WO3 and ZnO-doped SnO2 ceramics as insulating material

SnO2 ceramics doped with ZnO and WO3 were prepared by mixed oxide method. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation of SnZnWO8 and ZnWO6 at the grain boundaries without strong influence on the densification process. The electrical characterization (log E x log J) shows that the ternary system SnO2-ZnO-WO3 exhibits a very high resistivity of around 10(14) Omega M. Independently of the WO3 concentration, the electrical conductivity of the Sn02-ZnO-WO3 system is always lower than that of the undoped tin dioxide. (C) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

A theoretical analysis of the TiO2/Sn doped (110) surface properties

We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO2/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO2 is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sri, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices. (c) 2005 Elsevier B.V. All rights reserved.

Structural and microstructural behaviour of SnO2 dense ceramics doped with ZnO and WO3

SnO2-based varistors doped with ZnO and WO3 were prepared by mixed oxide method. Experimental evidence shows that the increase in ZnO amount increases the volume and microstrain of unit cell while the WO3 promotes a decrease. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation in the grain boundary without influence in the densification of the samples. Besides that, an increase in the electrical resistance of the SnO2-ZnO-WO3 system was observed independent of the WO3 concentration. (c) 2005 Elsevier B.V. All rights reserved.

Electrical measurements in doped zirconia-ceria ceramics

Zirconia-ceria powders with 12 mol % of CeO2 doped with 0.3 mol% of iron, copper, manganese and nickel oxides were synthesized by the conventional mixed oxide method. These systems were investigated with regard to the sinterability and electrical properties. Sintering was studied considering the shrinkage rate, densification, grain size, and phase evolution. Small amount of dopant such as iron reduces sintering temperature by over 150degreesC and more than 98% of tetragonal phase was retained at room temperature in samples sintered at 1450degreesC against 1600degreesC to stabilize the tetragonal phase on pure ZrO2-CeO2 system. The electrical conductivity was measured using impedance spectroscopy and the results were reported. The activation energy values calculated from the Arrhenius's plots in the temperature range of 350-700degreesC for intragrain conductivities are 1.04 eV.

Investigation of electrical properties of tantalum doped SnO2 varistor system

Ta2O5 doped SnO2 varistor systems containing 0.5 mol% ZnO and 0.5 mol% Coo were prepared by mixed oxide method. Considering that ZnO and Coo oxides are densification additives only the SnO(2)center dot ZnO center dot CoO ceramics cannot exhibit electrical nonlinearity. A small amount of Ta2O5 improves the nonlinear properties of the samples greatly. The height and width of the defect barriers were calculated. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1100 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. A grain-boundary defect barrier model for the SnO(2)center dot ZnO center dot CoO center dot Ta2O5 varistor system was also introduced. (c) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Temperature dependence on the electrical properties of Ba(Ti0.90Zr0.10)O-3:2V ceramics

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

From tin oxalate to (Fe, Co, Nb)-doped SnO(2): Sintering behavior, microstructural and electrical features

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Preparation and properties as positive electrodes of PANI-LiNi0.8Co0.2O2 nanocomposites

PANI-LiNi0.8Co0.2O2 nanocomposite material with improved properties as positive electrode was prepared by a new synthesis method. In a first step, LiNi0.8Co0.2O2 mixed oxide in the form of a fine powder was dispersed in aniline and this suspension was sprayed on the surface of an aqueous solution of HCl and ammonium peroxodisulfate. The resulting PANI-LiNi0.8Co0.2O2 nanocomposite is spontaneously formed by polymerization of the aniline molecules present in the drops together with small particles of the oxide. This method induces the formation of nanocomposites showing a better distribution of the oxide particles in the polymer matrix than that observed in related PANI-LiNi0.8Co0.2O2 microcomposites prepared under ultrasound irradiation to disperse the oxide particles during PANI polymerization. Measurements of electrical conductivity and zeta potential, as well as structural characterization of PANI-LiNi0.8Co0.2O2 nanocomposites, reveal the existence of relatively strong interactions between the conducting polymer and the oxide particles. This feature determines higher values of the electrical conductivity (0.5 S cm(-1)) and of the average operative voltage (3.6 V), as well as of other technological parameters of the nanocomposite when it is used as the positive electrode of rechargeable lithium batteries, in comparison to those of the related microcomposite materials already reported.

Observation of piezoelectric response on tungsten doped barium zirconium titanate ceramics

This study describes observation of piezoelectric response of Ba(Zr 0.10Ti 0.90.O3 ceramics modified with tungsten (BZT:2W) by the mixed oxide method. According to X ray diffraction analysis, the ceramics are free of secondary phases. Transmission electron microscopy (TEM) analyses reveals the absence of segregates in the grain boundaries indicates the high solubility of WO3 in the BZT matrix. The dielectric permittivity measured at a frequency of 10 KHz was equal to 6500 with dieletric loss of 0.15. A typical hysteresis loop was observed at room temperature. Electron Paramagnetic Resonance (EPR) analyses reveals that substitution of W6+ by Ti4+ causes distortion in the crystal structure changing lattice parameter. Polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning. Piezoelectric force microscopy images reveals that in-plane response may not change its sign upon polarization switching, while the out-of-plane response does. Copyright © 2010 American Scientific Publishers.

Microscopic and dielectric analyses of vanadium and tungsten modified barium zirconium titanate ceramics

Dielectric spectroscopy was used in this study to examine polycrystalline vanadium and tungstendoped BaZr 0.1Ti 0.90O 3 (BZT10:2V and BZT10:2W) ceramics obtained by the mixed oxide method. According to X-ray diffraction analyses, addition of vanadium and tungsten lead to ceramics free of secondary phases. SEM analyses reveal that both dopants result in slower oxygen ion motion and consequently lower grain growth rate. Temperature dependence dielectric study showed normal ferroelectric to paraelectric transition well above the room temperature for the BZT10 and BZT10:2V ceramics. However, BZT10:2W ceramic showed a relaxor-like behavior near phase transition characterized by the empirical parameter γ. Piezoelectric force microscopy images reveals that the piezoelectric coefficient is strongly influenced by type of donor dopant suggesting promising applications for dynamic random access memories and data-storage media. Copyright © 2010 American Scientific Publishers All rights reserved.

Effect of oxidizing and reducing atmospheres on Ba(Ti0.90 Zr0.10)O3:2V ceramics as characterized by piezoresponse force microscopy

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Adsorção-fotodegradação do herbicida paraquate em água pela argila Na-Bentonita e por novos materiais TiO2-Bentonita, TiO2/ZnOBentonita, Al/Fe-Bentonita e Al/Fe.Cu-Bentonita

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Synthesis and optical property of MgMoO4 crystals

In this work, we report on the synthesis of MgMoO4 crystals by oxide mixed method. The powder was calcined at 1100 degrees C for 4h and analyzed by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Field emission gun scanning electron microscopy (FEG-SEM), Ultraviolet-visible (UV-vis) absorption spectroscopy and Photoluminescence (PL) measurement. XRD analyses revealed that the MgMoO4 powders crystallize in a monoclinic structure and are free secondary phases. UV-vis technique was employed to determine the optical band gap of this material. MgMoO4 crystals exhibit an intense PL emission at room temperature with maximum peak at 579 nm (yellow region) when excited by 350 nm wavelength at room temperature.

Materiais derivados de hidróxidos duplos lamelares: síntese, caracterização e aplicação em adsorção e processos avançados de oxidação

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influência de elementos terras raras nas propriedades catalíticas de óxidos derivados de hidrotalcitas para produção de biodiesel etílico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)