990 resultados para POLY(METAL TETRATHIOOXALATES)


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The [Ru(NH3)5(H2O)]2+ and trans-[Ru(NH3)4SO2(H2O)]2+ complexes ions were immobilized on poly(4-vinylpyridine) (4-PVP) through reactions in aqueous solutions. The stability of the imobilized complexes was checked in aqueous solution in the pH 2.0-8.0 range. The number of pyridinic nitrogens in the polymer 4-PVP is 2.80±0.05 mmol/g according to nitrogen elemental analysis. Potentiometric titration experiments showed that the accessible nitrogen, in aqueous medium, was 0.94±0.02 mmol/g with a p Ka value of 7.4±0.2. In addition, ruthenium and sulfate analysis has demonstrated that about 15% of the accessible nitrogen sites are able to coordinate to the metal centers. The characterization of the immobilized complexes was made through diffuse electronic and infrared spectroscopies and differential pulse and cyclic voltammetries. © 1993 Plenum Publishing Corporation.

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The admittance spectra and current-voltage (I-V) characteristics are reported of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors employing cross-linked poly(amide-imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan delta values as low as 7 x 10(-3) over most of the range. Except at the lowest voltages, the I-V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell-Wagner frequency response from which the transverse bulk hole mobility was estimated to be similar to 2 x 10(-5) cm(2) V(-1)s(-1) or similar to 5 x 10(-8) cm(2) V(-1)s(-1) depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be similar to 5 x 10(10) cm(-2) eV(-1) or similar to 9 x 10(10) cm(-2) eV(-1) again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices. (c) 2012 Elsevier B.V. All rights reserved.

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Die Bioverkapselung ist eine faszinierende Methode, um biologische Materialien einschließlich Zellen in Siliziumdioxid, Metalloxiden oder hybriden Sol-Gel-Polymeren zu immobilisieren. Bisher wurde nur die Sol-Gel-Vorläufertechnologie genutzt, um Bakterien- oder Hefezellen in Siliziumdioxid zu immobilisieren. Hierfür wurden verschiedene Reagenzien als wässrige Vorläufer getestet, um poly(Silicate) auf Biomolekülen (Bhatia et al., 2000) oder Zellen (Liu und Chen 1999; Coradin und Livage, 2007) zu bilden. Einer der erfolgreichsten bisherigen Methoden verwendet eine Mischung aus Silicaten und kolloidalem Silica. Diese initialen Vorläufer werden durch die Zugabe von Salzsäure neutralisiert, was die Gelbildung fortschreiten lässt und die Verkapselung von Bakterien in einem Silica-Netzwerk zur Folge hat (Nassif et al., 2003). Mit der Entdeckung von Silicatein, einem Enzym, das aus Demospongien isoliert wurde und die Bildung von poly(Silicat) katalysiert, wurde es möglich, poly(Silicat) unter physiologischen Bedingungen zu synthetisieren. Silicatein wurde rekombinant in E. coli hergestellt und ist in der Lage, bei Raumtemperatur, neutralem pH-Wert und in wässrigen Puffersystemen aus Siliziumalkoxiden poly(Silicat) zu bilden (Krasko et al., 2000; Müller et al., 2007b; Zhou et al., 1999). In vivo katalysiert Silicatein die Synthese der Silicathülle der Schwamm-Spiculae (Skelettelemente; Müller et al., 2005b; Müller et al., 2007a; Müller et al., 2007b; Schröder et al., 2007a). Dieses Biosilica wurde in Form von Silica-Nanospheren mit Durchmessern zwischen 100 nm und 250 nm organisiert vorgefunden (Pisera 2003; Tahir et al., 2005). Mit dieser Arbeit konnte gezeigt werden, dass Escherichia coli erfolgreich mit dem Silicatein-Gen transformiert werden kann. Das Level der Proteinexpression kann in Anwesenheit von Isopropyl-β-D-thiogalaktopyranosid (IPTG) effizient erhöht werden, indem man die Bakterienzellen gleichzeitig mit Kieselsäure inkubiert. Dieser Effekt konnte sowohl auf Ebene der Synthese des rekombinanten Proteins durch Western Blot als auch durch Immunfluoreszenzmikroskopie nachgewiesen werden. Das heterolog produzierte Silicatein besitzt enzymatische Aktivität und kann die Polymerisation von Kieselsäure katalysieren. Dies konnte sowohl durch Färbung mit Rhodamin123, als auch durch Reaktion der nicht polymerisierten, freien Kieselsäure mit dem ß-Silicomolybdato-Farbsystem (Silicomolybdänblau) nachgewiesen werden. Elektronenmikroskopische Untersuchungen zeigten, dass nur die silicateinexprimierenden Bakterien während des Wachstums in Anwesenheit von Kieselsäure eine viskose Hülle um Zelle herum bilden. Ebenfalls konnte gezeigt werden, dass Silicatein-α aus Suberites domuncula nach Transformation in E. coli an die Zelloberfläche dieser Zellen transportiert wurde und dort seine enzymatische Funktion beibehielt. Die Silicathülle wurde mittels Raster-Elektronenmikroskopie (REM) analysiert. Die Bakterien, die Silicatein exprimierten und poly(Silicat) an ihrer Oberfläche synthetisierten, zeigten die gleichen Wachstumsraten wie die Bakterien, die das Gen nicht enthielten. Schlussfolgernd lässt sich sagen, dass die silicateinvermittelte Verkapselung von Bakterien mit poly(Silicat) die Bandbreite der Anwendung von Bakterien für die Produktion von rekombinanten Proteinen verbessern, erweitern und optimieren könnte.

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A set of varying-thickness Au-films were thermally evaporated onto poly(styrene-co-acrylonitrile) thin film surfaces. The Au/PSA bi-layer targets were then implanted with 50 keV N+ ions to a fluence of 1 × 1016 ions/cm2 to promote metal-to-polymer adhesion and to enhance their mechanical and electrical performance. Electrical conductivity measurements of the implanted Au/PSA thin films showed a sharp percolation behavior versus the pre-implant Au-film thickness with a percolation threshold near the nominal thickness of 44 Å. The electrical conductivity results are discussed along with the film microstructure and the elemental diffusion/mixing within the Au/PSA interface obtained by scanning electron microscopy (SEM) and ion beam analysis techniques (RBS and ERD).

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The dielectric properties of pure low to medium molecular weight poly(ethylene glycol) and poly(propylene glycol) and a variety of their salt complexes have been studied through the measurement of the dielectric permittivity and dielectric loss over a range of frequency and temperature. The major proportion of this study has been concerned with the examination of the nature of the interaction between mercuric chloride and poly(propylene glycol) (PPG). Other salt-poly-ether combinations have also been considered such as cobalt chloride-PPG cadmium chloride-PPG zinc chloride-PPG and ferric chloride-PEG (polyethylene glycol). Some of this work was also supported by chemical shift and spin-lattice Nuclear Magnetic Resonance (N.M.R.) spectroscopy. The dielectric permittivity data were analysed using the Onsager relation to calculate the mean dipole moment per dipolar unit. This approach was employed in the discussion of various models proposed for the structure of salt-polyether complexes. The effect of mercuric chloride on the statistical conformations of poly(propylene-glycol) was studied in a quantitative manner using the relationships of marchal-Benoit. The dielectric relaxation activation energy and mean energy difference between gauche and trans conformations of poly(propylene glycol) in the presence of mercuric chloride, both showed a distinct minimum when the concentration of mercuric chloride was close to 5 mole %. Opposite behaviour was observed for the Cole-Cole parameter. It was concluded that the majority of the dielectric data could be rationalised in terms of a 5-membered cyclic complex formed between mercuric chloride and PPG in which the complexed segment of the polyether-(OMeCH2CH2O)- adopted either gauche or cis conformations.

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Poly(ethylene oxide) has been coupled to poly(3-hexylthiophene) using esterification to produce pure diblock copolymers, highly relevant for use in organic electronic devices. The new synthetic route described herein uses a metal-free coupling step, for the first time, to afford well-defined polymers in high yields following facile purification.

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Materials that combine photoluminescence, optical transparency and facile processability are of high importance in many applications. This article reports on the development of photoluminescent poly(methyl methacrylate) materials based on novel highly emissive anionic molybdenum cluster complex [{Mo6I8}(OTs)6]2– (where OTs– is the p-toluenesulfonate ion). The materials were obtained by both solution and bulk copolymerisation of methyl methacrylate and (dMDAEMA)2[{Mo6I8}(OTs)6], where dMDAEMA+ is the polymerisable cation [2-(methacryloyloxy)ethyl]dimethyl-dodecylammonium. Evaluation of the resultant hybrid materials showed that one could combine the excellent photoluminescent properties of the cluster complex with the transparency and processability of PMMA.

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A detailed investigation both of the DC and of the AC electrical properties of the Schottky barrier formed between aluminium and electrodeposited poly(3-methylthiophene) is reported. The devices show rectification ratios up to 2 x 10(4) which can be increased further after post-metal annealing. The reverse characteristics of the devices follow predictions based on the image-force lowering of the Schottky barrier, from which the doping density can be estimated, As the forward voltage increases, the device current is limited by the bulk resistance of the polymer with some evidence for injection limitation at the gold counter-electrode at high bias. In the bulk-limited regime, the device current is thermally activated near room temperature with an activation energy in the range 0.2-0.3 eV. Below about 150 K the device current is almost independent of temperature. Capacitance-voltage plots obtained at frequencies well below the device relaxation frequency indicate the presence of two distinct acceptor states, A set of shallow acceptor states are active in forward bias and are believed to determine the bulk conductivity of the polymer. A set of deeper accepters are active only for very small forward voltages and for all reverse voltages, namely when band banding causes the Fermi energy to cross these states. The density of these deeper states is approximately an order of magnitude greater than that of the shallow states. Evidence is presented also for the influence of fabrication conditions on the formation of an insulating interfacial layer at the rectifying interface. The presence of such a layer leads to inversion at the polymer surface and a modification of the I-V characteristics.

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A detailed investigation both of the DC and of the AC electrical properties of the Schottky barrier formed between aluminium and electrodeposited poly(3-methylthiophene) is reported. The devices show rectification ratios up to 2 x 10(4) which can be increased further after post-metal annealing. The reverse characteristics of the devices follow predictions based on the image-force lowering of the Schottky barrier, from which the doping density can be estimated, As the forward voltage increases, the device current is limited by the bulk resistance of the polymer with some evidence for injection limitation at the gold counter-electrode at high bias. In the bulk-limited regime, the device current is thermally activated near room temperature with an activation energy in the range 0.2-0.3 eV. Below about 150 K the device current is almost independent of temperature. Capacitance-voltage plots obtained at frequencies well below the device relaxation frequency indicate the presence of two distinct acceptor states, A set of shallow acceptor states are active in forward bias and are believed to determine the bulk conductivity of the polymer. A set of deeper accepters are active only for very small forward voltages and for all reverse voltages, namely when band banding causes the Fermi energy to cross these states. The density of these deeper states is approximately an order of magnitude greater than that of the shallow states. Evidence is presented also for the influence of fabrication conditions on the formation of an insulating interfacial layer at the rectifying interface. The presence of such a layer leads to inversion at the polymer surface and a modification of the I-V characteristics.

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Materials that combine photoluminescence, optical transparency and facile processability are of high importance in many applications. This article reports on the development of photoluminescent poly(methyl methacrylate) materials based on novel highly emissive anionic molybdenum cluster complex [{Mo6I8}(OTs)6]2- (where OTs- is the p-toluenesulfonate ion). The materials were obtained by both solution and bulk copolymerisation of methyl methacrylate and (dMDAEMA)2[{Mo6I8}(OTs)6], where dMDAEMA+ is the polymerisable cation [2-(methacryloyloxy)ethyl]dimethyl-dodecylammonium. Evaluation of the resultant hybrid materials showed that one could combine the excellent photoluminescent properties of the cluster complex with the transparency and processability of PMMA.