Clareamento dental com perôxido de hidrogênio contendo nano partículas de óxido de titânio como semicondutor: efeito de concentrações, tempos e formas de ativação

Pós-graduação em Ciências Odontológicas - FOAR

Reação histológica de exposições pulpares em dentes de ratos à aplicação do laser de baixa intensidade somente ou em associação ao capeamento com hidróxido de cálcio

Pós-graduação em Odontologia - FOAR

Resposta de celúlas odontoblastóides MDPC-23 irradiadas com LED de 630nm

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Efeito do laser de baixa intensidade na polpa e nos tecidos apicais e periapicais em dentes de macaco

Pós-graduação em Odontologia - FOAR

Estudo teórico das propriedades estruturais e eletrônicas do GaN e do semicondutor magnético Ga1-xMnxN no bulk e na superfície

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Processo de tratamento de efluentes têxteis por oxidação fotoeletrocatalítica e respectivo eletrodo semicondutor de ti/ti02

O objeto da presente patente é um reator fotoeletrocatalítico operando com eletrodos nanoporosos ou nanotubulares de Ti/TiO~ 2~ como fotoanodos, uma rede de platina como cátodo para oxidação fotoeletrocatalítica de efluentes coloridos, sob densidade de corrente constante e irradiação de luz UV, utilizado no tratamento de águas de rejeito contendo corantes ácidos, básicos, dispersos, reativos e agentes dispersantes e efluentes coletados de indústrias têxteis. Ambos os eletrodos mostraram uma performance acima dos métodos usuais removendo não apenas a coloração, mas processando grande mineralização dos diversos tipos de corantes, surfactantes etc. em efluentes da industria têxtil.

A Novel 785-nm Laser Diode-Based System for Standardization of Cell Culture Irradiation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Finite-time synchronization of tunnel-diode-based chaotic oscillators

This paper addresses the problem of finite-time synchronization of tunnel diode based chaotic oscillators. After a brief investigation of its chaotic dynamics, we propose an active adaptive feedback coupling which accomplishes the synchronization of tunnel-diode-based chaotic systems with and without the presence of delay(s), basing ourselves on Lyapunov and on Krasovskii-Lyapunov stability theories. This feedback coupling could be applied to many other chaotic systems. A finite horizon can be arbitrarily established by ensuring that chaos synchronization is achieved at a pre-established time. An advantage of the proposed feedback coupling is that it is simple and easy to implement. Both mathematical investigations and numerical simulations followed by PSPICE experiment are presented to show the feasibility of the proposed method.

Light-emitting diode effects on combined decellularization of tracheae. A novel approach to obtain biological scaffolds

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Light emitting diode (LED) use in artificial lighting for broiler chicken production

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Estudo, construção e caracterização de diodos orgânicos tipo Schttky

During the twentieth century the inorganic electronics was largely developed being present in various industrial equipment or household use. However, at the end of that century were verified electronic properties in organic compounds, giving rise to the field of organic electronics. Since then, the physical properties of elementary devices such as diodes and organic transistors have been studied. In this work was studied the properties of diode devices fabricated with a semiconductor polymer, the poly-o-methoxyaniline (POMA). Devices containing electrodes of Au and Al were fabricated with semiconductor polymer of different doping levels. We found that the rectifying behavior for the heterojunctions metal/polimer are reached only for high doping level (with conductivity greater than 1,77. 10-9 S / cm), which gives the devices characteristic of a Schottky diode. The rectifying behavior was observed for electric fields of low magnitude, below the operating field (~ 600 V/cm), while for electric field greater than 600 V/cm the a linear behavior I vs.V was obtained. We determined that this Ohmic behavior arises from the charge transport over the volume of the semiconductor material after the lowering of the metal/semiconductor barrier. In devices with weakly doped semiconductor, the electrical resistance of the volume becomes high and the process of charge transportation is dominated by the volume, for any intensity of the applied electric field

Diodo planar orgânico Schottky: construção e caracterização

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Degree of conversion of different composite resins photo-activated with light-emitting diode and argon ion laser

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effectiveness of the diode laser in the treatment of ligature-induced periodontitis in rats: a histopathological, histometric, and immunohistochemical study

The aim of this study was to evaluate the effects of the use of a high-power gallium-aluminum-arsenide diode laser (GaAlAs; 808 nm, 1 W, 20 s, 20 Hz, 10 J) alone or as adjunctive therapy to scaling and root planing in the treatment of induced periodontitis in rats. Periodontitis was induced by placing a ligature around the mandibular first molar of 60 rats. After 7 days, the ligature was removed and the animals were divided into four groups as follows: C (control), no periodontal treatment; SRP, scaling and root planing (SRP); DL, diode laser (DL) irradiation treatment; and SRP/DL, both SRP and DL irradiation treatment. Five animals from each group were euthanized at 7, 15, and 30 days posttreatment. The effectiveness of the treatments was evaluated in the furcation area using histopathological analysis, histometric analysis of alveolar bone loss (ABL), and immunohistochemical detection of tartrate-resistant acid phosphatase (TRAP), runt-related transcription factor 2 (RUNX2), and osteocalcin (OCN). DL, alone or in combination with adjunctive therapy to SRP in the treatment of experimental periodontitis, resulted in a decreased local inflammatory response. At 7-days posttreatment, the DL and SRP/DL groups had fewer TRAP-positive cells and more RUNX2-positive cells. There was greater OCN immunolabeling in the DL group than in the C and SRP groups at 15 days. There was less ABL in the DL and SRP/DL groups at 15 and 30 days. In conclusion, DL was effective in the treatment of ligature-induced periodontitis in rats, both when used alone and when used as adjunctive therapy to SRP.

Fabricação e caracterização de diodo Schottky orgânico com arquitetura planar

Usually organic polymeric diodes are made with a semiconductor layer placed between two electrodes in a sandwich-like architecture, where the electrodes are deposited on the surfaces of a polymeric semiconductor film. This methodology leads to two main problems: i) the polymeric film top surface is rough and irregular, resulting in non-uniform electric field into the device; ii) during the deposition of metallic electrode in the top surface polymeric film, by thermal evaporation, occurs the diffusion of metal atoms into the polymeric film, changing the material electronic structure. Thus, the metal-semiconductor junction is not well defined, which is essential for the production of good quality Schottky diode, which exhibits ideality factor close to the unity and low turn-on voltage. In order to avoid these two problems, in the present research was proposed to manufacture an organic diode with the semiconductor polymeric layer deposited over bimetallic (gold and aluminum) interdigitated electrodes. The doping of the active layer was performed by immersing the device in hydrochloric acid solution with pH 2 during different times in order to promote different doping levels of the semiconductor polymer. Was verified that the proposed diode, which exhibits well-defined metal-semiconductor junction, operates as a Schottky diode, with good ideality factor, 10 ± 3, and low turn-on voltage, 1,2 ± 0,2 V, in comparison with conventional organic polymeric diodes. Contrasting with the ideality factor and turn-on voltage, the diode rectification ratio was obtained as 7, a value lower than the expected for a good organic diode. Was also showed that the diode characteristics were dependent on the semiconductor polymer doping level, and that the diode characteristics were optimized with doping promoted by immersion in the acid solution for times longer than 50 s. Furthermore, as was showed that the diodes properties are dependent on the semiconductor...