Investigação da estabilidade térmica e das propriedades elétricas do TiO2 em função da dopagem com Ce(SO4)2

The metalic oxides have been studies due to differents applications as materials semiconductor in solar cells, catalysts, full cells and, resistors. Titanium dioxide (TiO2) has a high electric conductivity due to oxygen vacancies. The Ce(SO4)2.2H2O doped samples TiO2 and TiO2 pure was obtained sol-gel process, and characterized by X-ray diffractometry,thermal analysis, and impedance spectroscopy. The X-ray diffraction patterns for TiO2 pure samples shows at 700°C anatase phase is absent, and only the diffraction peaks of rutile phase are observed. However, the cerium doped samples only at 900°C rutile in the phase present with peaks of cerium dioxide (CeO2). The thermal analysis of the TiO2 pure and small concentration cerium doped samples show two steps weight loss corresponding to water of hydration and chemisorbed. To larger concentration cerium doped samples were observed two steps weight loss in the transformation of the doped cerium possible intermediate species and SO3. Finally, two steps weight loss the end products CeO2 and SO3 are formed. Analyse electric properties at different temperatures and concentration cerium doped samples have been investigated by impedance spectroscopy. It was observed that titanium, can be substituted by cerium, changing its electric properties, and increased thermal stability of TiO2 anatase structure

Aplicação da técnica de caminhamento elétrico em área contaminada por derivados de petróleo

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Monitoramento da atenuação natural de pluma de contaminação pelo método de radar de penetração no solo (GPR)

O monitoramento da atenuação natural em áreas contaminadas tem se mostrado uma técnica alternativa e de baixo custo para a remediação de áreas contaminadas. A degradação por microorganismos é um dos processos mais importantes na atenuação natural de contaminantes, especialmente compostos de fase líquida não aquosa (NAPL). em muitos casos, a ação efetiva deste processo resulta na geração de ácidos orgânicos, que sob elevadas concentrações ocasionam a dissolução de minerais presentes em subsuperfície onde se encontra a contaminação, com conseqüente liberação de íons. O aumento na quantidade de íons colabora para o aumento da condutividade elétrica do meio. O princípio físico da técnica de Radar de Penetração no Solo (GPR) é a emissão de ondas eletromagnéticas de alta freqüência. A propagação da onda eletromagnética é condicionada à freqüência de sinal emitido e as propriedades elétricas do meio. O aumento da condutividade elétrica do meio resulta na atenuação do sinal e, por conseqüência, na diminuição da profundidade de penetração da onda eletromagnética. Este fator permite o monitoramento de áreas contaminadas sob atenuação natural a partir de análises temporais com o GPR. Este trabalho apresenta um estudo comparativo entre perfis de GPR adquiridos em 1998 e 2003 em uma área contaminada por compostos de fase líquida leve não aquosa (LNAPL), sob atenuação natural. Os resultados indicam um aumento da condutividade elétrica do meio, a partir da atenuação acentuada do sinal GPR observada nas seções de 2003. Este aumento pode estar associado à liberação de íons por dissolução de minerais, pelo ataque de ácidos orgânicos resultantes do processo de biodegradação.

Síntese e caracterização da cerâmica PZT dopada com íons bário

Pós de titanato zirconato de chumbo (PZT) puros e dopados com bário foram obtidos pelo método de precursores poliméricos, conformados uniaxialmente, na forma de cilindros, utilizando 15 MPa, e prensados isostaticamente à 210MPa. Com o objetivo de estudar o comportamento de sinterização os compactos foram divididos em dois lotes. Sendo um sinterizado em um forno acoplado a um dilatômetro até a temperatura de 1300 °C e o outro sinterizado em forno tipo mufla, em sistema fechado, na temperatura de 1100 °C por 4 horas. Verificou-se que a adição do íon bário influencia na cinética de sinterização, na densificação final, na microestrutura e nas propriedades elétricas da cerâmica. A adição de bário aumenta a concentração da fase tetragonal no PZT, em função da substituição do chumbo por bário na rede perovskita. As amostras dopadas com concentrações maiores que 5,0 mol % em bário apresentaram segregação de PbO no contorno de grão, inibindo seu crescimento.

ac conductivity and conduction mechanism of NaNbO3 semiconductor antiferroelectric ceramic: A relaxational approach at high temperature

The electric properties of the sodium niobate perovskite ceramic were investigated by impedance spectroscopy in the frequency range from 5 Hz to 13 MHz and from room temperature up to 1073 K, in a thermal cycle. Both capacitance and conductivity exhibit an anomaly at around 600 K as a function of the temperature and frequency. The electric conductivity as a function of angular frequency sigma(omega) follows the relation sigma(omega)=Aomega(s). The values of the exponent s lie in the range 0.15less than or equal tosless than or equal to0.44. These results were discussed considering the conduction mechanism as being a type of polaron hopping. (C) 2003 American Institute of Physics.

Influence of the rare-earths oxides doped on the SnO2CoOMnO2Ta2O5 varistor system

The tin dioxide is an n-type semiconductor, which exhibits varistor behavior with high capacity of absorption of energy, whose function is to restrict transitory over-voltages without being destroyed, when it is doped with some oxides. Varistors are used in alternated current fields as well as in continuous current, and it can be applied in great interval of voltages or in great interval of currents. The electric properties of the varistor depend on the defects that happen at the grain boundaries and the adsorption of oxygen. The (98.90-x)%SnO2.0.25%CoO+0.75%MnO2+0.05%Ta2O5+0.05%Tr2O3 systems, in which Tr=La or Nd. Current-voltage measurements were accomplished for determination of the non-linear coefficient were studied. SEM microstructure analysis was made to evaluate the microstructural characteristics of the systems. The results showed that the rare-earth oxides have influenced the electrical behavior presented by the system. (C) 2002 Kluwer Academic Publishers.

Barium strontium titanate nanocrystalline thin films prepared by soft chemical method

Barium strontium titanate (Ba0.65Sr0.35TiO3) nanocrystalline thin films, which were produced by the soft chemical method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films obtained are crack-free, well-adhered, and fully crystallized. The microstructure displayed a polycrystalline nature with nanograin size. The metal-BST-metal structure of the thin films treated at 700 degrees C show food electric properties. The ferroelectric nature of the BST35 thin film was indicated by buttertly- shaped C-V curves. The capacitance-frequency curves reveal that the dielectric constant may reach a value up to 800 at 100kHz. The dissipation factor was 0.01 at 100kHz. The charge storage density as function of applied voltage graph showed that the charge storage densities are suitable for use in trench type 64 Mb ( 1-5 mu C/cm(2) and 265 Mb (2-11 mu C/cm(2)) DRAMs. (C) 2007 Elsevier Ltd. All rights reserved.

Impedance spectroscopy study of dehydrated chitosan and chitosan containing LiClO4

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

On the equivalence of the mechanisms governing switching and hysteresis phenomena

The nucleation and growth model, which is usually applied to switching phenomena, is adapted for explaining surface potential measurements on the P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) copolymer obtained in a constant current corona triode. It is shown that the growth is one-dimensional and that the nucleation rate is unimportant, probably because surface potential measurements take much longer than the switching ones. The surface potential data can therefore be accounted for by a growth model in which the velocity of growth varies exponentially with the electric field. Since hysteresis loops can be obtained from surface potential measurements, it is suggested that similar mechanisms can be used when treating switching and hysteresis phenomena, provided that account is taken of the difference in the time scale of the measurements.

Asymmetrical magnetization in three-phase core type transformers

The performance of the three-phase core type transformers, under AC/DC double excitation is discussed in this work. It is presented a mathematical model that considers the mutual coupling between phases and the magnetic nonlinearity. The validity of the proposed model is verified by means of the experimental and simulated results.

Electrical and optical characteristics of SnO2 thin films prepared by dip coating from aqueous colloidal suspensions

Starting from aqueous colloidal suspensions, undoped and Nb5+ doped SnO2 thin films have been prepared by using the dip-coating sol gel process. X-ray diffraction results show that films are polycrystalline with crystallites of average size1-4nm. Decreasing the thickness of the films and increasing the Nb5+ concentration limits the crystallite size growth during firing. Complex impedance measurements reveal capacitive and resistive effects between adjacent crystallites or grains, characteristic of electrical potential barriers. The transfer of charge throughout these barriers determines the macroscopic electrical resistance of the layer. The analysis of the optical absorption spectra shows that the samples present more than 80% of their transmittance in the visible region and the value of the band gap energy increases with decreasing crystallite size. © 1997 Chapman & Hall.

Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources

Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source. We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

Electrical behavior of PU/POMA blends

The incorporation of conducting polymer into a conventional polymer matrix has received attention because of the possibility of combining the good processability and mechanical performance of the conventional polymer with the electrical and optical properties of conducting polymer. In this work, flexible films of polyurethane (PU) and Poli(o-metoxyaniline)(POMA) blends were obtained by casting and investigated using thermally stimulated depolarisation current (TSDC) measurements. Two relaxation peaks were found in the range of-20°C to 90°C. The first one at T=24°C was attributed as α relaxation associated to the glass transition of PU/POMA blend and the second one located at T=60°C can be attributed to space charge.

Degradación y recuperación de varistores de ZnO

In the present work it was studied the main aspect that influences on degradation and physical-chemical properties at grain-boundary region of metal oxide varistors and its consequences on microstructure and nonohmic electric properties. Based on the comprehension of the degradation aspects it was proposed some methodologies to recover the varistors nonohmic properties after being failed with long (2000 μs) and short current pulses (8/20 μs). Our analysis shown that one of the cause of degradation process is related to the lowering of oxygen species amount at grain-boundary region. Therefore, it is possible to re-promote oxygen enrichment of such regions by specific thermal treatments in rich oxygen atmospheres (the best condition found in the present work was temperatures around 900°C for 2 h at an oxygen flux of 15 1/h). The proposed nonohmic properties recovering procedure appear to be valid for all kind metal oxide varistors studied and is very important from technological point of view.