990 resultados para Tunnel magnetoresistance


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In this letter we report large magnetoresistance (MR) in ceramic samples of La1?xSrxMnO3 (0.1?x?0.4) in the temperature range 4.2 K?T?350 K in fields up to 6 T. We find that a large negative and isotopic MR exists for the whole composition range studied and the absolute value of resistivity change on application of magnetic field is more for samples with lower x which have higher resistivity. We find that the large MR occurs in the ferromagnetic state only and MR has a close relation with the magnetization M. © 1995 American Institute of Physics.

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We present a comprehensive study of magnetoresistance (MR) of the crystalline pseudobinary ?-phase Fe alloy series FexNi80-xCr20 (50?x?66). This alloy series shows exotic magnetic phases as the composition (x) is varied. It has a critical composition for ferromagnetism at x=xc?59�60. MR was measured in the temperature range 1.7�110 K and up to a field of 7 T. The observed MR was small and the change was ?1%. The temperature dependence of MR was found to contain a positive and a negative contribution. The positive term was found to be ?H2 and it dominates at high field and high temperatures. We explain this as a manifestation of Kohler�s rule. The negative MR was found to have a quadratic dependence on magnetization M. The magnitude of the negative MR reaches a maximum as x?xc.

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The unusual magnetoresistance (MR) behavior in Sr2FeMoO6, recently termed as spin-valve-type MR (SVMR), presents several anomalies that are little understood so far. The difficulty in probing the origin of this phenomenon, arising from the magnetic property of only a small volume fraction of the ferromagnetic bulk, is circumvented in the present study by the use of ac susceptibility measurements that are sensitive to the slope rather than the magnitude of the magnetization. The present study unravels a spin-glass (SG) like surface layer around each soft ferromagnetic (FM) grain of Sr2FeMoO6. It is also observed that there is a very strong exchange coupling between the two, generating ``exchange bias'' effect, which consequently creates the ``valve'', responsible for the unusual MR effects. Copyright (C) EPLA, 2011

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We report a study of the magnetoresistance (MR) of the metallic perovskite oxide LaNiO3-delta as a function of the oxygen stoichiometry delta (delta less than or equal to 0.14), magnetic field (H less than or equal to 6 T) and temperature (1.5 K less than or equal to T less than or equal to 25 K). We find a strong dependence of the nature of the MR on the oxygen stoichiometry. The MR at low temperatures changes from positive to negative as the sample becomes more oxygen deficient (i.e. delta increases). Some of the samples, which are more resistive, show resistivity minima at T-min approximate to 20 K. We find that in these samples the MR is positive for T > T-min and negative for T < T-min. We conclude that in the absence of strong magnetic interaction, the negative MR in these oxides can arise from weak-localization effects.

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Granular alloys of Cu with FeCo were prepared by the melt-spinning technique. The alloy was characterized by x-ray, transmission electron microscopy, vibrating sample magnetometer, and magnetoresistance measurements. The alloys were heat treated for different temperatures to optimize the magnetoresistance properties. Structural characterization reveals that the FeCo phase initially precipitates out as fcc and later transforms to the bcc structure by martensitic transformation. It is seen that the trend in the magnetoresistance properties is different for the measurements carried out at room temperature and 4.2 K. This has been attributed to the transformation of fine fcc precipitates to the bcc structure during the low temperature measurements. It is seen that the presence of fine particles causes an increase in the field for saturation and is not suitable for applications where moderate field giant magnetoresistance is required. (C) 1999 American Institute of Physics. [S0021-8979(99)08317-6].

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The oxygen content of La0.5Ca0.5MnOy was tuned by annealing the samples at high temperatures in flowing nitrogen with graphite powder nearby. The reduction of oxygen content has dramatic effect on the electrical transport and magnetic properties. The samples with y=2.983, 2.83, and 2.803 show an insulator-metal transition, and an unusual temperature and magnetic-field dependence of the magnetoresistance. The paramagnetic-ferromagnetic transition also shifts to lower temperatures and the antiferromagnetic transition at lower temperature is suppressed. The results are discussed in terms of the effect of oxygen vacancies on the various properties of La0.5Ca0.5MnOy. (C) 2002 American Institute of Physics.

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A three-component accelerometer balance system is used to study the drag reduction effect of an aerodisc on large angle blunt cones flying at hypersonic Mach numbers. Measurements in a hypersonic shock tunnel at a freestream Mach number of 5.75 indicate more than 50% reduction in the drag coefficient for a 120degrees apex angle blunt cone with a forward facing aerospike having a flat faced aerodisc at moderate angles of attack. Enhancement of drag has been observed for higher angles of attack due to the impingement of the flow separation shock on the windward side of the cone. The flowfields around the large angle blunt cone with aerospike assembly flying at hypersonic Mach numbers are also simulated numerically using a commercial CFD code. The pressure and density levels on the model surface, which is under the aerodynamic shadow of the flat disc tipped spike, are found very low and a drag reduction of 64.34% has been deduced numerically.

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La0.67Ba0.33MnO3 (LBMO) thin film is deposited on a 36.7degrees SrTiO3 bicrystal substrate using laser ablation technique. A microbridge is created across bicrystal grain boundary and its characteristics are compared with a microbridge on the LBMO film having no grain boundary. Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature T > 175 K. At low temperature, I-V characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of temperature dependence of dynamic conductance-voltage characteristics of the bicrystal grain boundary indicates that at low temperatures (T < 175 K) carrier transport across the grain boundary in LBMO film is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures (T > 175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip scattering process.

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In the present study, KBiO(3) is synthesized by a standard oxidation technique while LiBiO(3) is prepared by hydrothermal method. The synthesized catalysts are characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), BET surface area analysis and Diffuse Reflectance Spectroscopy (DRS). The XRD patterns suggest that KBiO(3) crystallizes in the cubic structure while LiBiO(3) crystallizes in orthorhombic structure and both of these adopt the tunnel structure. The SEM images reveal micron size polyhedral shaped KBiO(3) particles and rod-like or prismatic shape particles for LiBiO(3). The band gap is calculated from the diffuse reflectance spectrum and is found to be 2.1 eV and 1.8 eV for KBiO(3) and LiBiO(3), respectively. The band gap and the crystal structure data suggest that these materials can be used as photocatalysts. The photocatalytic activity of KBiO(3) and LiBiO(3) are evaluated for the degradation of anionic and cationic dyes, respectively, under UV and solar radiations.

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Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.