Thin Film Strain Gauges--an Overview

This review gives a brief description of the historical development followed by the origin and the principle of operation of strain gauges. The features of an ideal strain gauge for measurement purposes and the general classes of strain gauges are given. The remaning part is devoted to an important development in strain gauge technology, namely thin film strain gauges. After highlighting the advantages of thin film strain gauges, a review of current data is given. Detailed description of metallic thin film strain gauges is provided and avaliable information on alloy semiconductor and cermet films for their possible use as strain gauge elements has also been included. The importance of ion implantation in tailoring the properties of strain gauges is highlighted. 33 ref.--AA

Polycrystalline Lead Tin Chalcogenide Thin Film Grown by Spray Pyrolysis

PbSnS2 thin film has been prepared for the first time by spray pyrolysis technique on FTO substrate at 570K. The preliminary optical and structural characteristics of the film have been reported. The optical studies showed that the value of the fundamental absorption edge lies at 1.47eV and a low energy absorption band tail has been observed. The prepared film is p- type electrical conductivity, polycrystalline in nature and has an orthorhombic crystal structure. The value of an average grain size of the film is 350Å.

A Compact Model incorporating Quantum Effects for Ultra-Thin-Body Double-Gate MOSFETs

We propose a compact model which predicts the channel charge density and the drain current which match quite closely with the numerical solution obtained from the Full-Band structure approach. We show that, with this compact model, the channel charge density can be predicted by taking the capacitance based on the physical oxide thickness, as opposed to C-eff, which needs to be taken when using the classical solution.

Antimicrobial activity of highly stable silver nano particles embedded in agar-agar matrix as a thin film

Highly stable silver nanoparticles (Ag NPs) in agar-agar (Ag/agar) as inorganic-organic hybrid were obtained as free-standing film by in situ reduction of silver nitrate by ethanol. The antimicrobial activity of Ag/agar film on Escherichia coli (E. coil), Staphylococcus aureus (S. aureus), and Candida albicans (C albicans) was evaluated in a nutrient broth and also in saline solution. In particular, films were repeatedly tested for antimicrobial activity after recycling. UV-vis absorption and TEM studies were carried out on films at different stages and morphological studies on microbes were carried out by SEM. Results showed spherical Ag NPs of size 15-25 nm, having sharp surface plasmon resonance (SPR) band. The antimicrobial activity of Ag/agar film was found to be in the order, C. albicans > E. coil > S. aureus, and antimicrobial activity against C. albicans was almost maintained even after the third cycle. Whereas, in case of E. coil and S. aureus there was a sharp decline in antimicrobial activity after the second cycle. Agglomeration of Ag NPs in Ag/agar film on exposure to microbes was observed by TEM studies. Cytotoxic experiments carried out on HeLa cells showed a threshold Ag NPs concentration of 60 mu g/mL, much higher than the minimum inhibition concentration of Ag NPs (25.8 mu g/mL) for E. coli. The mechanical strength of the film determined by nanoindentation technique showed almost retention of the strength even after repeated cycle. (C) 2010 Elsevier Ltd. All rights reserved.

Thin film amorphous semiconductor microwave switches

Microwave switches operating in the X band were designed and fabricated using amorphous chalcogenide semiconductors of composition GexTeyAsz. Threshold devices were shown to operate as microwave modulators at modulation frequencies of up to 100 MHz. No delay time was observed at the highest frequency although the modulation efficiency decreased above 10 MHz owing to the finite recovery time which was approximately 0.3 × 10−8s. The devices can also be used as variolossers, the insertion loss being 0.5 dB in the OFF state and increasing on switching from 5 dB at 1 mA device current to 18 dB at 100 mA.The behaviour of the threshold switches can be explained in terms of the formation of a conducting filament in the ON state with a constant current density of 2 × 104Acm−2 that is shunted by the device capacitance. The OFF state conductivity σ varies as ωn (0.5 < n < 1) which is characteristic of hopping in localized states. However, there was evidence of a decrease in n or a saturation of the conductivity at high frequencies.As a result of phase separation memory switches require no holding current in the ON state and may be used as novel latching semiconductor phase-shifters.

Electrical switching behavior of amorphous Al23Te77 thin film sample

The electrical switching behavior of amorphous Al23Te77 thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al-Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. (C) 2010 Elsevier B.V. All rights reserved.

Characterization of a large-area PVDF thin film for electro-mechanical and ultrasonic sensing applications

Large-area PVDF thin films have been prepared and characterized for quasi-static and high frequency dynamic strain sensing applications. These films are prepared using hot press method and the piezoelectric phase (beta-phase) has been achieved by thermo-mechanical treatment and poling under DC field. The fabricated films have been characterized for quasi-static strain sensing and the linear strain-voltage relationship obtained is promising. In order to evaluate the ultrasonic sensing properties, a PZT wafer has been used to launch Lamb waves in a metal beam on which the PVDF film sensor is bonded at a distance. The voltage signals obtained from the PVDF films have been compared with another PZT wafer sensor placed on the opposite surface of the beam as a reference signal. Due to higher stiffness and higher thickness of the PZT wafer sensors, certain resonance patterns significantly degrade the sensor sensitivity curves. Whereas, the present results show that the large-area PVDF sensors can be superior with the signal amplitude comparable to that of PZT sensors and with no resonance-induced effect, which is due to low mechanical impedance, smaller thickness and larger area of the PVDF film. Moreover, the developed PVDF sensors are able to capture both A(0) and S-0 modes of Lamb wave, whereas the PZT sensors captures only A(0) mode in the same scale of voltage output. This shows promises in using large-area PVDF films with various surface patterns on structures for distributed sensing and structural health monitoring under quasi-static, vibration and ultrasonic situations. (C) 2010 Elsevier B.V. All rights reserved.

Performance study of a pressure transducer with meandering-path thin film strain gauges

The performance of a pressure transducer with meandering-path thin film strain gauges has been studied. Details of the procedure followed to prepare the thin film strain gauge system on the pressure transducer diaphragm are given. The effect of post-deposition heat treatment on the resistance of the sensing films of the strain gauges and the insulating base layers are discussed. The output of the pressure transducer was studied with various input pressures and excitation voltages. It was found that up to a maximum of 10 V bridge excitation the output was stable and repetitive. The maximum non-linearity and hysteresis observed are ±0.15%, ±0.16% and ±0.14% FSO (full-scale output) for 5, 7.5 and 10 V excitation respectively. Information on the output behaviour of the pressure transducer with temperature is also included.

A novel laser direct write technique for fabrication of thin film MICs

A technique for fabrication of thin-film circuits for microwave integrated circuit (MIC) application is presented. This low-cost fabrication technique utilizes laser direct write of copper patterns on alumina substrates. The method obviates the need for photomasks and photolithography. The film deposition mechanism, deposit film analysis, and MIC fabrication sequence are presented. Performance evaluation of MICs fabricated using this technique is also included

Diaphragm-type sputtered platinum thin film strain gauge pressure transducer

A diaphragm-type pressure transducer with a sputtered platinum film strain gauge (sensing film) has been designed and fabricated. The various steps followed to prepare thin film strain gauges on the diaphragm are described. M-bond 450 adhesive (Measurements Group, USA) has been employed as the insulating layer. A detailed procedure to cure this layer is given. A d.c. sputtering method is employed to prepare the platinum films. This paper also includes details of the strain gauge pattern and its location on the diaphragm. A description of the output characteristics and overall behaviour of the platinum thin film pressure transducer is reported.

Effect of tolerance on the propagation characteristic of a superconducting thin film microstrip delay line

The propagation constant of a superconducting microstrip transmission delay line is evaluated using the spectral domain immitance approach, modelling the superconductor as a surface current having an equivalent surface impedance found through the complex resistive boundary condition. The sensitivity approach is used to study the beta variations with substrate parameters and film characteristics. Results show that the surface impedance does not have much influence on beta sensitivities with respect to epsilon r, W and h. However, it can be observed that the surface impedance plays a crucial role in determining the optimum design.

The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si3N4 (Si4+) but also in the intermediate nitridation states with one (Si1+) or three (Si3+) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si1+, Si3+, and Si4+ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si4+ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si3N4 by molecular beam epitaxy (MBE). (C) 2010 Elsevier B.V. All rights reserved.

Critical exponent of the electrical conductivity in the paracoherence region of a thin film of YBa2Cu3O7?x

Critical exponent of the electrical conductivity in the paracoherence region (gamma) of the high temperature superconductor YBa2Cu3O7-x (YBCO) has been estimated for high quality thin film on ZrO2 substrate prepared by high pressure oxygen sputtering. High energy ion irradiation was carried out using 100 MeV O-16(7+) ions at liquid nitrogen to see the effects of disorder on the value of the exponent. The critical exponent from a value of about 2 to 1.62 upon irradiation. Studies were also carried film to see the effect of ageing and annealing.

Sputter deposited LiPON thin films from powder target as electrolyte for thin film battery applications

Lithium phosphorus oxynitride (LiPON) thin films as solid electrolytes were prepared by reactive radio frequency (rf) magnetron sputtering from Li3PO4 powder compact target. High deposition rates and ease of manufacturing powder target compared with conventional ceramic Li3PO4 targets offer flexibility in handling and reduce the cost associated. Rf power density varied from 1.7 Wcm(-2) to 3 Wcm(-2) and N-2 flow from 10 to 30 sccm for a fixed substrate to target distance of 4 cm for best ionic conductivity. The surface chemical analysis done by X-ray photoelectron spectroscopy showed incorporation of nitrogen into the film as both triply, NE and doubly. Nd coordinated form. With increased presence of NE, ionic conductivity of LiPON was found to be increasing. The electrochemical impedance spectroscopy of LiPON films confirmed an ionic conductivity of 1.1 x 10(-6) Scm(-1) for optimum rf power and N-2 flow conditions. (C) 2011 Elsevier B.V. All rights reserved.