Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing

The formation of arsenic clusters in a system of vertically aligned InAs quantum islands on GaAs during thermal annealing under As overpressure has been investigated by transmission electron microscopy (TEM) and Raman scattering. Semicoherent arsenic clusters, identified by TEM examination, have been formed on the surface of the GaAs capping layer. The existence of arsenic precipitates is also confirmed by Raman spectra, showing new peaks from the annealed specimen at 256 and 199 cm(-1). These peaks have been ascribed to A(1g) and E-g Raman active phonons of crystalline arsenic. The phenomenon can be understood by a model of strain-induced selected growth under As overpressure. (C) 1999 American Institute of Physics. [S0003-6951(99)02045-8].

Substrate surface atomic structure influence on the growth of InAlAs quantum dots

We have examined the influence of substrate surface orientation on self-assembled InAlAs/AlGaAs quantum dots grown on (0 0 1) and (n 1 1) A/B (n = 3, 5) GaAs substrates by molecular beam epitaxy (MBE). Preliminary characterizations have been performed using photoluminescence (PL) and transmission electron microscopy (TEM). The PL emission energies of quantum dots on high Miller index surface are found to be strongly dependent on the atomic-terminated surface (A or B surface) of the substrate. We observed that there were planar ordering larger islands on (3 1 1)B surface compared to (0 0 1) surface, in contrast, a rough interface and smaller "grains" on (3 1 1)A surface, this result is identical with PL emission energy from these islands. We propose that the rapid strain-induced surface "roughening" impedes the formation of 3D islands on A surface, and indicating that this is a promising approach of the realization of ordering distribution on (3 1 1)B plane for devices such as red-emitting semiconductor quantum dots lasers. (C) 1999 Elsevier Science B.V. All rights reserved.

High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103

Nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (LEDs) growths. It is expected that the strain induced by the lattice misfits between the GaN epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. The GaN epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) are characterized by means of scanning electron microscopy (SEM), high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the InGaN/GaN blue LEDs grown on the nano-patterned sapphire substrates.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

A DIFFERENTIAL SCANNING CALORIMETRY STUDY OF PLASMA IRRADIATION GRAFTING OF NASCENT POLYETHYLENE REACTOR POWDER

The melting behavior of poly(methyl methacrylate)-grafted nascent polyethylene reactor powder by plasma irradiation was studied by differential scanning calorimetry (DSC). The grafting yield ranged hom 11 to 190%. Grafting was found to lower both melting point and heat of fusion during the first run of DSC determination. The heat of fusion was used to calculate the apparent grafting yield of the samples. There was little strain induced by plasma-irradiated grafting on the surface of the polyethylene crystals. A method to determine the covalent grafting yield in the graft copolymer systems was developed. (C) 1995 John Wiley & Sons, Inc.

Protocol dependence of the jamming transition.

We propose a theoretical framework for predicting the protocol dependence of the jamming transition for frictionless spherical particles that interact via repulsive contact forces. We study isostatic jammed disk packings obtained via two protocols: isotropic compression and simple shear. We show that for frictionless systems, all jammed packings can be obtained via either protocol. However, the probability to obtain a particular jammed packing depends on the packing-generation protocol. We predict the average shear strain required to jam initially unjammed isotropically compressed packings from the density of jammed packings, shape of their basins of attraction, and path traversed in configuration space. We compare our predictions to simulations of shear strain-induced jamming and find quantitative agreement. We also show that the packing fraction range, over which shear strain-induced jamming occurs, tends to zero in the large system limit for frictionless packings with overdamped dynamics.

Direct assembly of three-dimensional mesh plasmonic rolls

A direct-assembly method to construct three-dimensional (3D) plasmonic nanostructures yields porous plasmonic rolls through the strain-induced self-rolling up of two-dimensional metallic nanopore films. This route is scalable to different hole sizes and film thicknesses, and applicable to a variety of materials, providing general routes towards a diverse family of 3D metamaterials with nano-engineerable optical properties. These plasmonic rolls can be dynamically driven by light irradiation, rolling or unrolling with increasing or decreasing light intensity. Such dynamically controllable 3D plasmonic nanostructures offer opportunities both for sensing and feedback in active nano-actuators. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711923]

Tunable 3D Plasmonic Swiss Rolls

Novel 3D plasmonic rolls are fabricated through strain-induced self-rolling of metallic nanopore sheets attached to elastomeric thin films, with optical properties tunable by varying the size and thickness of nanopores, and dynamically by light irradiation.

Microabrasion-corrosion of cast CoCrMo alloy in simulated body fluids

Wear and corrosion of metal-on-metal hip replacements results in wear debris and metal-ion release in vivo, which may subsequently cause pain and hypersensitivity for patients. Retrieved metal-on-metal hip replacements have revealed that two-body sliding wear and three-body abrasive wear are the predominant wear mechanisms. However, there is a lack of understanding of the combined effects of wear/corrosion, especially the effect of abrasion-corrosion.

This study investigates the sliding-corrosion and abrasion-corrosion performance of a cast CoCrMo alloy in simulated hip joint environments using a microabrasion rig integrated with an electrochemical cell. Tests have been conducted in 0.9% NaCl, phosphate buffered saline solution, 25% and 50% bovine serum solutions with 0 or 1 g cm(-3) SiC at 37 degrees C. Experimental results reveal that under abrasion-corrosion test conditions, the presence of proteins increased the total specific wear rate. Conversely, electrochemical noise measurements indicated that the average anodic current levels were appreciably lower for the proteinaceous solutions when compared with the inorganic solutions. A severely deformed nanocrystalline layer was identified immediately below the worn surface for both proteinaceous and inorganic solutions. The layer is formed by a recrystallisation process and/or a strain-induced phase transformation that occurs during microabrasion-corrosion. (C) 2008 Elsevier Ltd. All rights reserved.

Micro- and Nano-scale Tribo-Corrosion of Cast CoCrMo

Previous studies have established that some of the wear damage seen on cast CoCrMo joint surface is caused by entrained third-body hard particles. In this study, wet-cell micro-indentation and nano-scratch tests have been carried out with the direct aim of simulating wear damage induced by single abrasive particles entrained between the surfaces of cast CoCrMo hip implants. In situ electrochemical current noise measurements were uniquely performed to detect and study the wear-induced corrosion as well as the repassivation kinetics under the micro-/nano-scale tribological process. A mathematical model has been explored for the CoCrMo repassivation kinetics after surface oxide film rupture. Greater insights into the nature of the CoCrMo micro-/nano-scale wear-corrosion mechanisms and deformation processes are determined, including the identification of slip band formation, matrix/carbide deformation, nanocrystalline structure formation and strain-induced phase transformation. The electrochemical current noise provides evidence of instantaneous transient corrosion activity at the wearing surface resulting from partial oxide rupturing and stripping, concurrent with the indent/scratch.

Hot deformation characteristics of a nitride strengthened martensitic heat resistant steel

Constitutive equations including an Arrhenius term have been applied to analyze the hot deformation behavior of a nitride-strengthened (NS) martensitic heat resistant steel in temperature range of 900–1200 °C and strain rate range of 0.001–10 /s. On the basis of analysis of the deformation data, the stress–strain curves up to the peak were divided into four regions, in sequence, representing four processes, namely hardening, dynamic recovery (DRV), dynamic strain induced transformation (DSIT), and dynamic recrystallization (DRX), according to the inflection points in ∂θ/∂σ∂θ/∂σ and ∂(∂θ/∂σ)/∂σ∂(∂θ/∂σ)/∂σ curves. Some of the inflection points have their own meanings. For examples, the minimum of ∂θ/∂σ∂θ/∂σ locates the start of DRV and the maximum of it indicates the start of DRX. The results also showed that the critical strain of DRX was sensitive to ln(Z) below 40, while the critical stress of DRX was sensitive to it above 40. The final microstructures under different deformation conditions were analyzed in terms of softening processes including DRV, DRX, metadynamic crystallization (MDRX) and DSIT.

Analysis of deformation behavior and workability of advanced 9Cr-Nb-V ferritic heat resistant steels

Hot compression tests were carried out on 9Cr–Nb–V heat resistant steels in the temperature range of 600–1200 °C and the strain rate range of 10−2–100 s−1 to study their deformation characteristics. The full recrystallization temperature and the carbon-free bainite phase transformation temperature were determined by the slope-change points in the curve of mean flow stress versus the inverse of temperature. The parameters of the constitutive equation for the experimental steels were calculated, including the stress exponent and the activation energy. The lower carbon content in steel would increase the fraction of precipitates by increasing the volume of dynamic strain-induced (DSIT) ferrite during deformation. The ln(εc) versus ln(Z) and the ln(σc) versus ln(Z) plots for both steels have similar trends. The efficiency of power dissipation maps with instability maps merged together show excellent workability from the strain of 0.05 to 0.6. The microstructure of the experimental steels was fully recrystallized upon deformation at low Z value owing to the dynamic recrystallization (DRX), and exhibited a necklace structure under the condition of 1050 °C/0.1 s−1 due to the suppression of the secondary flow of DRX. However, there were barely any DRX grains but elongated pancake grains under the condition of 1000 °C/1 s−1 because of the suppression of the metadynamic recrystallization (MDRX).

Constitutive modeling, microstructure evolution, and processing map for a nitride-strengthened heat-resistant steel

A constitutive equation was established to describe the deformation behavior of a nitride-strengthened (NS) steel through isothermal compression simulation test. All the parameters in the constitutive equation including the constant and the activation energy were precisely calculated for the NS steel. The result also showed that from the stress-strain curves, there existed two different linear relationships between critical stress and critical strain in the NS steel due to the augmentation of auxiliary softening effect of the dynamic strain-induced transformation. In the calculation of processing maps, with the change of Zener-Hollomon value, three domains of different levels of workability were found, namely excellent workability region with equiaxed-grain microstructure, good workability region with “stripe” microstructure, and the poor workability region with martensitic-ferritic blend microstructure. With the increase of strain, the poor workability region first expanded, then shrank to barely existing, but appeared again at the strain of 0.6.

High-resolution electron energy-loss spectroscopy of Ba Ti O 3∕ Sr Ti O 3 multilayers

The dielectric properties of BaTiO3 thin films and multilayers are different from bulk materials because of nanoscale dimensions, interfaces, and stress-strain conditions. In this study, BaTiO3/SrTiO3 multilayers deposited on SrTiO3 substrates by pulsed laser deposition have been investigated by high-energy-resolution electron energy-loss spectroscopy. The fine structures in the spectra are discussed in terms of crystal-field splitting and the internal strain. The crystal-field splitting of the BaTiO3 thin layer is found to be a little larger than that of bulk BaTiO3, which has been interpreted by the presence of the internal strain induced by the misfit at the interface. This finding is consistent with the lattice parameters of the BaTiO3 thin layer determined by the selected area diffraction pattern. The near-edge structure of the oxygen K edge in BaTiO3 thin layers and in bulk BaTiO3 are simulated by first-principle self-consistent full multiple-scattering calculations. The results of the simulations are in a good agreement with the experimental results. Moreover, the aggregation of oxygen vacancies at the rough BaTiO3/SrTiO3 interface is indicated by the increased [Ti]/[O] element ratio, which dominates the difference of dielectric properties between BaTiO3 layer and bulk materials.

Characterisation of melt processed nanocomposites of Polyamide 6 subjected to uniaxial-drawing

In this paper, the processing and characterization of Polyamide 6 (PA6) nanocomposites containing graphite nanoplatelets (GNPs) is reported. PA6 nanocomposites were prepared by melt-mixing using an industrial, co-rotating, intermeshing, twin-screw extruder. A bespoke screw configuration was used that was designed in-house to enhance nanoparticle dispersion into a polymer matrix. The effects of nano-filler type (xGnPTM M-5 and xGnPTM C-500), nano-filler content, and extruder screw speed on the bulk properties of the PA6 nanocomposites were investigated. The crystalline structures of PA6 nanocomposites are related to thermal treatment, stress history and the presence of moisture and nanofillers. DSC, Raman and XRD studies show an increase in crystallinity with increasing GNP content and a phase transformation between α-form to γ-form crystals as a result of the heterophase nucleation effect. The effect of uniaxial stretching on PA6 nanocomposites was investigated by drawing specimens heated at temperatures below the melting temperature. DSC and Raman studies on the drawn samples show an increase in yield stress as the GNP content increases due to the strain induced crystallization and γ—β transition during stretching. The rheological response of the nanocomposites resemble that of a ‘pseudo-solid’, rather than a molten liquid, and analysis of the rheological data indicates that a percolation threshold was reached at GNP contents of between 10–15wt%. An increase in tensile modulus of as much as 412% was observed for PA6/C-500 xGnPTM composites, at a filler content of 20wt%. The enhancement of Young’s modulus and yield stress can be attributed to the reinforcing effect of GNPs and their uniform dispersion in the PA6 matrix. The electrical conductivity of the composite also increased with increasing GNP content, with an addition of 15wt% GNP resulting in a 6 order-of-magnitude increase in conductivity. The effects of uniaxial-drawing and the inclusion of multiple nano-filler varieties on the electrical and mechanical properties are currently under investigation.