Effect Surface Roughness on the Adhesion of Microstructures

考虑实际微结构表面粗糙度对粘着特性的影响,利用表面力以及表征微尺度粘着弹性接触理论的粘着数对微机械中典型的微悬臂梁结构的剥离数(peel number)进行修正。结果表明,由于表面粗糙度的存在,微结构中的粘着作用削弱,而这种作用可以利用粘着参数(adhesion parameter)定量刻画。

Nonequilibrium microstructures and phase evolutions of an iron-based laser clad coating

The microstructural and compositional features of the laser-solidified microstructures and phase evolutions occurring during high temperature tempering were investigated by using analytical electron microscopy with energy dispersive X-ray analysis. The cladded alloy, a powder mixture of Fe, Cr, W, Ni and C with a weight ratio of 10:5:1:1:1, was processed with a 3 kW continuous wave CO2 laser. The cladded coating possessed the hypoeutectic microstructure of the primary dendritic gamma-austenite and interdendritic eutectic consisting of (gamma+M7C3). The gamma-austenite is a nonequilibrium phase with extended solid solution of alloying elements. And, a great deal of fine structures, i.e., a high density of dislocations, twins, and stacking faults existed in austenite phase. During high temperature aging, the precipitation of M23C6, MC and M2C in austenite and in situ transformation of M7C3(+gamma) --> M23C6 and M7C3+gamma --> M6C occurred. The laser clad coating revealed an evident secondary hardening and superior impact wear resistance.

An anisotropic elastic-plastic constitutive model for single and polycrystalline metals. II—Experiments and predictions concerning thin-walled tubular OFHC copper

Predictions based on an anisotropic elastic-plastic constitutive model proposed in the first part of this paper are compared with the experimental stress and strain data on OHFC copper under first torsion to about 13% and partial unloading, and then tension-torsion to about 10% along eight different loading paths. This paper also describes the deformation and stress of the thin-walled tubular specimen under finite deformation, the numerical implementation of the model, and the detailed procedure for determining the material parameters in the model. Finally, the model is extended to a general representation of the multiple directors, and the elastic-viscoplastic extension of the constitutive model is considered.

Evolution of thermoplastic shear localization and related microstructures in Awl/SiCp composites under dynamic compression

The localized shear deformation in the 2024 and 2124 Al matrix composites reinforced with SiC particles was investigated with a split Hopkinson pressure bar (SHPB) at a strain rate of about 2.0x10(3) s(-1). The results showed that the occurrence of localized shear deformation is sensitive to the size of SiC particles. It was found that the critical strain, at which the shear localization occurs, strongly depends on the size and volume fraction of SiC particles. The smaller the particle size, the lower the critical strain required for the shear localization. TEM examinations revealed that Al/SiCp interfaces are the main sources of dislocations. The dislocation density near the interface was found to be high and it decreases with the distance from the particles. The Al matrix in shear bands was highly deformed and severely elongated at low angle boundaries. The Al/SiCp interfaces, particularly the sharp corners of SiC particles, provide the sites for microcrack initiation. Eventual fracture is caused by the growth and coalescence of microcracks along the shear bands. It is proposed that the distortion free equiaxed grains with low dislocation density observed in the center of shear band result from recrystallization during dynamic deformation.

An anisotropic elastic-plastic constitutive model for single and polycrystalline metals .1. Theoretical developments

An anisotropic elastic-plastic constitutive model for single and polycrystalline metals is proposed. The anisotropic hardening of single crystals, at first, is discussed with the viewpoint of yield surface and a new formulation of it is proposed. Then, a model for the anisotropic hardening of polycrystals is suggested by increasing the number of slip systems and incorporating the interaction of all slip systems. The interaction of grains through grain boundaries is shown to be similar to, and incorporated into, the interaction of slip systems in grains. The numerical predictions and their comparisons with experiments will follow in Part II of this paper.

Microstructures of explosively consolidated rapidly solidified aluminum and Al-Li alloy powders

The microstructures and the characteristics of water-atomized, nitrogen gas-atomized Al powders and ultrasonic argon gas-atomized Al-Li alloy powder were investigated by means of metallography, SEM, Auger electron spectroscopy and X-ray diffraction techniques. Rapidly solidified powders were explosively consolidated into different sized cylinders under various explosive parameters. The explosively consolidated compacts have been tested and analysed for density microhardness, retention of rapidly solidified microstructures, interparticle bonding, fractography and lattice distortion. It is shown that the explosive consolidation technique is an effective method for compacting rapidly solidified powders. The characteristics of surface layers play a very important role in determining the effectiveness of the joints sintered, and the Al-Li alloy explosive compacts present an abnormal softening appearance compared to the original powder.

Microstructures induced in the bulk of SrTiO3 crystal by a femtosecond laser

Microstructures with the total length of hundreds of mu m were induced by fixing the focal point of the femtosecond laser at a certain depth in the bulk of SrTiO3 crystal. By different combination of the focusing conditions with the laser parameters, different morphologies have been observed, such as void array, necklace-shaped structures, continuous/segmental filaments and etc. The possible mechanism of the formation of those diversiform structures is discussed.

Silicide formation and the interaction of metals with polycrystalline Si

The main factors affecting solid-phase Si-metal interactions are reported in this work. The influence of the orientation of the Si substrates and the presence of impurities in metal films and at the Si-metal interface on the formation of nickel and chromium silicides have been demonstrated. We have observed that the formation and kinetic rate of growth of nickel silicides is strongly dependent on the orientation and crystallinity of the Si substrates; a fact which, up to date, has never been seriously investigated in silicide formation. Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of CrSi₂. The potentiality and use of silicides as a diffusion barrier in metallization on silicon devices were also investigated.

Two phases, Ni₂Si and NiSi, form simultaneously in two distinct sublayers in the reaction of Ni with amorphous Si, while only the former phase was observed on other substrates. On (111) oriented Si substrates the growth rate is about 2 to 3 times less than that on <100> or polycrystalline Si. Transmission electron micrographs establish-·that silicide layers grown on different substrates have different microcrystalline structures. The concept of grain-boundary diffusion is speculated to be an important factor in silicide formation.

The composition and kinetic rate of CrSi₂ formation are not influenced by the underlying Si substrate. While the orientation of the Si substrate does not affect the formation of CrSi₂ , the purity of the Cr film and the state of Si-Cr interface become the predominant factors in the reaction process. With an interposed layer of Pd₂Si between the Cr film and the Si substrate, CrSi₂ starts to form at a much lower temperature (400°C) relative to the Si-Cr system. However, the growth rate of CrSi₂ is observed to be independent of the thickness of the Pd2Si layer. For both Si-Cr and Si-Pd₂Si-Cr samples, the growth rate is linear with time with an activation energy of 1.7 ± 0.1 ev.

A tracer technique using radioactive ³¹Si (T_1/2 = 2.26 h) was used to study the formation of CrSi₂ on Pd₂Si. It is established from this experiment that the growth of CrSi₂ takes place partly by transport of Si directly from the Si substrate and partly by breaking Pd₂Si bonds, making free Si atoms available for the growth process.

The role of CrSi₂ in Pd-Al metallization on Si was studied. It is established that a thin CrSi₂ layer can be used as a diffusion barrier to prevent Al from interacting with Pd₂Si in the Pd-Al metallization on Si.

As a generalization of what has been observed for polycrystalline-Si-Al interaction, the reactions between polycrystalline Si (poly Si) and other metals were studied. The metals investigated include Ni, Cr, Pd, Ag and Au. For Ni, Cr and Pd, annealing results in silicide formation, at temperatures similar to those observed on single crystal Si substrates. For Al, Ag and Au, which form simple eutectics with Si annealing results in erosion of the poly Si layer and growth of Si crystallites in the metal films.

Backscattering spectrometry with 2.0 and 2.3 MeV ⁴He ions was the main analytical tool used in all our investigations. Other experimental techniques include the Read camera glancing angle x-ray diffraction, scanning electron, optical and transmission electron microscopy. Details of these analytical techniques are given in Chapter II.