High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy

High-quality GaNAs/GaAs quantum wells with high substitutional N concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate in a range of 0.125-1 mu m/h. No phase separation is observed and the GaNAs well thickness is limited by the critical thickness. Strong room-temperature photoluminescence with a record long wavelength of 1.44 mu m is obtained from an 18-nm-thick GaN0.06As0.94/GaAs quantum well. (C) 2005 American Institute of Physics.

Prediction and suppression of strong dispersive coupling in microracetrack channel drop filters

For a four-port microracetrack channel drop filter, unexpected transmission characteristics due to strong dispersive coupling are demonstrated by the light tunneling between the input-output waveguides and the resonator, where a large dropping transmission at off-resonance wavelengths is observed by finite-difference time-domain simulation. It causes a severe decline of the extinction ratio and finesse. An appropriate decrease of the coupling strength is found to suppress the dispersive coupling and greately increase the extinction ratio and finesse, a decreased coupling strength can be realized by the application of an asymmetrical coupling waveguide structure. In addition, the profile of the coupling dispersion in the transmission spectra can be predicted based on a coupled mode theory analysis of an equivalent system consisting of two coupling straight waveguides. The effects of structure parameters on the transmission spectra obtained by this method agree well with the numerical results. It is useful to avoid the strong dispersive coupling region in the filter design. (c) 2007 Optical Society of America.

Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

Stoichiometric ZnSe nanowires have been synthesized through a vapor phase reaction of zinc and selenium powder on the (100) silicon substrate coated with a gold film of 2 nm in thickness. The microstructures and the chemical compositions of the as-grown nanowires have been investigated by means of electron microscopy, the energy dispersive spectroscopy, and Raman spectroscopy. The results reveal that the as-grown materials consist of ZnSe nanowires with diameters ranging from 5 to 50 nm. Photoluminescence of the sample demonstrates a strong green emission from room temperature down to 10 K. This is attributed to the recombination of electrons from conduction band to the medium deep Au acceptors. (C) 2003 American Institute of Physics.

Comparison of modal gain and material gain for strong guiding slab waveguides

The relations between the gain factor, defined as the ratio of modal gain to material gain, and the optical confinement factor are discussed for the TE and TM modes in slab waveguides. For the TE modes, the gain factor is larger than the optical confinement factor, due to the zigzag propagation of the modal light ray in the core layers. For the TM modes, the existence of a nonzero electric field in the propagation direction results in a more complicated relation of the gain factor and the confinement factor. For an air-Si-SiO2 strong slab waveguide, the numerical results show that the modal gain can be larger than the material gain and the higher-order transverse mode can have an even larger modal gain than the fundamental mode, The efficiency of waveguiding photodetectors can be improved by applying the modal gain or loss characteristics in strong waveguides.

A study of strong photoluminescence of SiOx : H films

We have examined photoluminescence (PL), IR absorption and Raman spectra of a series of hydrogenated amorphous silicon oxide (a-SiOx:H, (0 < x < 2)) films fabricated by plasma enhanced chemical vapor deposition (PECVD). Two strong luminescence bands were observed at room temperature, one is a broad envelope comprising a main peak around 670 nm and a shoulder at 835 nm, and the other, peaked around 850 nm; is found only after being annealed up to 1170 degrees C in N-2 environment. In conjunction with IR and Raman spectra, the origins of the two luminescent bands and their annealing behaviors are discussed on the basis of quantum confinement effects.

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer.

Efficient inverted top-emitting organic light-emitting diodes using ultrathin MoO3/C-60 bilayer structure to enhance hole injection

Efficient inverted top-emitting organic light-emitting diodes with aluminum (Al) as both the cathode and semitransparent anode are investigated. It is found that introduction of the ultrathin molybdenum trioxide (MoO3)/fullerene (C-60) bilayer structure between the low work function Al top anode and the hole-transporting layer dramatically enhances the device performance as compared to the devices with sole MoO3 or C-60 buffer layer. The ultraviolet photoemission spectroscopy and x-ray photoelectron spectroscopy indicate that the hole injection barrier between Al anode and hole-transporting layer is effectively reduced via strong dipole effect at Al/MoO3/C-60 interfaces with its direction pointing from Al to C-60.

Simple and Efficient Near-Infrared Organic Chromophores for Light-Emitting Diodes with Single Electroluminescent Emission above 1000 nm

A series of NIR organic chromophores with donor-pi-acceptor-pi-donor structure are synthesized. Good thermal stability and strong photoluminescence in solid state render them suitable for application in light-emitting diodes. Exclusive near-infrared emission at 1080 nm with external quantum efficiency of 0.28% is obtained from the nondoped OLEDs. The longest electroluminescence wave-length is 1220 nm.

Sr3Al2O5Cl2:Ce3+,Eu2+: A potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes

The Sr3Al2O5Cl2:Ce3+,Eu2+ phosphors were prepared by solid state reaction. The obtained phosphors exhibit a strong absorption in the UV-visible region and have two intense emission bands at 444 and 609 nm. The energy transfer from the Ce3+ to Eu2+ ions was observed, and the critical distance has been estimated to be about 24.5 A by spectral overlap method. Furthermore, the developed phosphors can generate lights from yellow-to-white region under the excitation of UV radiation by appropriately tuning the activator content, indicating that they have potential applications as an UV-convertible phosphor for white light emitting diodes.

Solution-processible multi-component cyclometalated iridium phosphors for high-efficiency orange-emitting OLEDs and their potential use as white light sources

The synthesis and photophysical studies of several multifunctional phosphorescent iridium(III) cyclometalated complexes consisting of the hole-transporting carbazole and fluorene-based 2-phenylpyridine moieties are reported. All of them are isolated as thermally and morphological stable amorphous solids. Extension of the pi-conjugation through incorporation of electron- pushing carbazole units to the fluorene fragment leads to bathochromic shifts in the emission profile, increases the highest oc- cupied molecular orbital levels and improves the charge balance in the resulting complexes because of the propensity of the carbazole unit to facilitate hole transport. These iridium-based triplet emitters give a strong orange phosphorescence light at room temperature with relatively short lifetimes in the solution phase. The photo- and electroluminescence properties of these phosphorescent carbazolylfluorene-functionalized metalated complexes have been studied in terms of the coordinating position of carbazole to the fluorene unit. Organic light-emitting diodes (OLEDs) using these complexes as the solution-processed emissive layers have been fabricated which show very high efficiencies even without the need for the typical hole-transporting layer.I These orange-emitting devices can produce a maximum current efficiency of similar to 30 cd A(-1) corresponding to an external quantum efficiency of similar to 10 % ph/el (photons per electron) and a power efficiency of similar to 14 Im W-1.

Synthesis and characterization of white-light-emitting polyfluorenes containing orange phosphorescent moieties in the side chain

Two orange phosphorescent iridium complex monomers, 9-hexyl-9-(iridium (III)bis(2-(4'-fluorophenyl)-4-phenylquinoline-N, C-2')(tetradecanedionate-11,13))-2,7-dibromofluorene (Br-PIr) and 9-hexyl-9-(iridium(III)bis(2-(4'-fluorophenyl)-4-methylquinoline-N, C-2')(tetradecanedionate-11,13))-2,7-dibromofluorene (Br-MIr), were successfully synthesized. The Suzuki polycondensation of 2,7-bis(trimethylene boronate)-9,9-dioctylfluorene with 2,7-dibromo-9,9-dioetylfluorene and Br-Plr or Br-MIr afforded two series of copolymers, PIrPFs and MIrPFs, in good yields, in which the concentrations of the phosphorescent moieties were kept small (0.5-3 mol % feed ratio) to realize incomplete energy transfer. The photoluminescence (PL) of the copolymers showed blue- and orange-emission peaks. A white-light-emitting diode with a configuration of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/PIr05PF (0.5 mol % feed ratio of Br-PIr)/Ca/Al exhibited a luminous efficiency of 4.49 cd/A and a power efficiency of 2.35 lm/W at 6.0 V with Commission Internationale de L'Eclairage (CIE) coordinates of (0.46, 0.33). The CIE coordinates were improved to (0.34, 0.33) when copolymer MIr10PF (1.0 mol % feed ratio of Br-MIr) was employed as the white-emissive layer. The strong orange emission in the electroluminescence spectra in comparison with PL for these kinds of polymers was attributed to the additional contribution of charge trapping in the phosphorescent dopants.

Highly efficient iridium(III) complexes with diphenylquinoline ligands for organic light-emitting diodes: Synthesis and effect of fluorinated substitutes on electrochemistry, photophysics and electroluminescence

A series of novel cyclometalated iridium(III) complexes bearing 2,4-diphenylquinoline ligands with fluorinated substituent were prepared and characterized by elemental analysis, NMR and mass spectroscopy. The cyclic voltammetry, absorption, emission and electroluminescent properties of these complexes were systematically investigated. Electrochemical studies showed that the oxidation of the fluorinated complexes occurred at more positive potentials (in the range 0.57-0.69 V) than the unfluorinated complex 1 (0.42 V). In view of the energy level, the lowering of the LUMO by fluorination is significantly less than that of the HOMO. The weak and low energies absorption bands in the range of 300-600 nm are well resolved, likely associated with MLCT and (3)pi-pi* transitions. These complexes show strong orange red emission both in the solution and solid state. The emission maxima of the fluorinated complexes showed blue shift by 9, 24 and 15 nm for 2, 3 and 4, respectively, with respect to the unfluorinated analogous 1. Multilayered organic light-emitting diodes (OLEDs) were fabricated by using the complexes as dopant materials. Significantly higher performance and lower turn-on voltage were achieved using the fluorinated complexes as the emitter than that using the unfluorinated counterpart 1 under the same doping level.

Reduced ambient reflection of organic light-emitting diodes by utilizing multilayer low-reflection cathodes

Ambient reflection of organic light-emitting diodes (OLEDs) is reduced by utilizing a multilayer low-reflection cathode. The low-reflection cathode structure consists of a semitransparent cathode layer, a transparent spacing layer and a high reflective layer. Metals with different optical properties, including silver (Ag) and samarium (Sm), are used as the semitransparent cathode layer, tris(8-quinolinolato) aluminium (Alq(3)) and aluminium (Al) are used as the spacing layer and high reflective layer, respectively. The incident ambient light could be reduced by the cathode structure via destructive optical interference. It is found that the Ag/Alq(3)/Al cathode shows a strong wavelength-dependent reflection. However, the Sm/Alq(3)/Al cathode demonstrates a low reflection in the whole visible range, and the resulting OLED shows a reduced luminous reflectance of 2.7% as compared to 81% for a control device with LiF/Al cathode. A further reduction to 0.9% is realized by replacing a multilayer of Alq(3)/Sm/Alq(3) for the single layer of Alq(3).

Novel bis(8-hydroxyquinoline)phenolato-aluminum complexes for organic light-emitting diodes

A novel series of emitting aluminum complexes containing two 8-hydroxyquinoline ligands (q) and a phenolato ligand (p) were synthesized and characterized. Double layer organic light-emitting diodes (OLEDs) were fabricated using these complexes as luminescent layers, and strong electroluminescence (EL) was observed. It was found that their emitting wavelengths were mainly determined by the first ligands (q). Cyclic voltammograms revealed a partially irreversible n-doping process and indicated that these complexes show excellent electron-transporting ability.

Oxadiazole-containing material with intense blue phosphorescence emission for organic light-emitting diodes

2-(2-hydroxyphenyl)-5-phenyl-1, 3, 4-oxadiazole (HOXD), characteristic of excited state intramolecular proton-transfer (ESIPT), was synthesized and found to emit strong blue phosphorescence in the solid state at room temperature and at low temperature (77 K). The photoluminescent spectrum measurement in solution showed that there are two kinds of emission: fluorescence originated from the singlet state and phosphorescence derived from the triplet state in HOXD formed by ESIPT. For the photoluminescent spectrum in the solid state, only phosphorescence emission with the lifetime of 66 mus was observed. Multiple-layer light-emitting diodes with the configuration of ITO/NPB/HOXD/BCP/Alq(3)/Mg:Ag were fabricated using HOXD as emitter and the maximum brightness of 656 cd/m(2) and the luminous efficiency of 0.14 lm/W was obtained.