Lanthanum zirconate nanofibers with high sintering-resistance

The PVP/lanthanum nitrate/zirconium oxychloride (PVP-precursor) nanofiber was prepared by electrospinning technique. Lanthanum zirconate (La2Zr2O7, LZ) in the nanofiber is formed after calcination at 800 degrees C and the nanofiber with pyrochlore structure and a diameter of 100-500 nm can be obtained by calcination of the above precursor fiber at 1000 degrees C for 12 h. The surface of the fiber is rough but the continuous microstructure is still maintained after calcination. LZ fibers stack randomly, resulting in a structure with a low contact area between the fibers. This special structure makes the fiber to have a high resistance to sintering at elevated temperatures. The BET (Brunauer-Emmett-Teller) specific surface areas of the LZ fiber and powder calcined at different temperatures are shown in this paper, and the fiber was characterized by TG-DTA (thermal gravimetry-differential thermal analysis), XRD (X-ray diffraction), N-2 absorption-desorption porosimetry and SEM (scanning electron microscopy).

Determination of rare and rare earth elements in soils and sediments by ICP-MS using Ti(OH)(4)-Fe(OH)(3) co-precipitation preconcentration

A method was developed for the determination of trace and ultratrace amounts of REE. Cd. In. Tl. Th. Nb, Ta. Zr and Hf in soils and sediments. With NaOH-Na2O2 as the flux. Ti(OH)(4)-Fe(OH)(3) co-precipitation as the preconcentration technique and inductively coupled plasma mass spectrometry (ICP-MS) for measurement, the whole procedure was concise and suitable for batch analysis of multi-element solutions. An investigation was carried out of the Ti(OH)(4)-Fe(OH)(3) co-precipitation system, and the results obtained showed that the natural situation of Ti tightly coexisting with Nb. Ta, Zr and Hf in geological samples plays a very important role in the complete co-precipitation of the four elements. The accuracy of this procedure was established using six Chinese soil and sediment certified reference materials (GSS and GSD). and the relative errors between the found and certified values were mostly below 10%.

Syntheses and crystal structures of [(C6H5CH2C5H4)(2)GdCl center dot THF](2) and (C6H5CH2C5H4)(2)ErCl center dot THF

[(C6H5CH2C5H4)(2)GdCl . THF](2) (1) and (C6H5CH2C5H4)(2)ErCl . THF (2) were prepared by the reaction of LnCl(3) (Ln=Gd, Er) with benzylcyclopentadienyl sodium in THF and characterized by elemental analysis, IR, H-1 NMR, C-13 NMR, MS and thermal gravimetry. The crystal structures of both compounds were determined. Complex 1 is dimeric and its structure belongs to the monoclinic, P2(1)/c space group with a=1.1432(2), b=1.2978(2), c=1.7604(3) nm, beta=108.75(2), V=2.4732(9) nm(3), Z=2(four monomers), D-c=1.54 g . cm(-3). R=0.0342 and R(w)=0.0362. Complex 2 is monomer and its structure belongs to the orthorhombic, P2(1)2(1)2(1) space group with a=0.8645(2), b=1.1394(3), c=2.5289(4) nm, V=2.4919(9) nm(3), Z=4, D-c=1.56 g . cm(-3). R=0.0514, R(w)=0.0529. The determination of the crystal structure shows that in complex 1 the benzyl groups on the cyclopentadienyls coordinated to Gd3+ are located in the opposite direction (139 degrees); in complex 2 the benzyl groups on the cyclopentadienyls coordinated to Er3+ are located in the same direction (6.5 degrees).

塔里木盆地塔中—巴楚地区早二叠世岩浆岩地球化学特征及其成因

Tazhong-Bachu region is located in the Western Tarim basin.The early Permian magmatic rocks occur in the earth surface of Tazhong-Bachu region are mainly distributed in Kepintag,Mazhartag and Wajilitag region. There are a lot of wells, in which researchers found the early Permian magmatic rocks,in desert cover area.Most magmatic rocks are basic rocks, a few of which are ultrabasic rocks and intermediate-acid magmatic rocks.The ultrabasic rocks are are mainly occur in the Cryptoexplosive Breccia Pipes ,which is located in the volcanic complex body of Wajilitag region.The basic rocks can be divided into three rock types：The first type of the magmatic rocks in Tazhong-Bachu region is volcanic rock ,which occurs in the Lower Permian Kupukuziman Formation and Kaipaizileike Formation. Most Volcanic rocks are basalts,a few of which are volcanic breccias and pyroclastic rocks.The basalts are distributed in stratiform occurrences and interbeded the clastic rocks in Kepintag region.The attitudes of the basalts are nearly horizontal.Columnar Joints, gas pore textures and amygdaloidal structure are to develop in basalts.The second type of the magmatic rocks in Tazhong-Bachu region is diabase,which occurs in Mazhartag region.Diabase dike swarms occur in the stratums of Silurian, Devonian, Carboniferous and Lower Permian.They make from NNW direction to SSE direction, the obliquity of stratum is greater than 60°, and the dike thickness is form several cm to several meters. Diabasic texture is found in the rocks .The first type of the magmatic rocks in Tazhong-Bachu region are gabbro- pyroxenite rocks ,which occur in the Wajilitag igneous complex body. The intermediate-acid magmatic rocks, which are mainly syenites, are located in Mazhartag and Wajiltag region. But they are small in the whole Tazhong-Bachu region.There are intermediate-acid magmatic rocks,which are mainly dacite,in the northeast part of the wells in Tazhong-Bachu region.But ,it is not found in earth surface.Through systematical geochemical research of early Permian magmatic rocks,which are distributed in Kepintag,Mazhartag, Wajilitag region and the wells such as F1 well、Z1 well、Z13 well、TZ18 well、H3 well、H4 well et al., the focus on the geochronologic characteristics, the main element,trace element and REE geochemistry, the mineralogic characteristics, the Sr-Nd and Pb isotopic characteristics are put forward. The main points are: 1、A combined study of CL imaging and LA-ICP-MS U-Pb dating were carried out for zircon grains of the magmatic rocks in the Tazhong-Bachu region from the Tarim basin.The results of the systematic zircon LA-ICP-MS U-Pb dating reveal 272±6Ma to 291±10Ma for the magamatic rocks. It indicated that Early Permian is an important period of magmatic acvivity in the Tazhong-Bachu region. 2、There are a big hunch in the curves of primitive mantle-normalized trace element concentrations in the early Permian magmatic rocks from Kepintag, Mazhartag, Wajilitag region and the 14 wells. Light rare earth elements are comparatively rich and heavy rare earth elements are comparatively poor. The slope rates are same between light rare erath elements and heavy rare earth elements. It is not like the curves of the basalts in the convergent margin of plate , in which the slope rates of light rare erath elements is bigger than the alope rates of heavy rare erath elements, and the curves of heavy rare earth elements are comparatively flat. The magmatic rocks of Tazhong-Bachu region rarely have the characteristics of the basalts in the convergent margin of plate, which is that Tantalum, Niobium and Titanium are much poor, and Zirconium, Hafnium and Phosphorus are moderately poor. The magamatic rocks are mostly alkaline, which is indicated by the dots of the (Na2O+K2O)-SiO2 identification diagram. All of these indicate that the early Permian magmatic rocks were formed in an extension environment of intraplate. 3、The Thorium abundance is high and Tantalum abundance is low in most magmatic rocks from Tazhong-Bachu reguion, which is formed for crustal contamination.In the Th/Yb-Ta/Yb identification diagram，most dots are in the region, which means active continental margin, but a few dots are in the region, which means mantle source. It indicated the feeding of continental crust materials. 4、The magnesium content of the olvines from Wagilitag region is richest, and the olvines from Kepintag region is poorest in the tree region. 5、Through the the Sr-Nd and Pb isotopic study of the basalts and diabases from the F1 well core, Z1 well core, Z13 well core,TZ18 well core, and the basalts，gabbros, diabases(diabase-prophyrites) and pl-peridotites from Kepintag,Mazhartag, Wajilitag region , it indicated that all isotopic data is similar and close to enriched mantle.

Ab initio calculations of group 4 metallocene reaction mechanisms: atomic layer deposition and bond activation catalysis

Thin film dielectrics based on titanium, zirconium or hafnium oxides are being introduced to increase the permittivity of insulating layers in transistors for micro/nanoelectronics and memory devices. Atomic layer deposition (ALD) is the process of choice for fabricating these films, as it allows for high control of composition and thickness in thin, conformal films which can be deposited on substrates with high aspect-ratio features. The success of this method depends crucially on the chemical properties of the precursor molecules. A successful ALD precursor should be volatile, stable in the gas-phase, but reactive on the substrate and growing surface, leading to inert by-products. In recent years, many different ALD precursors for metal oxides have been developed, but many of them suffer from low thermal stability. Much promise is shown by group 4 metal precursors that contain cyclopentadienyl (Cp = C5H5-xRx) ligands. One of the main advantages of Cp precursors is their thermal stability. In this work ab initio calculations were carried out at the level of density functional theory (DFT) on a range of heteroleptic metallocenes [M(Cp)4-n(L)n], M = Hf/Zr/Ti, L = Me and OMe, in order to find mechanistic reasons for their observed behaviour during ALD. Based on optimized monomer structures, reactivity is analyzed with respect to ligand elimination. The order in which different ligands are eliminated during ALD follows their energetics which was in agreement with experimental measurements. Titanocene-derived precursors, TiCp*(OMe)3, do not yield TiO2 films in atomic layer deposition (ALD) with water, while Ti(OMe)4 does. DFT was used to model the ALD reaction sequence and find the reason for the difference in growth behaviour. Both precursors adsorb initially via hydrogen-bonding. The simulations reveal that the Cp* ligand of TiCp*(OMe)3 lowers the Lewis acidity of the Ti centre and prevents its coordination to surface O (densification) during both of the ALD pulses. Blocking this step hindered further ALD reactions and for that reason no ALD growth is observed from TiCp*(OMe)3 and water. The thermal stability in the gas phase of Ti, Zr and Hf precursors that contain cyclopentadienyl ligands was also considered. The reaction that was found using DFT is an intramolecular α-H transfer that produces an alkylidene complex. The analysis shows that thermal stabilities of complexes of the type MCp2(CH3)2 increase down group 4 (M = Ti, Zr and Hf) due to an increase in the HOMO-LUMO band gap of the reactants, which itself increases with the electrophilicity of the metal. The reverse reaction of α-hydrogen abstraction in ZrCp2Me2 is 1,2-addition reaction of a C-H bond to a Zr=C bond. The same mechanism is investigated to determine if it operates for 1,2 addition of the tBu C-H across Hf=N in a corresponding Hf dimer complex. The aim of this work is to understand orbital interactions, how bonds break and how new bonds form, and in what state hydrogen is transferred during the reaction. Calculations reveal two synchronous and concerted electron transfers within a four-membered cyclic transition state in the plane between the cyclopentadienyl rings, one π(M=X)-to-σ(M-C) involving metal d orbitals and the other σ(C-H)-to-σ(X-H) mediating the transfer of neutral H, where X = C or N. The reaction of the hafnium dimer complex with CO that was studied for the purpose of understanding C-H bond activation has another interesting application, namely the cleavage of an N-N bond and resulting N-C bond formation. Analysis of the orbital plots reveals repulsion between the occupied orbitals on CO and the N-N unit where CO approaches along the N-N axis. The repulsions along the N-N axis are minimized by instead forming an asymmetrical intermediate in which CO first coordinates to one Hf and then to N. This breaks the symmetry of the N-N unit and the resultant mixing of MOs allows σ(NN) to be polarized, localizing electrons on the more distant N. This allowed σ(CO) and π(CO) donation to N and back-donation of π*(Hf2N2) to CO. Improved understanding of the chemistry of metal complexes can be gained from atomic-scale modelling and this provides valuable information for the design of new ALD precursors. The information gained from the model decomposition pathway can be additionally used to understand the chemistry of molecules in the ALD process as well as in catalytic systems.

First principles modelling of nucleation and growth during atomic layer deposition onto III-V substrates

Atomic layer deposition (ALD) is now used in semiconductor fabrication lines to deposit nanometre-thin oxide films, and has thus enabled the introduction of high-permittivity dielectrics into the CMOS gate stack. With interest increasing in transistors based on high mobility substrates, such as GaAs, we are investigating the surface treatments that may improve the interface characteristics. We focus on incubation periods of ALD processes on III-V substrates. We have applied first principles Density Functional Theory (DFT) to investigate detailed chemistry of these early stages of growth, specifically substrate and ALD precursor interaction. We have modelled the ‘clean-up’ effect by which organometallic precursors: trimethylaluminium (TMA) or hafnium and titanium amides clean arsenic oxides off the GaAs surface before ALD growth of dielectric commences and similar effect on Si3N4 substrate. Our simulations show that ‘clean-up’ of an oxide film strongly depends on precursor ligand, its affinity to the oxide and the redox character of the oxide. The predominant pathway for a metalloid oxide such as arsenic oxide is reduction, producing volatile molecules or gettering oxygen from less reducible oxides. An alternative pathway is non-redox ligand exchange, which allows non-reducible oxides (e.g. SiO2) to be cleaned-up. First principles study shows also that alkylamides are more susceptible to decomposition rather than migration on the oxide surface. This improved understanding of the chemical principles underlying ‘clean-up’ allows us to rationalize and predict which precursors will perform the reaction. The comparison is made between selection of metal chlorides, methyls and alkylamides precursors.

Atomic layer deposition of interface control layers for the fabrication of III/V MOS devices

The continued advancement of metal oxide semiconductor field effect transistor (MOSFET) technology has shifted the focus from Si/SiO2 transistors towards high-κ/III-V transistors for high performance, faster devices. This has been necessary due to the limitations associated with the scaling of the SiO2 thickness below ~1 nm and the associated increased leakage current due to direct electron tunnelling through the gate oxide. The use of these materials exhibiting lower effective charge carrier mass in conjunction with the use of a high-κ gate oxide allows for the continuation of device scaling and increases in the associated MOSFET device performance. The high-κ/III-V interface is a critical challenge to the integration of high-κ dielectrics on III-V channels. The interfacial chemistry of the high-κ/III-V system is more complex than Si, due to the nature of the multitude of potential native oxide chemistries at the surface with the resultant interfacial layer showing poor electrical insulating properties when high-κ dielectrics are deposited directly on these oxides. It is necessary to ensure that a good quality interface is formed in order to reduce leakage and interface state defect density to maximise channel mobility and reduce variability and power dissipation. In this work, the ALD growth of aluminium oxide (Al2O3) and hafnium oxide (HfO2) after various surface pre-treatments was carried out, with the aim of improving the high-κ/III-V interface by reducing the Dit – the density of interface defects caused by imperfections such as dangling bonds, dimers and other unsatisfied bonds at the interfaces of materials. A brief investigation was performed into the structural and electrical properties of Al2O3 films deposited on In0.53Ga0.47As at 200 and 300oC via a novel amidinate precursor. Samples were determined to experience a severe nucleation delay when deposited directly on native oxides, leading to diminished functionality as a gate insulator due to largely reduced growth per cycle. Aluminium oxide MOS capacitors were prepared by ALD and the electrical characteristics of GaAs, In0.53Ga0.47As and InP capacitors which had been exposed to pre-pulse treatments from triethyl gallium and trimethyl indium were examined, to determine if self-cleaning reactions similar to those of trimethyl aluminium occur for other alkyl precursors. An improved C-V characteristic was observed for GaAs devices indicating an improved interface possibly indicating an improvement of the surface upon pre-pulsing with TEG, conversely degraded electrical characteristics observed for In0.53Ga0.47As and InP MOS devices after pre-treatment with triethyl gallium and trimethyl indium respectively. The electrical characteristics of Al2O3/In0.53Ga0.47As MOS capacitors after in-situ H2/Ar plasma treatment or in-situ ammonium sulphide passivation were investigated and estimates of interface Dit calculated. The use of plasma reduced the amount of interface defects as evidenced in the improved C-V characteristics. Samples treated with ammonium sulphide in the ALD chamber were found to display no significant improvement of the high-κ/III-V interface. HfO2 MOS capacitors were fabricated using two different precursors comparing the industry standard hafnium chloride process with deposition from amide precursors incorporating a ~1nm interface control layer of aluminium oxide and the structural and electrical properties investigated. Capacitors furnished from the chloride process exhibited lower hysteresis and improved C-V characteristics as compared to that of hafnium dioxide grown from an amide precursor, an indication that no etching of the film takes place using the chloride precursor in conjunction with a 1nm interlayer. Optimisation of the amide process was carried out and scaled samples electrically characterised in order to determine if reduced bilayer structures display improved electrical characteristics. Samples were determined to exhibit good electrical characteristics with a low midgap Dit indicative of an unpinned Fermi level

Thermal Properties of Alkyl-triethylammonium bis{(trifluoromethyl)sulfonyl}imide Ionic Liquids

In this work, we address the thermal properties of selected members of a
homologous series of alkyltriethylammonium bisf(trifluoromethyl)sulfonylgimide ionic
liquids. Their phase and glass transition behavior, as well as their standard isobaric heat
capacities at 298.15 K, were studied using differential scanning calorimetry (DSC),
whereas their decomposition temperature was determined by thermal gravimetry analysis.
DSC was further used to measure standard molar heat capacities of the studied ionic liquids
and standard molar heat capacity as a function of temperature for hexyltriethylammonium,
octyltriethylammonium, and dodecyltriethylammonium bisf(trifluoromethyl)sulfonylgimide
ionic liquids. Based on the data obtained, we discuss the influence of the alkyl chain
length of the cation on the studied ionic liquids on the measured properties. Using viscosity
data obtained in a previous work, the liquid fragility of the ionic liquids is then discussed.
Viscosity data were correlated by the VTF equation using a robust regression along a
gnostic influence function. In this way, more reliable VTF model parameters were obtained than in our previous work and a good estimate of the liquid fragility of the ionic liquids was made.

Organometallic Hydroxides of Transition Elements

Northern Illinois University DeKalb,Institut fu¨r Anorganische Chemie & Southern Methodist University

Steric sea level variability (1993-2010) in an ensemble of ocean reanalyses and objective analyses

Quantifying the effect of the seawater density changes on sea level variability is of crucial importance for climate change studies, as the sea level cumulative rise can be regarded as both an important climate change indicator and a possible danger for human activities in coastal areas. In this work, as part of the Ocean Reanalysis Intercomparison Project, the global and regional steric sea level changes are estimated and compared from an ensemble of 16 ocean reanalyses and 4 objective analyses. These estimates are initially compared with a satellite-derived (altimetry minus gravimetry) dataset for a short period (2003–2010). The ensemble mean exhibits a significant high correlation at both global and regional scale, and the ensemble of ocean reanalyses outperforms that of objective analyses, in particular in the Southern Ocean. The reanalysis ensemble mean thus represents a valuable tool for further analyses, although large uncertainties remain for the inter-annual trends. Within the extended intercomparison period that spans the altimetry era (1993–2010), we find that the ensemble of reanalyses and objective analyses are in good agreement, and both detect a trend of the global steric sea level of 1.0 and 1.1 ± 0.05 mm/year, respectively. However, the spread among the products of the halosteric component trend exceeds the mean trend itself, questioning the reliability of its estimate. This is related to the scarcity of salinity observations before the Argo era. Furthermore, the impact of deep ocean layers is non-negligible on the steric sea level variability (22 and 12 % for the layers below 700 and 1500 m of depth, respectively), although the small deep ocean trends are not significant with respect to the products spread.

Estudo comparativo da constituição nutricional da madeira e casca de espécies e clones de Eucalipto visando o cultivo de Shiitake em toras

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desenvolvimento de uma metodologia para caracterização de amostras de sedimento: Rio Jundiaí RN

The study of sediment in water bodies presents great environmental importance, because of its ability to adsorb the pollutants, they may facilitate the understanding of the history of the current quality of the water system. Depending on how it is done the collection, analysis can show both a recent contamination as old. The detailed characterization of the sediment may reveal details that can understand how each type of pollutant interacts with the material given its composition. In this work it has developed a systematic methodology to characterize samples of sediment, with the aim to understand how a series of metal is distributed in different size fractions of the sediment. This study was conducted in five samples of sediment (P1, P2, P3a, P3B and P3c) collected in Jundiaí river, one of the most important tributaries of the river Potengi in the region of Macaíba, RN. The characterization was made with the samples previously sieved into meshes with different granulometries (+8#, -8+16#, -16+65# - 65+100#,-100+200#,-200+250# and -250#), using the following techniques: Analysis of specific surface area by BET method, determining the levels of organic matter (OM%) and humidity through the gravimetry and Analysis Thermogravimetric (TG), Infrared Spectroscopy in a Fourier transform (FTIR ), Analysis of X ray diffraction (XRD), analysis of heavy metals by optical emission spectrometry with the Argon Plasma (ICP-OES). The analyzed elements were Al, Cd, Cr, Cu, Fe, Mn, Ni, Zn and P. In addition to the techniques of characterization above, was also made the rebuilding of the samples P1, P2 and P3B in relation to the levels of organic matter and concentration of heavy metals. Then, the results of the recomposed samples were compared with those obtained in crude samples, showing great consistency. The gravimetry, used in determining the levels of organic matter, was not considered an appropriate method because the clay minerals present in the sediment samples analyzed fall apart in the same range of temperature (550-600 0C) used in roasting (600 0C). The results also showed the trend of organic matter and heavy metals to focus on the thin fractions, although the largest concentrations of metals are in intermediate fractions