Influencia del TiO2 y Al2O3 sobre las propiedades eléctricas y microestructurales de cerámicas de SnO2 obtenidas por el método Pechini

Tin oxide has wakened up great scientific and technological interest for its potential use in varistors production and as gas sensor. In order to improve the microstructural and electrical properties in SnO varistor ceramics, the influence of differents dopants used, like TiO2 and Al2O3, is under research. The effect of TiO2 and Al2O3 on the properties of Sn-Co-Nb varistor Systems obtained by the Pechini method has been investigated in this work. Characterization of synthesized raw material was performed by X-Ray Diffraction (XRD) and Scanning Electronic Microscopy (SEM). The microstructural and electrical characterization of sintered samples show that the TiO2 favors the grain growth and the Al2O3, contributes to the decrease it, effect that is manifested in the Sn-Co-Nb varistor systems. Breakdown field increase up to 6300V/cm with increasing Al2O3 content and non-linear coefficients with α=22 were obtained.

Microscopic and dielectric analyses of vanadium and tungsten modified barium zirconium titanate ceramics

Dielectric spectroscopy was used in this study to examine polycrystalline vanadium and tungstendoped BaZr 0.1Ti 0.90O 3 (BZT10:2V and BZT10:2W) ceramics obtained by the mixed oxide method. According to X-ray diffraction analyses, addition of vanadium and tungsten lead to ceramics free of secondary phases. SEM analyses reveal that both dopants result in slower oxygen ion motion and consequently lower grain growth rate. Temperature dependence dielectric study showed normal ferroelectric to paraelectric transition well above the room temperature for the BZT10 and BZT10:2V ceramics. However, BZT10:2W ceramic showed a relaxor-like behavior near phase transition characterized by the empirical parameter γ. Piezoelectric force microscopy images reveals that the piezoelectric coefficient is strongly influenced by type of donor dopant suggesting promising applications for dynamic random access memories and data-storage media. Copyright © 2010 American Scientific Publishers All rights reserved.

Sintering temperature influence on microwave dielectric properties of TiO2-ZrO2 ceramics

Dielectric ceramics have been widely investigated and used for microwave applications such as resonators and filters. The present study deals with the influence of sintering temperature on microwave dielectric properties of TiO2 ceramics with 10, 20, and 30 wt% ZrO2. Three compositions have been developed through mixing procedures and then tested for each sintering temperature: 1500 and 1400°C. X-ray diffraction and scanning electron microscopy are carried out aiming to explain the ceramic behavior of each sample. The dielectric constants of different ceramics for both temperatures varied from 85.4 to 62.6, while their quality factor due to dielectric losses varied from 3110 to 1630. The Q decrease is attributed to the non uniform grain growth and to the obtained crystalline phases. The best microwave parameters were obtained for the ceramics sintered at 1400°C, which can be applied in microwave circuits as dielectric resonators. © (2010) Trans Tech Publications.

Influence of the network modifier on the characteristics of MSnO 3 (M=Sr and Ca) thin films synthesized by chemical solution deposition

CaSnO3 and SrSnO3 alkaline earth stannate thin films were prepared by chemical solution deposition using the polymeric precursor method on various single crystal substrates (R- and C-sapphire and 100-SrTiO3) at different temperatures. The films were characterized by X-ray diffraction (θ-2θ, ω- and φ-scans), field emission scanning electron microscopy, atomic force microscopy, micro-Raman spectroscopy and photoluminescence. Epitaxial SrSnO3 and CaSnO 3 thin films were obtained on SrTiO3 with a high crystalline quality. The long-range symmetry promoted a short-range disorder which led to photoluminescence in the epitaxial films. In contrast, the films deposited on sapphire exhibited a random polycrystalline growth with no meaningful emission regardless of the substrate orientation. The network modifier (Ca or Sr) and the substrate (sapphire or SrTiO3) influenced the crystallization process and/or the microstructure. Higher is the tilts of the SnO6 octahedra, as in CaSnO3, higher is the crystallization temperature, which changed also the nucleation/grain growth process. © 2012 Elsevier Inc. All rights reserved.

Inomogeneidades estruturais em amostras nanoscópicas de supercondutores de alta temperatura crítica

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Síntese de templates para aplicação em piezocerâmicas livre de chumbo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização microestrutural de um aço baixo carbono e baixos teores de elementos de ligas com estrutura contento ferrita acicular

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização elétrica e microestrutural de cerâmicas varistoras de baixa tensão à base de ('SN IND.1-x''TI IND.x')'O IND.2' e 'SN''O IND.2' dopados com 'CO''O' e 'NB IND.2''O IND.5'

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização microestrutural e mecânica de trilhos ferroviários soldados de topo por caldeamento

Pós-graduação em Engenharia Mecânica - FEIS

Influence of the network modifier on the characteristics of MSnO3 (M=Sr and,Ca) thin films synthesized by chemical solution deposition

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Second Phase Precipitation in Ultrafine-grained Ferrite Steel

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Carbon isotope fractionation for cotton genotype selection

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Translucent tin dioxide ceramics obtained by natural sintering

Dense SnO2-based ceramics (relative density >95%) have been obtained by natural sintering at a moderate temperature (less than or equal to 1300 degrees C) with the help of a small amount of manganese, Further thermal treatments above 1500 degrees C result in grain growth and transport of manganese toward the sample surface. If the ceramic is embedded inside alumina powder, the diffusion of Mn out of the sample and into alumina during such heat treatments leads to a manganese-free body (<40 ppm) which is translucent. The transmission in the visible region depends on sample thickness; 61% was achieved for a 0.05 mm thick sample.

Produção de celulases fúngicas por fermentação em estado sólido: ampliação de escala de biorreatores de leito fixo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

alpha-SiAlON-SiC composites obtained by gas-pressure sintering and hot-pressing

The objective of this work was the obtaining in situ of alpha-SiAlON-SiC composite, using an alternative rare-earth oxide mixture, RE2O3, as sintering additive, by two different sintering processes. As sintering additive, 20 vol.% of AlN-RE2O3 in a molar ratio of 90: 10 was mixed to the alpha-Si3N4 powder. In the Si3N4-AlN-RE2O3 powder mixture, 0, 10, 15 and 20wt.% of SiC were added. The powder batches were milled, dried and compacted by cold isostatic pressing. Two different sintering processes were used: gas-pressure sintering at 1950 degrees C for 1 h under 1.5 MPa of N-2 atmosphere, or uniaxial hot-pressing at 1750 degrees C, for 30 min under pressure of 20 MPa. The sintered samples were characterized by X-ray diffraction, scanning electron microscopy and mechanical properties. XRD patterns indicate only alpha-SiAlON (alpha') and beta-SiC as crystalline phases. It was observed that the SiC addition did not influence the alpha-SiAlON formation, although the growth of elongated alpha'-grains is substantially decreased. The hot-pressed composites presented better mechanical properties, exhibiting fracture toughness of 5 MPa m(1/2) and hardness around 21.5 GPa. (c) 2007 Elsevier B.V. All rights reserved.