Effect of electrical parameters on morphology and in-vitro corrosion resistance of plasma electrolytic oxidized films formed on zirconium

The objective of the present work is to study the effect of electrical process Parameters (duty cycle and frequency) on morphological, structural, and in-vitro corrosion characteristics of oxide films formed on zirconium by plasma electrolytic oxidation in an electrolyte system consisting of 5 g/L of trisodium orthophosphate. The oxide films fabricated on zirconium by systematically varying the duty cycle and frequency are characterized for its phase composition, surface morphology, chemical composition, roughness, wettability, surface energy, scratch resistance, corrosion resistance, apatite forming ability and osteoblast cell adhesion. X-ray diffraction pattern of all the oxide films showed the predominance of m-ZrO2 phase. Dense and uniform films with thickness varying from 9 to 15 mu m and roughness in the range of 0.62 to 1.03 mu m are formed. Porosity of oxide films is found to be increased with an increase infrequency. The water contact angle results demonstrated that the oxide films exhibited similar hydrophilicity to zirconium substrate. All oxide films showed improved corrosion resistance, as indicated by far lower corrosion current density and passive corrosion potential compared to the zirconium substrate in simulated body fluid environment, and among the four different combinations of duty cycle and frequency employed in the present study, the oxide film formed at 95% duty cycle and 50 Hz frequency (HDLF film) showed superior pitting corrosion resistance, which can be attributed to its pore free morpholOgy. Scratch test results showed that the HDLF oxide film adhered firmly to the substrate by developing a notable scratch resistance at 19.5 +/- 1.2.N. Besides the best corrosion resistance and scratch retistance, the HDLF film also showed good apatite forming ability and osteo sarcoma cell adhesion on its surface. The HDLF oxide film on zirconium with superior surface characteristics is believed to be useful for various types of implants in the dental and orthopedic fields. (C) 2015 Elsevier B.V. All rights reserved.

Theoretical Insights to Niobium-Doped Monolayer MoS2-Gold Contact

We report a first principles study of the electronic properties for a contact formed between Nb-doped monolayer MoS2 and gold for different doping concentrations. We first focus on the shift of energy levels in band structure and the density of states with respect to the Fermi level for a geometrically optimized 5 x 5 MoS2 supercell for both pristine and Nb-doped structures. The doping is achieved by substituting Mo atoms with Nb atoms at random positions. It is observed that for an experimentally reported sheet hole doping concentration of (rho(2D)) 1.8 x 10(14) cm(-2), the pristine MoS2 converts to degenerate p-type semiconductor. Next, we interface this supercell with six layers of < 111 > cleaved surface of gold to investigate the contact nature of MoS2-Au system. By careful examination of projected band structure, projected density of states, effective potential and charge density difference, we demonstrate that the Schottky barrier nature observed for pure MoS2-Au contact can be converted from n-type to p-type by efficient Nb doping.

Harmonic analysis of DC capacitor current in sinusoidal and space-vector modulated neutral-point-clamped inverters

The voltage ripple and power loss in the DC-capacitor of a voltage source inverter depend on the harmonic currents flowing through the capacitor. This paper presents a double Fourier series based analysis of the harmonic contents of the DC capacitor current in a three-level neutral-point clamped (NPC) inverter, modulated with sine-triangle pulse-width modulation (SPWM) or conventional space vector pulse-width modulation (CSVPWM) schemes. The analytical results are validated experimentally on a 3-kVA three-level inverter prototype. The capacitor current in an NPC inverter has a periodicity of 120(a similar to) at the fundamental or modulation frequency. Hence, this current contains third-harmonic and triplen-frequency components, apart from switching frequency components. The harmonic components vary with modulation index and power factor for both PWM schemes. The third harmonic current decreases with increase in modulation index and also decreases with increase in power factor in case of both PWM methods. In general, the third harmonic content is higher with SPWM than with CSVPWM at a given operating condition. Also, power loss and voltage ripple in the DC capacitor are estimated for both the schemes using the current harmonic spectrum and equivalent series resistance (ESR) of the capacitor.

Synthesis, and crystal and electronic structure of sodium metal phosphate for use as a hybrid capacitor in non-aqueous electrolyte

Energy storage devices based on sodium have been considered as an alternative to traditional lithium based systems because of the natural abundance, cost effectiveness and low environmental impact of sodium. Their synthesis, and crystal and electronic properties have been discussed, because of the importance of electronic conductivity in supercapacitors for high rate applications. The density of states of a mixed sodium transition metal phosphate (maricite, NaMn1/3Co1/3Ni1/3PO4) has been determined with the ab initio generalized gradient approximation (GGA)+Hubbard term (U) method. The computed results for the mixed maricite are compared with the band gap of the parent NaFePO4 and the electrochemical experimental results are in good agreement. A mixed sodium transition metal phosphate served as an active electrode material for a hybrid supercapacitor. The hybrid device (maricite versus carbon) in a nonaqueous electrolyte shows redox peaks in the cyclic voltammograms and asymmetric profiles in the charge-discharge curves while exhibiting a specific capacitance of 40 F g(-1) and these processes are found to be quasi-reversible. After long term cycling, the device exhibits excellent capacity retention (95%) and coulombic efficiency (92%). The presence of carbon and the nanocomposite morphology, identified through X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) studies, ensures the high rate capability while offering possibilities to develop new cathode materials for sodium hybrid devices.

Effect of current density on the microstructure and corrosion properties of plasma electrolytic oxidation (PEO) coatings on AM50 Mg alloy produced in an electrolyte containing clay additives

Plasma electrolytic oxidation coatings were produced on AM50 Mg alloy in alkaline phosphate based electrolyte with montmorillonite clay additives employing current densities of 30, 60, and 120 mA/cm(2). The effect of current density on the microstructure and corrosion properties of the coating was investigated. The clay additives got melted and reactively incorporated into the coating forming an amorphous phase, at all the current densities. However, the coating was predominantly amorphous only at 30 mA/cm(2) and with increasing current density, increasing fractions of crystalline phases were formed. Higher current densities resulted in increased thickness of the coating, but reduced the compactness of the coatings. Electrochemical impedance spectroscopy tests in 0.5 wt.% (0.08 M) and 3.5 wt.% (0.6 M) NaCl solution revealed that the coatings processed at 30 mA/cm(2) exhibited a relatively better initial corrosion resistance owing to its relatively defect-free barrier layer and compactness of the coating. However, the presence of amorphous phases in significant amounts and lack of MgO in the coating resulted in increased rate of dissolution of the coatings and degradation of corrosion resistance. Coatings produced at higher current densities exhibited initial inferior corrosion resistance due to a more defective barrier layer and increased porosity in pore band and outer porous layer. However, the increased amount of crystalline phases and an increased amount of MgO, which resisted dissolution, counterbalanced the negative effects of defective barrier and increased porosity resulting in a relatively lower rate of the degradation of the corrosion resistance. Thus, the corrosion resistance of all the coatings continuously decreased with time and became similar after prolonged immersion in NaCl solution. Increasing current density, therefore, did not prove to be beneficial for the improvement of the corrosion performance of the PEO coatings. (C) 2016 Elsevier B.V. All rights reserved.

Critical investigation of high performance spin-coated high-kappa titania thin films based MOS capacitor

We report the tunable dielectric constant of titania films with low leakage current density. Titanium dioxide (TiO2) films of three different thicknesses (36, 63 and 91 nm) were deposited by the consecutive steps of solution preparation, spin-coating, drying, and firing at different temperatures. The problem of poor adhesion between Si substrate and TiO2 insulating layer was resolved by using the plasma activation process. The surface roughness was found to increase with increasing thickness and annealing temperature. The electrical investigation was carried out using metal-oxide-semiconductor structure. The flat band voltage (V-FB), oxide trapped charge (Q(ot)), dielectric constant (kappa) and equivalent oxide thicknesses are calculated from capacitance-voltage (C-V) curves. The C-V characteristics indicate a thickness dependent dielectric constant. The dielectric constant increases from 31 to 78 as thickness increases from 36 to 91 nm. In addition to that the dielectric constant was found to be annealing temperature and frequency dependent. The films having thickness 91 nm and annealed at 600 A degrees C shows the low leakage current density. Our study provides a broad insight of the processing parameters towards the use of titania as high-kappa insulating layer, which might be useful in Si and polymer based flexible devices.

Correlation between Discharging Property and Coatings Microstructure during Plasma Electrolytic Oxidation

The voltage-current properties during plasma electrolytic discharge were determined by measuring the current density and cell voltage as functions of processing time and then by mathematical transformation. Correlation between discharge I-V property and the coatings microstructure on aluminum alloy during plasma electrolfic oxidation was determined by comparing the voltage-current properties at different process stages with SEM results of the corresponding coatings. The results show that the uniform passive film corresponds to a I-V property with one critical voltage, and a compound of porous layer and shred ceramic particles corresponds to a I-Vproperty with two critical voltages. The growth regularity of PEO cermet coatings was also studied.

Amorphous Coatings Deposited on Aluminum Alloy by Plasma Electrolytic Oxidation

Amorphous [Al-Si-O] coatings were deposited on aluminum alloy by plasma electrolytic oxidation (PEO). The process parameters, composition, micrograph, and mechanical property of PEO amorphous coatings were investigated. It is found that the growth rate of PEO coatings reaches 4.44 mu m/min if the current density is 0.9 mA/mm(2). XRD results show that the PEO coatings are amorphous in the current density range of 0.3-0.9 mA/mm(2). EDS results show that the coatings are composed of O, Si and At elements. SEM results show that the coatings are porous. Nano indentation results show that the hardness of the coatings is about 3 - 4 times of that of the substrate, while the elastic modulus is about the same with the substrate. Furthermore, a formation mechanism of amorphous PEO coatings was proposed.

Structure and mechanical properties of ceramic coatings fabricated by plasma electrolytic oxidation on aluminized steel

Ceramic coatings were formed by plasma electrolytic oxidation (PEO) on aluminized steel. Characteristics of the average anodic voltages versus treatment time were observed during the PEO process. The micrographs, compositions and mechanical properties of ceramic coatings were investigated. The results show that the anodic voltage profile for processing of aluminized steel is similar to that for processing bulk Al alloy during early PEO stages and that the thickness of ceramic coating increases approximately linearly with the Al layer consumption. Once the Al layer is completely transformed, the FeAl intermetallic layer begins to participate in the PEO process. At this point, the anodic voltage of aluminized steel descends, and the thickness of ceramic coating grows more slowly. At the same time, some micro-cracks are observed at the Al2O3/FeAl interface. The final ceramic coating mainly consists of gamma-Al2O3, mullite, and alpha-Al2O3 phases. PEO ceramic coatings have excellent elastic recovery and high load supporting performance. Nanohardness of ceramic coating reaches about 19.6 GPa. (c) 2007 Elsevier B. V. All rights reserved.

Mechanistic and reactivity studies of bent metallocene complexes of niobium and tantalum

A variety of olefin hydride complexes of niobium and tantalum has been prepared in order to study their reactivity and to gain insight into organometallic reaction mechanisms. Examination of a series of ethylene and propylene complexes of niobocene (CP_2Nb; Cp = η^5-C_5H_5), permethylniobocene (Cp*_2Nb; Cp* = η^5-C_5(CH_3)_5), tantalocene, and permethyltantalocene has indicated that there are both large electronic and steric effects deriving from the metal (and its ancillary ligands) in the olefin insertion (β-migratory insertion) process. Furthermore, a thermodynamic and kinetic analysis has been completed for a series of substituted styrene complexes of niobocene in order to better understand the important electronic properties of the olefin. The results are in accord with a concerted four-center process with only moderate charge development.

The special case of β-migratory insertion of a hydride ligand into coordinated benzyne has also been studied for the permethyltantalocene system. The coordinatively unsaturated (sixteen electron) phenyl tautomer, which is made accessible by the facile benzyne hydride insertion reaction, readily reacts with a variety of ligands, L, to afford Cp*_2 Ta(C_6H_5)L complexes (L = CO, O_2, NC≡R, :CH_2, H_2, etc.). This family of compounds exhibits interesting reactivity (a-migratory insertion, O_2 activation, and reductive elimination) which is discussed in some detail.

Finally a series of paramagnetic seventeen electron Cp*_2 TaX_2 (X = halide, alkyl, hydride) complexes, and the corresponding cationic and anionic species, have been prepared and studied. The odd electron neutral complexes exhibit surprising thermal stability and undergo very little reactivity. While the chemistry of the anionic compounds is almost completely dominated by their potent reducing power, that of the cations is quite diverse and amenable for study. Therefore the syntheses and reactivity (1 ,2-eliminations, ligand insertions, and deprotonation reactions) of these coordinatively unsaturated sixteen electron species are presented.

Organotitanium and niobium chemistry. I. Structure and reactivity of a titanium ethylene complex. II. Reactivity of decamethyl niobocene derivatives

The synthesis and X-ray diffraction study of bis(pentamethylcyclopentadienyl) ethylene titanium (I) are reported. This complex represents the first example of an isolable ethylene adduct of a group IV metal, a key intermediate in Ziegler-Natta olefin polymerization schemes. While treatment of I with ethylene leads to only traces of polymer after months, I participates in a wide range of stoichiometric and catalytic reactions. These include the catalytic conversion of ethylene specifically to butadiene and ethane and the catalytic isomerization of alkenes. Detailed studies have been carried out on the stoichiometric reactions of I with nitriles and alkynes. At low temperatures, nitriles react to form metallacycloimine species which more slowly undergo a formal 1,3-hydrogen shift to generate metallacycloeneamines. The lowest energy pathway for this rearrangement is an intramolecular hydrogen shift which is sensitive to the steric bulk of the R substituent. The reactions of I with alkynes yield metallacyclopentene complexes with high regioisomer selectivity. Carbonylation of the metallacyclopentene (η-C₅Me₅5)₂TiC(CH₃)=C(CH₃)CH₂ under relatively mild conditions cleanly produces the corresponding cyclopentenone and [C₅(CH₃)₅]₂Ti(CO)₂. Compounds derived from CO₂ and acetaldehyde have also been isolated.

The synthesis and characterization of bis-(η-pentamethylcyclopentadienyl) niobium(III) tetrahydroborate (II) are described and a study of its temperature-dependent proton NMR spectroscopic behavior is reported. The complex is observed to undergo a rapid intramolecular averaging process at elevated temperatures. The free energy of activation, ΔG^≠ = 16.4 ± 0.4 kcal/mol, is calculated. The reinvestigation of a related compound, bis(η-cyclopentadienyl)niobium(III) tetrahydroborate, established ΔG^≠ = 14.6 ± 0.2 kcal/mol for the hydrogen exchange process. The tetrahydroborate complex, II reacts with pyridine and dihydrogen to yield (η-C₅Me₅5)₂NbH₃ (III). The reactivity of III with CO and ethylene is reported.

Low-noise THz Niobium SIS Mixers

This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits.

To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency.

A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/k_b to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.