Effect of lattice orientation on crack tip constraint in ductile single crystals

In this work, the effect of lattice orientation on the fields prevailing near a notch tip is investigated pertaining to various constraint levels in FCC single crystals. A modified boundary layer formulation is employed and numerical solutions under mode I, plane strain conditions are generated by assuming an elastic-perfectly plastic FCC single crystal. The analysis is carried out corresponding to different lattice orientations with respect to the notch line. It is found that the near-tip deformation field, especially the development of kink or slip shear bands is sensitive to the constraint level. The stress distribution and the size and shape of the plastic zone near the notch tip are also strongly influenced by the level of T-stress. The present results clearly establish that ductile single crystal fracture geometries would progressively lose crack tip constraint as the T-stress becomes more negative irrespective of lattice orientation. Also, the near-tip field for a range of constraint levels can be characterized by two-parameters such as K-T or J-Q as in isotropic plastic solids.

The effect of T-stress on plane strain dynamic crack growth in elastic-plastic materials

In this paper, the effects of T -stress on steady, dynamic crack growth in an elastic-plastic material are examined using a modified boundary layer formulation. The analyses are carried out under mode I, plane strain conditions by employing a special finite element procedure based on moving crack tip coordinates. The material is assumed to obey the J (2) flow theory of plasticity with isotropic power law hardening. The results show that the crack opening profile as well as the opening stress at a finite distance from the tip are strongly affected by the magnitude and sign of the T -stress at any given crack speed. Further, it is found that the fracture toughness predicted by the analyses enhances significantly with negative T -stress for both ductile and cleavage mode of crack growth.

Effect of annealing temperature on electrical and nano-structural properties of sol-gel derived ZnO thin films

Zinc oxide (ZnO) thin films have been prepared on silicon substrates by sol-gel spin coating technique with spinning speed of 3,000 rpm. The films were annealed at different temperatures from 200 to 500 A degrees C and found that ZnO films exhibit different nanostructures at different annealing temperatures. The X-ray diffraction (XRD) results showed that the ZnO films convert from amorphous to polycrystalline phase after annealing at 400 A degrees C. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on pre-cleaned silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased with increasing annealing temperature. The oxide capacitance was measured at different annealing temperatures and different signal frequencies. The dielectric constant and the loss factor (tan delta) were increased with increase of annealing temperature.

Effect of oxygen pressure on the grain and domain structure of polycrystalline 0.85PbMg(1/3)Nb(2/3)O(3)-0.15PbTiO(3) thin films studied by scanning probe microscopy

0.85PbMg(1/3)Nb(2/3)O(3)-0.15PbTiO(3) ferroelectric-relaxor thin films have been deposited on La(0.5)nSr(0.5)CoO(3)/(1 1 1) Pt/TiO(2)/SiO(2)/Si by pulsed laser ablation at various oxygen partial pressures in the range 0.05 to 0.4 Torr. All the films have a rhombohedral perovskite structure. The grain morphology and orientation are drastically affected by the oxygen pressure, studied by x-ray diffraction and scanning electron microscopy. The domain structure investigations by dynamic contact electrostatic force microscopy have revealed that the distribution of polar nanoregions and their dynamics is influenced by the grain morphology, orientation and more importantly, oxygen vacancies. The correlation length extracted from autocorrelation function images has shown that the polarization disorder decreases with oxygen pressure up to 0.3 Torr. The presence of polarized domains and their electric field induced switching is discussed in terms of internal bias field and domain wall pinning. Film deposited at 0.4 Torr presents a curious case with unique triangular grain morphology and large polarization disorder.

Effect of Te addition on the optical properties of As(2)S(3) thin film

Bilayer thin films of Te/As(2)S(3) were prepared from Te and As(2)S(3) by thermal technique under high vacuum. Optical constants were calculated by analysing the transmission spectrum in the spectral range 400-1100 nm. The optical band gap decreases with the addition of Te to As(2)S(3). The decrease of optical band gap has been explained on the basis of density of states and the increase in disorder in the system. We have irradiated the as-deposited films using a diode pumped solid state laser of 532 nm wavelength to study photo-diffusion of Te into As(2)S(3). The changes were characterised by Fourier Transform Infrared and X-ray Photoelectron Spectroscopy (XPS). The optical band gap is found to be decreased with the light irradiation which is proposed due to homopolar bond formation. The core level peaks in XPS spectra give information about different bond formation. (C) 2011 Elsevier B.V. All rights reserved.

Effect of indium doping on the electrical switching behaviour of Ge–Te glasses

Bulk Ge15Te85−x In x (1 ≤ x ≤ 11) series of glasses have been found to exhibit a threshold switching behaviour for an input current of 2 mA. An initial decrease is seen in the switching voltages (V T) with the addition of indium, which is due to the higher metallicity of indium. An increase is seen in V T above 3 at.% of indium, which proceeds until 8 at.%, with a change in slope (lower to higher) seen around 7 at.%. Beyond x = 8, a reversal in trend is exhibited in the variation of V T, with a well-defined minimum around x = 9 at.%. Based on the composition dependence of V T, it is proposed that Ge15Te85−x In x glasses exhibit an extended rigidity percolation threshold. The composition, x = 3, at which the V T starts to increase and the composition, x = 7, at which a slope change is exhibited correspond to the onset and completion, respectively, of the extended stiffness transition. Thermal studies and photoconductivity measurements also support the idea of an extended rigidity percolation in Ge15Te85−x In x glasses. In addition, the minimum seen in V T at x = 9 is associated with the chemical threshold (CT) of this glassy system.

Effect of calcium stoichiometry on the dielectric response of CaCu3Ti4O12 ceramics

CaxCu3Ti4O12 (x=0.90, 0.97, 1.0, 1.1 and 1.15) polycrystalline powders with variation in calcium content were prepared via the oxalate precursor route. The structural, morphological and dielectric properties of the ceramics fabricated using these powders were studied using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray analysis, transmission electron microscopy, electron spin resonance (ESR) spectroscopy and impedance analyzer. The X-ray diffraction patterns obtained for the x = 0.97, 1.0 and 1.1 powdered ceramics could be indexed to a body-centered cubic perovskite related structure associated with the space group Im3. The ESR studies confirmed the absence of oxygen vacancies in the ceramics that were prepared using the oxalate precursor route. The dielectric properties of these suggest that the calcium deficient sample (x = 0.97) has a reduced dielectric loss while retaining the high dielectric constant which is of significant industrial relevance. (C) 2012 Elsevier Ltd. All rights reserved.

Effect of selenium addition on the GeTe phase change memory alloys

Compositional dependent investigations of the bulk GeTe chalcogenides alloys added with different selenium concentrations are carried out by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), electron probe micro-analyzer (EPMA) and differential scanning calorimetry (DSC). The measurements reveal that GeTe crystals are predominant in alloys up to 0.20 at.% of Se content indicating interstitial occupancy of Se in the Ge vacancies. Raman modes in the GeTe alloys changes to GeSe modes with the addition of Se. Amorphousness in the alloy increases with increase of Se and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of Ge-Se and Te-Se bonds. Structural changes are explained with the help of bond theory of solids. Crystallization temperature is found to be increasing with increase of Se, which will enable the amorphous stability. For the optimum 0.50 at.% Se alloy, the melting temperature has reduced which will reduce the RESET current requirement for the phase change memory applications. (C) 2012 Elsevier B.V. All rights reserved.

Effect of doping concentration on the structural and optical properties of pure and tin doped zinc oxide thin films by nebulizer spray pyrolysis (NSP) technique

Pure and tin doped zinc oxide (Sn:ZnO) thin films were prepared for the first time by NSP technique using aqueous solutions of zinc acetate dehydrate, tin (IV) chloride fendahydrate and methanol. X-ray diffraction patterns confirm that the films are polycrystalline in nature exhibiting hexagonal wurtzite type, with (0 0 2) as preferred orientation. The structural parameters such as lattice constant ('a' and `c'), crystallite size, dislocation density, micro strain, stress and texture coefficient were calculated from X-ray diffraction studies. Surface morphology was found to be modified with increasing Sn doping concentration. The ZnO films have high transmittance 85% in the visible region, and the transmittance is found to be decreased with the increase of Sn doping concentration. The corresponding optical band gap decreases from 3.25 to 3.08 eV. Room temperature photoluminescence reveals the sharp emission of strong UV peak at 400 nm (3.10 eV) and a strong sharp green luminescence at 528 nm (2.34 eV) in the Sn doped ZnO films. The electrical resistivity is found to be 10(6) Omega-cm at higher temperature and 10(5) Omega-cm at lower temperature. (C) 2012 Elsevier Ltd. All rights reserved.

Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films

CdTe thin films of 500 thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal-insulator-metal (MIM) capacitors were fabricated using these films as a dielectric. These films have many possible applications, such as passivation for infrared diodes that operate at low temperatures (80 K). Direct-current (DC) current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on these films. Furthermore, the films were subjected to thermal cycling from 300 K to 80 K and back to 300 K. Typical minimum leakage currents near zero bias at room temperature varied between 0.9 nA and 0.1 mu A, while low-temperature leakage currents were in the range of 9.5 pA to 0.5 nA, corresponding to resistivity values on the order of 10(8) a''broken vertical bar-cm and 10(10) a''broken vertical bar-cm, respectively. Well-known conduction mechanisms from the literature were utilized for fitting of measured I-V data. Our analysis indicates that the conduction mechanism in general is Ohmic for low fields < 5 x 10(4) V cm(-1), while the conduction mechanism for fields > 6 x 10(4) V cm(-1) is modified Poole-Frenkel (MPF) and Fowler-Nordheim (FN) tunneling at room temperature. At 80 K, Schottky-type conduction dominates. A significant observation is that the film did not show any appreciable degradation in leakage current characteristics due to the thermal cycling.

Study of the effect of alkali mixture on V-O bond length in Oxyfluoro Vanadate glasses using Raman spectroscopy

Raman spectroscopic study on Oxyfluoro Vanadate glasses containing various proportions of lithium fluoride and rubidium fluoride was carried out to see an effect of mixture of alkali on vanadium-oxygen (V-O) bond length. Glasses with a general formula 40V(2)O(5) - 30BaF(2) - (30 - x) LiF - xRbF (x = 0-30) were prepared. Room temperature Raman spectra of these glass samples were recorded in back scattering geometry. The data presented is in ``reduced Raman intensity'' form with maximum peak scaled to 100. We have used v = Aexp(BR), where A and B are fitting parameters, to correlate the bond length R with Raman scattering frequency v. We observed that variation in bond length and its distribution about a most probable value can be correlated to the alkali environment present in these glasses. We also observed that all rubidium environment around the network forming unit is more homogenous than all lithium environment.

Effect of hydrogen charging on tensile properties of B-modified Ti-6Al-4V alloy

Trace addition of B to Ti and its alloys leads to a marked microstructural refinement, which in turn enhances the tensile and fatigue properties of the as-cast alloys. This can be particularly advantageous in applications wherein Ti alloys are used in the as-cast form. In some of these, the environment containing H and Ti alloy components is susceptible to embrittlement due to H uptake. Whether the addition of B to Ti-6Al-4V improves the relative mechanical performance of such cast components used in H environments is examined in this work. Cast Ti-6Al-4V-xB (0 <= x <= 0.55 wt%) alloys were H charged at 500 and 700 degrees C for up to 4 h. Microstructures and room temperature tensile properties of the resulting alloys have been evaluated. Experimental results show that charging at 700 degrees C for 2 h leads to the formation of titanium hydride in the microstructure, which in turn causes severe embrittlement. For shorter durations of charging, a marginal increase in strength was noted, which is attributed to the solid solution strengthening by H. The mechanical performance of the B modified alloys was found to be relatively higher, implying that B addition not only refines the as-cast microstructure but also is beneficial in applications that involve H environment A direct correlation between the volume fraction of TiB particles in the microstructure and the relative reduction in the strength of H-embrittled alloys suggests that the addition of B to Ti alloys, in optimum quantities, can be utilized as a strategy to design alloys that are more resistant to H embrittlement.

The effect of Se doping on spectroscopic and electrical properties of GeTe

Selenium doped thin films of GeTe alloys were investigated for their structural modifications by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron Spectroscopy (XPS) and Raman Spectroscopy. The band gap increase from 0.69 to 1.10 eV with increasing Se addition signifies the possibility of band gap tuning in the material. Disorder decreases, band widens and conductivity saturates about 0.20 at.% of Se addition. Structural changes are explained by the bond theory of solids. The as-deposited films are amorphous and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of Ge-Se and Te-Se bonds. The XPS core level spectra and Raman spectra investigation clearly indicate the formation of Ge-Se, GeTe2 and Te-Se bonds with Se addition. Crystallization temperature is found to be increasing with Se and the 0.10 at.% Se alloy is found to have a higher resistance contrast compared to other Se concentration alloys. Up to 0.10 at.% of Se addition can enhance GeTe phase change memory properties. (C) 2013 Elsevier B.V. All rights reserved.

Effect of zinc substitution on the nanocobalt ferrite powders for nanoelectronic devices

Zinc substituted cobalt ferrite powders {Co(1-x)ZnxFe2O4} (0.0 <= x <= 0.5) were prepared by the solution combustion method. The structural, morphological, magnetic and electrical properties of as synthesized samples were studied. Powder X-ray diffraction patterns reveals single phase, cubic spinel structure with space group No. Fd (3) over barm (227). As zinc concentration increases, the lattice constant increases and the crystallite size decreases. The minimum crystallite size of similar to 12 nm was observed for x = 0.5 composition. The synthesized ferrite compounds show ferrimagnetic behavior, with coercivity value of 10779 Oe (Hard ferrite) at 20 K and 1298 Oe (soft ferrite) at room temperature (RT). The maximum saturation magnetization recorded for the Co0.5Zn0.5Fe2O4 composition was 99.78 emu g(-1) and 63.83 emu g(-1) at 20 K and RT respectively. The dielectric parameters such as dielectric constant, loss tangent and AC conductivity were determined as a function of frequency at RT. The magnetic and dielectric properties of the samples illustrates that the materials were quite useful for the fabrication of nanoelectronic devices. (C) 2013 Elsevier B.V. All rights reserved.

Effect of chemical treatment on surface characteristics of sputter deposited Ti-rich NiTi shape memory alloy thin-films

NiTi thin-films were deposited by DC magnetron sputtering from single alloy target (Ni/Ti: 45/55 aL.%). The rate of deposition and thickness of sputter deposited films were maintained to similar to 35 nm min(-1) and 4 mu m respectively. A set of sputter deposited NiTi films were selected for specific chemical treatment with the solution comprising of de-ionized water, HF and HNO3 respectively. The influence of chemical treatment on surface characteristics of NiTi films before and after chemical treatment was investigated for their structure, micro-structure and composition using different analytical techniques. Prior to chemical treatment, the composition of NiTi films using energy dispersive X-ray dispersive spectroscopy (EDS), were found to be 51.8 atomic percent of Ti and 48.2 atomic percent of Ni. The structure and morphology of these films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD investigations, demonstrated the presence of dominant Austenite (110) phase along with Martensite phase, for untreated NiTi films whereas some additional diffraction peaks viz. (100), (101), and (200) corresponding to Rutile and Anatase phase of Titanium dioxide (TiO2) along with parent Austenite (110) phase were observed for chemically treated NiTi films. FTIR studies, it can be concluded that chemically treated films have higher tendency to form metal oxide/hydroxide than the untreated NiTi films. XPS investigations, demonstrated the presence of Ni-free surface and formation of a protective metal oxide (TiO2) layer on the surface of the films, in both the cases. The extent of the formation of surface oxide layer onto the surface of NiTi films has enhanced after chemical treatment. (C) 2014 Elsevier B.V. All rights reserved.