Magnetic susceptibility studies of lead oxyhalide glasses containing transition metal oxides

Magnetic susceptibility studies of lead oxyhalide glasses containing high concentrations of transition metal oxides such as MnO and Fe2O3 have been performed. While they exhibit predominantly antiferromagnetic interactions, the low temperature (<100K) region is dominated by paramagnetic contributions. The behaviour in these glasses is found to be similar to that of covalent oxide glasses and is different from that of purely ionic sulphate glasses.

Infrared and Mössbauer spectroscopic study of the metal-insulator transition in some oxides of perovskite structure

The IR spectra of some LaNi1−xBxO3 (B = Cr, Fe, and Co) compounds having perovskite structure have been studied in the range 1000−300 cm−1. An investigation of the changes in the metal-oxygen stretching frequency as x → xc from the insulating side has been carried out. An important feature is that as x → xc the vibrational features in the infrared spectra disappear when the resistivity is not, vert, similar10−1 Ω cm which is of two orders of magnitude more than the value of varrho0 at which the temperature coefficient of resistance changes sign. Mössbauer studies on Fe-containing samples with various conductivities show that the isomer shift decreases as conductivity increases which is indicative of larger Fe---O overlap.

Reinvestigation of the antifungal activities of some aromatic N-oxides

Dinitroquinoline-N-oxide, 4-nitroquinoline N-oxide and a series of 4-substituted pyridine N-oxides have been subjected toMINDO/3 treatment in order to understand their antifungal activities. The photoelectron spectra and the nature of the N-oxide bond are discussed.

Crystal Structure, Ultraviolet Spectrum, and Electronic Structure of a Strongly Twisted Push-Pull Ethylene, approaching an Amidinium-Vinylogous Dithioate Zwitterion

The crystal structure of 1,3-di benzyl -2 - (4,4-dimet hyl- 2,5- bist hioxocyclo hexylidene) imidazolidine (2) shows a twist of 80.8(5)' about the inter-ring bond, which has a length of 1.482(6) A. The near orthogonality of the donor and acceptor parts of this formal push-pull ethylene makes the structure approach that of a zwitterion, as evidenced by bond lengths indicating strong electron delocalization. The acceptor part approaches a vinylogous dithioate structure, the donor part an amidinium system. The U.V. spectrum shows an n + R and a R + R transition, at 51 1 and 41 7.5 nm, respectively; according to CNDO/S calculations these are located entirely in the [S-C-C-C-SI- part. Two bands at shorter wavelength are ascribed to transitions from combinations of the lone-pair orbitals on the sulphur atoms to a n* orbital in the [N-C-N] + part; this is facilitated by the near perpendicularity of the two parts of the molecule.

Infrared spectra of some oxides of K2NiF4 and related structures

The i.r. spectra of some Ln2BO4 and LnSrBO4 compounds (Ln = La, Pr, Nd, Sm or Gd;B = Fe, Al, Co or Cu) with K2NiF4 or related structures have been studied in the range 800-300 cm−1. The BO6 octahedra in compounds with K2NiF4 structure are elongated. The assignment of the bands in terms of internal modes of sheets of bridged BO6 octahedra or square-planar BO4 sheets has been considered. The observed spectra are correlated with those of solid solutions of these oxides and of LnBO3 perovskites. Unusually high stretching frequencies found in some of the oxides are discussed in terms of the short B---O bonds in the basal plane and the Ln---O bonds along the c axis.

Infrared spectra of some oxides of K2NiF4 and related structures

The i.r. spectra of some Ln2BO4 and LnSrBO4 compounds (Ln = La, Pr, Nd, Sm or Gd;B = Fe, Al, Co or Cu) with K2NiF4 or related structures have been studied in the range 800-300 cm−1. The BO6 octahedra in compounds with K2NiF4 structure are elongated. The assignment of the bands in terms of internal modes of sheets of bridged BO6 octahedra or square-planar BO4 sheets has been considered. The observed spectra are correlated with those of solid solutions of these oxides and of LnBO3 perovskites. Unusually high stretching frequencies found in some of the oxides are discussed in terms of the short B---O bonds in the basal plane and the Ln---O bonds along the c axis.

New A2+Mo4+O3 oxides with defect spinel structure

New A2+Mo4+O3 oxides for A = Mn, Co and Zn crystallizing in a defect spinel structure have been prepared by hydrogen-reduction of the corresponding AMoO4 oxides. X-ray powder diffraction intensity analysis of the zinc compound indicates that the cation distribution is (Zn)t[Zn1/3Mo4/3□1/3]oO4. The defect spinels are metastable decomposing to a mixture of A2Mo3O8 and AO at high temperatures. Electrical and magnetic properties of the spinel phases are reported.

Boronia heterophylla vase life is influenced more by ethylene than by bacterial numbers or vase solution pH

Bacterial proliferation in both vase solutions and in cut flower stems has been implicated in reducing the vase life of numerous genera. Boronia heterophylla F. Muell. (Red Boronia) vase life was assessed at two stages of floral maturity for nine vase solution treatments covering a pH range of 2.5-5.7. Vase life for advanced harvest maturity stems ranged from 4.2 d in 10 mM citric acid + 50 mg L-1 chlorine (pH 2.5) to 12.9 d after STS pulsing (pH 5.7). For normal harvest maturity stems, the corresponding range was 5.8-19.0 d, respectively. Vase solutions containing 50 mg L-1 chlorine biocide resulted in decreased longevity. In contrast, pulsing with the ethylene-binding inhibitor, STS, significantly increased vase life. The number of bacteria in the vase solutions after 11 d was determined in stems of advanced maturity. The solution with the greatest number of bacteria, 4.0 x 10(10) cfu mL(-1), was water used after STS pulsing and in which the flowers lasted longest. Vase solution bacteria were enumerated on days 0,3, 6, 9 and 12 of the vase period with stems of normal harvest maturity. There was no relationship between vase life and vase solution bacterial numbers ((R) over bar (2) = 0.000). Moreover, there was a negative relationship between numbers of bacteria in basal 0-5 cm stem segments and vase life. As no correlations were evident between longevity and either the pH or vase solution bacterial numbers, B. heterophylla vase life was evidently limited principally by ethylene action. (C) 2013 Elsevier B.V. All rights reserved.

Radical Enhanced Atomic Layer Deposition of Metals and Oxides

Atomic Layer Deposition (ALD) is a chemical, gas-phase thin film deposition method. It is known for its ability for accurate and precise thickness control, and uniform and conformal film growth. One area where ALD has not yet excelled is film deposition at low temperatures. Also deposition of metals, besides the noble metals, has proven to be quite challenging. To alleviate these limitations, more aggressive reactants are required. One such group of reactants are radicals, which may be formed by dissociating gases. Dissociation is most conveniently done with a plasma source. For example, dissociating molecular oxygen or hydrogen, oxygen or hydrogen radicals are generated. The use of radicals in ALD may surmount some of the above limitations: oxide film deposition at low temperatures may become feasible if oxygen radicals are used as they are highly reactive. Also, as hydrogen radicals are very effective reducing agents, they may be used to deposit metals. In this work, a plasma source was incorporated in an existing ALD reactor for radical generation, and the reactor was used to study five different Radical Enhanced ALD processes. The modifications to the existing reactor and the different possibilities during the modification process are discussed. The studied materials include two metals, copper and silver, and three oxides, aluminium oxide, titanium dioxide and tantalum oxide. The materials were characterized and their properties were compared to other variations of the same process, utilizing the same metal precursor, to understand what kind of effect the non-metal precursor has on the film properties and growth characteristics. Both metals were deposited successfully, and silver for the first time by ALD. The films had low resistivity and grew conformally in the ALD mode, demonstrating that the REALD of metals is true ALD. The oxide films had exceptionally high growth rates, and aluminium oxide grew at room temperature with low cycle times and resulted in good quality films. Both aluminium oxide and titanium dioxide were deposited on natural fibres without damaging the fibre. Tantalum oxide was also deposited successfully, with good electrical properties, but at slightly higher temperature than the other two oxides, due to the evaporation temperature required by the metal precursor. Overall, the ability of REALD to deposit metallic and oxide films with high quality at low temperatures was demonstrated.