Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

An experimental study for wave-induced instability of pipelines: the breakout of pipelines

In this paper, a series of experiments have been conducted in a U-shaped oscillatory flow tunnel, which provides a more realistic simulation than the previous actuator loading methods. Based on the experimental data of pipe displacement with two different constraint conditions (freely laid pipelines and anti-rolling pipelines), three characteristic times in the process of pipeline losing stability are identified. The effects of sand size on the pipeline lateral stability are examined for freely laid pipelines. The empirical relationships between non-dimensional pipeline weight (G) and Fronde number (Fr-b) are established for different constraint conditions, which will provide a guide for engineering practice. (C) 2002 Elsevier Science Ltd. All rights reserved.

Supernovae explosions induced by pair production instability

Stars with a core mass greater than about 30 M_⊙ become dynamically unstable due to electron-positron pair production when their central temperature reaches 1.5-2.0 x 10^{9 0}K. The collapse and subsequent explosion of stars with core masses of 45, 52, and 60 M_⊙ is calculated. The range of the final velocity of expansion (3,400 – 8,500 km/sec) and of the mass ejected (1 – 40 M_⊙) is comparable to that observed for type II supernovae.

An implicit scheme of hydrodynamic difference equations (stable for large time steps) used for the calculation of the evolution is described.

For fast evolution the turbulence caused by convective instability does not produce the zero entropy gradient and perfect mixing found for slower evolution. A dynamical model of the convection is derived from the equations of motion and then incorporated into the difference equations.

CALCULATIONS OF INLET DISTORTION INDUCED COMPRESSOR FLOWFIELD INSTABILITY.

Calculations are presented predicting the onset of flow instability for a multistage low speed axial compressor operating in circumferentially distorted inlet flow. The most important feature of the model used is that it attempts to properly account for the fluid dynamic interaction between the spoiled and unspoiled sectors of the compressor. The calculations show that there is an approximate stability criterion, the annulus averaged slope of the compressor pressure rise characteristic equal to zero, that is valid whenever the dynamics of the compressor distorted flowfield can be considered independent of the compressor environment. This approximate criterion is used to investigate the relationship between the present model and the 'parallel compressor' model. Further calculations are performed to investigate cases of interest when the dynamics of the compressor flowfield are coupled to the environment. Resonant cases and cases when the distortion is unsteady are studied.

Modelling of liquefaction-induced instability in pile

Centrifuge testing has been undertaken to investigate instability failure of pile groups during seismic liquefaction, with specific reference to the 'top-down' propagation of liquefaction during the earthquake and to account for initial imperfections in pile geometry. The results of these tests were used to validate numerical models within the finite element program ABAQUS, based on the popular p-y analysis method. Pseudostatic classical and post-buckling analyses were conducted to examine the collapse behaviour of the pile groups and were found to give reasonable predictions of collapse load and conservative predictions of the associated deflection conditions. This numerical model was compared to currently published methods which were found to over-predict collapse loads. The resulting insights into the collapse of axially loaded pile groups revealed that the failure load is strongly dependent on both the depth of liquefaction propagation and initial imperfections, which reduce the collapse load.

Light-bias induced instability and persistent photoconductivity in In-Zn-O/Ga-In-Zn-O thin film transistors

Stress/recovery measurements demonstrate that even high-performance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias.

On the stability of a rod adhering to a rigid surface: Shear-induced stable adhesion and the instability of peeling

Using variational methods, we establish conditions for the nonlinear stability of adhesive states between an elastica and a rigid halfspace. The treatment produces coupled criteria for adhesion and buckling instabilities by exploiting classical techniques from Legendre and Jacobi. Three examples that arise in a broad range of engineered systems, from microelectronics to biologically inspired fiber array adhesion, are used to illuminate the stability criteria. The first example illustrates buckling instabilities in adhered rods, while the second shows the instability of a peeling process and the third illustrates the stability of a shear-induced adhesion. The latter examples can also be used to explain how microfiber array adhesives can be activated by shearing and deactivated by peeling. The nonlinear stability criteria developed in this paper are also compared to other treatments. © 2012 Elsevier Ltd. All rights reserved.

P-16: Light-bias induced instability and persistent photoconductivity in in-zn-o/ga-in-zn-o thin film transistors

Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias. © 2011 SID.

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation. © 2014 AIP Publishing LLC.