Thin films prepared from tungstate glass matrix

Vitreous samples containing high concentrations of WO3 (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO3. These amorphous thin films of about 4 mu m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO3 microcrystals in the amorphous phase. (C) 2007 Elsevier B.V. All rights reserved.

Electrostatic layer-by-layer deposition and electrochemical characterization of thin films composed of MnO(2) nanoparticles in a room-temperature ionic liquid

Thin films of MnO(2) nanoparticles were grown using the layer-by-layer method with poly (diallyldimetylammonium) as the intercalated layer. The film growth was followed by UV-vis, electrochemical quartz crystal microbalance (EQCM), and atomic force microscopy. Linear growth due to electrostatic immobilization of layers was observed up to 30 bilayers, but electrical connectivity was maintained only for 12 MnO(2)/PPDA bilayers. The electrochemical characterization of this film in 1-butyl-2,3-dimethyl-imidazolium (BMMI) bis(trifluoromethanesulfonyl)imide (TFSI) (BMMITFSI) with and without addition of a lithium salt indicated a higher electrochemical response of the nanostructured electrode in the lithium-containing electrolyte. On the basis of EQCM experiments, it was possible to confirm that the charge compensation process is achieved mainly by the TFSI anion at short times (<2 s) and by BMMI and lithium cations at longer times. The fact that large ions like TFSI and BMMI participate in the electroneutrality is attributed to the redox reaction that occurs at the superficial sites and to the high concentration of these species compared to that of lithium cations.

XPS characterization of sensitized n-TiO2 thin films for dye-sensitized solar cell applications

TiO2 thin films, employed in dye-sensitized solar cells, were prepared by the sol-gel method or directly by Degussa P25 oxide and their surfaces were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The effect of adsorption of the cis-[Ru(dcbH(2))(2)(NCS)(2)] dye, N3, on the surface of films was investigated. From XPS spectra taken before and after argon-ion sputtering procedure, the surface composition of inner and outer layers of sensitized films was obtained and a preferential etching of Ru peak in relation to the Ti and N ones was identified. The photoelectrochemical parameters were also evaluated and rationalized in terms of the morphological characteristics of the films. (c) 2007 Elsevier B.V. All rights reserved.

Ascorbate electro-oxidation by modified electrodes: Polypyrrole and polypyrrole/Ni(OH)(2) composite thin films

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Deposition and characterization of BiVO4 thin films and evaluation as photoanodes for methylene blue degradation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Rare earth centers properties and electron trapping in SnO2 thin films produced by sol-gel route

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of the microwave oven on structural, morphological and electrical properties of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by a soft chemical method

Thin films of SrBi4Ti4O15 (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 degrees C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by Xray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P-r and a coercive field E-c values of 5.1 mu C/cm(2) and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 mu C/cm(2) and 85 kv/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10(10) switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories. (C) 2007 Elsevier B.V. All rights reserved.

Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol-gel-dip-coating

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Deposition of SiOx Thin Films on Y-TZP by Reactive Magnetron Sputtering: Influence of Plasma Parameters on the Adhesion Properties Between Y-TZP and Resin Cement for Application in Dental Prosthesis

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of precursor solution on the formation of perovskite phase of Pb(Mg-1/Nb-3(2/3))O-3 thin films

Precursor solutions for Pb(Mg1/3Nb2/3)O-3 (PMN) synthesis were obtained by Pechini's method. The influence of the concentration of organic materials on the phase formation has been studied. For this purpose, PMN solutions were prepared with different precursors and were characterized by thermogravimetric and differential thermal analysis. The obtained solutions were deposited onto a Si (100) substrate by dip coating and pre-treated in a hot plate at 300 degreesC for 1 h. The films were annealed at 600, 700, 800 and 900 degreesC for 1 h and characterized by X-ray diffraction. The perovskite phase was formed after annealing at 600 and 700 degreesC when the solution of PMN was prepared with a lower amount of organic material and starting with mobium oxide. By increasing the temperature to 800 or 900 degreesC, only the formation of pyrochlore phase was observed. With the solution prepared from mobium ethoxide, only the presence of pyrochlore phase was observed independently of the annealing temperature. (C) 2002 Elsevier B.V. B.V. All rights reserved.

XPS study of the corrosion protection of fluorozirconate glasses dip-coated with SnO2 transparent thin films

Tin oxide nanoparticles prepared by an aqueous sol-gel method were deposited by dip-coating on fluorozirconate glass, ZBLAN (53%ZrF4-20%BaF2-4%LaF3-3%AlF3-20%NaF) to improve its resistance against wet corrosion. The aqueous leaching of uncoated and SnO2-coated fluorozirconate glass was studied by X-ray photoemission spectroscopy (XPS) and it was shown that even an ultra thin tin dioxide film provides good protection of the glass surface against the bulk propagation of the hydrolytic attack.

Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures

The influence of the substrate temperature on the structural features and opto-electrical properties of undoped and indium-doped ZnO thin films deposited by pyrosol process was investigated. The addition of indium induces a drastic decrease (by a factor approximate to 10(10) for samples deposited at 300 degreesC) in the electrical resistivity of films, the lowest electrical resistivity (6 mOmega-cm) being observed for the film deposited at 450 degreesC. Films are highly transparent (>80%) in the Vis-NIR ranges, and the optical band gap exhibits a blue shift (from 3.29 to 3.33 eV) for the In-doped films deposited at increasing temperature. Preferential orientation of the ZnO crystallites with the c-axis perpendicular to the substrate surface and an anisotropic morphology of the nanoporous structure was observed for films growth at 300 and 350 degreesC. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Transport and sensors properties of nanostructured antimony-doped tin oxide films

Tin oxide thin films doped with 7 mol% antimony oxide multilayer were prepared by the polymeric precursor method. Morphological characterization revealed films with round-shaped grains, nanometric size (similar to 13 nm), and low roughness. These films display high transmittance (similar to 80%) in the visible range of transmittance spectra, which is desirable for transparent conductive oxide films. Analysis on electrical resistivity versus temperature data showed two different conduction mechanisms toward the temperature range. The gas sensor properties measurement of the thicker thin film revealed good sensibility for the NOx. (c) 2006 Elsevier B.V. All rights reserved.

Transparent and conductive ZnO : Al thin films prepared by sol-gel dip-coating

Aluminum doped zinc oxide polycrystalline thin films (AZO) were prepared by sol-gel dip-coating process. The sol was prepared from an ethanolic solution of zinc acetate using lithium hydroxide or succinic acid as hydrolytic catalyst. The quantity of aluminum in the sol was varied from 1 to 10 mol%. The structural characteristics studied by X-ray diffractometry were complemented by resistivity measurements and UV-Vis-NIR spectroscopy. The films are transparent from the near ultraviolet to the near infrared, presenting an absorption cut-off at almost 290 nm, irrespective of the nature of the catalyst and doping level. The best conductors were obtained for the AZO films containing 3 mol% of aluminum, prepared under acidic and basic catalysis and sintered at 450 degreesC. Their optical band-gap of 4.4 eV calculated from the absorption cut-off is larger than the values for band-gap widening predicted by the standard model for polar semiconductors. These polycrystalline films are textured with preferential orientation of grains along the wurtzite c-axis or the (100) direction. (C) 2003 Elsevier Ltd. All rights reserved.

Effect of thickness on the electrical and optical properties of Sb doped SnO2 (ATO) thin films

This work reports the preparation and characterization of (SnO2) thin films doped with 7 mol% Sb2O3. The films were prepared by the polymeric precursor method, and deposited by spin-coating, all of them were deposited on amorphous silica substrate. Then, we have studied the thickness effect on the microstrutural, optical and electric properties of these samples. The microstructural characterization was carried out by X-ray diffraction (XRD) and scanning tunneling microscopy (STM). The electrical resistivity measurements were obtained by the van der Pauw four-probe method. UV-visible spectroscopy and ellipsometry were carried out for the optical characterization. The films present nanometric grains in the order of 13 nm, and low roughness. The electrical resistivity decreased with the increase of the film thickness and the smallest measured value was 6.5 x 10(-3) Omega cm for the 988 nm thick film. The samples displayed a high transmittance value of 80% in the visible region. The obtained results show that the polymeric precursor method is effective for the TCOs manufacturing.