum-dot via crossed Andreev reflections

The electric current and the magnetoresistance effect are studied in a double quantum-dot system, where one of the dots QD(a) is coupled to two ferromagnetic electrodes (F-1; F-2), while the second QD(b) is connected to a superconductor S. For energy scales within the superconductor gap, electric conduction is allowed by Andreev reflection processes. Due to the presence of two ferromagnetic leads, non-local crossed Andreev reflections are possible. We found that the magnetoresistance sign can be changed by tuning the external potential applied to the ferromagnets. In addition, it is possible to control the current of the first ferromagnet (F-1) through the potential applied to the second one (F-2). We have also included intradot interaction and gate voltages at each quantum dot and analyzed their influence through a mean field approximation. The interaction reduces the current amplitudes with respect to the non-interacting case, but the switching effect still remains as a manifestation of quantum coherence, in scales of the order of the superconductor coherence length. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723000]

Tecttôniica póss--riifftte na Baciia Pottiiguar

The study of Brazilian sedimentary basins concentrates on their rift phase, whereas the Post-rift phase has been considered a tectonic quiescent period. The post-rift sequence of the Potiguar Basin, in the far northeastern Brazil, was once considered little deformed, however several studies have shown how that it was affected by major fault systems. The purpose of this thesis is to characterize the post-rift tectonic. The specific objectives are: to characterize the Neogene and Quaternary sedimentary units that outcrop of the Potiguar Basin; to show how the NW-SEtrending Afonso Bezerra Faults System deformed outcrop rocks in the Basin; to describe soft-sediment deformation in gravels of the Quaternary Alluvial Deposits from Açu River. Facies analyses, grain-size studies, luminescence dating, remote sensing, structural mapping, shallow geophysics (georadar), paleostress and petrography were carried out. The structural mapping and the georadar sections indicated that the Carnaubais and Afonso Bezerra fault systems formed fractures, silicified and non-silicified faults or deformation bands, affecting mainly the Açu, Jandaíra and Barreiras formations. The petrographic data indicate that the strong silicification resulted in a sealant character of the faults. Paleostress analysis indicates that two stress fields affected the Basin: the first presented N-S-trending compression, occurred from the Neocretaceous to the Miocene; the second stress field presents E-W-trending compression, acts from the Miocene to the present. It was verified once the Afonso Bezerra System Faults was reactivated in periods post-Campanian and affects all post-rift lithostratigraphic units of Potiguar Basin, including Quaternary sedimentary covers. The study about soft-sediment deformation structures indicates that they are similar in morphology and size to modern examples of seismically-induced deformation strutures in coarse sediments. TL and OSL ages indicate that sediment deposition and associated soft-sediment deformation occurred at least six times from ~352 Ka to ~9 Ka. Finally these studies demonstrate how recent is tectonics in the Basin Potiguar

Universal zero-bias conductance for the single-electron transistor

The thermal dependence of the zero-bias conductance for the single electron transistor is the target of two independent renormalization-group approaches, both based on the spin-degenerate Anderson impurity model. The first approach, an analytical derivation, maps the Kondo-regime conductance onto the universal conductance function for the particle-hole symmetric model. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. The second approach, a numerical renormalization-group computation of the conductance as a function the temperature and applied gate voltages offers a comprehensive view of zero-bias charge transport through the device. The first approach is exact in the Kondo regime; the second, essentially exact throughout the parametric space of the model. For illustrative purposes, conductance curves resulting from the two approaches are compared.