Transport Phenomena in Ammonothermal Growth of Gallium Nitride

GaN can be used to fabricate blue/green/UV LEDs and high temperature, high power electronic devices. Ideal substrates are needed for high quality III-nitride epitaxy, which is an essential step for the manufacture of LEDs. GaN substrates are ideal to be lattice matched and isomorphic to nitride-based films. Bulk single crystals of GaN can be grown from supercritical fluids using the ammonothermal method, which utilizes ammonia as fluid rather than water as in the hydrothermal process. In this process, a mineralizer such as amide, imide or azide is used to attack a bulk nitride feedstock at temperatures from 200 - 500癈 and pressures from 1 - 4 kbar. Baffle design is essential for successful growth of GaN crystals. Baffle is used to separate the dissolving zone from the growth zone, and to maintain a temperature difference between the two zones. For solubility curve with a positive coefficient with respect to temperature, the growth zone is maintained at a lower temperature than that in the dissolving zone, thus the nutrient becomes supersaturated in the growth zone. The baffle opening is used to control the mixing of nutrients in the two zones, thus the transfer of nutrient from the lower part to the upper part. Ammonothermal systems have been modeled here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. We investigated the effects of baffle opening and position on the transport phenomena of nutrient from dissolving zone to the growth zone. Simulation data have been compared qualitatively with experimental data.

The effects of disorder in dimerized quantum magnets in mean field approximations

15 p.

Investigations of noise and of quantum interference in proximity effect bridges

This work reports investigations upon weakly superconducting proximity effect bridges. These bridges, which exhibit the Josephson effects, are produced by bisecting a superconductor with a short (<1µ) region of material whose superconducting transition temperature is below that of the adjacent superconductors. These bridges are fabricated from layered refractory metal thin films whose transition temperature will depend upon the thickness ratio of the materials involved. The thickness ratio is changed in the area of the bridge to lower its transition temperature. This is done through novel photolithographic techniques described in the text, Chapter 2.

If two such proximity effect bridges are connected in parallel, they form a quantum interferometer. The maximum zero voltage current through this circuit is periodically modulated by the magnetic flux through the circuit. At a constant bias current, the modulation of the critical current produces a modulation in the dc voltage across the bridge. This change in dc voltage has been found to be the result of a change in the internal dissipation in the device. A simple model using lumped circuit theory and treating the bridges as quantum oscillators of frequency ω = 2eV/h, where V is the time average voltage across the device, has been found to adequately describe the observed voltage modulation.

The quantum interferometers have been converted to a galvanometer through the inclusion of an integral thin film current path which couples magnetic flux through the interferometer. Thus a change in signal current produces a change in the voltage across the interferometer at a constant bias current. This work is described in Chapter 3 of the text.

The sensitivity of any device incorporating proximity effect bridges will ultimately be determined by the fluctuations in their electrical parameters. He have measured the spectral power density of the voltage fluctuations in proximity effect bridges using a room temperature electronics and a liquid helium temperature transformer to match the very low (~ 0.1 Ω) impedances characteristic of these devices.

We find the voltage noise to agree quite well with that predicted by phonon noise in the normal conduction through the bridge plus a contribution from the superconducting pair current through the bridge which is proportional to the ratios of this current to the time average voltage across the bridge. The total voltage fluctuations are given by <V^2(f ) > = 4kTR^2_d I/V where R_d is the dynamic resistance, I the total current, and V the voltage across the bridge . An additional noise source appears with a strong 1/f^(n) dependence , 1.5 < n < 2, if the bridges are fabricated upon a glass substrate. This excess noise, attributed to thermodynamic temperature fluctuations in the volume of the bridge, increases dramatically on a glass substrate due to the greatly diminished thermal diffusivity of the glass as compared to sapphire.

Scalable Methods for Deterministic Integration of Quantum Emitters in Photonic Crystal Cavities

We investigated four unique methods for achieving scalable, deterministic integration of quantum emitters into ultra-high Q{V photonic crystal cavities, including selective area heteroepitaxy, engineered photoemission from silicon nanostructures, wafer bonding and dimensional reduction of III-V quantum wells, and cavity-enhanced optical trapping. In these areas, we were able to demonstrate site-selective heteroepitaxy, size-tunable photoluminescence from silicon nanostructures, Purcell modification of QW emission spectra, and limits of cavity-enhanced optical trapping designs which exceed any reports in the literature and suggest the feasibility of capturing- and detecting nanostructures with dimensions below 10 nm. In addition to process scalability and the requirement for achieving accurate spectral- and spatial overlap between the emitter and cavity, these techniques paid specific attention to the ability to separate the cavity and emitter material systems in order to allow optimal selection of these independently, and eventually enable monolithic integration with other photonic and electronic circuitry.

We also developed an analytic photonic crystal design process yielding optimized cavity tapers with minimal computational effort, and reported on a general cavity modification which exhibits improved fabrication tolerance by relying exclusively on positional- rather than dimensional tapering. We compared several experimental coupling techniques for device characterization. Significant efforts were devoted to optimizing cavity fabrication, including the use of atomic layer deposition to improve surface quality, exploration into factors affecting the design fracturing, and automated analysis of SEM images. Using optimized fabrication procedures, we experimentally demonstrated 1D photonic crystal nanobeam cavities exhibiting the highest Q/V reported on substrate. Finally, we analyzed the bistable behavior of the devices to quantify the nonlinear optical response of our cavities.

Mössbauer effect investigations of the hyperfine interactions and relaxation phenomena in salts of thulium

Two new phenomena have been observed in Mössbauer spectra: a temperature-dependent shift of the center of gravity of the spectrum, and an asymmetric broadening of the spectrum peaks. Both phenomena were observed in thulium salts. In the temperature range 1˚K ≤ T ≤ 5˚K the observed shift has an approximate inverse temperature dependence. We explain this on the basis of a Van Vleck type of interaction between the magnetic moment of two nearly degenerate electronic levels and the magnetic moment of the nucleus. From the size of the shift we are able to deduce an “effective magnetic field” H = (6.0 ± 0.1) x 10⁶ Gauss, which is proportional to ‹r^-3›_M‹G|J|E› where ‹r^-3›_M is an effective magnetic radial integral for the 4f electrons and |G› and |E› are the lowest 4f electronic states in Tm Cl₃·6H₂O. From the temperature dependence of the shift we have derived a preliminary value of 1 cm^-1 for the splitting of these two states. The observed asymmetric line broadening is independent of temperature in the range 1˚K ≤ T ≤ 5˚K, but is dependent on the concentration of thulium ions in the crystal. We explain this broadening on the basis of spin-spin interactions between thulium ions. From size and concentration dependence of the broadening we are able to deduce a spin-spin relaxation time for Tm Cl₃·6H₂O of the order of 10^-11 sec.

Experimental investigation of quench phenomena in YBCO thin films for SFCL applications

Superconducting Fault Current Limiters (SFCLs) are regarded as key components for modern power systems. The progress in the development of YBCO thin films opens new perspectives in the design of these devices. In this paper, the quenching phenomenon in YBCO thin films is investigated experimentally, in order to gain the proper technical know-how suitable for the design of resistive type SFCLs. In particular, the origin of the quenching, as well as the propagation dynamics within a YBCO tape, is investigated for different input current waveforms. The role of a parallel-connected protective resistance on the quench dynamic is also studied. © 2009 IEEE.

Nonlinear phenomena in thermoacoustics: A comparison between single-mode and multi-mode methods

Nonlinear analysis of thermoacoustic instability is essential for prediction of frequencies and amplitudes of limit cycles. In frequency domain analyses, a quasi-linear transfer function between acoustic velocity and heat release rate perturbations, called the flame describing function (FDF), is obtained from a flame model or experiments. The FDF is a function of the frequency and amplitude of velocity perturbations but only contains the heat release response at the forcing frequency. While the gain and phase of the FDF provide insight into the nonlinear dynamics of the system, the accuracy of its predictions remains to be verified for different types of nonlinearity. In time domain analyses, the governing equations of the fully coupled problem are solved to find the time evolution of the system. One method is to discretize the governing equations using a suitable basis, such as the natural acoustic modes of the system. The number of modes used in the discretization alters the accuracy of the solution. In our previous work we have shown that predictions using the FDF are almost exactly the same as those obtained from the time-domain using only one mode for the discretization. We call this the single-mode method. In this paper we compare results from the single-mode and multi-mode methods, applied to a thermoacoustic system of a premixed flame in a tube. For some cases, the results differ greatly in both amplitude as well as frequency content. This study shows that the contribution from higher and subharmonics to the nonlinear dynamics can be significant and must be considered for an accurate and comprehensive analysis of thermoacoustic systems. Hence multi-mode simulations are necessary, and the single-mode method or the FDF may be insufficient to capture some of the complex nonlinear behaviour in fhermoacoustics.

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

Spin-dependent current noises in transport through coupled quantum dots

Current fluctuations can provide additional insight into quantum transport in mesoscopic systems. The present work is carried out for the fluctuation properties of transport through a pair of coupled quantum dots which are connected with ferromagnetic electrodes. Based on an efficient particle-number-resolved master equation approach, we are concerned with not only fluctuations of the total charge and spin currents, but also of each individual spin-dependent component. As a result of competition among the spin polarization, Coulomb interaction, and dot-dot tunnel coupling, rich behaviors are found for the self- and mutual-correlation functions of the spin-dependent currents.

Quantum master-equation approach to quantum transport through mesoscopic systems

For quantum transport through mesoscopic systems, a quantum master-equation approach is developed in terms of compact expressions for the transport current and the reduced density matrix of the system. The present work is an extension of Gurvitz's approach for quantum transport and quantum measurement, namely, to finite temperature and arbitrary bias voltage. Our derivation starts from a second-order cumulant expansion of the tunneling Hamiltonian; then follows the conditional average over the electrode reservoir states. As a consequence, in the usual weak-tunneling regime, the established formalism is applicable for a wide range of transport problems. The validity of the formalism and its convenience in application are well illustrated by a number of examples.

Transport properties through quantum dot in a vertical electric field

The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.

Lasing of CdSSe quantum dots in glass spherical microcavity

Glass spherical microcavities containing CdSSe semiconductor quantum dots (QDs) of a few microns in diameter are fabricated using a physical method. When a single glass microspherical cavity is excited by a laser beam at room temperature, very strong and sharp whispering gallery modes are shown on the background of PL spectra of CdSSe QDs, which confirms that coupling between the optical emission of embedded QDs and spherical cavity modes is realized. For a glass microsphere only 4.6 mum in diameter, it was found that the energy separation is nearly up to 26 nm both for TE and TM modes. With the increasing excitation intensity, the excitation intensity dependence of the emission intensity is not linear in the double-logarithmic scale. Above the threshold value, the linewidths of resonance modes become narrower. The lasing behavior is achieved at relatively low excitation intensity at room temperature. High optical stability and low threshold value make this optical system promising in visible microlaser applications. (C) 2002 Elsevier Science B.V. All rights reserved.

Lasing of CdSexS1-x quantum dots in a glass spherical microcavity

A glass spherical microcavity only a few microns in diameter embedded with CdSexS1-x quantum dots (QDs) was fabricated using a physical method; it exhibited good optical stability under continuous-wave laser excitation with high power. We investigated the excitation power dependences of the emission intensity and the linewidth of both transverse electric and transverse magnetic resonance peaks of whispering gallery modes. Stimulated emission behaviour of multi-frequency modes is observed at room temperature. The low threshold value and large mode separation makes QD-containing microspheres promising for visible microlaser applications.

Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices

The optical properties of InAs quantum dots in n-i-p-i GaAs superlattices are investigated by photoluminescence (PL) characterization. We have observed an anomalously large blueshift of the PL peak and increase of the PL linewidth with increasing excitation intensity, much smaller PL intensity decrease, and faster PL peak redshift with increasing temperature as compared to conventional InAs quantum dots embedded in intrinsic GaAs barriers. The observed phenomena can all be attributed to the filling effects of the spatially separated photogenerated carriers. (C) 2000 American Institute of Physics. [S0003-6951(00)03515-4].

GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES

We have observed periodic current and capacitance oscillations with increasing bias on doped GaAs/AlAs superlattices at a temperature of 77 K. The maximum of the observed capacitance is larger than usual geometric capacitances in superlattices, being comparable to the quantum capacitance of the two-dimensional (2D) electron system proposed by Luryi. A model based on well-to-well sequential resonant tunneling due to the movement of the boundary between the electric field domains in superlattice was proposed to explain the origin of the giant capacitance oscillations. It was demonstrated that the capacitance at the peaks of capacitance-voltage (C-V) characteristics reflects the quantum capacitance of the space-charge region at the boundary between the domains (a novel 2D electron system).