Linear and nonlinear pathways of spectral information transmission in the cochlear nucleus

At the level of the cochlear nucleus (CN), the auditory pathway divides into several parallel circuits, each of which provides a different representation of the acoustic signal. Here, the representation of the power spectrum of an acoustic signal is analyzed for two CN principal cells—chopper neurons of the ventral CN and type IV neurons of the dorsal CN. The analysis is based on a weighting function model that relates the discharge rate of a neuron to first- and second-order transformations of the power spectrum. In chopper neurons, the transformation of spectral level into rate is a linear (i.e., first-order) or nearly linear function. This transformation is a predominantly excitatory process involving multiple frequency components, centered in a narrow frequency range about best frequency, that usually are processed independently of each other. In contrast, type IV neurons encode spectral information linearly only near threshold. At higher stimulus levels, these neurons are strongly inhibited by spectral notches, a behavior that cannot be explained by level transformations of first- or second-order. Type IV weighting functions reveal complex excitatory and inhibitory interactions that involve frequency components spanning a wider range than that seen in choppers. These findings suggest that chopper and type IV neurons form parallel pathways of spectral information transmission that are governed by two different mechanisms. Although choppers use a predominantly linear mechanism to transmit tonotopic representations of spectra, type IV neurons use highly nonlinear processes to signal the presence of wide-band spectral features.

Olfactory transduction is intrinsically noisy.

The sources of noise that limit olfactory signal detection were investigated in dissociated rat olfactory receptor cells. Near-threshold odorant-evoked currents exhibited large random fluctuation. However, similar fluctuations were observed in the absence of applied odorants when currents were induced by elevating the intracellular cyclic AMP concentration. This suggests that the fluctuations reflect noise intrinsic to the transduction mechanism, rather than the quantal nature of an odorant stimulus. For many odorants, this intrinsic noise may preclude the reliable detection of single odorant molecules.

Critical fluctuations and entanglement in the nondegenerate parametric oscillator

We present a fully quantum mechanical treatment of the nondegenerate optical parametric oscillator both below and near threshold. This is a nonequilibrium quantum system with a critical point phase transition, that is also known to exhibit strong yet easily observed squeezing and quantum entanglement. Our treatment makes use of the positive P representation and goes beyond the usual linearized theory. We compare our analytical results with numerical simulations and find excellent agreement. We also carry out a detailed comparison of our results with those obtained from stochastic electrodynamics, a theory obtained by truncating the equation of motion for the Wigner function, with a view to locating regions of agreement and disagreement between the two. We calculate commonly used measures of quantum behavior including entanglement, squeezing, and Einstein-Podolsky-Rosen (EPR) correlations as well as higher order tripartite correlations, and show how these are modified as the critical point is approached. These results are compared with those obtained using two degenerate parametric oscillators, and we find that in the near-critical region the nondegenerate oscillator has stronger EPR correlations. In general, the critical fluctuations represent an ultimate limit to the possible entanglement that can be achieved in a nondegenerate parametric oscillator.

Intrinsic thresholds in polycrystalline Udimet 720

The long crack threshold behaviour of polycrystalline Udimet 720 has been investigated. Faceted crack growth is seen near threshold when the monotonic crack tip plastic zone is contained within the coarsest grain size. At very high load ratios R (=P min/P max) it is possiblefor the monotonic crack tip plastic zone to exceed the coarsest grain size throughout the entire crack growth regime and non1aceted structure insensitive crack growth is then seen down to threshold. Intrinsic threshold values were obtained for non1aceted and faceted crack growth using a constant K max, increasing K min, computer controlled load shedding technique (K is stress intensity factor). Very high R values are obtained at threshold using this technique (0.75-0.95), eliminating closure effects, so the intrinsic resistance of the material to crack propagation is reflected in these values. The intrinsic non1aceted threshold value ΔK th is lower (2.3 MN m -3/2) than the intrinsicfaceted ΔK th value (4.8 MN m -3/2). This is thought to reflect not only the effect of crack branching and deflection (in the faceted case) on the crack driving force, but also the inherent difference in resistance of the material to the two different crack propagation micromechanisms. © 1993 The Institute of Materials.

Fatigue crack propagation in nickel-base superalloys:effects of microstructure, load ratio, and temperature

The current state of knowledge and understanding of the long fatigue crack propagation behavior of nickel-base superalloys are reviewed, with particular emphasis on turbine disk materials. The data are presented in the form of crack growth rate versus stress intensity factor range curves, and the effects of such variables as microstructure, load ratio, and temperature in the near-threshold and Paris regimes of the curves, are discussed.

Crystallographic fatigue crack growth in nimonic AP1

Recently a controversy has developed over whether crystallographic crack growth near threshold in nickel-base superalloys occurs along right brace 111 left brace slip planes or right brace 100 left brace planes at room temperature. In this work crack propagation is shown to occur on both right brace 100 left brace and right brace 111 left brace planes. The most common facet plane is right brace 111 left brace and this is the only orientation observed at the lowest stress intensities, but at higher stress intensities occasional right brace 100 left brace facets are also produced. This behavior is compared with similar results in aluminum alloys.

Weak strangeness changing semi-leptonic process

We have obtained total and differential cross sections for the strangeness changing charged current weak reaction ν L + p → Λ(Σ0) + L+ using standard dipole form factors, where L stands for an electron, muon, or tau lepton, and L + stands for an positron, anti-muon or anti-tau lepton. We calculated these reactions from near threshold few hundred MeV to 8 GeV of incoming neutrino energy and obtained the contributions of the various form factors to the total and differential cross sections. We did this in support of possible experiments which might be carried out by the MINERνA collaboration at Fermilab. The calculation is phenomenologically based and makes use of SU(3) relations to obtain the standard vector current form factors and data from Λ beta decay to obtain the axial current form factor. We also made estimates for the contributions of the pseudoscalar form factor and for the F E and FS form factors to the total and differential cross sections. We discuss our results and consider under what circumstances we might extract the various form factors. In particular we wish to test the SU(3) assumptions made in determining all the form factors over a range of q2 values. Recently new form factors were obtained from recoil proton measurements in electron-proton electromagnetic scattering at Jefferson Lab. We thus calculated the contributions of the individual form factors to the total and differential cross sections for this new set of form factors. We found that the differential and total cross sections for Λ production change only slightly between the two sets of form factors but that the differential and total cross sections change substantially for Σ 0 production. We discuss the possibility of distinguishing between the two cases for the experiments planned by the MINERνA Collaboration. We also undertook the calculation for the inverse reaction e − + p → Λ + νe for a polarized outgoing Λ which might be performed at Jefferson Lab, and provided additional analysis of the contributions of the individual form factors to the differential cross sections for this case. ^

Thermal anomalies in ternary Ge42-xPbxSe58 glasses near the charge carrier reversal threshold

The carrier type reversal (CTR) from p- to n-type in semiconducting chalcogenide glasses is an important and a long standing problem in glass science. Ge-Se glasses exhibit CTR when the metallic elements Bi and Pb are added. For example, bulk Ge42-xSe58Pbx glasses exhibit CTR around 8-9 at. % of Pb. These glasses have been prepared by melt quenching method. Glass transition temperature (T-g), Specific heat change between the liquid and the glassy states (Delta C-p) at T-g and the nonreversing heat flow (Delta H-nr) measured by modulated differential scanning calorimetry exhibit anomalies at 9 at. % of Pb. These observed anomalies are interpreted on the basis of the nano scale phase separation occurring in these glasses.

Unusual metallic-like transport near the percolation threshold

In multiwall carbon nanotube (MWNT)-polystyrene (PS) composites, a weak temperature dependence of conductivity has been observed at a percolation threshold of 0.4 wt %. The power law [sigma(T)proportional to T-0.3] behavior indicates metallic-like behavior, unlike the usual activated transport for systems near the percolation threshold. The low field positive magnetoconductance follows H-2 dependence, due to the weak localization in disordered metallic systems. The marginal metallic nature of MWNT-PS at percolation threshold is further verified from the negligible frequency dependence of conductivity, in the temperature range of 300 to 5 K. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3455895]

Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation

The effects of hydrogen dilution, subtle boron compensation, and light-soaking on the gap states of hydrogenated amorphous silicon films (a-Si:H) near and above the threshold of microcrystallinity have been investigated in detail by the constant photocurrent method and the improved phase-shift analysis of modulated photocurrent technique. It is shown that high hydrogen dilution near the threshold of microcrystallinity leads to a more ordered network structure and to the redistribution of gap states; it gives rise to a small peak at about 0.55 eV and a shoulder at about 1.2 eV below the conduction band edge, which are associated with the formation of microcrystallites embedded in the amorphous silicon host matrix. A concurrent subtle boron compensation is demonstrated to prevent excessive formation of microcrystallinity, and to help promote the growth of the ordered regions and reduce the density of gap defect states, particularly those associated with microcrystallites. Hydrogen-diluted and appropriately boron-compensated a-Si:H films deposited near the threshold of microcrystallinity show the lowest density of the defects in both the annealed and light-soaked states, and hence, the highest performance and stability. (C) 2001 American Institute of Physics.

Photoionization of Kr near 4s threshold: II. Intermediate-coupling theory

The Kr 4s-electron photoionization cross section as a function of the exciting-photon energy in the range between 30 eV and 90 eV was calculated using the configuration interaction (CI) technique in intermediate coupling. In the calculations the 4p spin-orbital interaction and corrections due to higher orders of perturbation theory (the so-called Coulomb interaction correlational decrease) were considered. Energies of Kr II states were calculated and agree with spectroscopic data within less than 10 meV. For some of the Kr II states new assignments were suggested on the basis of the largest component among the calculated CI wavefunctions.

Photoionization of Kr near the 4s threshold: IV. Photoionization through the autoionization of doubly-excited states

The photoionization cross sections for the production of the Kr II 4s state and Kr II satellite states were studied in the 4s ionization threshold region. The interference of direct photoionization and ionization through the autoionization decay of doubly-excited states was considered. In the calculations of doubly-excited state energies, performed by a configuration interaction technique, the 4p spin-orbit interaction and the (Kr II core)-(excited electron) Coulomb interaction were included. The theoretical cross sections are in many cases in good agreement with the measured values. Strong resonant features in the satellite spectra with threshold energies greater than 30 eV are predicted.

Photoionization of Kr near the 4s threshold: I. Experiment and LS coupling theory

Absolute cross sections for the transitions of the Kr atom into the 4s^1 and 4p^4nl states of the Kr^+ ion were measured in the 4s-electron threshold region by photon-induced fluorescence spectroscopy (PIFS). The cross sections for the transitions of the Kr atom into the 4s^1 and 4p^4nl states were also calculated, as well as the 4p^4nln'l' doubly excited states, in the frame of LS-coupling many-body technique. The cross sections of the doubly-excited atomic states were used to illustrate the pronounced contributions of the latter to the photoionization process, evident from the measurements. The comparison of theory and experiment led to conclusions about the origin of the main features observed in the experiment.

Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions