Effect of hydrogen dilution on the deposition of carbon-rich a-SiC:H films by the electron cyclotron resonance method

The deposition of hydrogenated amorphous silicon carbide (a-SiC:H) films from a mixture of silane, acetylene and hydrogen gas using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) process is reported. The variation in the deposition and film characteristics such as the deposition rate, optical band gap and IR absorption as a function of the hydrogen dilution is investigated. The deposition rate increases to a maximum value of about 250 Å min-1 at a hydrogen dilution ratio of about 20 (hydrogen flow (sccm)/acetylene + silane flow (sccm)) and decreases in response to a further increase in the hydrogen dilution. There is no strong dependence of the optical band gap on the hydrogen dilution within the dilution range investigated (10-60) and the optical band gap calculated from the E04 method varied marginally from about 2.85 to 3.17 eV. The room temperature photoluminescence (PL) peak energy and intensity showed a prominent shift to a maximum value of about 2.17 eV corresponding to maximum PL intensity at a moderate hydrogen dilution of about 30. The PL intensity showed a strong dependence on the hydrogen dilution variation.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Competitive adsorption of collagen and bovine serum albumin - effect of the surface wettability

The competitive adsorption of collagen and bovine serum albumin (BSA) on surfaces with varied wettability was investigated with imaging ellipsometry, and ellipsometry. Silane modified silicon surfaces were used as substrates. The results showed that surface wettability had an important effect on protein competitive adsorption. With the decrease of surface wettability, the adsorption of collagen from the mixture solution of collagen and BSA decreased, while the adsorption of BSA increased. (C) 2003 Elsevier B.V. All rights reserved.

硅烷对JP10和煤油点火特性影响的激波管研究

在JP10和煤油点火特性激波管实验的基础上,实验研究了硅烷对这两种典型高碳数碳氢燃料点火特性的影响.在预加热到70℃的激波管上,采用缝合运行条件获得了近7ms的实验时间,将实验延伸至低温区.采用气相色谱分析和高精度真空仪直接测定压力相结合的方法,确定了燃料气相浓度,解决了高碳数碳氢燃料点火激波管实验时由于管壁吸附影响燃料气相浓度确定的困难.实验记录了点火过程中OH自由基发射强度变化,并作为判断点火发生的标志.实验温度范围880～1 800K,压力范围0.16～0.53MPa.当硅烷加入量约为燃料的10%～15%(摩尔比),质量比为2%～3%,观测到明显的点火促进作用.该研究对超燃研究中发动机设计、燃料选择等方面具有直接的工程意义,也可用于检验燃烧化学动力学模型的合理性.

Applications of a Concise and General Strategy for the Syntheses of Transtaganolide and Basiliolide Natural Products

Herein are described the total syntheses of all members of the transtaganolide and basiliolide natural product family. Utilitzation of an Ireland–Claisen rearrangement/Diels–Alder cycloaddition cascade (ICR/DA) allowed for rapid assembly of the transtaganolide and basiliolide oxabicyclo[2.2.2]octane core. This methodology is general and was applicable to all members of the natural product family.

A brief introduction outlines all the synthetic progress previously disclosed by Lee, Dudley, and Johansson. This also includes the initial syntheses of transtaganolides C and D, as well as basiliolide B and epi-basiliolide B accomplished by Stoltz in 2011. Lastly, we discuss our racemic synthesis of basililide C and epi-basiliolide C, which utilized an ICR/DA cascade to constuct the oxabicyclo[2.2.2]octane core and formal [5+2] annulation to form the ketene-acetal containing 7-membered C-ring.

Next, we describe a strategy for an asymmetric ICR/DA cascade, by incorporation of a chiral silane directing group. This allowed for enantioselective construction of the C8 all-carbon quaternary center formed in the Ireland–Claisen rearrangement. Furthermore, a single hydride reduction and subsequent translactonization of a C4 methylester bearing oxabicyclo[2.2.2]octane core demonstrated a viable strategy for the desired skeletal rearrangement to obtain pentacyclic transtaganolides A and B. Application of the asymmetric strategy culminated in the total syntheses of (–)-transtaganolide A, (+)-transtaganolide B, (+)-transtaganolide C, and (–)-transtaganolide D. Comparison of the optical rotation data of the synthetically derived transtaganolides to that from the isolated counterparts has overarching biosynthetic implications which are discussed.

Lastly, improvement to the formal [5+2] annulation strategy is described. Negishi cross-coupling of methoxyethynyl zinc chloride using a palladium Xantphos catalyst is optimized for iodo-cyclohexene. Application of this technology to an iodo-pyrone geranyl ester allowed for formation and isolation of the eneyne product. Hydration of the enenye product forms natural metabolite basiliopyrone. Furthermore, the eneyne product can undergo an ICR/DA cascade and form transtaganolides C and D in a single step from an achiral monocyclic precursor.

Optical and surface properties of hybrid TiO2/ormosil planar waveguide prepared by the sol-gel process

Two kinds of silanes, 3-glycidoxypropyltrimethoxysilane (GLYMO) and 3-trimethoxysililpropylmethacrylate (TMSPM), were used to prepare ormosil waveguide films by the sol-gel method. Thirty percent Ti(OBu)(4) and 70% silane were contained in the precursor sets. The properties of films were measured by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), UV/VIS/NIR spectrophotometer (UV-vis), atomic force microscopy (AFM), m-line and scattering-detection method. The films from GLYMO and TMSPM precursors exhibit similar thickness (2.58 mu m for GLYMO, 2.51 mu m for TMSPM) and refractive index (1.5438 for GLYMO, 1.5392 for TMSPM, lambda=632.8 nm), but the film from TMSPM precursor has higher propagation loss (1.024 dB/cm, lambda=632.8 nm) than the film prepared from GLYMO (0.569 dB/cm, lambda=632.8 nm). Furthermore, the film prepared from TMSPM is easy to be opaque and cracks during coating whereas the same phenomenon was not found for the film prepared with GLYMO. It is confirmed that GLYMO is a better precursor than TMSPM for waveguide film preparation. (C) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Efeito da temperatura de secagem de dois tipos de silano e da supressão ou redução do tempo de condicionamento com ácido hidrofluorídrico na resistência de união entre uma cerâmica de dissilicato de lítio e um cimento resinoso

Este estudo avaliou o efeito de diferentes métodos de silanização e aplicação do ácido hidrofluorídrico (HF) sobre a resistência à microtração de uma cerâmica de dissilicato de lítio a um cimento resinoso. Quarenta blocos de IPS e.max Press /Ivoclar Vivadent (5x5x6mm) foram cimentados a blocos de resina Z250/3M ESPE (5x5x6mm) usando o cimento resinoso RelyX ARC/3M ESPE de acordo com os seguintes métodos de tratamento superficial: G1: 20s de ácido fluorídrico (HF) + silano não hidrolisado Primer-Activactor/Dentsply (SNH) seco à temperatura ambiente; G2: 20s HF + silano pré-hidrolisado RelyX Ceramic-Primer/3M ESPE (SPH) seco à temperatura ambiente; G3: 10s HF + SNH seco com ar quente (50oC-2min); G4: 10sHF + SPH seco com ar quente (50oC-2min); G5: sem ácido, SNH seco com ar quente (50oC-2min); G6: sem ácido, SPH seco com ar quente (50oC-2min); G7: sem ácido, SNH seco à temperatura ambiente; G8: sem ácido, SPH seco à temperatura ambiente. Antes de cada método de silanização, os blocos cerâmicos receberam acabamento com lixas de carbeto de silício (220-600) e limpeza com ácido fosfórico 37% (1min). A cimentação foi realizada com carga vertical de 1kg por 10min. Os conjuntos de cerâmica/cimento/resina foram armazenados em água destilada (37C) por 24 horas e depois seccionados em máquina de corte Isomet 1000 a fim de obter palitos (n = 40) de 1mm2 de área da seção transversal, que foram submetidos ao teste de microtração em máquina de ensaio universal Emic (v = 0,5mm/min). O modo de fratura foi avaliado em microscópio eletrônico de varredura. A análise estatística foi realizada utilizando ANOVA / Dunnett (p-valor = 0,000). As médias MPa e desvio padrão foram: G1-21,5 (8,9) BC; G2-30,5 (7,2) A; G3-19.4 (9.1) BC; G4-24,0 (9,0) B; G5-8.1 (3.2) D; G6 -18,0 (6,2) C; G7-7.8 (2,6) D; G8-6.3 (2,5) D. Grupos 2, 3, 4 e 6 não tiveram falhas prematuras dos palitos contra os grupos 1, 5, 7 e 8, que apresentaram 2,2; 44,4; 75,6 e 33,3% de perdas prematuras, respectivamente. O teste de correlação foi realizado apresentando significância estatística, com valor de -0,736 (p-valor = 0,000), mostrando que, a medida que o percentual de perda prematura aumenta, a média da MPa diminui. Quanto ao modo de fratura, observou-se 44,97% de falhas do tipo mista, 51,70% de falhas do tipo adesiva, 3,33% de falhas do tipo coesiva do cimento. Quando é realizada a supressão do condicionamento com HF como pré-tratamento da superfície cerâmica IPS e.max Press, a aplicação de silano SPH, associada ao seu tratamento térmico, deve ser o método de silanização recomendado, embora os valores mais elevados de resistência de união tenham sido os obtidos quando utilizado o condicionamento com HF por 20s. Quando é realizada a redução do tempo de condicionamento com HF para 10s, a aplicação do silano (SPH ou SNH) deve ser sempre associada ao seu tratamento térmico. O SNH só deve ser usado se as superfícies das cerâmicas IPS e.max Press forem tratadas com HF.

Processos de formação de ligações cruzadas de polietileno de alto peso molecular

No projeto desenvolvido, ligações cruzadas foram formadas no polietileno de alta densidade e alto peso molecular, grade HS5103, através dos processos reticulação por peróxidos e silanos, com o objetivo de se avaliar o efeito da introdução de ligações cruzadas nas propriedades térmicas e mecânicas deste PEAD. Misturas entre o HS5103 e os peróxidos orgânicos, 2,5-Dimetil-2,5-di(terc-butilperoxi)hexano (DHBP) e peróxido de dicumila (DCP), foram produzidas e analisadas para a avaliação do efeito dos tipos de peróxido na reticulação e propriedades do PEAD e para determinação da concentração e do tipo de peróxido a ser utilizado como agente iniciador de reticulação por silano. Ensaios de índice de fluidez (MFI), reometria capilar, extração de polímero por xileno (teor de gel), análise termogravimétrica (TGA), calorimetria diferencial de varredura (DSC) e tração foram realizados para caracterização das misturas com peróxidos. Os resultados indicaram aumento da viscosidade com o aumento da concentração de peróxido, sendo o DHBP o que apresentou maior índice de aumento; não houve mudanças relevantes nas propriedades mecânicas e, ocorreu aumento do grau de cristalinidade, sendo mais significativo nas amostras com DCP. Após avaliação dos resultados citados, para as amostras a serem reticuladas via silano, foi promovida a graftização de diferentes concentrações de viniltrimetóxisilano (VTMS) na presença de 0,01%p/p de DCP com a adição de 0,05%p/p de catalisador, posteriormente a reticulação foi promovida em água. As amostras produzidas foram caracterizadas por ensaios de teor de gel, análise dinâmico-mecânica (DMA), espectroscopia de absorção no infravermelho (FTIR), TGA, ensaios de desgaste por deslizamento e tração. Nas amostras com silano a formação de ligações cruzadas foi gradativa, apresentando de 8% de gel para amostra com 0,5%p/p de VTMS a 57 % para amostra com1,5% p/p de silano, maior concentração utilizada. A análise dinâmico-mecânica (DMA) realizada evidenciou que houve um aumento densidade de ligações cruzadas e do módulo de armazenamento após temperatura de fusão com o teor de silano, concordando com os resultados de teor de gel. As análises de FTIR mostraram que houve a graftização e a formação de ligações cruzadas no PEAD HS5103. Não se observou um aumento significativo para o limite de resistência para o PEAD modificado. E os testes de desgaste por deslizamento indicaram um aumento da resistência ao desgaste das amostras reagidas com VTMS.

Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

Microwave power effects on the properties of phosphorus-doped SiC:H films prepared using ECR-CVD

There has been a growing interest in hydrogenated silicon carbide films (SiC:H) prepared using the electron cyclotron resonance-chemical vapour deposition (ECR-CVD) technique. Using the ECR-CVD technique, SiC:H films have been prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas. The effects of changes in the microwave power (from 150 to 900 W) on the film properties were investigated in a series of phosphorus-doped SiC:H films. In particular, the changes in the deposition rate, optical bandgap, activation energy and conductivity were investigated in conjunction with results from Raman scattering and Fourier transform infra-red (FTIR) analysis. It was found that increase in the microwave power has the effect of enhancing the formation of the silicon microcrystalline phase in the amorphous matrix of the SiC:H films. This occurs in correspondence to a rapid increase in the conductivity and a reduction in the activation energy, both of which exhibit small variations in samples deposited at microwave powers exceeding 500 W. Analysis of IR absorption results suggests that hydrogen is bonded to silicon in the Si-H stretching mode and to carbon in the sp3 CHn rocking/wagging and bending mode in films deposited at higher microwave powers.

A microbeam RBS analysis of low temperature direct-write inkjet deposited copper

Quantitative microbeam Rutherford backscattering (RBS) analysis with a 1.5 MeV 4He+ beam has determined limits on the purity of copper deposited on glass with a novel inkjet process. A tetravinyl silane tetrakisCu(I) 1,1,1,5,5,5-hexafluoroacetylacetonate (TVST[Cu]hfac) complex was heated to 70 °C and jetted onto the glass substrate through a piezoelectric ceramic print head in droplets about 0.5 mm diameter. The substrate temperature was 150 °C. Solid well-formed deposits resulted which have a copper content greater than about 90% by weight. The RBS spectra were analysed objectively using the DataFurnace code, with the assumption that the deposit was CuOx, and the validity of different assumed values of x being tested. The assumptions and the errors of the analysis are critically evaluated. © 2002 Elsevier Science B.V. All rights reserved.

Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure

The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. A series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. The increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. The comparison of the absorption spectra obtained by DC and AC methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. However we found a dramatic discrepancy between the absorption spectra obtained by DC and AC constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. AC constant photocurrent method gives higher absorption coefficient than DC constant photocurrent method in the photon energy range of 1.2-1.7 eV. This result indicates the possibility of crystalline grains contribution to absorption spectra measured by AC constant photocurrent method in silicon films with intermediate crystalline grain volume fraction. (c) 2008 Published by Elsevier B.V.

Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films

Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.