Effect of Impurities upon Current Efficiency in the Electrolysis of Zinc Sulphate Solution

There are many elements which are detrimental to the current efficiency in the electrolysis of zinc sulphate solution. Fortunately the majority of these elements are easily removed in the purification process and cause no further trouble. The elements that are likely to cause trouble in ordinary plant operations are antimony, arsenic, cobalt, nickel, manganese and germanium. The following tests were made to determine the mutual effect on the current efficiency when several of the impurities were present in the electrolyte.

The Effect of Impurities on the Electrodeposition of Zinc from Zinc Sulfate Solution Containing Antimony.

It has been proven by research and years of experience, that before electrolytic zinc is possible, the electrolyte, as zinc sulfate solution must be prepared as pure as is economical. In other words, the ideal electrolyte must only be a solution of one metal - zinc. Every other metal and carbon must be excluded if good recovery and a firm deposit is to be obtained.

Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon

The usage of more inexpensive silicon feedstock for crystallizing mc-Si blocks promises cost reduction for the photovoltaic market. For example, less expensive substrates of upgraded metallurgical silicon (UMG-Si) are used as a mechanical support for the epitaxial solar cell. This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Metals like aluminum (Al) can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, silicon oxide (SiOx) lowers the mechanical strength of mc-Si due to thermal residual stresses and stress intensification when an external load is applied in the surrounding of the particle. Silicon carbide (SiC) introduces thermal residual stresses and intensifies slightly the stress in the surrounding of the particle but can have a toughening effect on the silicon matrix. Finally, silicon nitride (Si3N4) does not influence significantly the mechanical strength of mc- Si and can have a toughening effect on the silicon matrix.

Electronic and optical properties of substitutional V, Cr and Ir impurities in Cu2ZnSnS4

The substitution of cation atoms by V, Cr and It in the natural and synthetic quaternary Cu2ZnSnS4 semiconductor is analyzed using first-principles methods. In most of the substitutions, the electronic structure of these modified CZTS is characterized for intermediate bands with different occupation and position within of the energy band gap. A study of the symmetry and composition of these intermediate bands is carried out for all substitutions. These bands permit additional photon absorption and emission channels depending on their occupation. The optical properties are obtained and analyzed. The absorption coefficients are split into contributions from the different absorption channels and from the inter- and intra-atomic components. The sub bandgap transitions are significant in many cases because the anion states contribute to the valence, conduction and intermediates bands. These properties could therefore be used for novel optoelectronic devices.

The manual of colours and dye wares : their properties, applications, valuation, impurities and sophistications : for the use of dyers, printers, drysalters, brokers, etc. /

Includes index.

Analysis of effects of impurities intentionally incorporated into silicon /

"Contract 954694."

Analysis of effects of impurities intentionally incorporated into silicon /

"Contract 954694."

Analysis of effects of impurities intentionally incorporated into silicon /

"Contract 954694."

Commercial organic analysis. A treatise on the properties, proximate analytical examination, and modes of assaying the various organic chemicals and products employed in the arts, manufactures, medicine, etc., with concise methods for the detection and determination of their impurities, adulterations, and products of decomposition.

v.I. Introduction. Alcohols, neutral alcoholic derivatives, sugars, starch and its isomers, vegetable acids, etc. 2d ed., rev. & enl.--v.II. Fixed oils, fats, waxes, glycerol, nitroglycerin and nitroglycerin explosives. Hydrocarbons, petroleum and coal-tar products, asphalt, phenols and creosotes. 2d ed., rev. & enl.--v. III, pt.I. Acid derivatives of phenols, aromatic acids, resins, and essential oils. Tannins, dyes, and colouring matters, writing inks. 2d ed., rev. & enl.--v. III, pt.II. Amines and ammonium bases, hydrarzines, bases from tar, vegetable alkaloids. 2d ed., rev. and enl. [1892] --v.III, pt.III. Vegetable alkaloids (concluded), non-basic vegetable bitter principles, animal bases, animal acids, cyanogen and its derivatives. 2d ed., rev. & enl. [1896]--v.IV. Proteids and albuminous principles, proteoïds or albuminoïds. 2d ed., rev. & enl. 1898.

Allen's commercial organic analysis; a treatise on the properties, modes of assaying, and proximate analytical examination of the various organic chemicals and products employed in the arts, manufactures, medicine, etc., with concise methods for the detection and estimation of their impurities, adulterations, and products of decomposition ...

Vols. 3-9 edited by W.A. Davis and Samuel S. Sadtler.

The role of impurities in the shape, structure and physical properties of semiconducting oxide nanostructures grown by thermal evaporation

A thermal evaporation method developed in the research group enables to grow and design several morphologies of semiconducting oxide nanostructures, such as Ga_2O_3, GeO_2 or Sb_2O_3, among others, and some ternary oxide compounds (ZnGa_2O_4, Zn_2GeO_4). In order to tailor physical properties, a successful doping of these nanostructures is required. However, for nanostructured materials, doping may affect not only their physical properties, but also their morphology during the thermal growth process. In this paper, we will show some examples of how the addition of impurities may result into the formation of complex structures, or changes in the structural phase of the material. In particular, we will consider the addition of Sn and Cr impurities into the precursors used to grow Ga_2O_3, Zn_2GeO_4 and Sb_2O_3 nanowires, nanorods or complex nanostructures, such as crossing wires or hierarchical structures. Structural and optical properties were assessed by electron microscopy (SEM and TEM), confocal microscopy, spatially resolved cathodoluminescence (CL), photoluminescence, and Raman spectroscopies. The growth mechanisms, the luminescence bands and the optical confinement in the obtained oxide nanostructures will be discussed. In particular, some of these nanostructures have been found to be of interest as optical microcavities. These nanomaterials may have applications in optical sensing and energy devices.

Analysis of Cosmogenic Impurities in Tellurium and Development of Tellurium Loading for the SNO+ Experiment

For the SNO+ neutrinoless double beta decay search, various backgrounds, ranging from impurities present naturally to those produced cosmogenically, must be understood and reduced. Cosmogenic backgrounds are particularly difficult to reduce as they are continually regenerated while exposed to high energy cosmic rays. To reduce these cosmogenics as much as possible the tellurium used for the neutrinoless double beta decay search will be purified underground. An analysis of the purification factors achievable for insoluble cosmogenic impurities found a reduction factor of $>$20.4 at 50\% C.L.. During the purification process the tellurium will come into contact with ultra pure water and nitric acid. These liquids both carry some cosmogenic impurities with them that could be potentially transferred to the tellurium. A conservative limit is set at $<$18 events in the SNO+ region of interest (ROI) per year as a result of contaminants from these liquids. In addition to cosmogenics brought underground, muons can produce radioactive isotopes while the tellurium is stored underground. A study on the rate at which muons produce these backgrounds finds an additional 1 event per year. In order to load the tellurium into the detector, it will be combined with 1,2-butanediol to form an organometallic complex. The complex was found to have minimal effect on the SNO+ acrylic vessel for 154 years.