Remark on Laser Bending Mechanisms

Laser bending mechanism is remarked, and its essence is the temperature gradient mechanism. The reverse bending and the thickened mechanisms are included in the temperature gradient mechanism because they are only different phenomena based on different thickness of the material. Experimental result shows that there is a kind of un-convention temperature distribution in the limit thickness specimen under laser irradiation. This phenomenon cannot be explained by the classical Fourier Law and is defined as Pan-Fourier effect in order to explain laser bending mechanism further.

Self-instability and bending behaviors of nano plates

This paper aims at investigating the size-dependent self-buckling and bending behaviors of nano plates through incorporating surface elasticity into the elasticity with residual stress fields. In the absence of external loading, positive surface tension induces a compressive residual stress field in the bulk of the nano plate and there may be self-equilibrium states corresponding to the plate self-buckling. The self-instability of nano plates is investigated and the critical self-instability size of simply supported rectangular nano plates is determined. In addition, the residual stress field in the bulk of the nano plate is usually neglected in the existing literatures, where the elastic response of the bulk is often described by the classical Hooke’s law. The present paper considered the effect of the residual stress in the bulk induced by surface tension and adopted the elasticity with residual stress fields to study the bending behaviors of nano plates without buckling. The present results show that the surface effects only modify the coefficients in corresponding equations of the classical Kirchhoff plate theory.

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.

Modal fields and bending loss analyses of three-layer large flattened mode fibers

Theoretical method to analyze three-layer large flattened mode (LFM) fibers is presented. The modal fields, including the fundamental and higher order modes, and bending loss of the fiber are analyzed. The reason forming the different modal fields is explained and the feasibility to filter out the higher order modes via bending to realize high power, high beam quality fiber laser is given. Comparisons are made with the standard step-index fiber. (c) 2006 Elsevier B.V. All rights reserved.