Measurement of filling-factor-dependent magnetophonon resonances in graphene using Raman spectroscopy

We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments. © 2013 American Physical Society.

Multi-walled carbon nanotube conductivity enhancement and band gap widening via rapid pulsed thermal annealing

Herein we report on the transport characteristics of rapid pulsed vacuum-arc thermally annealed, individual and network multi-walled carbon nanotubes. Substantially reduced defect densities (by at least an order of magnitude), measured by micro-Raman spectroscopy, and were achieved by partial reconstruction of the bamboo-type defects during thermal pulsing compared with more traditional single-pulse thermal annealing. Rapid pulsed annealed processed networks and individual multi-walled nanotubes showed a consistent increase in conductivity (of over a factor of five at room temperature), attributed to the reduced number density of resistive axial interfaces and, in the case of network samples, the possible formation of structural bonds between crossed nanotubes. Compared to the highly defective as-grown nanotubes, the pulsed annealed samples exhibited reduced temperature sensitivity in their transport characteristics signifying the dominance of scattering events from structural defects. Transport measurements in the annealed multi-walled nanotubes deviated from linear Ohmic, typically metallic, behavior to an increasingly semiconducting-like behavior attributed to thermally induced axial strains. Rapid pulsed annealed networks had an estimated band gap of 11.26 meV (as-grown; 6.17 meV), and this observed band gap enhancement was inherently more pronounced for individual nanotubes compared with the networks most likely attributed to mechanical pinning effect of the probing electrodes which possibly amplifies the strain induced band gap. In all instances the estimated room temperature band gaps increased by a factor of two. The gating performance of back-gated thin-film transistor structures verified that the observed weak semiconductivity (p-type) inferred from the transport characteristic at room temperature. © 2014 Copyright Taylor & Francis Group, LLC.

An optimized design of a fiber optic hydrophone based on a flat diaphragm and multilayer fiber coils: A theoretical approach

In this paper, we present a theoretical approach to optimize the design of a fiber optic hydrophone based on a flat diaphragm and multilayer fiber coils. In this theoretical analysis, both the radial and tangential strain induced fiber length changes are taken into account. The result shows that the position of the fiber coils and the number of the fiber layers have significant effects on the sensitivity, of the hydrophone. By optimizing these parameters, a higher sensitivity can be achieved. Sample hydrophones are fabricated and tested. The experimental result is in good agreement with the theoretical result, which shows this theoretical approach is effective in optimizing the design of the fiber optic hydrophone. (C) 2008 Elsevier Ltd. All rights reserved.

Hydrogen-dependent lattice dilation in GaN

Using Raman spectroscopy we have analysed the strain status of GaN films grown on sapphire substrates by NH3 source molecular beam epitaxy (MBE). In addition to the expected compressive biaxial strain, in some cases GaN films grown on c-face sapphire substrates suffer from serious tensile biaxial strain. This anomalous behaviour has been well interpreted in terms of interstitial hydrogen-dependent lattice dilation. The hydrogen concentration in the films is measured by nuclear reaction analysis (NRA). With increasing hydrogen incorporation, the residual compressive biaxial strain is first further relaxed, and then turns into tensile strain when the hydrogen contaminant exceeds a critical concentration. The hydrogen incorporation during the growth process is found to be growth-rate dependent, and is supposed to be strain driven. We believe that the strain-induced interstitial incorporation is another way for strain relaxation during heteroepitaxy, besides the two currently well known mechanisms: formation of dislocations and growth front roughening.

Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing

The formation of arsenic clusters in a system of vertically aligned InAs quantum islands on GaAs during thermal annealing under As overpressure has been investigated by transmission electron microscopy (TEM) and Raman scattering. Semicoherent arsenic clusters, identified by TEM examination, have been formed on the surface of the GaAs capping layer. The existence of arsenic precipitates is also confirmed by Raman spectra, showing new peaks from the annealed specimen at 256 and 199 cm(-1). These peaks have been ascribed to A(1g) and E-g Raman active phonons of crystalline arsenic. The phenomenon can be understood by a model of strain-induced selected growth under As overpressure. (C) 1999 American Institute of Physics. [S0003-6951(99)02045-8].

Substrate surface atomic structure influence on the growth of InAlAs quantum dots

We have examined the influence of substrate surface orientation on self-assembled InAlAs/AlGaAs quantum dots grown on (0 0 1) and (n 1 1) A/B (n = 3, 5) GaAs substrates by molecular beam epitaxy (MBE). Preliminary characterizations have been performed using photoluminescence (PL) and transmission electron microscopy (TEM). The PL emission energies of quantum dots on high Miller index surface are found to be strongly dependent on the atomic-terminated surface (A or B surface) of the substrate. We observed that there were planar ordering larger islands on (3 1 1)B surface compared to (0 0 1) surface, in contrast, a rough interface and smaller "grains" on (3 1 1)A surface, this result is identical with PL emission energy from these islands. We propose that the rapid strain-induced surface "roughening" impedes the formation of 3D islands on A surface, and indicating that this is a promising approach of the realization of ordering distribution on (3 1 1)B plane for devices such as red-emitting semiconductor quantum dots lasers. (C) 1999 Elsevier Science B.V. All rights reserved.

High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103

Nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (LEDs) growths. It is expected that the strain induced by the lattice misfits between the GaN epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. The GaN epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) are characterized by means of scanning electron microscopy (SEM), high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the InGaN/GaN blue LEDs grown on the nano-patterned sapphire substrates.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

A DIFFERENTIAL SCANNING CALORIMETRY STUDY OF PLASMA IRRADIATION GRAFTING OF NASCENT POLYETHYLENE REACTOR POWDER

The melting behavior of poly(methyl methacrylate)-grafted nascent polyethylene reactor powder by plasma irradiation was studied by differential scanning calorimetry (DSC). The grafting yield ranged hom 11 to 190%. Grafting was found to lower both melting point and heat of fusion during the first run of DSC determination. The heat of fusion was used to calculate the apparent grafting yield of the samples. There was little strain induced by plasma-irradiated grafting on the surface of the polyethylene crystals. A method to determine the covalent grafting yield in the graft copolymer systems was developed. (C) 1995 John Wiley & Sons, Inc.

Protocol dependence of the jamming transition.

We propose a theoretical framework for predicting the protocol dependence of the jamming transition for frictionless spherical particles that interact via repulsive contact forces. We study isostatic jammed disk packings obtained via two protocols: isotropic compression and simple shear. We show that for frictionless systems, all jammed packings can be obtained via either protocol. However, the probability to obtain a particular jammed packing depends on the packing-generation protocol. We predict the average shear strain required to jam initially unjammed isotropically compressed packings from the density of jammed packings, shape of their basins of attraction, and path traversed in configuration space. We compare our predictions to simulations of shear strain-induced jamming and find quantitative agreement. We also show that the packing fraction range, over which shear strain-induced jamming occurs, tends to zero in the large system limit for frictionless packings with overdamped dynamics.

Direct assembly of three-dimensional mesh plasmonic rolls

A direct-assembly method to construct three-dimensional (3D) plasmonic nanostructures yields porous plasmonic rolls through the strain-induced self-rolling up of two-dimensional metallic nanopore films. This route is scalable to different hole sizes and film thicknesses, and applicable to a variety of materials, providing general routes towards a diverse family of 3D metamaterials with nano-engineerable optical properties. These plasmonic rolls can be dynamically driven by light irradiation, rolling or unrolling with increasing or decreasing light intensity. Such dynamically controllable 3D plasmonic nanostructures offer opportunities both for sensing and feedback in active nano-actuators. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711923]

Tunable 3D Plasmonic Swiss Rolls

Novel 3D plasmonic rolls are fabricated through strain-induced self-rolling of metallic nanopore sheets attached to elastomeric thin films, with optical properties tunable by varying the size and thickness of nanopores, and dynamically by light irradiation.

Microabrasion-corrosion of cast CoCrMo alloy in simulated body fluids

Wear and corrosion of metal-on-metal hip replacements results in wear debris and metal-ion release in vivo, which may subsequently cause pain and hypersensitivity for patients. Retrieved metal-on-metal hip replacements have revealed that two-body sliding wear and three-body abrasive wear are the predominant wear mechanisms. However, there is a lack of understanding of the combined effects of wear/corrosion, especially the effect of abrasion-corrosion.

This study investigates the sliding-corrosion and abrasion-corrosion performance of a cast CoCrMo alloy in simulated hip joint environments using a microabrasion rig integrated with an electrochemical cell. Tests have been conducted in 0.9% NaCl, phosphate buffered saline solution, 25% and 50% bovine serum solutions with 0 or 1 g cm(-3) SiC at 37 degrees C. Experimental results reveal that under abrasion-corrosion test conditions, the presence of proteins increased the total specific wear rate. Conversely, electrochemical noise measurements indicated that the average anodic current levels were appreciably lower for the proteinaceous solutions when compared with the inorganic solutions. A severely deformed nanocrystalline layer was identified immediately below the worn surface for both proteinaceous and inorganic solutions. The layer is formed by a recrystallisation process and/or a strain-induced phase transformation that occurs during microabrasion-corrosion. (C) 2008 Elsevier Ltd. All rights reserved.

Micro- and Nano-scale Tribo-Corrosion of Cast CoCrMo

Previous studies have established that some of the wear damage seen on cast CoCrMo joint surface is caused by entrained third-body hard particles. In this study, wet-cell micro-indentation and nano-scratch tests have been carried out with the direct aim of simulating wear damage induced by single abrasive particles entrained between the surfaces of cast CoCrMo hip implants. In situ electrochemical current noise measurements were uniquely performed to detect and study the wear-induced corrosion as well as the repassivation kinetics under the micro-/nano-scale tribological process. A mathematical model has been explored for the CoCrMo repassivation kinetics after surface oxide film rupture. Greater insights into the nature of the CoCrMo micro-/nano-scale wear-corrosion mechanisms and deformation processes are determined, including the identification of slip band formation, matrix/carbide deformation, nanocrystalline structure formation and strain-induced phase transformation. The electrochemical current noise provides evidence of instantaneous transient corrosion activity at the wearing surface resulting from partial oxide rupturing and stripping, concurrent with the indent/scratch.

High-resolution electron energy-loss spectroscopy of Ba Ti O 3∕ Sr Ti O 3 multilayers

The dielectric properties of BaTiO3 thin films and multilayers are different from bulk materials because of nanoscale dimensions, interfaces, and stress-strain conditions. In this study, BaTiO3/SrTiO3 multilayers deposited on SrTiO3 substrates by pulsed laser deposition have been investigated by high-energy-resolution electron energy-loss spectroscopy. The fine structures in the spectra are discussed in terms of crystal-field splitting and the internal strain. The crystal-field splitting of the BaTiO3 thin layer is found to be a little larger than that of bulk BaTiO3, which has been interpreted by the presence of the internal strain induced by the misfit at the interface. This finding is consistent with the lattice parameters of the BaTiO3 thin layer determined by the selected area diffraction pattern. The near-edge structure of the oxygen K edge in BaTiO3 thin layers and in bulk BaTiO3 are simulated by first-principle self-consistent full multiple-scattering calculations. The results of the simulations are in a good agreement with the experimental results. Moreover, the aggregation of oxygen vacancies at the rough BaTiO3/SrTiO3 interface is indicated by the increased [Ti]/[O] element ratio, which dominates the difference of dielectric properties between BaTiO3 layer and bulk materials.