Fabrication of high-k dielectric thin films for spintronics

Lo scopo di questa tesi è la fabbricazione di ossidi complessi aventi struttura perovskitica, per mezzo della tecnica Channel Spark Ablation (CSA). Più precisamente sono stati depositati film sottili di manganite (LSMO), SrTiO3 (STO) e NdGaO3 (NGO). Inoltre nel laboratorio ospite è stata effettuata la caratterizzazione elettrica e dielettrica (spettroscopia di impedenza), mentre per l'analisi strutturale e chimica ci si è avvalsi di collaborazioni. Sono stati fabbricati dispositivi LSMO/STO/Co e se ne è studiato il comportamento magnetoresistivo e la bistabilità elettrica a seconda del carattere epitassiale od amorfo dell'STO. I risultati più promettenti sono stati ottenuti con STO amorfo. Sono stati costruiti diversi set di condensatori nella configurazione Metallo/Isolante/Semiconduttore (MIS), con M=Au, I=STO o NGO ed S=Nb:STO, allo scopo di indagare la dipendenza delle proprietà dielettriche ed isolanti dai parametri di crescita. In particolare ci si è concentrati sulla temperatura di deposizione e, nel caso dei film di STO, anche sulla dipendenza della costante dielettrica dallo spessore del film. Come ci si aspettava, la costante dielettrica relativa dei film di STO (65 per un film spesso 40 nm e 175 per uno di 170 nm) si è rivelata maggiore di quella dei film di NGO per i quali abbiamo ottenuto un valore di 20, che coincide con il valore del bulk. Nonostante l'elevata capacità per unità di area ottenibile con l'STO, la costante dielettrica di questo materiale risulta fortemente dipendente dallo spessore del film. Un ulteriore aspetto critico relativo all'STO è dato dal livello di ossidazione del film: le vacanze di ossigeno, infatti, possono ridurre la resistività dell'STO (nominalmente molto elevata), ed aumentarne la corrente di perdita. Al contrario l'NGO è meno sensibile ai processi tecnologici e, allo stesso tempo, ha un valore di costante dielettrica più alto rispetto ad un tipico dielettrico come l'ossido di silicio.

Annotated record and chemical composition of manganese nodules from station VITYAZ 4575, Indian Ocean

Analyses are given for the core and outer colliform shell of a manganese nodule collected at a depth of 5000 m in the Indian Ocean, and for the red clay that encloses the nodules. Trace elements determined include rare earths, Nb, Ta, Th, and V. The cores of the nodules were once composed of basaltic rock, but now are phillipsite and nontronite. The outer shell is composed of manganite, with admixed quartz, phillipsite, and some geothite. The correlations established between the redox potentials and the concentration coefficients for 12 elements indicate that Eh plays a greater role in the formation of the manganiferous shells than coprecipitation properties.

(Table 4) Mineralogy at DSDP Leg 55 Holes

On Leg 55, cores were takenfrom three seamounts in the Emperor Seamount chain: Ojin, Nintoku, and Suiko Seamounts. At the drilling sites the water depth was 1300 to 1700 meters; the maximum thickness of the sediment column was 180 meters at Site 433.

Chemical composition of manganese nodules from the Southern Pacific

Deep sea manganese nodules from the Southern Ocean have been studied using chemical analysis, X-ray diffraction, optical mineragraphic and electron probe microanalysis techniques. The nodules were lower in manganese, iron and associated elements than the average grade of manganese nodules from other localities. A number of chemical relationships have been observed. Nickel, copper, cobalt, barium, zinc, molybdenum, strontium, sulphur and phosphorus are associated with the manganese rich phases and titanium with the iron rich phases. X-ray diffraction analysis and electron probe microanalysis results indicate that the manganese phases are similar to the disordered delta-MnO2 and "manganite" phases reported by other workers.

Analysis of Manganese nodules from the Challenger Expedition

Manganese nodules from Stations 252 and 281 of the Challenger Expedition, collected in 1875, have recently been discovered in the Redpath Museum. The nodules have been found to be quite typical specimens of two areas in the Central Pacific Ocean except for dehydration and other changes that have taken place during storage. The principal resolvable manganese mineral in nodules from Station 252 proved to be 10 A manganite; there was a very thin surface coating of birnessite. Delta manganite was the only manganese mineral found in nodules from Station 281. Through electron microprobe studies, findings from chemical, optical and x-ray crystallographic work were correlated with the detailed picture of the occurrence and quantities of the different elements within the nodules. In all cases it was found that the iron and manganese had an antithetical relationship, and that nickel and copper were associated with the manganese. Special study was given to a 300-micron-square area in a nodule from Station 252 which included a segregation of 49.39% Mn, 5.31 % Ni, and 1.64% Cu. Crystallization of the manganese phases is thought to have provided a mech¨anism for formation of segregations which were further enriched through chemical scavenger action as long as ocean floor conditions permitted.

Thermally assisted tunneling transport in La0.7Ca0.3MnO3/SrTiO3:Nb Schottky-like heterojunctions

We report on the electrical transport properties of all-oxide La0.7Ca0.3MnO3/SrTiO3:Nb heterojunctions with lateral size of just a few micrometers. The use of lithography techniques to pattern manganite pillars ensures perpendicular transport and allows exploration of the microscopic conduction mechanism through the interface. From the analysis of the current-voltage characteristics in the temperature range 20-280 K we find a Schottky-like behavior that can be described by a mechanism of thermally assisted tunneling if a temperature-dependent value of the dielectric permittivity of SrTiO3:Nb (NSTO) is considered.We determine the Schottky energy barrier at the interface, qVB = 1.10 ± 0.02 eV, which is found to be temperature independent, and a value of ? = 17 ± 2 meV for the energy of the Fermi level in NSTO with respect to the bottom of its conduction band.