Multicolor Tuning of Manganese-Doped ZnS Colloidal Nanocrystals

In this paper, we report a facile route which is based Oil tuning doping concentration of Mn2+ ions in ZnS nanocrystals, to achieve deliberate color modulation from blue to orange-yellow under single-wavelength excitation. X-ray diffraction (XRD), transmission electron microscopy (TEM), as well as photoluminescence (PL) spectra were employed to characterize the obtained samples. In this process, the relative emission intensities of both ZnS host (blue) and Mn2+ dopant (orange-yellow) are sensitive to the Mn2+ doping concentration, due to the energy transfer from ZnS host to Mn2+ dopant. As a result of fine-tuning of these two emission components, white emission can be realized for Mn2+-doped ZnS nanocrystals. Furthermore.

Shape-Controlled Synthesis of Wurtzite ZnS Microstructures Under Mild Solvothermal Condition

Through a facile solvothermal route using zinc chloride and thiourea as reactants, wurtzite ZnS and its precursor ZnS center dot (en)(0.5) (en = ethylenediamine) with various morphologies and sizes were grown, which were characterized by XRD, SEM, TEM and N-2 adsorption and so on. The phase evolution, composition and morphologies of the products are highly dependent on the concentration of en. By keeping the en-water volume ratio at 1/2 to 1, the nanostripes-flower or nanorod-spheric wurtzite ZnS were easily obtained under 120 degrees C for 6-24 h, which possess relatively higher specific surface area and larger total pore volume.

Synthesis and characterization of high-quality ZnS, ZnS : Mn2+, and ZnS : Mn2+/ZnS (core/shell) luminescent nanocrystals

High-quality ZnS, ZnS:Mn2+, and ZnS:Mn2+/ZnS (core/shell) nanocrystals (NCs) were synthesized via a high-boiling solvent process and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), electron paramagnetic resonance (EPR), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectra. The monodisperse ZnS NCs (size = 8 nm), which self-assembled into several micrometer-sized domains, were achieved by adopting poly(ethylene glycol) (PEG) in the reaction process (without using a size-selection process). The obtained ZnS:Mn2+ and ZnS:Mn2+/ZnS core/shell NCs are highly crystalline and quasimonodisperse with an average particle size of 6.1 and 8.4 nm, respectively. All of the as-formed NCs can be well dispersed in hexane to form stable and clear colloidal solutions, which show strong visible emission (blue for ZnS and red-orange for ZnS:Mn2+ and ZnS:Mn2+/ZnS) under UV excitation. The growth of a ZnS shell on ZnS:Mn2+ NCs, that is, the formation of ZnS:Mn2+/ZnS core/shell NCs, resulted in a 30% enhancement in the PL intensity with respect to that of bare ZnS:Mn2+ NCs due to the elimination of the surface defects.

Well-organized structures of ZnS semiconductor nanocrystals using amphiphilic triblock copolymer aggregates as templates

Ring- and rod-shaped P4VP-b-PS-b-P4VP ( PS, polystyrene; P4VP, poly( 4-vinylpyridine)) triblock copolymer aggregates are used as templates to synthesize ZnS nanocrystals. Herein, PVP serves as both a stabilizing agent and a structure- directing agent. The resulting ZnS nanocrystals could be aligned along the corona of the copolymer aggregates in near-perfect structures through control of both the molar ratio of Zn2+ to P4VP and the reaction time. The diameter of the as-synthesized ZnS layer on the surface of polymer template is approximate 2 - 3 nm. High-resolution transmission electron microscopy images reveal that the ZnS particles are single crystal in a zinc blende structure. This method provides a simple, reproducible route at room temperature to prepare assembled hybrid polymer - semiconductor nanocrystal nanocomposites.

The site symmetry of Eu3+ in ZnS : Eu nanoparticle

Nanosized ZnS doped with different concentrations of Eu3+ were prepared and analyzed by x-ray diffraction technique. The experimental results show that ZnS belongs to the cubic structure. From the photoluminescence (PL) emission spectra, it can be seen that the ratio of the emission intensity of Eu3+ 616 nm to that at 590 nm increases as the increasing of Eu3+. This phenomenon reveals that the site symmetry of Eu3+ reduces as the increasing of Eu3+.

Multilayer assemblies of colloidal ZnS doped with silver and polyelectrolytes based on electrostatic interaction

Multilayer assemblies of silver doped ZnS colloid and polycation were fabricated by a self-assembly technique exploiting electrostatic interaction. UV/Vis spectra showed the uniform deposition process and X-ray photoemission spectroscopy (XPS) confirmed the coexistence of silver. It was found that the emission spectra of the silver doped ZnS colloid red-shifted to 528 nm comparing with undoped ZnS colloid. However, the most important finding was that the luminescence intensity of doped ZnS assembled in films was much stronger than that of undoped ZnS in films and that of doped ZnS in the spin-casting film. The mechanism of the enhancement luminescence was discussed. (C) 1998 Elsevier Science S.A. All rights reserved.

自然界中ZnS-CdS完全类质同象系列的发现和初步研究

过去认为在自然界中的Cd只能有限替代ZnS中的Zn。但是，近几年笔者在研究贵州牛角塘镉锌矿床时，经电子探针、扫描电镜和透射电镜等多种方法的研究，发现锌硫化物中的Cd主要以类质同象存在，其含量可从0．8％增至37．93％；镉硫化物中的Zn同样主要以类质同象存在，其含量为2．43％～38．64％。锌硫化物与镉硫化物成渐变的过渡关系，并且Zn与Cd成很好的负相关关系，相关系数达0．99以上，形成ZnS-CdS的完全类质同象系列。这一发现无论在矿物学，还是在地球化学和矿床学上都具有重要的理论意义和实用价值。

PROPERTIES OF ZNS THIN-FILMS PREPARED BY 248-NM PULSED-LASER DEPOSITION

Pulsed laser deposition (PLD) from a hot pressed manganese doped ZnS target using a KrF laser, has produced a high rate deposition method for growing luminescent thin films. Good stoichiometric quality and typical luminescent crystal structures have been observed with a predominant hexagonal phase and little evidence of the cubic phase. The luminescent characteristics were determined by cathodoluminescence and photoluminescence excitation and stable electroluminescence was observed under pulsed dc conditions with a minimum brightness of 150 cd/m2. PLD film characteristics are compared with those observed in radio-frequency sputtered samples.

Detection of ZnS phases in CZTS thin-films by EXAFS

Copper zinc tin sulfide (CZTS) is a promising Earthabundant thin-film solar cell material; it has an appropriate band gap of ~1.45 eV and a high absorption coefficient. The most efficient CZTS cells tend to be slightly Zn-rich and Cu-poor. However, growing Zn-rich CZTS films can sometimes result in phase decomposition of CZTS into ZnS and Cu2SnS3, which is generally deleterious to solar cell performance. Cubic ZnS is difficult to detect by XRD, due to a similar diffraction pattern. We hypothesize that synchrotron-based extended X-ray absorption fine structure (EXAFS), which is sensitive to local chemical environment, may be able to determine the quantity of ZnS phase in CZTS films by detecting differences in the second-nearest neighbor shell of the Zn atoms. Films of varying stoichiometries, from Zn-rich to Cu-rich (Zn-poor) were examined using the EXAFS technique. Differences in the spectra as a function of Cu/Zn ratio are detected. Linear combination analysis suggests increasing ZnS signal as the CZTS films become more Zn-rich. We demonstrate that the sensitive technique of EXAFS could be used to quantify the amount of ZnS present and provide a guide to crystal growth of highly phase pure films.

A study of the white electroluminescence in ZnS:Cu,Pr,Cl phosphors

The method of preparation of ZnS phosphors doped with praseodymium and copper is given. The electroluminescence (EL) spectrum of ZnS:Pr,Cl has two broad bands at 470 and 570 nm. ZnS:Cu,Pr,Cl gives white emission with spectral peaks at 470, 520, 570 and 640 nm. The EL spectra of both types of phosphor exhibit a conspicuous colour shift as the frequency of the excitation voltage is varied. Detailed investigations show that the relative intensities of spectral peaks are strongly dependent on the frequency of the excitation voltage. The colour shift is explained on the basis of the Schon-Klasens model.

Low-voltage driven ZnS:Mn MIS and MISIM thin film electroluminescent devices with Eu2O3 insulator layer

AC thin film electroluminescent devices of MIS and MISIM have been fabricated with a novel dielectric layer of Eu2O3 as an insulator. The threshold voltage for light emission is found to depend strongly on the frequency of excitation source in these devices. These devices are fabricated with an active layer of ZnS:Mn and a novel dielectric layer of Eu2O3 as an insulator. The observed frequency dependence of brightness-voltage characteristics has been explained on the basis of the loss characteristic of the insulator layer. Changes in the threshold voltage and brightness with variation in emitting or insulating film thickness have been investigated in metal-insulator-semiconductor (MIS) structures. It has been found that the decrease in brightness occurring with decreasing ZnS layer thickness can be compensated by an increase in brightness obtained by reducing the insulator thickness. The optimal condition for low threshold voltage and higher stability has been shown to occur when the active layer to insulator thickness ratio lies between one and two.

Effect of chlorine concentration on the spectral characteristics of electroluminescence in ZnS: Cu: Cl phosphor

ZnS: Cu: Cl phosphor prepared under a vacuum firing process is found to give blue electroluminescence with emission peak at 460 nm which remams unaltered with the frequency of the excitation voltage. Addition of excess chlorine in the phosphor gives blue, green and red emission at 460, 520 and 640 run. The intensity of the blue band decreases and It fmally disappears as chlorine concentration is increased. A scheme involving three energy levels attributed to Cu2+, Cu+ and Cl- centres in Zns explains the experimental results completely.