990 resultados para SCALAR FIELD-EQUATIONS
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In this work we discuss the Hamilton-Jacobi formalism for fields on the null-plane. The Real Scalar Field in (1+1) - dimensions is studied since in it lays crucial points that are presented in more structured fields as the Electromagnetic case. The Hamilton-Jacobi formalism leads to the equations of motion for these systems after computing their respective Generalized Brackets. Copyright © owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence.
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The viability of achieving gravitational consistent braneworld models in the framework of a f(R) theory of gravity is investigated. After a careful generalization of the usual junction conditions encompassing the embedding of the 3-brane into a f(R) bulk, we provide a prescription giving the necessary constraints in order to implement the projected second-order effective field equations on the brane. © 2013 American Physical Society.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Pós-graduação em Física - FEG
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Pós-graduação em Física - FEG
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Pós-graduação em Física - IFT
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We studied the low energy motion of particles in the general covariant. version of Horava-Lifshitz gravity proposed by Horava and Melby-Thompson. Using a scalar field coupled to gravity according to the minimal substitution recipe proposed by da Silva and taking the geometrical optics limit, we could write an effective relativistic metric for a general solution. As a result, we discovered that the equivalence principle is not in general recovered at low energies, unless the spatial Laplacian of A vanishes. Finally, we analyzed the motion on the spherical symmetric solution proposed by Horava and Melby-Thompson, where we could find its effective line element and compute spin-0 geodesics. Using standard methods we have shown that such an effective metric cannot reproduce Newton's gravity law even in the weak gravitational field approximation. (C) 2011 Elsevier B.V All rights reserved.
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Non-commutative geometry indicates a deformation of the energy-momentum dispersion relation f (E) = E/pc (not equal 1) for massless particles. This distorted energy-momentum relation can affect the radiation-dominated phase of the universe at sufficiently high temperature. This prompted the idea of non-commutative inflation by Alexander et al (2003 Phys. Rev. D 67 081301) and Koh and Brandenberger (2007 JCAP06(2007) 021 and JCAP11(2007) 013). These authors studied a one-parameter family of a non-relativistic dispersion relation that leads to inflation: the a family of curves f (E) = 1 + (lambda E)(alpha). We show here how the conceptually different structure of symmetries of non-commutative spaces can lead, in a mathematically consistent way, to the fundamental equations of non-commutative inflation driven by radiation. We describe how this structure can be considered independently of (but including) the idea of non-commutative spaces as a starting point of the general inflationary deformation of SL(2, C). We analyze the conditions on the dispersion relation that leads to inflation as a set of inequalities which plays the same role as the slow-roll conditions on the potential of a scalar field. We study conditions for a possible numerical approach to obtain a general one-parameter family of dispersion relations that lead to successful inflation.
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In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and demonstrated in detail. We compare these new iterations with a standard method that is complemented by a feature to fit in the current context. A further innovation is the computation of solutions in three-dimensional domains, which are still rare. Special attention is paid to applicability of the 3D simulation tools. The programs are designed to have justifiable working complexity. The simulation results of some models of contemporary semiconductor devices are shown and detailed comments on the results are given. Eventually, we make a prospect on future development and enhancements of the models and of the algorithms that we used.