EFFECT OF CODOPING SB AND V TO THE BIPBSRCACUO SYSTEM

With XRD, R- T curves, and a.c chi measurements, the doping and codoping effects of Sb and V to a Cu-deficient Pb-doped Bi system have been studied. A sample singly doped with V possesses a T(c) about 2 K lower than that of a sample singly doped with Sb. This is attributed to the different sites of their substitution. It was observed that for promoting 2223 phase formation, Sb and V works cooperatively, and the codoping of Sb may enhance the 2223 phase formed. With a low doping level of Sb, the optimum doping amount of V is 0.3, i.e., with a nominal composition of Bi1.5Pb0.3Sb0.06Sr2Ca2Cu2.4V0.3Oy. A sample in which the 2223 phase is the dominant phase and which has a zero resistance transition temperature of 105 K has been obtained.

Numerical simulation of the liquid phase in SnO(2) thin film deposition by sol-gel-dip-coating

The fluid flow of the liquid phase in the sol-gel-dip-coating process for SnO(2) thin film deposition is numerically simulated. This calculation yields useful information on the velocity distribution close to the substrate, where the film is deposited. The fluid modeling is done by assuming Newtonian behavior, since the linear relation between shear stress and velocity gradient is observed. Besides, very low viscosities are used. The fluid governing equations are the Navier-Stokes in the two dimensional form, discretized by the finite difference technique. Results of optical transmittance and X-ray diffraction on films obtained from colloidal suspensions with regular viscosity, confirm the substrate base as the thickest part of the film, as inferred from the numerical simulation. In addition, as the viscosity increases, the fluid acquires more uniform velocity distribution close to the substrate, leading to more homogenous and uniform films.

Synthesis and structural characterization of Eu(III)-doped Zn7Sb2O12

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The effect of Sb and Nb on the electrical conductivity of tin dioxide based ceramics

The electrical conductivity of Mn doped SnO2 systems prepared by an organic route (Pechini's method) has been investigated as a function of antimony and niobium concentration. The conductivity increases with the increase of both concentration ions, however, in a different manner. While the conductivity of niobium doped ceramics increases with the power of 1.6 for the entire range of concentrations studied (0.01-0.7 mol%), the conductivity of antimony doped ceramics increases with the power of 1.9 in the range 0.01-0.05 mol% of Sb; 3.7 in the range 0.05-0.30 mol% and 1.8 in the range 0.30-0.70 mol%. This behavior is attributed to the existence of two stable oxidation states for antimony: Sb3+ and Sb5+, while for niobium there is only one: Nb5+. The power of 3.7 for Sb would be related to the segregation of this ion on the grain boundary accompanied by an additional contribution coming from the substitution of Sn2+ by Sb3+ on the grain surface.

Aspects of solid state formation and properties of Sn(0.9)Ti(0.1)O(2) system doped with CoO and Nb(2)O(5)

The effect of calcination temperature during the formation of the solid solution Sn(0.9)Ti(0.1)O(2) doped with 1.00 mol % CoO and 0.05 mol % Nb(2)O(5) is presented. The structural characteristics of this system were studied using X-ray diffraction, and the changes in phase formation were analyzed using the Rietveld method. With an increase in calcination temperature, there is increasing miscibility of Ti into the (Ti,Sn)O(2) phase and near 1000 degrees C, and the remaining TiO(2) (anatase) was transformed into the rutile phase. The sintering process, monitored using dilatometry, suggests two mass transport mechanisms, one activated close to 900 degrees C associated with the presence of TiO(2) (anatase) and the second mechanism, occurring between 1200 and 1300 degrees C, is attributed to a faster grain boundary diffusion caused by oxygen vacancies. (C) 2008 International Centre for Diffraction Data.

Influence of heat treatment on the optical properties of SnO2 : Sb thin films deposited by dip coating using aqueous solution

Antimony doped tin oxide thin films were deposited on glass by a chemical route derived from Pechini method. Particular emphasis was given to the microstructure of crystallized films. Crystalline phase formation was studied by grazing incident X-ray diffraction and by thermal analyses. Scanning electron microscopy was carried out for microstructure characterization, surface roughness was observed using scanning tunneling microscope and the optical transmittance measurements were performed in the wavelength range of 200-800 nm. (C) 2002 Kluwer Academic Publishers.

Deposition of controlled thickness ultrathin SnO2 : Sb films by spin-coating

The technological interest in transparent conductive oxide films (TCOs) has motivated several works in processing techniques, in order to obtain adequate routes to application. In this way, this work describes a new route to obtain antimony-doped tin oxide (ATO) films, based in colloidal dispersions of oxide nanocrystals. The nanoparticles were obtained by a hydrolisis method, using SnCl2 and SbCl3 in ethanolic solutions. The residual halides were removed by dyalisis, obtaining a limpid and transparent colloidal suspension. By this, the method offers the advantage of producing ultrathin films without organic contaminants. This route was employed to produce films with 5, 10, 14, and 18 mol% Sb doping, with thickness ranging from 40 to 70 nm. The physical characterization of the samples showed a uniform layer deposition, resulting in good packing density and high transmittance. A preliminar electrical study confirmed the low electrical resistivity even in the ultrathin films, in such level similar of reported data. The method described is similar in some aspects to layer-by-layer (LbL) techniques, allowing fine control of thickness and interesting properties for ultrathin films, however, with low cost when compared to similar routes.

Investigation of electrical properties of tantalum doped SnO2 varistor system

Ta2O5 doped SnO2 varistor systems containing 0.5 mol% ZnO and 0.5 mol% Coo were prepared by mixed oxide method. Considering that ZnO and Coo oxides are densification additives only the SnO(2)center dot ZnO center dot CoO ceramics cannot exhibit electrical nonlinearity. A small amount of Ta2O5 improves the nonlinear properties of the samples greatly. The height and width of the defect barriers were calculated. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1100 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. A grain-boundary defect barrier model for the SnO(2)center dot ZnO center dot CoO center dot Ta2O5 varistor system was also introduced. (c) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Development of metal oxide nanoparticles by soft chemical method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Optical emission and electron capture of rare-earth trivalent ions located at distinct sites in SnO(2) thin films

We present photoluminescence and decay of photo excited conductivity data for sol-gel SnO(2) thin films doped with rare earth ions Eu(3+) and Er(3+), a material with nanoscopic crystallites. Photoluminescence spectra are obtained under excitation with several monochromatic light sources, such as Kr(+) and Ar(+) lasers, Xe lamp plus a selective monochromator with UV grating, and the fourth harmonic of a Nd: YAG laser (4.65eV), which assures band-to-band transition and energy transfer to the ion located at matrix sites, substitutional to Sn(4+). The luminescence structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at grain boundary layer, where it is placed in asymmetric sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference between capture energy and grain boundary barrier is not so evident, even though the luminescence spectra are rather distinct.

The synergistic effects of Nb/Mn and Sb/Mn on the microstructure and electrical characteristics of BaTiO3 based ceramics

The microstructure and dielectric properties of Nb-Mn or Sb-Mn codoped BaTiO3 compositions were investigated. Starting ceramics powders were prepared by Pechini method. The composites were sintered at 1310°C and 1330°C in an air atmosphere for two hours. The microstructure and compositional investigations were done with SEM equipped with EDS. Two distinguish microstructure regions are observed in Nb/0.05Mn doped BaTiO 3 ceramics sintered at low temperature. The first, large one, with grain sizes from 5-40 μm and the second region with small grain sizes from 1 to 5 μm. Sintering at higher temperature, independent of Mn content, enables to achieve a uniform microstructure with grains less than 6 μm. In Sb/Mn doped ceramics, for both sintering temperatures, bimodal microstructures with fine grained matrix and grains up to 10 μm is formed. The highest value of permittivity at room temperature and the greatest change of permittivity in function of temperature are observed in Nb/0.01Mn doped ceramics compared to the same ones in Sb/Mn doped ceramics. The greatest shift of Curie temperature towards lower temperature has been noticed in Sb/Mn BaTiO3 ceramics compared to others samples. In all investigated samples the dielectric loss after initially large values at low frequency maintains a constant value for f>3 kHz.

Densification of Mn-doped tin oxide films by conventional heating and microwave heating treatment

Mn(II) doped SnO2 thin films used for shielding fluoride glasses against corrosion were investigated by x-ray absorption spectroscopy (EXAFS and XANE)S at the Sn and Mn K-edges. The effect of firing treatment on the densification of the films was studied. It has been evidenced a partial change of Mn valence from 2.3 to 2.6 upon heating which is attributed to a change of ratios of two Mn sites: grafted divalent Mn ions at the surface of SnO 2 nanocrystallites and trivalent Mn ions embedded into a substitutional solid solution with Sn. © Physica Scripta 2005.

SnO 2 ceramics with low electrical resistivity obtained by microwave sintering

The main aim of this study was to develop dense and conducting SnO 2 ceramics without precipitated phases on the grain boundaries, which was verified using field emission scanning microscopy (FE-SEM) coupled with an energy-dispersive X-ray spectroscopy (FE-SEM/EDS). Two sample groups were investigated, where the first sample group was doped with zinc while the second one was doped with cobalt. The ceramics were prepared using the oxides mixture method and the sintering was carried out in a conventional muffle oven as well as in microwave oven. The results obtained were found to be similar regarding the relative density for the two sintering methods while time and temperature gains were observed for the microwave sintering method. The relative densities obtained were nearly 95%, for the two sintering methods. Concerning the electrical characterization measurements-electric field x current density as well as the environment temperature, the ceramics obtained through the conventional sintering method presented non-ohmic behavior. For the microwave sintered ceramics, we observed an ohmic behavior with electrical resistivity of 1.3 Ωcm for the samples doped with ZnO/Nb 2O 5 and 2.5 Ωcm for that of the samples doped with CoO/Nb 2O 5. The FE-SEM/EDS results for the microwave sintered ceramics indicated a structure with a reduced number of pores and other phases segregated at the grain boundaries, which leads to a better conductive ceramic than the conventional oven sintered samples. The dilatometry analysis determined the muffle sintering temperature and the difference between the densification of cobalt and zinc oxides. The addition of niobium oxide resulted in the decrease in resistivity, which thus led us to conclude that it is possible to obtain dense ceramics with low electrical resistivity based on SnO 2 using commercial oxides by the oxides mixture technique and the microwave oven sintering method. Copyright © 2011 American Scientific Publishers All rights reserved.

Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties

Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.

'ZN IND.7'SB IND. 2'O IND. 12' contendo Ce(III), Pr(III) ou Eu(III): investigação de suas propriedades estruturais e ópticas para potencial aplicação como cintilador

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