985 resultados para Thermal activation


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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Diese Arbeit beschreibt zum ersten Mal die kovalente Verknüpfung organischer Moleküle auf einer Isolatoroberfläche, motiviert im Hinblick auf die Nutzung der Synthesemethode für die molekulare Elektronik und verwandte Anwendungen. Durch die Verwendung der Nichtkontakt-Rasterkraftmikroskopie und der Kelvinprobe-Mikroskopie bei Raumtemperatur wurden grundlegende molekulare Prozesse der Wechselwirkungen zwischen Molekülen und der Calcit(10.4) Oberfläche sowie die chemische Reaktivität der Moleküle auf der Oberfläche analysiert. Das Zusammenspiel zwischen intermolekularen und Molekül-Oberfläche Wechselwirkungen zeigt sich für Biphenyl-4,4'-dicarbonsäure (BPDCA) durch die Koexistenz zweier unterschiedlicher molekularer Strukturen, die einen Einblick in die treibenden Kräfte der molekularen Selbstorganisation bieten. Die sehr ausgeprägte Reihenstruktur basiert auf der optimalen geometrischen Struktur der BPDCA Moleküle zu den Abmessungen des Substrats, während die zweite Struktur durch Wasserstoffbrücken zwischen den Molekülen gekennzeichnet ist. Der Deprotonierungsvorgang von 2,5-Dihydroxybenzoesäure (DHBA)-Molekülen auf Calcit wird bei Zimmertemperatur gezeigt. Zwei Phasen werden beobachtet, die nach Aufbringen der Moleküle koexistieren. Mit der Zeit geht eine bulk-ähnliche Phase in eine stabile, dicht gepackte Phase über. Der Übergang wird durch Betrachtung des Protonierungszustands der Moleküle erklärt. Die bulk-ähnliche Phase benötigt Wasserstoffbrückbindungen zur Strukturbildung. Werden die Moleküle deprotoniert, so wird die resultierende dicht gepackte Phase durch die elektrostatische Wechselwirkung der deprotonierten Carboxylatgruppen mit den Oberflächen-Calciumkationen stabilisiert. 4-Iodbenzoesäure (IBA)-Moleküle bilden auf Calcit nur Inseln an Stufenkanten, was auf die schwache Molekül-Oberflächen-Wechselwirkung zurückzuführen ist. Für einen stärkeren Einfluss des Substrats durchlaufen die Moleküle einen kontrollierten Übergangsschritt vom protonierten zum deprotonierten Zustand. Im deprotonierten Zustand nehmen die Moleküle eine wohldefinierte Adsorptionsposition auf dem Substrat ein. Die deprotonierte Säuregruppe wird ausgenutzt, um die Desorption der halogensubstituierten Benzoesäure-Moleküle bei der thermischer Aktivierung für die Vernetzungsreaktion zu vermeiden. Darüber hinaus wird die Carboxylatgruppe als starker Elektronendonor verwendet um die Phenyl-Halogen-Bindung zu schwächen und somit die homolytische Spaltung dieser Bindung auch bei moderaten Temperaturen zu ermöglichen. Diesem Konzept folgend ist die erste erfolgreiche kovalente Verknüpfung von 2,5-Diiod-benzoesäure, 2,5-Dichlorbenzoesäure, 3,5-Diiod Salicylsäure und 4-Iod-benzoesäure zu durchkonjugierten molekularen Drähten, Zick-Zack-Strukturen sowie Dimere gezeigt durch Ausnutzen von unterschiedlichen Substitutionsposition sowie Ändern der Anzahl der substituierten Halogenatome. Aufbauend auf diesem Erfolg, wird eine zweistufige Vernetzungsreaktion vorgestellt. Zum Induzieren der ortsspezifischen und sequentiellen kovalenten Verknüpfung wird ein Ausgangsmolekül gewählt, das sowohl eine Bromphenyl als auch eine Chlorphenyl Gruppe mit unterschiedlichen Dissoziationsenergien für die homolytische Spaltung besitzt. Die Reaktionsstellen und sequentielle Reihenfolge für die Reaktion sind somit in der molekularen Struktur einkodiert und bisher unerreichte Reaktionspfade können mithilfe der kovalente Verknüpfung organischer Moleküle auf einer Isolatoroberfläche beschritten werden.

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The PhD activity described in this Thesis was focused on the study of metal-oxide wide-bandgap materials, aiming at fabricating new optoelectronic devices such as solar-blind UV photodetectors, high power electronics, and gas sensors. Photocurrent spectroscopy and DC photocurrent time evolution were used to investigate the performance of prototypes under different atmospheres, temperatures and excitation wavelengths (or dark conditions). Cathodoluminescence, absorption spectroscopy, XRD and SEM were used to assess structural, morphologic, electrical and optical properties of materials. This thesis is divided into two main sections, each describing the work done on a different metal-oxide semiconductor. 1) MOVPE-grown Ga2O3 thin films for UV solar-blind photodetectors and high power devices The semiconducting oxides, among them Ga2O3, have been employed for several decades as transparent conducting oxide (TCO) electrodes for fabrication of solar cells, displays, electronic, and opto-electronic devices. The interest was mainly confined to such applications, as these materials tend to grow intrinsically n-type, and attempts to get an effective p-type doping has consistently failed. The key requirements of TCO electrodes are indeed high electrical conductivity and good transparency, while crystallographic perfection is a minor issue. Furthermore, for a long period no high-quality substrates and epi-layers were available, which in turn impeded the development of a truly full-oxide electronics. Recently, Ga2O3 has attracted renewed interest, as large single crystals and high-quality homo- and hetero-epitaxial layers became available, which paved the way to novel application areas. Our research group spent the last two years in developing a low temperature (500-700°C) MOVPE growth procedure to obtain thin films of Ga2O3 on different substrates (Dept. of Physics and IMEM-CNR at UNIPR). We obtained a significant result growing on oriented sapphire epitaxial films of high crystalline, undoped, pure phase -Ga2O3 (hexagonal). The crystallographic properties of this phase were investigated by XRD, in order to clarify the lattice parameters of the hexagonal cell. First design and development of solar blind UV photodetectors based on -phase was carried out and the optoelectronic performance is evaluated by means of photocurrent spectroscopy. The UV-response is adequately fast and reliable to render this unusual phase a subject of great interest for future applications. The availability of a hexagonal phase of Ga2O3 stable up to 700°C, belonging to the same space group of gallium nitride, with high crystallinity and tunable electrical properties, is intriguing in view of the development of nitride-based devices, by taking advantage of the more favorable symmetry and epitaxial relationships with respect to the monoclinic β-phase. In addition, annealing at temperatures higher than 700°C demonstrate that the hexagonal phase converts totally in the monoclinic one. 2) ZnO nano-tetrapods: charge transport mechanisms and time-response in optoelectronic devices and sensors Size and morphology of ZnO at the nanometer scale play a key role in tailoring its physical and chemical properties. Thanks to the possibility of growing zinc oxide in a variety of different nanostructures, there is a great variety of applications, among which gas sensors, light emitting diodes, transparent conducting oxides, solar cells. Even if the operation of ZnO nanostructure-based devices has been recently demonstrated, the mechanisms of charge transport in these assembly is still under debate. The candidate performed an accurate investigation by photocurrent spectroscopy and DC-photocurrent time evolution of electrical response of both single-tetrapod and tetrapod-assembly devices. During the research done for this thesis, a thermal activation energy enables the performance of samples at high temperatures (above about 300°C). The energy barrier is related to the leg-to-leg interconnection in the assembly of nanotetrapods. Percolation mechanisms are responsible for both the very slow photo-response (minutes to hours or days) and the significant persistent photocurrent. Below the bandgap energy, electronic states were investigated but their contribution to the photocurrent are two-three order of magnitude lower than the band edge. Such devices are suitable for employ in photodetectors as well as in gas sensors, provided that the mechanism by which the photo-current is generated and gas adsorption on the surface modify the conductivity of the material are known.

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This study is focused on the synthesis and application of glycerol-based carbon materials (GBCM200, GBCM300 and GBCM350) as adsorbents for the removal of the antibiotic compounds flumequine and tetracycline from aqueous solution. The synthesis enrolled the partial carbonization of a glycerol-sulfuric acid mixture, followed by thermal treatments under inert conditions and further thermal activation under oxidative atmosphere. The textural properties were investigated through N2 adsorption–desorption isotherms, and the presence of oxygenated groups was discussed based on zeta potential and Fourier transform infrared (FTIR) data. The kinetic data revealed that the equilibrium time for flumequine adsorption was achieved within 96 h, while for tetracycline, it was reached after 120 h. Several kinetic models, i.e., pseudo-first order, pseudo-second order, fractional power, Elovich and Weber–Morris models, were applied, finding that the pseudo-second order model was the most suitable for the fitting of the experimental kinetic data. The estimated surface diffusion coefficient values, Ds, of 3.88 and 5.06 10 14 m2 s 1, suggests that the pore diffusion is the rate limiting step of the adsorption process. Finally, as it is based on SSE values, Sips model well-fitted the experimental FLQ and TCN adsorption isotherm data, followed by Freundlich equation. The maximum adsorption capacities for flumequine and tetracycline was of 41.5 and 58.2 mg g 1 by GBCM350 activated carbon.

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Charge transport and dielectric measurements were carried out on compacted powder and single-crystal samples of bistable RbxMn[Fe(CN)6]y·zH2O in the two valence-tautomeric forms (MnIIFeIII and MnIIIFeII) as a function of temperature (120-350 K) and frequency (10-2-106 Hz). The complex conductivity data reveal universal conductivity behavior and obey the Barton-Nakajima-Namikawa relationship. The charge transport is accompanied by dielectric relaxation that displays the same thermal activation energy as the conductivity. Surprisingly, the activation energy of the conductivity was found very similar in the two valence-tautomeric forms (0.55 eV), and the conductivity change between the two phases is governed mainly by the variation of the preexponential factor in each sample. The phase transition is accompanied by a large thermal hysteresis of the conductivity and the dielectric constant. In the hysteresis region, however, a crossover occurs in the charge transport mechanism at T < 220 K from an Arrhenius-type to a varying activation energy behavior, conferring an unusual “double-loop” shape to the hysteresis.

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Films of amorphous silicon (a-Si) were prepared by r.f. sputtering in a Ne plasma without the addition of hydrogen or a halogen. The d.c. dark electrical conductivity, he optical gap and the photoconductivity of the films were investigated for a range of preparation conditions, the sputtering gas pressure, P, the target-substrate spacing, d, the self-bias voltage, Vsb, on the target and the substrate temperature, Ts. The dependence of the electrical and optical properties on these conditions showed that various combinations of P, d and Vsb, at a constant Ts, giving the same product (Pd/V sb) result in films with similar properties, provided that P, d and Vsb remain vithin a certain range. Variation of Pd/Vsb between about 0.2 and 0.8 rrTorr.cm!V varied the dark conductivity over about 4 orders of magnitude, the optical gap by 0.5 eV and the photoconductivity over 4-5 orders of magnitude. This is attributed to controlling the density-of-states distribution in the mobility gap. The temperature-dependence of photoconductivity and the photoresponse of undoped films are in support of this conclusion. Films prepared at relatively high (Pd/Vsb) values and Ts=300 ºc: exhibited low dark-conductivity and high thermal activation energy, optical gap and photoresponse, characteristic properties of a 'low density-of-states material. P-type doping with group-Ill elements (Al, B and Ga) by sputtering from a composite target or from a predoped target (B-.doped) was investigated. The systematic variation of room-temperature conductivity over many orders of magnitude and a Fermi-level shift of about 0.7 eV towards the valence-band edge suggest that substitutional doping had taken place. The effects of preparation conditions on doping efficiency were also investigated. The post-deposition annealing of undoped and doped films were studied for a temperature range from 250 ºC to 470 ºC. It was shown that annealing enhanced the doping efficiency considerably, although it had little effect on the basic material (a-Si) prepared at the optimum conditions (Pd/Vsb=0.8 mTorr.cm/V and Ts=300 $ºC). Preliminary experiments on devices imply potential applications of the present material, such as p-n and MS junctions.

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CuAlO2 has been examined as a potential luminescent material by substituting Eu for Al cations in the delafossite structure. CuAlO2:Eu3+ nanofibers have been prepared via electrospinning for the ease of mitigating synthesis requirements and for future optoelectronics and emerging applications. Single-phase CuAlO2 fibers could be obtained at a temperature of 1100 °C in air. The Eu was successfully doped in the delafossite structure and two strong emission bands at ~405 and 610 nm were observed in the photoluminescence spectra. These bands are due to the intrinsic near-band-edge transition of CuAlO2 and the f-f transition of the Eu3+ activator, respectively. Further electrical characterization indicated that these fibers exhibit semiconducting behavior and the introduction of Eu could act as band-edge modifiers, thus changing the thermal activation energies. In light of this study, CuAlO2:Eu3+ fibers with both strong photoluminescence and p-type conductivity could be produced by tailoring the rare earth doping concentrations.

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The thermal activation of a silica-stabilized γ-Alumina impacts positively on the oxidative dehydrogenation of ethylbenzene (EB) to styrene (ST). A systematic thermal study reveals that the transition from γ-alumina into transitional phases at 1050C leads to an optimal enhancement of both conversion and selectivity under pseudo-steady state conditions; where active and selective coke have been deposited. The effect is observed in the reaction temperature range of 450-475C at given operation conditions resulting in the highest ST yield, while at 425C this effect is lost due to incomplete O2 conversion. The conversion increase is ascribed to the ST selectivity improvement that makes more O2 available for the main ODH reaction. The fresh aluminas and catalytically active carbon deposits on the spent catalysts were characterized by gas adsorption (N 2 and Ar), acidity evaluation by NH3-TPD and pyridine adsorption monitored by FTIR, thermal and elemental analyses, solubility in CH2Cl2 and MALDI-TOF to correlate the properties of both phases with the ST selectivity enhancement. Such an increase in selectivity was interpreted by the lower reactivity of the carbon deposits that diminished the COx formation. The site requirements of the optimal catalyst to create the more selective coke is related to the higher density of Lewis sites per surface area, no mixed Si-Al Brønsted sites are formed while the acid strength of the formed Lewis sites is relatively weaker than those of the bare alumina. © 2013 Elsevier B.V. All rights reserved.

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This paper reports an investigation on the effect of thermal activation of kaolinite. It is well known that during calcinations (400-650 degrees C), kaolinite loses the OH lattice water and is transformed into metakaolinite or amorphous material. Arsenic is trace element that is toxic to animals including humans. The adsorption of arsenic on kaolinite was investigated at varying pH and thermal pretreatment. Calcination of sample is carried out at 650 degrees C for 3 h. The decomposition of kaolinite is recorded using methods of thermal analysis. The resultant product is identified by XRD. Laboratory experiments were conducted examining the effect of arsenic by thermally modified kaolinite. The Langmuir isotherm was used to describe arsenite and arsenate sorption by the calcined kaolinite. The equilibrium parameters used were based on experimental data obtained for the dynamic adsorption process of arsenic. Removal of arsenate using natural kaolinite was satisfactory, whereas arsenic was not removed by adsorption with thermally modified kaolinite. Moreover, the adsorption of arsenic by kaolinite and metakaolinite decreases with increasing pH.

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The clay mineral attapulgite is a group of hormitas, which has its structures formed by microchannels, which give superior technological properties classified the industrial clays, clays of this group has a very versatile range of applications, ranging from the drilling fluid for wells oil has applications in the pharmaceutical industry. Such properties can be improved by activating acid and / or thermal activation. The attapulgite when activated can improve by up to 5-8 times some of its properties. The clay was characterized by X-ray diffraction, fluorescence, thermogravimetric analysis, differential thermal analysis, scanning electron microscopy and transmission electron microscopy before and after chemical activation. It can be seen through the results the efficiency of chemical treatment, which modified the clay without damaging its structure, as well as production of polymer matrix composites with particles dispersed atapugita

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It is shown that thermally stimulated photocurrent measurements provide a simple and effective method of determining the activation energy of thermal regeneration rate of EL2 from the metastable state to the normal state in undoped semi‐insulating GaAs. The thermal regeneration rate r is found to be 2.5×108 exp(−0.26 eV/kT) s−1.

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An improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon films prepared by PECVD. The solid-phase crystallization and dopant activation process can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/l-s 850 degrees C thermal pulse. A mean grain size more than 1000 Angstrom and a Hall mobility of 24.9 cm(2)/V s are obtained in the crystallized films. The results indicate that this annealing method possesses the potential for fabricating large-area and good-quality polycrystalline silicon films on low-cost glass substrate. (C) 1998 Elsevier Science B.V. All rights reserved.