3D thermo-electro-mechanical simulations of gas sensors based on SOI membranes

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2-based multilayer membrane has been performed to ensure a high degree of mechanical reliability at a high operating temperature (e.g. up to 400°C). Moreover, optimisation of the layout dimensions of the SOI membrane, in particular the aspect ratio between the membrane length and membrane thickness, has been carried out to find the best trade-off between minimal device power consumption and acceptable mechanical stress.

Design and simulations of SOI CMOS micro-hotplate gas sensors

This paper describes a new generation of integrated solid-state gas-sensors embedded in SOI micro-hotplates. The micro-hotplates lie on a SOI membrane and consist of MOSFET heaters that elevate the operating temperature, through self-heating, of a gas sensitive material. These sensors are fully compatible with SOI CMOS or BiCMOS technologies, offer ultra-low power consumption (under 100 mW), high sensitivity, low noise, low unit cost, reproducibility and reliability through the use of on-chip integration. In addition, the new integrated sensors offer a nearly uniform temperature distribution over the active area at its operating temperatures at up to about 300-350°C. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors. This paper reports on the design of a chemo-resistive gas sensor and proposes for the first time an intelligent SOI membrane microcalorimeter using active micro-FET heaters and temperature sensors. A comprehensive set of numerical and analogue simulations is also presented including complex 2D and 3D electro-thermal numerical analyses. © 2001 Elsevier Science B.V. All rights reserved.

Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

Study of thin-film SO2 gas sensors by photometric and ellipsometric methods

Pt-, Pd-, and Zr-doped SnO2 thin films and dopant-free VOx films were fabricated by planar magnetron sputtering. Tests for sensitivity to SO2 for all samples were conducted at 180 degreesC, and the sensitivities were investigated ex situ with photometric and ellipsometric methods at room temperature. It was found that the optical sensitivities as well as the sensitive wavelength region for SnO2 films could be tuned by doping. The Pd-doped SnO2 films had good sensitivity in the visible range, and the Zr-doped in the near IR. The dominant sensitive wavelength region for VOx films fell into the visible range, and the ratio of the sensitivity in the visible to that in the near IR increased with O-2/Ar in the depositing atmosphere. (C) 2001 society of Photo-Optical instrumentation Engineers .

Thermal characterization of SOI CMOS micro hot-plate gas sensors

This work reports on thermal characterization of SOI (silicon on insulator) CMOS (complementary metal oxide semiconductor) MEMS (micro electro mechanical system) gas sensors using a thermoreflectance (TR) thermography system. The sensors were fabricated in a CMOS foundry and the micro hot-plate structures were created by back-etching the CMOS processed wafers in a MEMS foundry using DRIE (deep reactive ion etch) process. The calibration and experimental details of the thermoreflectance based thermal imaging setup, used for these micro hot-plate gas sensor structures, are presented. Experimentally determined temperature of a micro hot-plate sensor, using TR thermography and built-in silicon resistive temperature sensor, is compared with that estimated using numerical simulations. The results confirm that TR based thermal imaging technique can be used to determine surface temperature of CMOS MEMS devices with a high accuracy. © 2010 EDA Publishing/THERMINIC.

High temperature robust SOI ethanol sensor

In this paper we present a robust SOI-CMOS ethanol sensor based on a tungsten-doped lanthanum iron oxide sensing material. The device shows response to gas, has low power consumption, good uniformity, high temperature stability and can be manufactured at low cost and with integrated circuitry. The platform is a tungsten-based CMOS micro-hotplate that has been shown to be stable for over two thousand hours at a high temperature (600°C) in a form of accelerated life test. The tungsten-doped lanthanum iron oxide was deposited on the micro-hotplate as a slurry with terpineol using a syringe, dried and annealed. Preliminary gas testing was done and the material shows response to ethanol vapour. These results are promising and we believe that this combination of a robust CMOS micro-hotplate and a good sensing material can form the basis for a commercial CMOS gas sensor. © 2011 Published by Elsevier Ltd.

Electrochemical chlorine sensor with multi-walled carbon nanotubes as electrocatalysts

It has been reported for the first time that an electrochemical gas sensor mdified with multi-walled carbon nanotubes (MWNTs) film as elctrocatalyst was fabricated for the determination of chlorine (Cl-2).Here, MWNTs and graphite were compared with each other in terms of their electrochemical properties using cyclic voltammetry. Cl-2 gas was allowed through the cathode surface of the sensor and the resulting galvanic effects were monitored. Results indicated that both of the MWNTs and graphite have the electrocatalytic activity for the reduction of Cl-2 while the MWNTs-modified electrode exhibited a higher accessible surface area in electrochemical reactions, excellent sensitivity, stable response, reproducibility and recovery for the determination of Cl-2.

Electrochemical H2S sensor with H2SO4 pre-treated Nafion membrane as solid polymer electrolyte

It is reported for the first time that the performance of the electrochemical H2S sensor with the Nation membrane pre-treated with the concentrated H2SO4 as the solid electrolyte is much more stable than that for the sensor with the Nation membrane without H2SO4 pretreatment. The sensitivity of the sensor is about 2.92 muA/ppm. The response time of the sensor is about 9 s. The detection limit is about 0.1 ppm. Therefore, this kind of the electrochemical H2S gas sensor may be desirable for the practical application.

Characterization of neodymium bisphthalocyanine Langmuir-Blodgett films for gas-sensibility

The deposition of Langmuir-Blodgett film of neodymium bisphthalocyanine derivatives is reported for the first time. Optical absorption data reveal that these films call be deposited in a reproducible manner; results are also presented showing the extreme sensitivity and selectivity of their electrical conductivity to NH3 in room temperature. The Nd bisphthalocyanine LB film is a sensitive, reproducible. rapid and stable gas sensor. Neodymium bisphthalocyanine derivatives will be candidates for thin film gas-sensitive materials. (C) 1998 Elsevier Science S.A. All rights reserved.

Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases

One of the main challenges in the development of metal-oxide gas sensors is enhancement of selectivity to a particular gas. Currently, two general approaches exist for enhancing the selective properties of sensors. The first one is aimed at preparing a material that is specifically sensitive to one compound and has low or zero cross-sensitivity to other compounds that may be present in the working atmosphere. To do this, the optimal temperature, doping elements, and their concentrations are investigated. Nonetheless, it is usually very difficult to achieve an absolutely selective metal oxide gas sensor in practice. Another approach is based on the preparation of materials for discrimination between several analyte in a mixture. It is impossible to do this by using one sensor signal. Therefore, it is usually done either by modulation of sensor temperature or by using sensor arrays. The present work focus on the characterization of n-type semiconducting metal oxides like Tungsten oxide (WO3), Zinc Oxide (ZnO) and Indium oxide (In2O3) for the gas sensing purpose. For the purpose of gas sensing thick as well as thin films were fabricated. Two different gases, NO2 and H2S gases were selected in order to study the gas sensing behaviour of these metal oxides. To study the problem associated with selectivity the metal oxides were doped with metals and the gas sensing characteristics were investigated. The present thesis is entitled “Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases” and consists of six chapters.

Chemical gas sensors based on functionalized self-actuated piezo-resistive cantilevers

Der Schwerpunkt dieser Arbeit liegt in der Anwendung funktionalisierter Mikrocantilever mit integrierter bimorpher Aktuation und piezo-resistiver Detektion als chemische Gassensoren für den schnellen, tragbaren und preisgünstigen Nachweis verschiedener flüchtiger Substanzen. Besondere Beachtung erfährt die Verbesserung der Cantilever-Arbeitsleistung durch den Betrieb in speziellen Modi. Weiterer Schwerpunkt liegt in der Untersuchung von spezifischen Sorptionswechselwirkungen und Anwendung von innovativen Funktionsschichten, die bedeutend auf die Sensorselektivität wirken.

Raman spectroscopy of a sulfur dioxide visual sensor: The origin of the two colors in the solid sample

The vibrational spectroscopic characterization of a sulfur dioxide visual sensor was carried out using a Raman microscope system. It was observed the formation of two distinct complexes, that were characterized by the position and relative intensities of the bands assigned to the symmetric stretching, nu(s)(SO(2)),of the linked SO(2) molecules. In fact, in the yellowish orange complex, that corresponds to the 1:1 stoichiometry, only one band is observed, assigned to nu(s)(SO(2)) at ca. 1080 cm-(1) and, in the deep red complex, that corresponds to the 1:2 complex, at ca. 1070 and 1090 cm(-)1 are observed. The variation of the relative intensities of the bands assigned to nu(s)(SO(2)) present in the Ni(II)center dot SO(2) complex, in different points of the sample, shows clearly the requirement of the Raman microscope in the vibrational characterization of this kind of molecular sensor. (C) 2008 Elsevier B.V. All rights reserved.

Bioluminescent sensor for naphthalene in air: Cell immobilization and evaluation with a dynamic standard atmosphere generator

A dynamic atmosphere generator with a naphthalene emission source has been constructed and used for the development and evaluation of a bioluminescence sensor based on the bacteria Pseudomonas fluorescens HK44 immobilized in 2% agar gel (101 cell mL(-1)) placed in sampling tubes. A steady naphthalene emission rate (around 7.3 nmol min(-1) at 27 degrees C and 7.4 mLmin(-1) of purified air) was obtained by covering the diffusion unit containing solid naphthalene with a PTFE filter membrane. The time elapsed from gelation of the agar matrix to analyte exposure (""maturation time"") was found relevant for the bioluminescence assays, being most favorable between 1.5 and 3 h. The maximum light emission, observed after 80 min, is dependent on the analyte concentration and the exposure time (evaluated between 5 and 20 min), but not on the flow rate of naphthalene in the sampling tube, over the range of 1.8-7.4 nmol min(-1). A good linear response was obtained between 50 and 260 nmol L-1 with a limit of detection estimated in 20 nmol L-1 far below the recommended threshold limit value for naphthalene in air. (c) 2008 Elsevier B.V. All rights reserved.

Impedance spectroscopy analysis of TiO(2) thin film gas sensors obtained from water-based anatase colloids

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The role of hierarchical morphologies in the superior gas sensing performance of CuO-based chemiresistors

The development of gas sensors with innovative designs and advanced functional materials has attracted considerable scientific interest given their potential for addressing important technological challenges. This work presents new insight towards the development of high-performance p-type semiconductor gas sensors. Gas sensor test devices, based on copper (II) oxide (CuO) with innovative and unique designs (urchin-like, fiber-like, and nanorods), are prepared by a microwave-assisted synthesis method. The crystalline composition, surface area, porosity, and morphological characteristics are studied by X-ray powder diffraction, nitrogen adsorption isotherms, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. Gas sensor measurements, performed simultaneously on multiple samples, show that morphology can have a substantial influence on gas sensor performance. An assembly of urchin-like structures is found to be most effective for hydrogen detection in the range of parts-per-million at 200 °C with 300-fold larger response than the previously best reported values for semiconducting CuO hydrogen gas sensors. These results show that morphology plays an important role in the gas sensing performance of CuO and can be effectively applied in the further development of gas sensors based on p-type semiconductors. High-performance gas sensors based on CuO hierarchical morphologies with in situ gas sensor comparison are reported. Urchin-like morphologies with high hydrogen sensitivity and selectivity that show chemical and thermal stability and low temperature operation are analyzed. The role of morphological influences in p-type gas sensor materials is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.