Impulse-voltage breakdown characteristics of large gaps at low pressures

A study of the gap breakdown voltage characteristic at a low pressure of 7×10-5 Torr with a standard (1/50)-μsec impulse-voltage wave reveals an agreement with the criterion Vb=Cd0.5 suggested by Cranberg. Voltage-time-to-breakdown characteristics has also been determined. From these studies, it is concluded that impulse breakdown in vacuum is initiated by an electron current heating an anode spot and thereby liberating a clump which causes breakdown.

An Experimental Study to Show the Effect of Thermal Stress on Thermal Contact Conductance at Sub-megapascal Contact Pressures

Experimental studies are presented to show the effect of thermal stresses on thermal contact conductance (TCC) at low contact pressures. It is observed that in a closed contact assembly, contact pressure acting on the interface changes with the changing temperature of contact members. This change in contact pressure consequently causes variations in the TCC of the junction. A relationship between temperature change and the corresponding magnitude of developed thermal stress in a contact assembly is determined experimentally. Inclusion of a term called temperature dependent load correction factor is suggested in the theoretical model for TCC to make it capable of predicting TCC values more accurately in contact assemblies that experience large temperature fluctuations. [DOI: 10.1115/1.4001615]

The vapour pressures of barium and strontium

The vapour pressures of barium and strontium have been measured by continuous monitoring of the weight loss of Knudsen cells in the temperature range 700�1200 K. The results for strontium agree with those reported in the literature, but the vapour pressure of barium has been found to be considerably lower than the generally accepted value. The experimentally determined pressures are in good agreement with theoretical values obtained using the Gibbs-Bogoliubov first-order variational method.

Thermal gap conductance at low contact pressures (<1 MPa): Effect of gold plating and plating thickness

Thermal contact conductance (TCC) measurements are made on bare and gold plated (<= 0.5 mu m) oxygen free high conductivity (OFHC) Cu and brass contacts in vacuum, nitrogen, and argon environments. It is observed that the TCC in gaseous environment is significantly higher than that in vacuum due to the enhanced thermal gap conductance. It is found that for a given contact load and gas pressure, the thermal gap conductance for bare OFHC Cu contacts is higher than that for gold plated contacts. It is due to the difference in the molecular weights of copper and gold, which influences the exchange of kinetic energy between the gas molecules and contact surfaces. Furthermore, the gap conductance is found to increase with increasing thickness of gold plating. Topography measurements and scanning electron microscopy (SEM) analysis of contact surfaces revealed that surfaces become smoother with increasing gold plating thickness, thus resulting in smaller gaps and consequently higher gap conductance. (C) 2010 Elsevier Ltd. All rights reserved.

Effect of High Pressure on the Electrical Conductivity of TlInX2 (X = Se, Te) Layered Semiconductors

The dc electrical conductivity of TlInX2 (X = Se, Te) single crystals, parallel and perpendicular to the (001) c-axis is studied under high quasi-hydrostatic pressure up to 7.0 GPa, at room temperature. Conductivity measurements parallel to the c-axis are carried out at high pressures and down to liquid nitrogen temperatures. These materials show continuous metallization under pressure. Both compounds have almost the same pressure coefficient of the electrical activation energy parallel to the c-axis, d(ΔE∥)/dP = −2.9 × 10−10 eV/Pa, which results from the narrowing of the band gap under pressure. The results are discussed in the light of the band structure of these compounds.

Electrical-Resistivity Studies on GE-SE Glasses at High-Pressures and Low-Temperatures

High pressure electrical resistivity measurements were carried out on GexSe100-x (0 less-than-or-equal-to x less-than-or-equal-to 40) glasses at ambient and low temperatures using the Bridgman anvil system. All the melt quenched glasses show a discontinuous glassy semiconductor to crystalline metal transition at high pressures. The high pressure phases of Ge-Se samples do not correspond to any of the equilibrium phases of the system. Additionally, the variation of transition pressure (P(T)), ambient resistivity (rho0) and the activation energy (DELTAE(t)) with composition, exhibit a change in behaviour at x = 20 and 33. The unusual variations observed in these glasses are discussed in the light of chemical and percolation thresholds occurring in the glassy system.

Solubility of sulfur dioxide at low partial pressures in dilute sulfuric acid solutions

Equilibrium of dissolution of sulfur dioxide at ppm levels in aqueous solutions of dilute sulfuric acid is analyzed, and a general expression is derived relating the total concentration of sulfur dioxide in the liquid phase to the partial pressure of SO2 in the gas and to the concentration of sulfuric acid in the solution. The equation is simplified for zero and high concentrations of the acid. Experiments at high concentrations of sulfuric acid have enabled the direct determination of Henry’s constant and its dependency on temperature. Heat of dissolution is -31.47 kJ/mol. Experiments in the absence of sulfuric acid and the related simplified expression have led to the determination of the equilibrium constant of the hydrolysis of aqueous sulfur dioxide and its temperature dependency.The heat of hydrolysis is 15.69 kJ/mol. The model equation with these parameters predicts the experimental data of the present work as well as the reported data very well.

Pressure-induced band gap reduction, orientational ordering and reversible amorphization in single crystals of C70: Photoluminescence and Raman studies

Photoluminescence and Raman scattering experiments have been carried out on single crystals of C70 up to 31 GPa to investigate the effect of pressure on the optical band gap, vibrational modes and stability of the molecule. The photoluminescence band shifts to lower energies and the pressure dependence of the band maxima yields the hydrostatic deformation potential to be 2.15 eV. The slope changes in the pressure dependence of peak positions and linewidths of the Raman modes associated with the intramolecular vibrations at 1 GPa mark the known face-centred cubic-->rhombohedral orientational ordering transition. The reversible amorphization in C70 at P > 20 GPa has been compared with the irreversible amorphization in C60 at P > 22 GPa in terms of carbon-carbon distance between the neighbouring molecules at the threshold transition pressures, in conjunction with the interplay between the intermolecular and intramolecular interactions.

Spray characterization of straight vegetable oils at high injection pressures

We present results of high pressure spray characterization of Straight Vegetable Oils (SVOs) which are potential diesel fuel substitutes. SVO sprays are visualized at high injection pressures (up to 1600 bar) to study their atomization characteristics. Spray structure studies are reported for the first time for Jatropha and Pongamia vegetable oils, under atmospheric conditions. Jatropha and Pongamia SVO sprays are found to be poorly atomized and intact liquid cores are observed even at an injection pressure of 1600 bar. Non-Newtonian behavior of Jatropha and Pongamia oil is shown to be the reason for observed spray structure. (C) 2012 Elsevier Ltd. All rights reserved.