Preferential exposure of certain crystallographic planes on the surface of spinel ferrites: a study by LEIS on polycrystalline spinel ferrite surfaces

Spinel ferrites are commercially important because of their excellent magnetic and catalytic properties. The study by Low Energy Ion Scattering (LEIS) can reveal atomic scale information on the surface. The surface of selected spinel ferrites was investigated by LEIS. It has been found that it is the octahedral sites which are preferentially exposed on the surface of the spinel ferrites. So the probable planes which are exposed on spinel ferrite surfaces are D(110) or B(111). This prediction using LEIS gives scope for tailor-making compounds with catalytically active ions on the surface for various catalytic reactions.

Numerical simulation of magnetic interactions in polycrystalline YFeO3

The magnetic behavior of polycrystalline yttrium orthoferrite was studied from the experimental and theoretical points of view. Magnetization measurements up to 170 kOe were carried out on a single-phase YFeO3 sample synthesized from heterobimetallic alkoxides. The complex interplay between weak-ferromagnetic and antiferromagnetic interactions, observed in the experimental M(H) curves, was successfully simulated by locally minimizing the magnetic energy of two interacting Fe sublattices. The resulting values of exchange field (H-E = 5590 kOe), anisotropy field (H-A = 0.5 kOe) and Dzyaloshinsky-Moriya antisymmetric field (H-D = 149 kOe) are in good agreement with previous reports on this system. (C) 2007 Elsevier B.V. All rights reserved.

Persistent luminescence of Eu(2+) and Dy(3+) doped barium aluminate (BaAl(2)O(4):Eu(2+),Dy(3+)) materials

Polycrystalline Eu(2+) and Dy(3+) doped barium aluminate materials, BaAl(2)O(4):Eu(2+),Dy(3+), were prepared with solid state reactions at temperatures between 700 and 1500 degrees C. The influence of the thermal treatments on the stability, homogeneity and structure as well as to the UV-excited and persistent luminescence of the materials was investigated by X-ray powder diffraction, SEM imaging and infrared spectroscopies as well as by steady state luminescence spectroscopy and persistent luminescence decay curves, respectively. The IR spectra of the materials prepared at 250, 700, and 1500 degrees C follow the formation of BaAl(2)O(4) composition whereas the X-ray powder diffraction of compounds revealed how the hexagonal structure was obtained. The morphology of the materials at high temperatures indicated important aggregation due to sintering. The luminescence decay of the quite narrow Eu(2+) band at ca. 500 nm shows the presence of persistent luminescence after UV irradiation. The dopant (Eu(2+)) and co-clopant (Dy(3+)) concentrations affect the crystallinity and luminescence properties of the materials. (C) 2009 Elsevier B.V. All rights reserved.

Influence of grain size and training temperature on strain of polycrystalline Ni50Mn29Ga21 samples

The alloy Ni-Mn-Ga aroused great interest for application as a magnetic shape memory (MSM) material. This effect is caused by reorientation of twin variants by an external magnetic field. So far, most of the experiments were concentrated on single crystals. But, the MSM effect can also be realised in polycrystals which can be prepared much more efficiently. Here, polycrystalline samples were prepared by directional solidification with a <100> fibre texture of the high temperature cubic austenitic phase parallel to the heat flow. Afterwards, a heat treatment was applied for chemical homogenisation and stress relaxation in the austenitic state. Then the samples were heated up to the austenitic state and cooled down under load. The microstructure was analysed by Electron Back Scatter Diffraction (EBSD) before and after that treatment. Mechanical training at room temperature and 40°C was tracked by recording stress-strain curves. By increasing the number of training cycles the strain also increases. The influence of different training temperatures was investigated on samples with different grain sizes.

Structural and optical properties of CaTiO3 perovskite-based materials obtained by microwave-assisted hydrothermal synthesis: An experimental and theoretical insight

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influence of thermal annealing treatment in oxygen atmosphere on grain boundary chemistry and non-ohmic properties of SnO2 center dot MnO polycrystalline semiconductors

The present work studied the influence of thermal treatment in oxygen rich atmosphere on heterogenous junctions in Mn-doped SnO2 polycrystalline system presenting varistor behavior. The samples were prepared by conventional oxide mixture methodology, and were submitted to heat treatment in oxygen rich atmosphere at 900 degrees C for 2h. The samples were characterized by X-ray diffraction, scanning electron microscopy, dc and ac electrical measurements. The results showed that there is an evident relationship between the microstructure heterogeneity and non-ohmic electrical properties. It was found that for this SnO2 center dot MnO-based varistor system the heat treatment in oxygen rich atmosphere does not necessarily increase the varistors properties, which was related to the decrease in the grain boundary resistance. The results are compared with Co-doped SnO2 varistors and ZnO based varistors. (C) 2008 WILEY-VCH Verlay GmbH & Co. KGaA, Weinheim.

Nature of potential barrier in (Ca-1/4,Cu-3/4)TiO3 polycrystalline perovskite

The nonohmic electrical features of (Ca-1/4,Cu-3/4)TiO3 perovskite ceramics, which have very strong gigantic dielectric is believed originate from potential barriers at the grain boundaries. In the present study, we used the admittance and impedance spectroscopy technique to investigate (Ca-1/4,Cu-3/4)TiO3 perovskite ceramics with low nonohmic electrical properties. The study was conducted under two different conditions: on as-sintered ceramics and on ceramics thermally treated in an oxygen-rich atmosphere. The results confirm that thermal treatment in oxygen-rich atmospheres influence the nonohmic properties. Annealing at oxygen-rich atmospheres improve the nonohmic behavior and annealing at oxygen-poor atmospheres decrease the nonohmic properties, a behavior already reported for common metal oxide nonohmic devices and here firstly evidenced for the (Ca-1/4,Cu-3/4)TiO3 perovskite related materials. The results show that oxygen also influences the capacitance values at low frequencies, a behavior that is indicative of the Schottky-type nature of the potential barrier. (c) 2006 Elsevier Ltd. All rights reserved.

Resistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorods

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films

The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi3.25La0.75Ti3O12 was investigated. Films with thicknesses ranging from 230 to 404 nut were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness. (c) 2007 Elsevier Ltd. All rights reserved.

Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor

The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.

Electronic ceramics based on polycrystalline SnO2, TiO2 and (Sn xTi1-x)O2 solid solution

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Detection of cracks in scratching tests in ceramic materials through acoustic emission

The mechanisms of material removal and the interactions among scratches performed in ceramic materials were investigated using acoustic emission signals, and scanning electron microscopy, in scratching experiments. Several testing conditions were used to produce different types of removing mechanism on a glass as well as on a polycrystalline alumina sample composed by heterogeneous grain size. It is known that the material removing process on a polycrystalline ceramic involves intergranular microfracture and grain dislodgement, unlike the chipping produced by the extension of lateral cracks in non-granular materials, such as glass. Distinct settings for velocities, loads, and two types of diamond indenter were tested. The material removal was carried out by three different methods of scratching: single passes, repeated overlapping passes, and parallel scratches. As a general result, there was a clear relationship between the acoustic emission signals and the damage intensity occurred in the material removal. More specifically, there were differences in the acoustic emission signal levels in the scratches made on the alumina and on the glass owing to the material removal mechanisms associated with the structure of these materials. A gradual increase in the acoustic emission levels was observed when the number of repeated passes was increased as a result of the damage accumulation process followed by severe material removal. It was also noticed that the acoustic emission signals were capable of reflecting the interactions between two parallel scratches.

Admittance and dielectric spectroscopy of polycrystalline semiconductors

This text discusses about advantageous, powerful and limitations of admittance and dielectric spectroscopy in the characterization of polycrystalline semiconductors. In the context of polycrystalline semiconductors or dielectric materials, the admittance or dielectric frequency response analyses are shown to be sometimes more useful than impedance spectra analysis, mainly because information on the capacitances or deep trap states are possible to be monitored from admittance or dielectric spectra as a function of dopant concentration or annealing effects. The majority of examples of the application of admittance or dielectric analysis approach were here based on SnO2- and ZnO-based polycrystalline semiconductors devices presenting nonohmic properties. Examples of how to perform the characterization of Schottky barrier in such devices are clearly depicted. The approach is based on findings of the true Mott-Schottky pattern of the barrier by extracting the grain boundary capacitance value from complex capacitance diagram analysis. The equivalent circuit of such kind of devices is mainly consistent with the existence of three parallel elements: the high-frequency limit related to grain boundary capacitances, the complex incremental capacitance at intermediate frequency related to the deep trap relaxation and finally at low frequency region the manifestation of the conductance term representing the dc conductance of the multi-junction device. (c) 2007 Elsevier Ltd. All rights reserved.

Crystallographic and magnetic structure of polycrystalline Zn7-xNixSb2O12 spinels

The crystallographic and magnetic structure of sintered, polycrystalline samples of zinc-antimony spinel, Zn7-xNixSb2O12, have been investigated. The samples were prepared by the modified polymeric precursors method. The magnetic contributions of the Ni2+ ions distributed in three non-equivalent crystallographic sites were investigated, revealing the occurrence of different magnetic regimes. A hysteresis response in the magnetic susceptibility indicates a spin-glasslike behavior at low temperatures. (C) 2000 Elsevier B.V. S.A. All rights reserved.

Qualitative evaluation of active potential barriers in SnO2-based polycrystalline devices by electrostatic force microscopy

This paper discuss the qualitative use of electrostatic force microscopy to study the grain boundary active potential barrier present in dense SnO2-based polycrystalline semiconductors. The effect of heat treatment under rich- and poor-oxygen atmospheres was evaluated while especially considering the number of active barriers at grain boundary regions. The results show that the number of active barriers decrease after heat treatment in an oxygen-poor atmosphere and increase after heat treatment in oxygen-rich atmospheres. The observed effect was explained by considering the presence of oxidized transition metal elements segregated at grain boundary regions which leads to the p-type character of this region, in agreement with the atomic barrier formation mechanism in metal oxide varistor systems.