333 resultados para compensating


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By employing first-principle total-energy calculations, a systematic study of the dopability of ZnS to be both n- and p-types compared with that of ZnO is carried out. We find that all the attempted acceptor dopants, group V substituting on the S lattice site and group I and IB on the Zn sites in ZnS, have lower ionization energies than the corresponding ones in ZnO. This can be accounted for by the fact that ZnS has relative higher valence band maximum than ZnO. Native ZnS is weak p-type under S-rich condition, as the abundant acceptor V-Zn has rather large ionization energy. Self-compensations by the formation of interstitial donors in group I and IB-doped p-type ZnS can be avoided when sample is prepared under S-rich condition. In terms of ionization energies, Li-Zn and N-S are the preferred acceptors in ZnS. Native n- type doping of ZnS is limited by the spontaneous formation of intrinsic V-Zn(2-); high efficient n-type doping with dopants is harder to achieve than in ZnO because of the readiness of forming native compensating centers and higher ionization energy of donors in ZnS. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3103585]

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Photonic crystal devices with feature sizes of a few hundred nanometers are often fabricated by electron beam lithography. The proximity effect, stitching error and resist profiles have significant influence on the pattern quality, and therefore determine the optical properties of the devices. In this paper, detailed analyses and simple solutions to these problems are presented. The proximity effect is corrected by the introduction of a compensating dose. The influence of the stitching error is alleviated by replacing the original access waveguides with taper-added waveguides, and the taper parameters are also discussed to get the optimal choice. It is demonstrated experimentally that patterns exposed with different doses have almost the same edge-profiles in the resist for the same development time, and that optimized etching conditions can improve the wall angle of the holes in the substrate remarkably. (c) 2006 Elsevier B.V. All rights reserved.

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Positron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The different annealing ambiences convert the as-grown n-type undoped InP into two types of semi-insulating (SI) states. The positron average lifetimes of as-grown InP, PP SI-InP, and IP SI-InP are found to be 246, 251, and 243 ps, respectively, which are all longer than the bulk lifetime of 240 ps, indicating the existence of vacancy-type positron-trapping defects. For as-grown InP, VInH4 complexes are the dominant defects. They dissociate into VInHn(0less than or equal tonless than or equal to3) acceptor vacancies under PP ambience annealing, compensating the residual shallow donors and turning the material semi-insulating. In forming IP SI-InP, diffusion of iron into V-In complexes under IP ambience annealing produces the substitutional compensation defect Fe-In, causing a shorter positron average lifetime. The PICTS measurements show that a group of vacancy-type defects has been suppressed by iron diffusion during the annealing process, which is in good agreement with the PAL results. (C) 2003 American Institute of Physics.

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In our recent report, [Xu , Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n(+) layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n(+) conductivity is not only from the contribution of nitride-site oxygen (O-N), but also from the gallium-site silicon (Si-Ga) donors, with activation energies 2 meV (for O-N) and 42 meV (for Si-Ga), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. Si-Ga and O-N should also be shallow donors and V-Ga-O or V-Ga-Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration N-A=1.8x10(17) cm(-3), the second donor concentration N-D2=1.0x10(18) cm(-3), and the compensation ratio C=N-A/N-D1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. (C) 2001 American Institute of Physics.

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Various high-speed laser modules are fabricated by TO-Packaged processes, such as FP laser modules, DFB laser modules, and VCSEL modules. Furthermore,, the resonance among the circuit elements provides an approach to compensating the TO packaging parasitics, and improving the frequency response of the devices. The detailed equivalent circuit model is established to investigate both the laser diode and packaging comprehensively. The small-signal modulation bandwidths of the TO packaged FP laser, DFB laser and the VCSEL modules are more than 10, 9.7 and 8 GHz, respectively.

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Almost free-standing single crystal mesoscale and nanoscale dots of ferroelectric BaTiO(3) have been made by direct focused ion beam patterning of bulk single crystal material. The domain structures which appear in these single crystal dots, after cooling through the Curie temperature, were observed to form into quadrants, with each quadrant consisting of fine 90 degrees stripe domains. The reason that these rather complex domain configurations form is uncertain, but we consider and discuss three possibilities for their genesis: first, that the quadrant features initially form to facilitate field-closure, but then develop 90 degrees shape compensating stripe domains in order to accommodate disclination stresses; second, that they are the result of the impingement of domain packets which nucleate at the sidewalls of the dots forming "Forsbergh" patterns (essentially the result of phase transition kinetics); and third, that 90 degrees domains form to conserve the shape of the nanodot as it is cooled through the Curie temperature but arrange into quadrant packets in order to minimize the energy associated with uncompensated surface charges (thus representing an equilibrium state). While the third model is the preferred one, we note that the second and third models are not mutually exclusive.

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We report a novel technique to broaden and reshape the spectrum of picosecond laser pulse based on the seeder of gain switch laser diode and Yb(3+)-doped fiber amplifier (YDFA). From compensating the seed spectrum with the gain of YDFA, the seed pulse of 7 nm bandwidth is broadened to 20 nm, and the flat top spectral shape is obtained as well. A self-made fiber coupled tunable filter is used to realize the tunable output laser with the wavelength range from 1053 nm to 1073 nm and the line width of 1.4 nm.

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A new type of interferometer, the moving-optical-wedge interferometer, is presented, and its principle and properties are studied. The novel interferometer consists of one beam splitter, two flat fixed mirrors, two fixed compensating plates, one fixed optical wedge, and one moving optical wedge. The optical path difference (OPD) as a function of the displacement of the moving optical wedge from the zero path difference position is accomplished by the straight reciprocating motion of the moving optical wedge. A large physical shift of the moving optical wedge corresponds to a very short OPD value of the new interferometer if the values of the wedge angle and the refractive index of the two optical wedges are given properly. The new interferometer is not so sensitive to the velocity variation of the moving optical wedge and the mechanical disturbances compared with the Michelson interferometer, and it is very applicable to low-spectral-resolution application for any wavenumber region from the far infrared down to the ultraviolet. (C) 2008 Optical Society of America.

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An arch-shaped beam with different configurations under electrostatic loading experiences either the direct pull-in instability or the snap-through first and then the pull-in instability. When the pull-in instability occurs, the system collides with the electrode and adheres to it, which usually causes the system failure. When the snap-through instability occurs, the system experiences a discontinuous displacement to flip over without colliding with the electrode. The snap-through instability is an ideal actuation mechanism because of the following reasons: (1) after snap-through the system regains the stability and capability of withstanding further loading; (2) the system flips back when the loading is reduced, i.e. the system can be used repetitively; and (3) when approaching snap-through instability the system effective stiffness reduces toward zero, which leads to a fast flipping-over response. To differentiate these two types of instability responses for an arch-shaped beam is vital for the actuator design. For an arch-shaped beam under electrostatic loading, the nonlinear terms of the mid-plane stretching and the electrostatic loading make the analytical solution extremely difficult if not impossible and the related numerical solution is rather complex. Using the one mode expansion approximation and the truncation of the higher-order terms of the Taylor series, we present an analytical solution here. However, the one mode approximation and the truncation error of the Taylor series can cause serious error in the solution. Therefore, an error-compensating mechanism is also proposed. The analytical results are compared with both the experimental data and the numerical multi-mode analysis. The analytical method presented here offers a simple yet efficient solution approach by retaining good accuracy to analyze the instability of an arch-shaped beam under electrostatic loading.

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The principle of particle coupling between horizontal and vertical directions in solenoid is presented. Further more, the method of decoupling can be obtained by using the coupling dynamic equations. 5000 particles are tracked under three conditions: CSRm doesn't contain solenoids, contains main solenoid and toroids, contains compensating solenoids. The results of the particle trace calculations show that the particles coupling between horizontal and vertical is very serious because of the existence of solenoids, and lot's of particals are lost. Another two solenoids which locate in the fit place can be used to decrease the coupling intensation. The method is proved to be useful by the trace calculations.

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A novel three-dimensional fluorinated gallium phosphate has been hydrothermally,synthesized by using diethylenetriamine as an organic structure-directing agent. X-ray single crystal structure analysis indicates this compound crystallizes in the orthorhombic space group P-bca, a = 1. 605 6 (7) nm, b = 1.011 4 (4) nm, c=1. 854 6(5) nm, V=3. 011 6(19) nm(3), Z=4. The three-dimensional framework based on linkage of corner-sharing polyhedron PO4, GaO4F and GaO4F2 delimit ten-ring channels along b axis in which the triply protonated amines are located serving as charge compensating guests and supporters.

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With the method of high temperature solid state reaction and stockbarger, we synthesized a series of powder phosphors of KMgF3-Ce3+, KMg1-alphaMalphaF3-Ce3+(M = Be2+, Ca2+) and the single crystal of KMgF3-Ce3+. We tested their excitation and emission spectra, found two emission centers in KMgF3-Ce3+ and demonstrated that they resulted from different charge compensating ways. By the structural analysis on KMgF3-Ce-3+ from a four-cycle diffractometer and spectral analysis on KMg1-alphaMalphaF3-Ce3+(M = Be2+, Ca2+), we deduced that Ce3+ ion only.substituted K+ site in KMgF3.

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An N-shape thermal front in the western South Yellow Sea (YS) in winter was detected using Advanced Very High Resolution Radiation (AVHRR) Sea Surface Temperature data and in-situ observations with a merged front-detecting method. The front, which exists from late October through early March, consists of western and eastern wings extending roughly along the northeast-southwest isobaths with a southeastward middle segment across the 20-50 m isobaths. There are north and south inflexions connecting the middle segment with the western and eastern wings, respectively. The middle segment gradually moves southwestward from November through February with its length increasing from 62 km to 107 km and the southern inflexion moving from 36.2A degrees N to 35.3A degrees N. A cold tongue is found to coexist with the N-shape front, and is carried by the coastal jet penetrating southward from the tip of the Shandong Peninsula into the western South YS as revealed by a numerical simulation. After departing from the coast, the jet flows as an anti-cyclonic recirculation below 10 m depth, trapping warmer water originally carried by the compensating Yellow Sea Warm Current (YSWC). A northwestward flowing branch of the YSWC is also found on the lowest level south of the front. The N-shape front initially forms between the cold tongue and warm water involved in the subsurface anti-cyclonical recirculation and extends upwards to the surface through vertical advection and mixing. Correlation analyses reveal that northerly and easterly winds tend to be favorable to the formation and extension of the N-shape front probably through strengthening of the coastal jet and shifting the YSWC pathway eastward, respectively.

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Sulfated polysaccharide fraction F2 from Porphyra haitanesis (Rhodephyta) showed inhibitory effect on the in vitro lipid peroxidation. In the present study, the age-related changes in the antioxidant enzyme activity, lipid peroxidation, and total antioxidant capacity (TAOC) in different organs in mice were investigated and the in vivo antioxidant effect of F2 in aging mice was checked. Increased endogenous lipid peroxidation and decreased TAOC were observed in aging mice. Intraperitoneal administration of F2 significantly decreased the lipid peroxidation in a dose-dependent manner. F2 treatment increased TAOC and the activity of superoxide dismutase (SOD) and glutathione peroxidase (GSH-Px) in all the organs tested in aging mice. It is concluded that the sulfated polysaccharide fraction F2 can be used in compensating the decline in TAOC and the activities of antioxidant enzymes and thereby reduces the risks of lipid peroxidation. (C) 2003 Elsevier Science Ltd. All rights reserved.

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本文介绍的仿人机器人具有差动腰部机构,它除了受自身的动力学影响以外,还受到手臂和车体运动以及外力、外力矩等对腰部机构关节力矩的影响。笔者利用高效牛顿-欧拉算法完成了仿人机器人的整体建模;在不考虑各关节间耦合运动的情况下,对整体动力学模型进行适当简化,得到了腰部机构的动力学模型。简化后的动力学模型既反映了机器人车体、腰部及双臂的动力学关系,又大大地减小了计算量,易于实现基于动力学的控制算法。基于动力学模型,给出了腰部机构PD伺服轨迹跟踪控制算法,并结合计算力矩方法用于补偿腰部机构两关节受到的力矩扰动。仿真分析表明,该控制方法可以明显提高腰部机构的位置跟踪精度,并提高仿人机器人的整体作业精度。